专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07223688B2 Single level metal memory cell using chalcogenide cladding 有权
标题翻译：使用硫族化物包层的单层金属存储单元
公开(公告)号：US07223688B2
公开(公告)日：2007-05-29
申请号：US10389114
申请日：2003-03-14
申请人： Tyler A. Lowrey , Manzur Gill
发明人： Tyler A. Lowrey , Manzur Gill
IPC分类号： H01L21/3205
CPC分类号： H01L27/2409 , G11C13/0004 , G11C2213/72 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
摘要翻译：一种包括设置在基板上的第一导体和第二导体之间的相变材料体积的装置，以及耦合到所述体积的相变材料和所述第一导体的多个电极。一种方法，包括在衬底上的第一导体上引入耦合到所述第一导体的多个电极，在所述多个电极上引入相变材料并与所述多个电极电连通，以及将第二导体相变材料并耦合到相变材料。

2. 发明授权

US07157304B2 Single level metal memory cell using chalcogenide cladding 有权
公开(公告)号：US07157304B2
公开(公告)日：2007-01-02
申请号：US10838966
申请日：2004-05-05
申请人： Tyler A. Lowrey , Manzur Gill
发明人： Tyler A. Lowrey , Manzur Gill
IPC分类号： H01L21/00
CPC分类号： H01L27/2409 , G11C13/0004 , G11C2213/72 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

3. 发明授权

US06836423B2 Single level metal memory cell using chalcogenide cladding 失效
公开(公告)号：US06836423B2
公开(公告)日：2004-12-28
申请号：US10281337
申请日：2002-10-25
申请人： Tyler A. Lowrey , Manzur Gill
发明人： Tyler A. Lowrey , Manzur Gill
IPC分类号： G11C1700
CPC分类号： H01L27/2409 , G11C13/0004 , G11C2213/72 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

4. 发明授权

US06567293B1 Single level metal memory cell using chalcogenide cladding 有权
公开(公告)号：US06567293B1
公开(公告)日：2003-05-20
申请号：US09675285
申请日：2000-09-29
申请人： Tyler A. Lowrey , Manzur Gill
发明人： Tyler A. Lowrey , Manzur Gill
IPC分类号： G11C1700
CPC分类号： H01L27/2409 , G11C13/0004 , G11C2213/72 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

5. 发明授权

US06545907B1 Technique and apparatus for performing write operations to a phase change material memory device 有权
标题翻译：用于对相变材料存储装置执行写入操作的技术和装置
公开(公告)号：US06545907B1
公开(公告)日：2003-04-08
申请号：US10021469
申请日：2001-10-30
申请人： Tyler A. Lowrey , Ward D. Parkinson , Manzur Gill
发明人： Tyler A. Lowrey , Ward D. Parkinson , Manzur Gill
IPC分类号： G11C1100
CPC分类号： G11C13/0004 , G11C13/0069 , G11C2013/0076
摘要： A technique includes, in response to a request to write data to memory cells of a phase change memory device, placing the memory cells in a state that is shared in common among the memory cells. Also, in response to this request, the data is written to the memory cells.
摘要翻译：一种技术包括响应于将数据写入相变存储器件的存储器单元的请求，将存储器单元放置在存储器单元之间共享的状态。此外，响应于该请求，数据被写入存储单元。

6. 发明申请

US20090298224A1 Memory and Access Device and Method Therefor 有权
标题翻译：内存和访问设备及其方法
公开(公告)号：US20090298224A1
公开(公告)日：2009-12-03
申请号：US12538904
申请日：2009-08-11
申请人： Tyler A. Lowrey
发明人： Tyler A. Lowrey
IPC分类号： H01L21/06
CPC分类号： H01L27/2427 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144 , H01L45/1675
摘要： Briefly, in accordance with an embodiment of the invention, a memory and a method to manufacture the memory is provided. The memory may include a phase change material over a substrate. The memory may further include a switching material coupled to the phase change material, wherein the switching material comprises a chalcogen other than oxygen and wherein the switching material and the phase change material form portions of a vertical structure over the substrate.
摘要翻译：简而言之，根据本发明的实施例，提供了一种用于制造存储器的存储器和方法。存储器可以包括在衬底上的相变材料。存储器还可以包括耦合到相变材料的开关材料，其中开关材料包括除氧以外的硫族元素，并且其中开关材料和相变材料在衬底上形成垂直结构的部分。

7. 发明授权

US07563666B2 Semiconductor structures including vertical diode structures and methods of making the same 失效
标题翻译：包括垂直二极管结构的半导体结构及其制造方法
公开(公告)号：US07563666B2
公开(公告)日：2009-07-21
申请号：US11869012
申请日：2007-10-09
申请人： Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
发明人： Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
IPC分类号： H01L21/8234
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/2022 , H01L27/0814 , H01L27/101 , H01L27/1021 , H01L27/24 , H01L29/6609 , H01L29/66136 , H01L29/861 , H01L45/04 , H01L45/145 , Y10S257/903 , Y10S257/91 , Y10S438/979
摘要： Semiconductor structures and methods of making a vertical diode structure are provided. The vertical diode structure may have associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer may be formed over the interior surface of the diode opening and contacting the active region. The diode opening may initially be filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that may be heavily doped with a first type dopant and a bottom portion that may be lightly doped with a second type dopant. The top portion may be bounded by the bottom portion so as not to contact the titanium silicide layer. In one embodiment of the vertical diode structure, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
摘要翻译：提供了制造垂直二极管结构的半导体结构和方法。垂直二极管结构可以具有延伸穿过绝缘层并接触硅晶片上的有源区的二极管开口。硅化钛层可以形成在二极管开口的内表面上并与活性区接触。二极管开口最初可以填充非晶硅插塞，其在沉积期间被掺杂并随后重结晶以形成大晶粒多晶硅。硅插头具有可以重掺杂第一类型掺杂剂的顶部部分和可以轻掺杂第二类型掺杂剂的底部部分。顶部可以由底部限定，以便不与硅化钛层接触。在垂直二极管结构的一个实施例中，可编程电阻器接触硅插头的顶部并且金属线接触可编程电阻器。

8. 发明授权

US07547935B2 Semiconductor devices including buried digit lines that are laterally offset from corresponding active-device regions 有权
标题翻译：半导体器件包括从相应的有源器件区域横向偏移的埋置数字线
公开(公告)号：US07547935B2
公开(公告)日：2009-06-16
申请号：US10920938
申请日：2004-08-17
申请人： Tyler A. Lowrey
发明人： Tyler A. Lowrey
IPC分类号： H01L29/76 , H01L23/48
CPC分类号： H01L21/76897 , H01L21/76838 , H01L27/105 , H01L27/1052 , H01L27/10811 , H01L27/10885 , H01L27/10888
摘要： A method of electrically linking contacts of a semiconductor device to their corresponding digit lines. The method includes disposing a quantity of mask material into a trench through which the contact is exposed. The mask also abuts a connect region of a conductive element of a corresponding digit line and, therefore, protrudes somewhat over a surface of the semiconductor device. A layer of insulative material is disposed over the semiconductor device with the mask material being exposed therethrough. The mask material is then removed, leaving open cavities that include the trench and a strap region continuous with the trench and with a connect region of the corresponding digit line. Conductive material is disposed within the cavity and electrically isolated from conductive material disposed in adjacent cavities, which define conductive plugs or studs and conductive straps from the conductive material. These plugs or studs and straps provide an electrically conductive link between each contact of the semiconductor device and its corresponding digit line. Semiconductor devices that include features that have been fabricated in accordance with the method of the present invention are also within the scope of the present invention.
摘要翻译：一种将半导体器件的触点电连接到其对应的数字线的方法。该方法包括将一定量的掩模材料设置在暴露于触点的沟槽中。掩模还邻接相应数字线的导电元件的连接区域，因此在半导体器件的表面上略微突出。绝缘材料层设置在半导体器件上，掩模材料暴露在其中。然后去除掩模材料，留下包括沟槽的开放空腔和与沟槽连续的带区域以及相应数字线的连接区域。导电材料设置在空腔内并与设置在相邻空腔中的导电材料电绝缘，其从导电材料限定导电塞或螺栓和导电带。这些插头或螺柱和带在半导体器件的每个触点与其对应的数字线之间提供导电连接。包括根据本发明的方法制造的特征的半导体器件也在本发明的范围内。

9. 发明授权

US07319057B2 Phase change material memory device 有权
标题翻译：相变材料存储器件
公开(公告)号：US07319057B2
公开(公告)日：2008-01-15
申请号：US10020757
申请日：2001-10-30
申请人： Tyler A. Lowrey
发明人： Tyler A. Lowrey
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L45/124 , H01L45/1253 , H01L45/1293 , H01L45/144 , H01L45/1691
摘要： A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to subsequent processing steps or the open environment.
摘要翻译：下电极可以被保护膜覆盖，以减少下电极对后续处理步骤或开放环境的暴露。结果，可以使用可能具有作为下电极的有利特性的材料，尽管它们可能对随后的加工步骤或开放环境敏感。

10. 发明授权

US07247876B2 Three dimensional programmable device and method for fabricating the same 有权
标题翻译：三维可编程装置及其制造方法
公开(公告)号：US07247876B2
公开(公告)日：2007-07-24
申请号：US10231974
申请日：2002-08-30
申请人： Tyler A. Lowrey
发明人： Tyler A. Lowrey
IPC分类号： H01L47/00 , H01L29/06 , H01L31/00
CPC分类号： G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L29/16 , H01L29/861 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change memory cells and method for fabricating the same. The memory device includes a plurality of stacked memory cells to form a three-dimensional memory array. The polycrystalline silicon diode element selects the phase change memory cell. The memory device is fabricated by forming a plurality of phase change memory cells and diode isolation elements on a base layer. Additional layers of memory cells and isolation elements are formed over the initial layer.
摘要翻译：一种具有用于相变存储单元的多晶硅二极管隔离元件的三维存储器件及其制造方法。存储器件包括多个层叠的存储器单元以形成三维存储器阵列。多晶硅二极管元件选择相变存储单元。存储器件通过在基极层上形成多个相变存储器单元和二极管隔离元件来制造。存储单元和隔离元件的附加层在初始层上形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式