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1. 发明授权

US07041546B2 Film forming method for depositing a plurality of high-k dielectric films 有权
标题翻译：用于沉积多个高k电介质膜的成膜方法
公开(公告)号：US07041546B2
公开(公告)日：2006-05-09
申请号：US10639773
申请日：2003-08-13
申请人： Yuichiro Morozumi , Kazuhide Hasebe , Shigeru Nakajima , Haruhiko Furuya , Dong-Kyun Choi , Takahito Umehara , Katsushige Harada , Tomonori Fujiwara , Hirotake Fujita
发明人： Yuichiro Morozumi , Kazuhide Hasebe , Shigeru Nakajima , Haruhiko Furuya , Dong-Kyun Choi , Takahito Umehara , Katsushige Harada , Tomonori Fujiwara , Hirotake Fujita
IPC分类号： H01L21/8238
CPC分类号： H01L28/56 , H01L21/31612 , H01L21/31637 , H01L21/31645 , H01L28/40
摘要： In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.
摘要翻译：在MIM（金属 - 绝缘体 - 金属）结构的电容器中，含有硅原子的含硅高电介质膜（例如，硅酸铪膜）以及无硅高介电膜（例如，钽不含硅原子的氧化膜插入由金属或金属化合物制成的下电极膜和上电极膜之间。通过添加含硅高介电膜，可以抑制泄漏电流，并且可以减少伴随施加电压变化的电容器容量的变化。

2. 发明申请

US20050176261A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20050176261A1
公开(公告)日：2005-08-11
申请号：US10957827
申请日：2004-10-05
申请人： Takahito Umehara , Masahiko Tomita , Hirotake Fujita , Kazuhide Hasebe
发明人： Takahito Umehara , Masahiko Tomita , Hirotake Fujita , Kazuhide Hasebe
IPC分类号： C23C16/455 , C23C16/18 , C23C16/40 , H01L21/02 , H01L21/205 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/31 , H01L21/316 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76876 , C23C16/18 , C23C16/40 , C23C16/45525 , C23C16/45546 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L28/65
摘要： A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.
摘要翻译：半导体工艺的成膜方法包括种子膜形成和主要成膜。在种子膜形成中，将含金属的原料气体和与其反应的第一辅助气体供给到容纳具有下层的目标基板的处理容器中，由此通过CVD在下层上形成种子膜。在主成膜中，将原料气体和与其反应的第二辅助气体供给到处理容器中，由此通过CVD在种子膜上形成主膜。种子膜形成包括交替且连续地执行的第一和第二周期。在第一期间，在第一辅助气体停止的同时将原料气体供给到处理容器。在第二期间，在停止原料气体的同时，将第一辅助气体供给到处理容器。

3. 发明授权

US07229917B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07229917B2
公开(公告)日：2007-06-12
申请号：US10957827
申请日：2004-10-05
申请人： Takahito Umehara , Masahiko Tomita , Hirotake Fujita , Kazuhide Hasebe
发明人： Takahito Umehara , Masahiko Tomita , Hirotake Fujita , Kazuhide Hasebe
IPC分类号： H01L21/4763
CPC分类号： H01L21/76876 , C23C16/18 , C23C16/40 , C23C16/45525 , C23C16/45546 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L28/65
摘要： A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.
摘要翻译：半导体工艺的成膜方法包括种子膜形成和主要成膜。在种子膜形成中，将含金属的原料气体和与其反应的第一辅助气体供给到容纳具有下层的目标基板的处理容器中，由此通过CVD在下层上形成种子膜。在主成膜中，将原料气体和与其反应的第二辅助气体供给到处理容器中，由此通过CVD在种子膜上形成主膜。种子膜形成包括交替且连续地执行的第一和第二周期。在第一期间，在第一辅助气体停止的同时将原料气体供给到处理容器。在第二期间，在停止原料气体的同时，将第一辅助气体供给到处理容器。

4. 发明授权

US07651733B2 Method for forming a vapor phase growth film 有权
标题翻译：形成气相生长膜的方法
公开(公告)号：US07651733B2
公开(公告)日：2010-01-26
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体喷出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

5. 发明申请

US20060257568A1 Vapor-phase growing unit 有权
标题翻译：气相生长装置
公开(公告)号：US20060257568A1
公开(公告)日：2006-11-16
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体吐出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

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