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1. 发明授权

US08362505B2 Optical device and the forming method thereof 有权
标题翻译：光学装置及其形成方法
公开(公告)号：US08362505B2
公开(公告)日：2013-01-29
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a multi-layer structure disposed on the substrate, and the multi-layer structure consisted of a plurality of insulating layers with different refractive indices formed alternately; a first conductive semiconductor layer disposed on the substrate to cover the multi-layer structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a transparent conductive layer disposed on the second conductive semiconductor layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting-efficiency.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在所述基板上的多层结构，所述多层结构由交替形成的具有不同折射率的多个绝缘层构成; 设置在所述基板上以覆盖所述多层结构的第一导电半导体层; 设置在所述第一导电半导体层上的有源层; 设置在所述有源层上的第二导电半导体层; 设置在所述第二导电半导体层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

2. 发明申请

US20100193810A1 Optical Device and the Forming Method Thereof 有权
标题翻译：光学器件及其形成方法
公开(公告)号：US20100193810A1
公开(公告)日：2010-08-05
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang TSAI , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang TSAI , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a plurality of multi-layer film structures disposed on the substrate, and the multi-layer film structure consisted of at least two insulated layer with different reflection index formed alternately; a first semiconductor conductive layer disposed on the substrate to cover the multi-layer film structure; an active layer disposed on the first semiconductor conductive layer; a second semiconductor conductive layer disposed on the active layer; a transparent conductive layer disposed on the second semiconductor conductive layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting effective.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在基板上的多个多层膜结构，并且所述多层膜结构由交替形成的具有不同反射指数的至少两个绝缘层组成; 设置在所述基板上以覆盖所述多层膜结构的第一半导体导电层; 设置在所述第一半导体导电层上的有源层; 设置在所述有源层上的第二半导体导电层; 设置在所述第二半导体导电层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

3. 发明授权

US07999273B2 Light emitting device having pillar structure with roughness surface and the forming method thereof 有权
标题翻译：具有粗糙表面的柱结构的发光装置及其形成方法
公开(公告)号：US07999273B2
公开(公告)日：2011-08-16
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang Tsai , Lin-Chieh Kao
发明人： Tzong-Liang Tsai , Lin-Chieh Kao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

4. 发明申请

US20100193812A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20100193812A1
公开(公告)日：2010-08-05
申请号：US12418105
申请日：2009-04-03
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/44
摘要： The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a second transparent conducting layer. The first conducting-type semiconductor layer is formed on the substrate, and the top surface of the first conducting-type semiconductor layer comprises a first region and a second region surrounded by the first region. The pillars are formed on the first region. The transparent insulating material is filled in the gaps between the pillars to be as high as the pillars. The illuminating layer is formed on the second region, and the second conducting-type semiconductor layer is formed on the illuminating layer. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on a top surface of the pillars and the transparent insulating material.
摘要翻译：本发明公开了一种发光二极管，其包括基板，第一导电型半导体层，多个柱，透明绝缘材料，照明层，第二导电型半导体层，第一透明导电层和第二透明导电层导电层。第一导电型半导体层形成在基板上，第一导电型半导体层的顶表面包括由第一区域包围的第一区域和第二区域。柱子形成在第一区域上。透明绝缘材料填充在支柱之间的间隙中，与支柱一样高。照明层形成在第二区域上，第二导电型半导体层形成在照明层上。第一透明导电层形成在第二导电型半导体层上，第二透明导电层形成在柱的顶表面和透明绝缘材料上。

5. 发明申请

US20100193811A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20100193811A1
公开(公告)日：2010-08-05
申请号：US12418079
申请日：2009-04-03
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/382 , H01L33/44
摘要： The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and surrounding the main stack structure. The main stack structure and each of the pillars has a first conducting-type semiconductor layer, a luminescing layer, and a second conducting-type semiconductor layer formed on the substrate in sequence. The transparent insulating material fills the gaps between the pillars and is as high as the pillars. The transparent conducting layer is coated on the main stack, the pillars and the transparent insulating material. The first electrode is formed on the transparent conducting layer and second electrode is formed on the first conducting-type semiconductor layer.
摘要翻译：本发明公开了一种发光二极管，包括基板，主叠层结构，多个次柱，透明绝缘材料，透明导电层，第一电极和第二电极。支柱形成在基板上并围绕主堆叠结构。主堆叠结构和每个支柱具有依次形成在基板上的第一导电型半导体层，发光层和第二导电型半导体层。透明绝缘材料填充柱之间的间隙，并且与支柱一样高。透明导电层涂覆在主叠层，支柱和透明绝缘材料上。第一电极形成在透明导电层上，第二电极形成在第一导电型半导体层上。

6. 发明授权

US07834368B2 Light-emitting diode having additional stack structure 有权
标题翻译：具有附加堆叠结构的发光二极管
公开(公告)号：US07834368B2
公开(公告)日：2010-11-16
申请号：US12426407
申请日：2009-04-20
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L29/22 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L29/18
CPC分类号： H01L33/20 , H01L33/42 , H01L33/44 , H01L2933/0083
摘要： A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor layer, and illuminating layer, and a second conducting-type semiconductor layer sequentially formed on the substrate, wherein plural pillar-like holes are formed at the top surface of the second conducting-type semiconductor layer of the secondary stack structure and protrude into the first conducting-type semiconductor layer of the secondary stack structure. The transparent insulating material is filled into the holes. The transparent conducting layer is coated on the primary stack structure, the transparent insulating material, and the tope surface of the second conducting-type semiconductor layer of the secondary stack structure.
摘要翻译：在一个实施例中，发光二极管包括基板，初级堆叠结构，二次堆叠结构，透明绝缘材料和透明导电层。初级和次级堆叠结构中的每一个具有第一导电型半导体层和照明层，以及顺序地形成在基板上的第二导电型半导体层，其中在顶部表面形成有多个柱状孔第二导电型半导体层，并且突出到二次堆叠结构的第一导电型半导体层中。透明绝缘材料填充到孔中。透明导电层涂覆在二次堆叠结构的初级堆叠结构，透明绝缘材料和第二导电型半导体层的顶表面上。

7. 发明授权

US08174039B2 Light-emitting diode device with high luminescent efficiency 有权
标题翻译：发光二极管器件发光效率高
公开(公告)号：US08174039B2
公开(公告)日：2012-05-08
申请号：US12418079
申请日：2009-04-03
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/382 , H01L33/44
摘要： The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and surrounding the main stack structure. The main stack structure and each of the pillars has a first conducting-type semiconductor layer, a luminescing layer, and a second conducting-type semiconductor layer formed on the substrate in sequence. The transparent insulating material fills the gaps between the pillars and is as high as the pillars. The transparent conducting layer is coated on the main stack, the pillars and the transparent insulating material. The first electrode is formed on the transparent conducting layer and second electrode is formed on the first conducting-type semiconductor layer.
摘要翻译：本发明公开了一种发光二极管，包括基板，主叠层结构，多个次柱，透明绝缘材料，透明导电层，第一电极和第二电极。支柱形成在基板上并围绕主堆叠结构。主堆叠结构和每个支柱具有依次形成在基板上的第一导电型半导体层，发光层和第二导电型半导体层。透明绝缘材料填充柱之间的间隙，并且与支柱一样高。透明导电层涂覆在主叠层，支柱和透明绝缘材料上。第一电极形成在透明导电层上，第二电极形成在第一导电型半导体层上。

8. 发明授权

US08129736B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08129736B2
公开(公告)日：2012-03-06
申请号：US12426542
申请日：2009-04-20
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/44
摘要： The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a second conducting-type semiconductor layer are formed sequentially, a transparent insulating material, a first transparent conducting layer, and a second transparent conducting layer. The top surface of the first conducting-type semiconductor layer includes a first region and a second region surrounded by the first region. Plural pillar-like holes are formed at the first region and protrude into the first conducting-type semiconductor layer. The transparent insulating material fills up the holes. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on the top surface of the transparent insulating material and on the first region.
摘要翻译：本发明公开了一种发光二极管，其包括基板，其上依次形成有第一导电型半导体层，照明层和第二导电型半导体层，透明绝缘材料，第一透明导电层和第二透明导电层。第一导电型半导体层的顶表面包括由第一区域包围的第一区域和第二区域。在第一区域形成多个柱状的孔，并且突出到第一导电型半导体层中。透明绝缘材料填满孔。第一透明导电层形成在第二导电型半导体层上，第二透明导电层形成在透明绝缘材料的顶表面和第一区域上。

9. 发明授权

US07928461B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07928461B2
公开(公告)日：2011-04-19
申请号：US12418105
申请日：2009-04-03
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/44
摘要： The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a second transparent conducting layer. The first conducting-type semiconductor layer is formed on the substrate, and the top surface of the first conducting-type semiconductor layer comprises a first region and a second region surrounded by the first region. The pillars are formed on the first region. The transparent insulating material is filled in the gaps between the pillars to be as high as the pillars. The illuminating layer is formed on the second region, and the second conducting-type semiconductor layer is formed on the illuminating layer. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on a top surface of the pillars and the transparent insulating material.
摘要翻译：本发明公开了一种发光二极管，其包括基板，第一导电型半导体层，多个柱，透明绝缘材料，照明层，第二导电型半导体层，第一透明导电层和第二透明导电层导电层。第一导电型半导体层形成在基板上，第一导电型半导体层的顶表面包括由第一区域包围的第一区域和第二区域。柱子形成在第一区域上。透明绝缘材料填充在支柱之间的间隙中，与支柱一样高。照明层形成在第二区域上，第二导电型半导体层形成在照明层上。第一透明导电层形成在第二导电型半导体层上，第二透明导电层形成在柱的顶表面和透明绝缘材料上。

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