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1. 发明授权

US06351399B2 Power converter 有权
标题翻译：电源转换器
公开(公告)号：US06351399B2
公开(公告)日：2002-02-26
申请号：US09794053
申请日：2001-02-28
申请人： Ken Takanashi , Shinji Hatae , Kazuaki Hiyama , Khalid Hassan Hussein , Fumitaka Tametani
发明人： Ken Takanashi , Shinji Hatae , Kazuaki Hiyama , Khalid Hassan Hussein , Fumitaka Tametani
IPC分类号： H02H7122
CPC分类号： H02M1/08 , H02M7/538 , H02M7/5387
摘要： To prevent malfunction or breakdown due to a surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted via a level shift circuit which is provided correspondingly to each of switching semiconductor elements forming a main circuit and shifts a level of a reference potential at its output side so as to follow variations of a reference potential of the switching semiconductor element to the switching semiconductor element, but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.
摘要翻译：为了防止由于用于将DC转换成AC等的功率转换器中的浪涌电压的故障或故障，以便向负载提供电力，不仅通过电平移位电路发送控制信号，电平移位电路相应地被提供给每个形成主电路的半导体元件的切换，并使其输出侧的基准电位的电平偏移，以使切换半导体元件的基准电位与开关用半导体元件的变化相对应，而用于供给电力的直流控制电源并且通过电感器和电阻中的至少一个将开关半导体元件的负极连接到电平移位电路。

2. 发明授权

US07081671B2 Power module 失效
标题翻译：电源模块
公开(公告)号：US07081671B2
公开(公告)日：2006-07-25
申请号：US10216789
申请日：2002-08-13
申请人： Masakazu Fukada , Dai Nakajima , Ken Takanashi
发明人： Masakazu Fukada , Dai Nakajima , Ken Takanashi
IPC分类号： H01L23/34
CPC分类号： H01L24/49 , H01L23/473 , H01L24/48 , H01L25/072 , H01L2223/6622 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4824 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： In a power module (111), a free-wheeling diode (1A), an IGBT (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the free wheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diode (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.
摘要翻译：在功率模块（111）中，用于平滑直流电流的续流二极管（1A），IGBT（1B）和电容器（20）直接设置在导电散热器的表面（2 BS）上（2B）带通孔（2 BH）。续流二极管（1A），IGBT（1B）和电容器（20）的后电极例如用焊料接合到散热器（2B），由此二极管（1A）， IGBT（1B）和电容器（20）与散热器（2B）电连接。二极管（1A），IGBT（1B）和电容器（20）的前电极通过电线（7）彼此连接。在散热器（2B）中，冷却介质流过通孔（2 BH）。这样的配置允许功率模块的小型化并且提高功率模块的冷却性能和可靠性。

3. 发明授权

US08987376B2 Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices 有权
标题翻译：用于半导体器件的聚酰亚胺树脂组合物，使用其的半导体器件中形成膜的方法和半导体器件
公开(公告)号：US08987376B2
公开(公告)日：2015-03-24
申请号：US13035536
申请日：2011-02-25
申请人： Toshiyuki Goshima , Sigemasa Segawa , Maw Soe Win , Junichi Yamashita , Ken Takanashi
发明人： Toshiyuki Goshima , Sigemasa Segawa , Maw Soe Win , Junichi Yamashita , Ken Takanashi
IPC分类号： C08G69/26 , C08G73/10 , C08L79/08 , C09D179/08 , H01L23/31
CPC分类号： C08G73/1042 , C08G73/106 , C08L79/08 , C09D179/08 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/19041 , H01L2924/00
摘要： Disclosed is a polyimide composition for semiconductor devices, which has a rheological characteristics suited for screen printing and dispense coating, which has an improved wetting property with various coating bases, by which continuous printing of 500 times or more can be attained, with which blisters, cissing and pinholes are not generated after printing and drying or during drying or curing, which can coat a desired area. A method of forming a film in a semiconductor and semiconductors having the film formed by this method as an insulation film, protective film or the like are also disclosed. The composition for semiconductor devices contains a mixed solvent of a first organic solvent (A) and a second organic solvent (B); and a polyimide resin having at least one group selected from the group consisting of alkyl groups and perfluoroalkyl groups in recurring units, and having thixotropic property, the polyimide resin being dissolved in the mixed solvent.
摘要翻译：公开了一种半导体器件的聚酰亚胺组合物，其具有适用于丝网印刷和分配涂料的流变特性，其具有改善的各种涂层基底的润湿性能，通过该组合物可获得500次以上的连续印刷，在印刷和干燥之后或在干燥或固化期间不产生可以涂覆所需区域的发丝和针孔。还公开了一种在半导体中形成膜的方法以及通过该方法形成的膜作为绝缘膜，保护膜等的半导体。半导体器件用组合物含有第一有机溶剂（A）和第二有机溶剂（B）的混合溶剂。和具有至少一个选自重复单元中的烷基和全氟烷基的基团并且具有触变性的聚酰亚胺树脂，聚酰亚胺树脂溶解在混合溶剂中。

4. 发明申请

US20110213075A1 POLYIMIDE RESIN COMPOSITION FOR SEMICONDUCTOR DEVICES, METHOD OF FORMING FILM IN SEMICONDUCTOR DEVICES USING THE SAME AND SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的聚酰亚胺树脂组合物，使用其和半导体器件在半导体器件中形成膜的方法
公开(公告)号：US20110213075A1
公开(公告)日：2011-09-01
申请号：US13035536
申请日：2011-02-25
申请人： Toshiyuki GOSHIMA , Sigemasa Segawa , Maw Soe Win , Junichi Yamashita , Ken Takanashi
发明人： Toshiyuki GOSHIMA , Sigemasa Segawa , Maw Soe Win , Junichi Yamashita , Ken Takanashi
IPC分类号： C08L79/08 , C08L83/08 , H01L21/56
CPC分类号： C08G73/1042 , C08G73/106 , C08L79/08 , C09D179/08 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/19041 , H01L2924/00
摘要： Disclosed is a polyimide composition for semiconductor devices, which has a rheological characteristics suited for screen printing and dispense coating, which has an improved wetting property with various coating bases, by which continuous printing of 500 times or more can be attained, with which blisters, cissing and pinholes are not generated after printing and drying or during drying or curing, which can coat a desired area. A method of forming a film in a semiconductor and semiconductors having the film formed by this method as an insulation film, protective film or the like are also disclosed. The composition for semiconductor devices contains a mixed solvent of a first organic solvent (A) and a second organic solvent (B); and a polyimide resin having at least one group selected from the group consisting of alkyl groups and perfluoroalkyl groups in recurring units, and having thixotropic property, the polyimide resin being dissolved in the mixed solvent.
摘要翻译：公开了一种半导体器件的聚酰亚胺组合物，其具有适用于丝网印刷和分配涂料的流变特性，其具有改善的各种涂层基底的润湿性能，通过该组合物可获得500次以上的连续印刷，在印刷和干燥之后或在干燥或固化期间不产生可以涂覆所需区域的发丝和针孔。还公开了一种在半导体中形成膜的方法以及通过该方法形成的膜作为绝缘膜，保护膜等的半导体。半导体器件用组合物含有第一有机溶剂（A）和第二有机溶剂（B）的混合溶剂。和具有至少一个选自重复单元中的烷基和全氟烷基的基团并且具有触变性的聚酰亚胺树脂，聚酰亚胺树脂溶解在混合溶剂中。

5. 发明授权

US06501172B1 Power module 有权
标题翻译：电源模块
公开(公告)号：US06501172B1
公开(公告)日：2002-12-31
申请号：US09671172
申请日：2000-09-28
申请人： Masakazu Fukada , Dai Nakajima , Ken Takanashi
发明人： Masakazu Fukada , Dai Nakajima , Ken Takanashi
IPC分类号： H01L2310
CPC分类号： H01L24/49 , H01L23/473 , H01L24/48 , H01L25/072 , H01L2223/6622 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4824 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： In a powder module (111), a free-wheeling diode (1A), an IGBH (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the free-wheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diodes (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.
摘要翻译：在粉末模块（111）中，用于平滑直流电流的续流二极管（1A），IGBH（1B）和电容器（20）直接设置在导电散热器（2B）的表面（2BS）上，带通孔（2BH）。续流二极管（1A），IGBT（1B）和电容器（20）的后电极例如用焊料接合到散热器（2B），由此二极管（1A），IGBT（1B ），电容器（20）与散热器（2B）电连接。二极管（1A），IGBT（1B）和电容器（20）的前电极通过电线（7）彼此连接。在散热器（2B）中，冷却介质流过通孔（2BH）。这样的配置允许功率模块的小型化并且提高功率模块的冷却性能和可靠性。

6. 发明授权

US06304448B1 Power module 有权
标题翻译：电源模块
公开(公告)号：US06304448B1
公开(公告)日：2001-10-16
申请号：US09657236
申请日：2000-09-07
申请人： Masakazu Fukada , Dai Nakajima , Ken Takanashi
发明人： Masakazu Fukada , Dai Nakajima , Ken Takanashi
IPC分类号： H01K720
CPC分类号： H05K7/209 , H01L24/73 , H01L2224/32225 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H05K1/144 , H01L2924/00012 , H01L2924/00
摘要： Obtained is a power module which is excellent in electromagnetic shielding effects, is rarely influenced by external noises and acts as an external noise source with difficulty. An insulating substrate (5) is bonded through a solder (4) to a top surface of a heat sink (3) fixed to a support plate (2). A DC capacitor (16) is fixed to a bottom face of the heat sink (3) by adhesion. A control substrate (11) having a control IC (13) mounted thereon is fixed to the support plate (2). Moreover, a plurality of electrodes (10), a DC side electrode and refrigerant inlet-outlet (9) and a control connector (15) are provided on the support plate (2). A case (1) is fixed to a peripheral portion of the support plate (2), and surrounds the insulating substrate (5), the control substrate (11), the heat sink (3) and the DC capacitor 16 together with the support plate (2). Both the case (1) and the support plate (2) have conducting property.
摘要翻译：获得的是电磁屏蔽效果优异的电源模块，很少受到外部噪声的影响，作为外部噪声源的困难。绝缘基板（5）通过焊料（4）接合到固定到支撑板（2）的散热器（3）的顶表面。直流电容器（16）通过粘附固定在散热器（3）的底面上。安装有控制IC（13）的控制基板（11）固定在支撑板（2）上。此外，在支撑板（2）上设置有多个电极（10），DC侧电极和制冷剂入口出口（9）以及控制连接器（15）。壳体（1）固定在支撑板（2）的周边部分，并与支撑体（1）一起包围绝缘基板（5），控制基板（11），散热片（3）和直流电容器16 板（2）。壳体（1）和支撑板（2）都具有导电性能。

7. 发明授权

US5444297A Noise resistant semiconductor power module 失效
标题翻译：耐噪声半导体功率模块
公开(公告)号：US5444297A
公开(公告)日：1995-08-22
申请号：US75316
申请日：1993-06-11
申请人： Seiichi Oshima , Fumitaka Tametani , Jun Yamagata , Ken Takanashi
发明人： Seiichi Oshima , Fumitaka Tametani , Jun Yamagata , Ken Takanashi
IPC分类号： H01L29/78 , H01L23/538 , H01L23/64 , H01L25/07 , H01L25/16 , H01L25/18 , H01L27/04 , H01L29/739 , H02M7/5387 , H05K1/02 , H05K1/14 , H05K3/46 , H05K9/00 , H01L23/12 , H01L23/52 , H01L25/065
CPC分类号： H01L25/162 , H01L23/5383 , H01L23/642 , H01L24/06 , H01L24/49 , H01L25/16 , H05K1/0218 , H05K9/0039 , H01L2223/6644 , H01L2224/04042 , H01L2224/05599 , H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3011 , H01L2924/3025 , H05K1/0219 , H05K1/0262 , H05K1/144 , H05K2201/093 , H05K2201/10015 , H05K2201/10689
摘要： In a circuit board having four-layered conductive pattern on which a control circuit is arranged, wiring sub-patterns 133a in the first layer are divided into four areas A1-A3 and A8, for respective sets of circuit parts having same power potentials. Respective sub-patterns belonging to the areas A1-A3 are partially or fully surrounded by wiring sub-patterns PEa1 PEa3 connected to negative power potentials of circuit parts belonging to respective areas, respectively. Similarly, at least part of a wiring patten Pa2 for transmitting an input signal to a semiconductor active element is surrounded by a wiring pattern PEa4. Penetration of electric noises to the wiring patterns for the control circuit, in particular to the wiring pattern for transmitting the input signal to semiconductor element, is decreased to thereby prevent misoperation due to electric noises.
摘要翻译：在具有布置有控制电路的四层导电图案的电路板中，对于具有相同功率电位的各组电路部分，将第一层中的布线子图案133a分成四个区域A1-A3和A8。属于区域A1-A3的各个子图案分别被部分地或完全地被连接到属于各个区域的电路部分的负功率电位的布线子图案PEa1 PEa3包围。类似地，用于将输入信号发送到半导体有源元件的布线图案Pa2的至少一部分被布线图案PEa4包围。对于控制电路的布线图案，特别是用于将输入信号传送到半导体元件的布线图形，电噪声的渗透被减小，从而防止由于电噪声引起的误操作。

8. 发明授权

US4982261A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4982261A
公开(公告)日：1991-01-01
申请号：US172271
申请日：1988-03-23
申请人： Ken Takanashi
发明人： Ken Takanashi
IPC分类号： H01L29/74 , H01L29/747
CPC分类号： H01L29/747
摘要： Respective side ends (20s, 1s) of a T.sub.1 electrode (20) and a gate electrode (1) of a TRIAC (70) are mutually adjacent and located on a P.sub.1 layer (13). The side ends (20s, 1s) are connected electrically by a resistance area (13a) which is made of the same material as a semiconductor material used to make the P.sub.1 layer (13). A gate current branches into first and second branch currents (I.sub.GT1, I.sub.GT2). Because the second branch current does not contribute to the turn on of the TRIAC, undesirable (dv/dt) turn on is prevented.
摘要翻译： T1电极（20）的相对侧端（20s，1s）和TRIAC（70）的栅电极（1）相互相邻并位于P1层（13）上。侧端（20s，1s）由与用于制造P1层（13）的半导体材料相同的材料制成的电阻区域（13a）电连接。栅极电流分支到第一和第二分支电流（IGT1，IGT2）。因为第二分支电流对TRIAC的导通没有贡献，所以不能（dv / dt）导通被阻止。

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