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1. 发明授权

US08502305B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08502305B2
公开(公告)日：2013-08-06
申请号：US13421816
申请日：2012-03-15
申请人： Tsuyoshi Ohta , Tatsuya Nishiwaki , Norio Yasuhara , Masatoshi Arai , Takahiro Kawano
发明人： Tsuyoshi Ohta , Tatsuya Nishiwaki , Norio Yasuhara , Masatoshi Arai , Takahiro Kawano
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L21/2255 , H01L21/26586 , H01L29/0696 , H01L29/0856 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/42376 , H01L29/66734 , H01L29/861
摘要： According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
摘要翻译：根据实施例，半导体器件包括第一导电类型的半导体层，设置在半导体层上的第二导电类型的基极区域和设置在基极区域上的第二导电类型的第一接触区域。该器件包括设置在穿过第一接触区域和基极区域的沟槽中的栅电极，以及设置在栅极上并包含第一导电型杂质元素的层间绝缘膜。该器件还包括设置在层间绝缘膜和第一接触区域之间的第一导电类型的源极区域，源极区域与层间绝缘膜的侧面接触并且在基极区域中延伸。

2. 发明申请

US20090050469A1 ALIGNMENT FILM FORMING APPARATUS AND METHOS 有权
标题翻译：对准膜形成装置和甲基纤维素
公开(公告)号：US20090050469A1
公开(公告)日：2009-02-26
申请号：US12174897
申请日：2008-07-17
申请人： Shoichi Doi , Tatsuya Nishiwaki
发明人： Shoichi Doi , Tatsuya Nishiwaki
IPC分类号： C23C14/00
CPC分类号： C23C14/221 , C23C14/042 , C23C14/0605 , C23C14/225 , C23C14/3442 , C23C14/46 , G02F1/133734 , G02F1/13378 , H01J37/3411 , H01J37/3426 , H01J2237/3146
摘要： An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target.
摘要翻译：提供了一种取向膜形成装置和方法，以在同时执行离子束溅射的成膜工艺和对准工艺的单个工艺中形成用于液晶的取向膜。该方法大大限制了基板的尺寸。取向膜形成装置包括：设置在基板的顶面侧的靶，具有与基板的上表面形成锐角的溅射面;将基板沿预定方向转印的转印台;离子源设置在基板的顶面侧，使得离子束照射在靶的溅射表面上。在溅射表面反射的离子束照射在形成在基板上的溅射膜上。该装置包括掩模，其设置成覆盖形成溅射膜的位置的上游侧的基板顶表面的一部分，以及调节靶的温度的温度调节器。

3. 发明授权

US07525107B2 Apparatus and method for forming an alignment layer 有权
标题翻译：用于形成取向层的装置和方法
公开(公告)号：US07525107B2
公开(公告)日：2009-04-28
申请号：US11566716
申请日：2006-12-05
申请人： Johji Nakagaki , Akihiro Asahara , Hideo Kimura , Hiroaki Kitahara , Tatsuya Nishiwaki , Yasuhiko Shiota , Takeshi Yamada
发明人： Johji Nakagaki , Akihiro Asahara , Hideo Kimura , Hiroaki Kitahara , Tatsuya Nishiwaki , Yasuhiko Shiota , Takeshi Yamada
IPC分类号： G21G5/00
CPC分类号： G02F1/13378 , H01J2237/316
摘要： An apparatus and method for forming an alignment layer with uniform orientation is provided. An alignment layer-forming apparatus includes an ion source for generating ion beams and one or more masks disposed between the ion source and a substrate. The masks each have a reflective face directed to the substrate. The ion beams are reflected between the reflective face of each mask and a thin-film which is disposed on the substrate and which is processed into an alignment layer, whereby the alignment layer is formed with the ion beam finally applied to the thin-film. The orientation of a liquid crystal can be rendered uniform by varying the shape and/or arrangement of the reflective face of the mask. Hence, a liquid crystal display with no brightness or color non-uniformity can be manufactured.
摘要翻译：提供了一种用于形成具有均匀取向的取向层的装置和方法。配向层形成装置包括用于产生离子束的离子源和设置在离子源和衬底之间的一个或多个掩模。掩模各自具有指向基板的反射面。离子束在每个掩模的反射面和设置在基板上的薄膜之间反射，并被处理成取向层，由此形成最终施加到薄膜上的离子束的取向层。通过改变掩模的反射面的形状和/或布置，液晶的取向可以变得均匀。因此，可以制造没有亮度或颜色不均匀的液晶显示器。

4. 发明申请

US20080011969A1 Apparatus and Method for Forming an Alignment Layer 有权
标题翻译：用于形成对准层的装置和方法
公开(公告)号：US20080011969A1
公开(公告)日：2008-01-17
申请号：US11566716
申请日：2006-12-05
申请人： Johji Nakagaki , Akihiro Asahara , Hideo Kimura , Hiroaki Kitahara , Tatsuya Nishiwaki , Yasuhiko Shiota , Takeshi Yamada
发明人： Johji Nakagaki , Akihiro Asahara , Hideo Kimura , Hiroaki Kitahara , Tatsuya Nishiwaki , Yasuhiko Shiota , Takeshi Yamada
IPC分类号： G21G5/00
CPC分类号： G02F1/13378 , H01J2237/316
摘要： An apparatus and method for forming an alignment layer with uniform orientation is provided. An alignment layer-forming apparatus includes an ion source for generating ion beams and one or more masks disposed between the ion source and a substrate. The masks each have a reflective face directed to the substrate. The ion beams are reflected between the reflective face of each mask and a thin-film which is disposed on the substrate and which is processed into an alignment layer, whereby the alignment layer is formed with the ion beam finally applied to the thin-film. The orientation of a liquid crystal can be rendered uniform by varying the shape and/or arrangement of the reflective face of the mask. Hence, a liquid crystal display with no brightness or color non-uniformity can be manufactured.
摘要翻译：提供了一种用于形成具有均匀取向的取向层的装置和方法。配向层形成装置包括用于产生离子束的离子源和设置在离子源和衬底之间的一个或多个掩模。掩模各自具有指向基板的反射面。离子束在每个掩模的反射面和设置在基板上的薄膜之间反射，并被处理成取向层，由此形成最终施加到薄膜上的离子束的取向层。通过改变掩模的反射面的形状和/或布置，液晶的取向可以变得均匀。因此，可以制造没有亮度或颜色不均匀的液晶显示器。

5. 发明授权

US08629505B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08629505B2
公开(公告)日：2014-01-14
申请号：US13053069
申请日：2011-03-21
申请人： Tatsuya Nishiwaki
发明人： Tatsuya Nishiwaki
IPC分类号： H01L21/76
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/66734
摘要： A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
摘要翻译：半导体器件包括：漏极层; 设置在漏极层上的漂移层; 设置在漂移层上的基极区域; 选择性地设置在所述基底区域的表面上的源极区域; 第一门现场板; 第二门漏电极; 和源电极。第一栅电极经由第一绝缘膜设置在多个第一沟槽中的每一个中。第一沟槽从源极区域的表面穿过基极区域并接触漂移层。场板电极通过第二绝缘膜设置在第一栅电极下的第一沟槽中。第二栅电极经由第三绝缘膜设置在第二沟槽中。第二沟槽从源极区域的表面穿过基极区域并与第一沟槽之间的漂移层接触。

6. 发明授权

US09034151B2 Alignment film forming apparatus and method 有权
标题翻译：定向膜形成装置和方法
公开(公告)号：US09034151B2
公开(公告)日：2015-05-19
申请号：US12174897
申请日：2008-07-17
申请人： Shoichi Doi , Tatsuya Nishiwaki
发明人： Shoichi Doi , Tatsuya Nishiwaki
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , C23C14/34 , C23C14/06 , H01J37/34 , C23C14/04 , C23C14/46 , G02F1/1337 , C23C14/22
CPC分类号： C23C14/221 , C23C14/042 , C23C14/0605 , C23C14/225 , C23C14/3442 , C23C14/46 , G02F1/133734 , G02F1/13378 , H01J37/3411 , H01J37/3426 , H01J2237/3146
摘要： An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target.
摘要翻译：提供了一种取向膜形成装置和方法，以在同时执行离子束溅射的成膜工艺和对准工艺的单个工艺中形成用于液晶的取向膜。该方法大大限制了基板的尺寸。取向膜形成装置包括：设置在基板的顶面侧的靶，具有与基板的上表面形成锐角的溅射面;将基板沿预定方向转印的转印台;离子源设置在基板的顶面侧，使得离子束照射在靶的溅射表面上。在溅射表面反射的离子束照射在形成在基板上的溅射膜上。该装置包括掩模，其设置成覆盖形成溅射膜的位置的上游侧的基板顶表面的一部分，以及调节靶的温度的温度调节器。

7. 发明申请

US20130248998A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130248998A1
公开(公告)日：2013-09-26
申请号：US13619336
申请日：2012-09-14
申请人： Shinichiro Misu , Tsuyoshi Ota , Tatsuya Nishiwaki , Takeshi Uchihara , Yusuke Kawaguchi
发明人： Shinichiro Misu , Tsuyoshi Ota , Tatsuya Nishiwaki , Takeshi Uchihara , Yusuke Kawaguchi
IPC分类号： H01L29/78
CPC分类号： H01L29/7801 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/407 , H01L29/4175 , H01L29/42368 , H01L29/42376 , H01L29/66704 , H01L29/66734 , H01L29/66787 , H01L29/7813 , H01L29/7825 , H01L29/872
摘要： According to one embodiment, a semiconductor device includes, a drain, source, base and drift regions, a gate electrode, a gate insulating film, a first semiconductor region, a drain electrode, and a source electrode. The drain region has a first portion, and a second portion having a surface extending in a first direction which is vertical to a main surface of the first portion. The source region extends in a second direction which is parallel to the second portion, and is provided to be spaced from the drain region. The gate electrode extends in the first direction and a third direction which is vertical to the first direction and the second direction, and passes through the base region in the third direction. The first semiconductor region is provided between the gate insulating film and the drain region, and has a lower impurity concentration than the drift region.
摘要翻译：根据一个实施例，半导体器件包括漏极，源极，基极和漂移区，栅电极，栅绝缘膜，第一半导体区，漏电极和源电极。漏区具有第一部分，第二部分具有沿垂直于第一部分的主表面的第一方向延伸的表面。源极区域在与第二部分平行的第二方向上延伸，并且设置成与漏极区域间隔开。栅极电极在第一方向和与第一方向和第二方向垂直的第三方向上延伸，并且在第三方向上穿过基极区域。第一半导体区域设置在栅极绝缘膜和漏极区之间，并且具有比漂移区更低的杂质浓度。

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