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    • 1. 发明授权
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US06921924B2
    • 2005-07-26
    • US10463393
    • 2003-06-18
    • Tzong-Liang TsaiChih-Sung ChangTzer-Perng Chen
    • Tzong-Liang TsaiChih-Sung ChangTzer-Perng Chen
    • H01L33/22H01L33/24H01L33/38H01L33/00
    • H01L33/24H01L33/22
    • A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
    • 一种半导体发光器件的制造方法。 半导体发光器件具有在衬底上依次形成的衬底和半导体层,n型半导体层和p型半导体层。 该方法在衬底和半导体层之间,或者在半导体层和n型半导体层之间或在n型半导体层和p型半导体层之间形成具有预定图案的中间层。 由于具有预定图案的中间层,p型半导体层具有不均匀的顶层,并且可以减少LED的全内反射。 中间层是降低LED串联电阻的导电材料。