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1. 发明授权

US08933568B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08933568B2
公开(公告)日：2015-01-13
申请号：US12907468
申请日：2010-10-19
申请人： Tsuyoshi Takayama , Yukio Yasuda , Hajime Kato , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
发明人： Tsuyoshi Takayama , Yukio Yasuda , Hajime Kato , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/142 , H01L23/492 , H01L24/29 , H01L24/32 , H01L24/33 , H01L2224/29076 , H01L2224/29101 , H01L2224/2919 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.
摘要翻译：根据本发明的半导体器件包括：作为半导体元件的功率半导体元件; 用于接合半导体元件的上表面和下表面的接合部分; 以及通过所述接合部从上下接合到所述功率半导体元件的金属板，其中所述接合部包括设置在所述半导体元件和所述金属板之间的网状金属体以及嵌入所述网状金属体的接合构件。

2. 发明申请

US20110221076A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110221076A1
公开(公告)日：2011-09-15
申请号：US12907468
申请日：2010-10-19
申请人： Tsuyoshi TAKAYAMA , Yukio Yasuda , Hajime Katou , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
发明人： Tsuyoshi TAKAYAMA , Yukio Yasuda , Hajime Katou , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
IPC分类号： H01L23/48
CPC分类号： H01L23/142 , H01L23/492 , H01L24/29 , H01L24/32 , H01L24/33 , H01L2224/29076 , H01L2224/29101 , H01L2224/2919 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.
摘要翻译：根据本发明的半导体器件包括：作为半导体元件的功率半导体元件; 用于接合半导体元件的上表面和下表面的接合部分; 以及通过所述接合部从上下接合到所述功率半导体元件的金属板，其中所述接合部包括设置在所述半导体元件和所述金属板之间的网状金属体以及嵌入所述网状金属体的接合构件。

3. 发明授权

US07710187B2 Gate drive circuit 有权
标题翻译：门驱动电路
公开(公告)号：US07710187B2
公开(公告)日：2010-05-04
申请号：US12027616
申请日：2008-02-07
申请人： Kazuaki Hiyama
发明人： Kazuaki Hiyama
IPC分类号： H03K17/04
CPC分类号： H03K17/168 , H03K17/08128 , H03K17/163 , H03K17/284 , H03K17/567 , H03K17/74 , H03K2217/0036
摘要： A gate drive circuit includes a turn-on side circuit for turning on a gate of a power switching device, the turn-on side circuit including a first turn-on side power supply circuit and a second turn-on side power supply circuit, the first turn-on side power supply circuit including: a first turn-on voltage source for supplying a first turn-on voltage; first turn-on wiring; and a first turn-on switch connected in the first turn-on wiring and controlled by a gate drive signal; and the second turn-on side power supply circuit including: a second turn-on voltage source for supplying a second turn-on voltage applied to the gate of the power switching device to set the power switching device in a steady (on) state; second turn-on wiring; a second turn-on switch connected in the second turn-on wiring; and a turn-on side delay circuit for delaying the gate drive signal and passing it to the second turn-on switch.
摘要翻译：栅极驱动电路包括用于接通电源开关器件的栅极的导通侧电路，该导通侧电路包括第一接通侧电源电路和第二接通侧电源电路，第一开启侧电源电路，包括：用于提供第一导通电压的第一导通电压源; 第一次接通电线; 以及第一导通开关，其连接在所述第一导通布线中并由栅极驱动信号控制; 所述第二接通侧电源电路包括：第二导通电压源，用于提供施加到所述电力开关装置的栅极的第二接通电压，以将所述电力开关装置设定在稳定（接通）状态; 第二次接通电线; 第二导通开关连接在第二导通布线中; 以及用于延迟栅极驱动信号并将其传递到第二导通开关的导通侧延迟电路。

4. 发明授权

US06351399B2 Power converter 有权
标题翻译：电源转换器
公开(公告)号：US06351399B2
公开(公告)日：2002-02-26
申请号：US09794053
申请日：2001-02-28
申请人： Ken Takanashi , Shinji Hatae , Kazuaki Hiyama , Khalid Hassan Hussein , Fumitaka Tametani
发明人： Ken Takanashi , Shinji Hatae , Kazuaki Hiyama , Khalid Hassan Hussein , Fumitaka Tametani
IPC分类号： H02H7122
CPC分类号： H02M1/08 , H02M7/538 , H02M7/5387
摘要： To prevent malfunction or breakdown due to a surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted via a level shift circuit which is provided correspondingly to each of switching semiconductor elements forming a main circuit and shifts a level of a reference potential at its output side so as to follow variations of a reference potential of the switching semiconductor element to the switching semiconductor element, but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.
摘要翻译：为了防止由于用于将DC转换成AC等的功率转换器中的浪涌电压的故障或故障，以便向负载提供电力，不仅通过电平移位电路发送控制信号，电平移位电路相应地被提供给每个形成主电路的半导体元件的切换，并使其输出侧的基准电位的电平偏移，以使切换半导体元件的基准电位与开关用半导体元件的变化相对应，而用于供给电力的直流控制电源并且通过电感器和电阻中的至少一个将开关半导体元件的负极连接到电平移位电路。

5. 发明授权

US09461640B2 Switching element drive circuit, power module, and automobile 有权
标题翻译：开关元件驱动电路，电源模块和汽车
公开(公告)号：US09461640B2
公开(公告)日：2016-10-04
申请号：US14651627
申请日：2012-12-21
申请人： Kazuaki Hiyama
发明人： Kazuaki Hiyama
IPC分类号： H02P6/14 , H03K17/687 , H03K17/04 , H03K17/16 , H02M1/08 , H02M1/32 , H02M7/00 , H02M7/5387 , H02M1/00
CPC分类号： H03K17/687 , H02M1/08 , H02M1/32 , H02M7/003 , H02M7/5387 , H02M2001/0012 , H02P6/14 , H03K17/04 , H03K17/163 , H03K17/166
摘要： A switching element drive circuit of the present invention outputs a voltage to the switching element by use of a voltage output unit configured as an amplifier circuit having a voltage amplification factor of 1 to drive the switching element. When the switching element is turned on, a turn-on voltage having a value higher than a threshold voltage of the switching element and lower than a value of a voltage of a power supply of the switching element drive circuit is provided to the voltage output unit. After elapse of a turn-on voltage maintenance period, a voltage provided to the voltage output unit is switched by a voltage switching unit to the voltage of the power supply of the switching element drive circuit.
摘要翻译：本发明的开关元件驱动电路通过使用配置为电压放大率为1的放大电路的电压输出单元向开关元件输出电压来驱动开关元件。当开关元件导通时，具有比开关元件的阈值电压高的值低于开关元件驱动电路的电源的电压值的导通电压被提供给电压输出单元。在经过导通电压维持期后，通过电压切换单元将提供给电压输出单元的电压切换到开关元件驱动电路的电源的电压。

6. 发明授权

US08610485B2 Gate drive circuit 有权
标题翻译：门驱动电路
公开(公告)号：US08610485B2
公开(公告)日：2013-12-17
申请号：US12713634
申请日：2010-02-26
申请人： Kazuaki Hiyama
发明人： Kazuaki Hiyama
IPC分类号： H03K17/04
CPC分类号： H03K17/168 , H03K17/08128 , H03K17/163 , H03K17/284 , H03K17/567 , H03K17/74 , H03K2217/0036
摘要： A gate drive circuit includes a turn-on circuit having an upper limiter for receiving a gate drive signal. The upper limiter has an output terminal. The turn-on circuit also has a transistor having a base connected to the output terminal of the upper limiter. In addition, the terminal has a terminal connected to a gate of a power switching device. The upper limiter limits a voltage input to the base of the transistor to not exceed a first predetermined value.
摘要翻译：栅极驱动电路包括具有用于接收栅极驱动信号的上限制器的导通电路。上限限制器有一个输出端。导通电路还具有晶体管，其具有连接到上限制器的输出端子的基极。另外，终端具有连接到电力开关装置的门的端子。上限限制器将输入到晶体管基极的电压限制为不超过第一预定值。

7. 发明授权

US07602595B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07602595B2
公开(公告)日：2009-10-13
申请号：US11780052
申请日：2007-07-19
申请人： Kazuaki Hiyama
发明人： Kazuaki Hiyama
IPC分类号： H02H7/00
CPC分类号： H03K17/0828 , H03K17/14 , H03K2017/0806
摘要： A semiconductor device includes a switching element outputting from a sense terminal a sense current at a fixed rate relative to a main current flowing in the switching element; a sense resistor connected at a first end to the sense terminal and to ground at a second end; a correction current generating circuit that supplies and extracts a correction current to at the first end of the sense resistor; an overcurrent protective circuit that receives a sense voltage generated when the sense current and the correction current flow through the sense resistor, and outputs a stop signal when the sense voltage is larger than a reference voltage; and a driving circuit that stops driving the switching element when the stop signal is received from the overcurrent protective circuit.
摘要翻译：半导体器件包括从感测端子输出相对于在开关元件中流动的主电流以固定速率的感测电流的开关元件; 感测电阻器在第一端连接到感测端子并在第二端处接地; 校正电流产生电路，其在检测电阻器的第一端处提供并提取校正电流; 接收当检测电流和校正电流流过检测电阻器时产生的感测电压的过电流保护电路，当检测电压大于参考电压时，输出停止信号; 以及当从过电流保护电路接收到停止信号时停止驱动开关元件的驱动电路。

8. 发明授权

US06459598B1 Inverter device 有权
标题翻译：变频器
公开(公告)号：US06459598B1
公开(公告)日：2002-10-01
申请号：US09958270
申请日：2001-10-09
申请人： Akihisa Yamamoto , Kazuaki Hiyama , Shinji Hatae
发明人： Akihisa Yamamoto , Kazuaki Hiyama , Shinji Hatae
IPC分类号： H02M7122
CPC分类号： H02M7/53871 , H02M1/32 , H02M7/538
摘要： An inverter apparatus includes an inverter circuit for driving a load. This inverter circuit has at least a pair of switching elements connected in series in a forward direction between both polarity terminals of a dc supply for supplying power to a load. An inverter drive circuit is employed for driving each switching element of the inverter circuit and has at least one high withstand voltage IC wherein the signal level reference potential is different in the input signal and the output signal. A clamping circuit clamps the potential of the low voltage side reference terminal, to which a potential, that is a reference for operation of the high withstand voltage IC in the inverter drive circuit and is a reference for a signal on the low potential side of the high withstand voltage IC, is applied. The voltage is clamped to the high voltage reference terminal to which is applied a reference potential for the high potential-side signal in the high withstand voltage IC. The inverter apparatus also includes a voltage dividing circuit for voltage dividing a voltage between the low voltage side reference terminal of the high withstand voltage IC in the inverter drive circuit and the negative electrode of the dc supply.
摘要翻译：逆变器装置包括用于驱动负载的逆变器电路。该逆变器电路具有至少一对在用于向负载供电的直流电源的两极端子之间沿正向串联连接的开关元件。逆变器驱动电路用于驱动逆变器电路的每个开关元件，并且具有至少一个高耐压IC，其中信号电平参考电位在输入信号和输出信号中不同。钳位电路钳位作为逆变器驱动电路中的高耐压IC的操作的基准的低电压侧基准端子的电位，并且是用于在低电压侧基准端子的低电位侧的信号的基准高耐压IC。电压钳位在高电压基准端子上，在高电压基准端子上施加高耐压IC中高电位侧信号的参考电位。逆变器装置还包括分压电路，用于对逆变器驱动电路中的高耐受电压IC的低压侧基准端与直流电源的负极之间的电压进行分压。

9. 发明授权

US09013850B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09013850B2
公开(公告)日：2015-04-21
申请号：US13479853
申请日：2012-05-24
申请人： Kazuaki Hiyama
发明人： Kazuaki Hiyama
IPC分类号： H02H3/08 , H03K17/082
CPC分类号： H03K17/0828
摘要： A semiconductor device includes a sense resistor that converts a sense current flowing through a sense terminal of a switching element to a voltage (sense voltage), and an overcurrent protection circuit that performs a protection operation for the switching element when the sense voltage exceeds a threshold. The overcurrent protection circuit can switch the threshold to a first reference voltage, or to a second reference voltage which is lower than the first reference voltage. The overcurrent protection circuit sets the threshold to the second reference voltage at the time of the switching element being in a steady state, and sets the threshold to the first reference voltage during a mirror period immediately after turning-on of the switching element.
摘要翻译：半导体器件包括：检测电阻器，其将流过开关元件的感测端子的感测电流转换为电压（感测电压）;以及过电流保护电路，当感测电压超过阈值时，对开关元件执行保护操作。过电流保护电路可以将阈值切换到第一参考电压或低于第一参考电压的第二参考电压。过电流保护电路在开关元件处于稳定状态时将阈值设置为第二参考电压，并且在开关元件接通之后的镜像周期期间将阈值设置为第一参考电压。

10. 发明授权

US06891707B2 Semiconductor protection circuit 有权
标题翻译：半导体保护电路
公开(公告)号：US06891707B2
公开(公告)日：2005-05-10
申请号：US09984491
申请日：2001-10-30
申请人： Kazuaki Hiyama , Akihisa Yamamoto
发明人： Kazuaki Hiyama , Akihisa Yamamoto
IPC分类号： H02M1/00 , H03K17/04 , H03K17/08 , H03K17/082 , H02H3/08
CPC分类号： H03K17/0406 , H03K17/0828 , H03K2217/0027 , Y10T307/826 , Y10T307/832
摘要： In a semiconductor protection circuit comprising a low speed protection circuit having an overcurrent detector for detecting an overcurrent of a predetermined switching element and turning off the semiconductor switching element following detection of the overcurrent, and a high speed protection circuit turning off the semiconductor switching element based on a voltage signal proportional to an output voltage of the semiconductor switching element.
摘要翻译：在包括低速保护电路的半导体保护电路中，具有用于检测预定开关元件的过电流的过电流检测器，并且在检测到过电流之后关闭半导体开关元件，并且高速保护电路基于半导体开关元件基于在与半导体开关元件的输出电压成比例的电压信号上。

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