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1. 发明申请

US20120067846A1 Liquid Processing Method, Recording Medium Having Recorded Program for Executing Liquid Processing Method Therein and Liquid Processing Apparatus 有权
标题翻译：液体处理方法，具有用于执行液体处理方法的记录程序的记录介质和液体处理装置
公开(公告)号：US20120067846A1
公开(公告)日：2012-03-22
申请号：US13223543
申请日：2011-09-01
申请人： Tsuyoshi Mizuno , Hiromitsu Namba , Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada , Fumiaki Hayase
发明人： Tsuyoshi Mizuno , Hiromitsu Namba , Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada , Fumiaki Hayase
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： C23F1/08 , H01L21/02087 , H01L21/0209 , H01L21/6708 , H01L21/68785 , H01L21/68792
摘要： Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.
摘要翻译：公开了一种用于处理包括第一工艺和第二工艺的衬底的方法。第一种方法包括通过可旋转地安装的支撑单元在其前表面和后表面上支撑由含钛膜形成的基板; 与支撑单元一起旋转基板; 并将含有氢氟酸的第一处理液体供给到所述基板的后表面，由此用所述第一处理液处理所述基板的后表面。第二种方法包括在第一工艺完成之后，将含有氨过氧化氢混合物的第二处理液体供应到衬底的后表面，由此用第二处理液处理衬底的后表面。

2. 发明授权

US08815112B2 Liquid processing method, recording medium having recorded program for executing liquid processing method therein and liquid processing apparatus 有权
标题翻译：液体处理方法，具有用于执行液体处理方法的记录程序的记录介质和液体处理装置
公开(公告)号：US08815112B2
公开(公告)日：2014-08-26
申请号：US13223543
申请日：2011-09-01
申请人： Tsuyoshi Mizuno , Hiromitsu Namba , Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada , Fumiaki Hayase
发明人： Tsuyoshi Mizuno , Hiromitsu Namba , Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada , Fumiaki Hayase
IPC分类号： C25F3/00 , C23F1/08 , H01L21/67 , H01L21/02 , H01L21/687
CPC分类号： C23F1/08 , H01L21/02087 , H01L21/0209 , H01L21/6708 , H01L21/68785 , H01L21/68792
摘要： Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.
摘要翻译：公开了一种用于处理包括第一工艺和第二工艺的衬底的方法。第一种方法包括通过可旋转地安装的支撑单元在其前表面和后表面上支撑由含钛膜形成的基板; 与支撑单元一起旋转基板; 并将含有氢氟酸的第一处理液体供给到所述基板的后表面，由此用所述第一处理液处理所述基板的后表面。第二种方法包括在第一工艺完成之后，将含有氨过氧化氢混合物的第二处理液体供应到衬底的后表面，由此用第二处理液处理衬底的后表面。

3. 发明授权

US08389421B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08389421B2
公开(公告)日：2013-03-05
申请号：US13115601
申请日：2011-05-25
申请人： Katsushige Harada , Yuichiro Morozumi , Shingo Hishiya
发明人： Katsushige Harada , Yuichiro Morozumi , Shingo Hishiya
IPC分类号： H01L21/316
CPC分类号： H01L21/02189 , H01L21/02159 , H01L21/022 , H01L21/0228 , H01L28/40
摘要： When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film.
摘要翻译：当待加工物体被转移到能够保持真空的处理室中并且处理室的内部保持在真空状态时，成膜方法包括在待加工物体上通过供给来形成第一ZrO膜锆材料和氧化剂，按照上述顺序，通过以上述顺序供给锆材料，硅材料和氧化剂，在待处理物体上形成掺杂有Si的第二ZrO膜，以这样的方式分别进行处理室中多次进行第一ZrO膜的形成和进行第二ZrO膜的形成次数，形成具有规定的氧化锆系膜的氧化锆系膜同时控制膜中的Si浓度。

4. 发明授权

US08642127B2 Method of forming titanium nitride film 失效
标题翻译：形成氮化钛膜的方法
公开(公告)号：US08642127B2
公开(公告)日：2014-02-04
申请号：US13404547
申请日：2012-02-24
申请人： Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada
发明人： Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada
IPC分类号： C23C16/34
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/45542 , H01L21/28562
摘要： According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.
摘要翻译：根据形成氮化钛膜的方法，首先，使用升温加热器将容纳半导体晶片的反应管的内部加热至200℃〜350℃。然后，通过向反应管中供给包含钛原料的成膜气体，在半导体晶片上形成氮化钛膜。作为钛原料，使用不包含氯原子并含有钛的甲基环戊二烯基三（二甲基氨基）钛。

5. 发明授权

US07368384B2 Film formation apparatus and method of using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US07368384B2
公开(公告)日：2008-05-06
申请号：US11110931
申请日：2005-04-21
申请人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
发明人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
IPC分类号： H01L21/302
CPC分类号： B08B7/0035 , C23C16/4405 , Y10S438/90
摘要： A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.
摘要翻译：使用半导体工艺的成膜装置的方法包括除去沉积在成膜装置的反应室的内表面上的副产物膜的步骤。在向反应室供给含有氟化氢的清洁气体的同时进行该步骤，并且在反应室内形成允许水以液膜形式存在的第一气氛。

6. 发明申请

US20130292700A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20130292700A1
公开(公告)日：2013-11-07
申请号：US13981048
申请日：2012-01-23
申请人： Akinobu Teramoto , Hiroshi Kambayashi , Hirokazu Ueda , Yuichiro Morozumi , Katsushige Harada , Kazuhide Hasebe , Tadahiro Ohmi
发明人： Akinobu Teramoto , Hiroshi Kambayashi , Hirokazu Ueda , Yuichiro Morozumi , Katsushige Harada , Kazuhide Hasebe , Tadahiro Ohmi
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/0254 , H01L21/28264 , H01L23/564 , H01L29/2003 , H01L29/205 , H01L29/42364 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.
摘要翻译：一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。

7. 发明申请

US20050245099A1 Film formation apparatus and method of using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20050245099A1
公开(公告)日：2005-11-03
申请号：US11110931
申请日：2005-04-21
申请人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
发明人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
IPC分类号： B08B5/00 , B08B7/00 , B08B7/04 , C23C16/00 , C23C16/44 , H01L21/304 , H01L21/3065 , H01L21/31 , H01L21/469
CPC分类号： B08B7/0035 , C23C16/4405 , Y10S438/90
摘要： A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.
摘要翻译：使用半导体工艺的成膜装置的方法包括除去沉积在成膜装置的反应室的内表面上的副产物膜的步骤。在向反应室供给含有氟化氢的清洁气体的同时进行该步骤，并且在反应室内形成允许水以液膜形式存在的第一气氛。

8. 发明授权

US09230799B2 Method for fabricating semiconductor device and the semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US09230799B2
公开(公告)日：2016-01-05
申请号：US13981048
申请日：2012-01-23
申请人： Akinobu Teramoto , Hiroshi Kambayashi , Hirokazu Ueda , Yuichiro Morozumi , Katsushige Harada , Kazuhide Hasebe , Tadahiro Ohmi
发明人： Akinobu Teramoto , Hiroshi Kambayashi , Hirokazu Ueda , Yuichiro Morozumi , Katsushige Harada , Kazuhide Hasebe , Tadahiro Ohmi
IPC分类号： H01L29/20 , H01L21/02 , H01L21/28 , H01L29/66 , H01L29/778 , H01L29/423 , H01L23/00 , H01L29/205 , H01L29/51
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/0254 , H01L21/28264 , H01L23/564 , H01L29/2003 , H01L29/205 , H01L29/42364 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.
摘要翻译：一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。

9. 发明授权

US07041546B2 Film forming method for depositing a plurality of high-k dielectric films 有权
标题翻译：用于沉积多个高k电介质膜的成膜方法
公开(公告)号：US07041546B2
公开(公告)日：2006-05-09
申请号：US10639773
申请日：2003-08-13
申请人： Yuichiro Morozumi , Kazuhide Hasebe , Shigeru Nakajima , Haruhiko Furuya , Dong-Kyun Choi , Takahito Umehara , Katsushige Harada , Tomonori Fujiwara , Hirotake Fujita
发明人： Yuichiro Morozumi , Kazuhide Hasebe , Shigeru Nakajima , Haruhiko Furuya , Dong-Kyun Choi , Takahito Umehara , Katsushige Harada , Tomonori Fujiwara , Hirotake Fujita
IPC分类号： H01L21/8238
CPC分类号： H01L28/56 , H01L21/31612 , H01L21/31637 , H01L21/31645 , H01L28/40
摘要： In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.
摘要翻译：在MIM（金属 - 绝缘体 - 金属）结构的电容器中，含有硅原子的含硅高电介质膜（例如，硅酸铪膜）以及无硅高介电膜（例如，钽不含硅原子的氧化膜插入由金属或金属化合物制成的下电极膜和上电极膜之间。通过添加含硅高介电膜，可以抑制泄漏电流，并且可以减少伴随施加电压变化的电容器容量的变化。

10. 发明申请

US20100035439A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100035439A1
公开(公告)日：2010-02-11
申请号：US12536913
申请日：2009-08-06
申请人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
发明人： Yoshihiro Ishida , Katsushige Harada , Takuya Sugawara
IPC分类号： H01L21/31
CPC分类号： H01L21/31641 , C23C16/40 , C23C16/45529 , C23C16/45546
摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
摘要翻译：本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数表演。

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