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1. 发明授权

US5213148A Production process of solidified amorphous alloy material 失效
标题翻译：固溶非晶合金材料的生产工艺
公开(公告)号：US5213148A
公开(公告)日：1993-05-25
申请号：US664056
申请日：1991-03-01
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Yutaka Sato , Kazuhiko Kita
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Yutaka Sato , Kazuhiko Kita
IPC分类号： B22D11/06 , B22D13/04 , B22D17/22 , B22D27/04 , B22D41/60 , C22C1/02
CPC分类号： B22D41/60 , B22D11/0682 , B22D13/04 , B22D17/2218 , B22D27/04
摘要： A solidified amorphous alloy material is produced from a melt of its desired metal material. A melt feeding route is provided with a first-stage quenching zone. The melt is quenched to a predetermined temperature in the first-stage quenching zone. The thus-quenched melt is then introduced into a second-stage quenching and solidification zone, whereby the melt is cooled further and solidified into a solidified material having an amorphous phase.
摘要翻译：固化的非晶合金材料由其所需的金属材料的熔体制成。熔体供给路径设置有第一级淬火区域。将熔体在第一阶段淬火区骤冷至预定温度。然后将如此骤冷的熔体引入第二阶段淬火和固化区，由此使熔体进一步冷却并固化成具有非晶相的固化材料。

2. 发明授权

US5318641A Particle-dispersion type amorphous aluminum-alloy having high strength 失效
标题翻译：具有高强度的粒子分散型无定形铝合金
公开(公告)号：US5318641A
公开(公告)日：1994-06-07
申请号：US710035
申请日：1991-06-06
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi , Hiroyuki Horimura , Noriaki Matsumoto
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi , Hiroyuki Horimura , Noriaki Matsumoto
IPC分类号： C22C45/08
CPC分类号： C22C45/08
摘要： Al.sub.100-a-b-c X.sub.a M.sub.b T.sub.c, in which X is Y (yttrium) and/or rare-earth element(s), M is Fe, Co, and/or Ni, and T is Mn, Mo, Cr, Zr and/or V, and, a=0.5-5 atomic %, b=5-15 atomic %, and c=0.2-3.0 atomic %, and, further, X and M fall on and within the hatched region range of the appended FIG. 1, has a complex, amorphous-crystalline structure with an amorphous matrix containing the Al, X, M and T, and minority crystalline phase consisting of aluminum-alloy particles containing super-saturated X, M and T as solutes. The alloy has a high strength due to the dispersed crystalline particles.
摘要翻译： Al100-ab-cXaMbTc，其中X是Y（钇）和/或稀土元素，M是Fe，Co和/或Ni，T是Mn，Mo，Cr，Zr和/或V ，a = 0.5-5原子％，b = 5〜15原子％，c = 0.2〜3.0原子％，进一步地，X和M落在附图1的阴影区域范围内。 1，具有含有Al，X，M和T的无定形基质的复杂的非结晶结构，以及由含有超饱和X，M和T作为溶质的铝合金颗粒组成的少数结晶相。该合金由于分散的结晶颗粒而具有高强度。

3. 发明授权

US5306363A Thin aluminum-based alloy foil and wire and a process for producing same 失效
标题翻译：薄铝基合金箔和线及其制造方法
公开(公告)号：US5306363A
公开(公告)日：1994-04-26
申请号：US574654
申请日：1990-08-20
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Kazuhiko Kita
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Kazuhiko Kita
IPC分类号： B21C1/00 , C21D8/02 , C21D8/06 , C22C45/08 , C22F1/00
CPC分类号： C22C45/08
摘要： An aluminum-based alloy foil or thin aluminum-based alloy wire is produced from an amorphous material made by a quenching and solidifying process and having a composition represented by the general formula:Al.sub.a M.sub.b X.sub.cwherein M is one or more elements selected from a group consisting of V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Ti, Mo, W, Ca, Li, Mg and Si; X is one or more elements selected from a group consisting of Y, Nb, Hf, Ta, La, Ce, Sm, Nd and Mm (misch metal); and a, b, and c are atomic percentages falling within the following range:50.ltoreq.a.ltoreq.950.5.ltoreq.b.ltoreq.35 and0.5.ltoreq.c.ltoreq.25Such foil or wire has a smooth surface and a very small and uniform foil thickness or wire diameter, contains at least 50% by volume of an amorphous phase, and has excellent strength and resistance to corrosion. The foil thickness and wire diameter are reduced in a rolling or drawing process at an elevated temperature over a short time period.
摘要翻译：铝基合金箔或薄铝基合金线由淬火和固化方法制成的无定形材料制成，具有由以下通式表示的组成：AlaMbXc，其中M是选自以下的一种或多种元素： V，Cr，Mn，Fe，Co，Ni，Cu，Zr，Ti，Mo，W，Ca，Li，Mg和Si; X是选自Y，Nb，Hf，Ta，La，Ce，Sm，Nd和Mm（混合稀土金属）中的一种或多种元素; 和a，b和c是原子百分比在以下范围内：50 <= a <= 95 0.5 <= b <= 35和0.5 <= c <= 25这种箔或线具有光滑的表面和非常小的箔厚度均匀，线径均匀，含有至少50体积％的非晶相，具有优异的强度和耐腐蚀性。箔片厚度和线径在轧制或拉伸过程中在较短的时间内在升高的温度下降低。

4. 发明申请

US20070026890A1 Private branch exchange 审中-公开
标题翻译：私人交流
公开(公告)号：US20070026890A1
公开(公告)日：2007-02-01
申请号：US10571110
申请日：2004-12-03
申请人： Koji Nakagawa , Katsuya Matsufji , Manabu Fujioka , Koji Tanabe , Noriaki Matsumoto
发明人： Koji Nakagawa , Katsuya Matsufji , Manabu Fujioka , Koji Tanabe , Noriaki Matsumoto
IPC分类号： H04M1/00
CPC分类号： H04Q3/625 , H04Q2213/13098 , H04Q2213/1322 , H04Q2213/1336 , H04W84/16
摘要： When an exchange detects that a wireless base station is connected to an extension interface, the exchange outputs a sync signal to a communication channel of the extension interface. Based on the sync signal received through the communication channel, the wireless base station outputs a radio signal so as to communicate with a wireless handset based on the sync signal.
摘要翻译：当交换机检测到无线基站连接到分机接口时，交换机向同步分机接口的通信信道输出同步信号。基于通过通信信道接收的同步信号，无线基站输出无线电信号，以便基于同步信号与无线手机进行通信。

5. 发明授权

US4873669A Random access memory device operable in a normal mode and in a test mode 失效
标题翻译：随机存取存储器件可在正常模式和测试模式下操作
公开(公告)号：US4873669A
公开(公告)日：1989-10-10
申请号：US77306
申请日：1987-07-24
申请人： Kiyohiro Furutani , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Yoshio Matsuda
发明人： Kiyohiro Furutani , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Yoshio Matsuda
IPC分类号： G11C11/401 , G06F11/267 , G11C7/10 , G11C11/409 , G11C29/00 , G11C29/26 , G11C29/34 , G11C29/38
CPC分类号： G11C7/1057 , G11C29/26 , G11C29/38 , G11C7/10 , G11C7/1006 , G11C7/1051 , G11C7/1078 , G11C7/1084 , G06F11/267
摘要： A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switches are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected to one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.
摘要翻译：可以以正常模式和测试模式读取和写入的半导体存储器件被分成具有存储单元块的存储单元部分。数据总线连接到相应的块，并且交换连接到不同部分的块的数据总线。读取和写入时，开关在正常模式下和写入期间在测试模式下导通，并且在测试模式下读取期间不导通。在正常模式和测试模式下，输入数据被施加到连接到块之一的数据总线上，用于在写入期间同时在块中写入。在正常模式下，通过连接到上述一个块的数据总线，从这些部分的块中读出数据。在测试模式中，通过连接到相应块的数据总线，从这些部分的块中读出数据。

6. 发明授权

US4833518A Semiconductor memory device having improved interconnection structure of memory cell array 失效
标题翻译：具有改善的存储单元阵列的互连结构的半导体存储器件
公开(公告)号：US4833518A
公开(公告)日：1989-05-23
申请号：US094646
申请日：1987-09-09
申请人： Yoshio Matsuda , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Kiyohiro Furutani
发明人： Yoshio Matsuda , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Kiyohiro Furutani
IPC分类号： H01L27/10 , H01L21/8242 , H01L23/528 , H01L27/108 , H01L29/94
CPC分类号： H01L29/945 , H01L23/528 , H01L27/10805 , H01L27/10829 , H01L2924/0002 , Y10S257/922 , Y10S257/929
摘要： A memory cell array is divided into two groups, one bit line of a pair of bit lines is connected to corresponding memory cells in the first group of the memory cell array, and the other bit line thereof is connected to corresponding memory cells in the second group of the memory cell array.
摘要翻译：存储单元阵列被分成两组，一对位线的一个位线连接到存储单元阵列的第一组中的相应存储单元，而另一位与第二组中的相应存储单元连接组的存储单元阵列。

7. 发明授权

US5312494A High strength and high toughness aluminum alloy 失效
标题翻译：高强度高韧性铝合金
公开(公告)号：US5312494A
公开(公告)日：1994-05-17
申请号：US57071
申请日：1993-05-04
申请人： Hiroyuki Horimura , Noriaki Matsumoto , Kenji Okamoto
发明人： Hiroyuki Horimura , Noriaki Matsumoto , Kenji Okamoto
IPC分类号： C22C1/00 , C22C1/02 , C22C21/00 , C22C45/08
CPC分类号： C22C21/00 , C22C45/08
摘要： A high strength and high toughness aluminum alloy is produced by crystallization of one of two aluminum alloy blanks: one having a metallographic structure with a volume fraction Vf of a mixed-phase texture consisting of an amorphous phase and an aluminum crystalline phase being equal to or more than 50% (Vf.gtoreq.50%), and the other having a metallographic structure with a volume fraction Vf of an amorphous single-phase texture being equal to or more than 50% (Vf.gtoreq.50%). The aluminum alloy is represented by a chemical formula:Al.sub.(a) X.sub.(b) Z.sub.(c) Si.sub.(d)wherein X is at least one element selected from the group consisting of Mn, Fe, Co and Ni; Z is at least one element selected from the group consisting of Zr and Ti; and each of (a), (b), (c) and (d) is defined within the following range:84 atomic %.ltoreq.(a).ltoreq.94 atomic %,4 atomic %.ltoreq.(b).ltoreq.atomic %,0.6 atomic %.ltoreq.(c).ltoreq.4 atomic %, and0.5 atomic %.ltoreq.(d).ltoreq.(b)/3.Si is present in the form of at least one of a solute atom of an aluminum solid solution and a component element of an intermetallic compound.
摘要翻译：通过两种铝合金坯料之一的结晶生产高强度和高韧性的铝合金：一种具有由非晶相和铝结晶相组成的混合相织构的体积分数Vf的金相组织的金相组织，超过50％（Vf> / = 50％），另一种具有非晶单相织构的体积分数Vf的金相结构等于或大于50％（Vf> / = 50％）。铝合金由以下化学式表示：Al（a）X（b）Z（c）Si（d）其中X是选自Mn，Fe，Co和Ni中的至少一种元素; Z是选自Zr和Ti中的至少一种元素; （a），（b），（c）和（d）中的每一个定义在以下范围内：84原子％

8. 发明授权

US5308410A Process for producing high strength and high toughness aluminum alloy 失效
标题翻译：生产高强度高韧性铝合金的方法
公开(公告)号：US5308410A
公开(公告)日：1994-05-03
申请号：US896823
申请日：1992-06-11
申请人： Hiroyuki Horimura , Kenji Okamoto , Noriaki Matsumoto , Masao Ichikawa
发明人： Hiroyuki Horimura , Kenji Okamoto , Noriaki Matsumoto , Masao Ichikawa
IPC分类号： C22C21/00 , C22C45/08 , C22F1/04
CPC分类号： C22C21/00 , C22F1/04
摘要： A process for producing an aluminum alloy with high strength and toughness includes the steps of: preparing an alloy blank having a primary structure which is one selected from a single-phase structure comprised of a solid-solution phase, a single-phase structure comprised of an amorphous phase, and a mixed-phase structure comprised of a solid-solution phase and an amorphous phase, and subjecting the alloy blank to a thermal treatment to provide an aluminum alloy which has a secondary structure containing 20% or more by volume fraction Vf of chrysanthemum-like patterned phases each having a diameter of at most 5 .mu.m and comprising a solid-solution phase and an intermetallic compound phase arranged radiately.
摘要翻译：一种制造具有高强度和韧性的铝合金的方法包括以下步骤：制备具有一次结构的合金坯料，所述第一结构是从由固溶相组成的单相结构中选择的单相结构，单相结构由无定形相和由固相和非晶相组成的混合相结构，并对合金坯料进行热处理以提供具有二级结构的铝合金，该二次结构含有20体积％以上的体积分数Vf 的菊花样图案相，其直径最大为5μm，并且包括固溶相和金属间化合物相。

9. 发明授权

US5293598A Random access memory with a plurality of amplifier groups 失效
标题翻译：具有多个放大器组的随机存取存储器
公开(公告)号：US5293598A
公开(公告)日：1994-03-08
申请号：US912135
申请日：1992-07-09
申请人： Kiyohiro Furutani , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Yoshio Matsuda
发明人： Kiyohiro Furutani , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Yoshio Matsuda
IPC分类号： G06F11/267 , G11C7/10 , G11C29/26 , G11C29/38 , G06F13/40
CPC分类号： G11C7/10 , G11C29/26 , G11C29/38 , G11C7/1006 , G11C7/1051 , G11C7/1057 , G11C7/1078 , G11C7/1084 , G06F11/267
摘要： A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.
摘要翻译：可以以正常模式和测试模式读取和写入的半导体存储器件被分成具有存储单元块的存储单元部分。数据总线连接到相应的块，并且交换连接到不同部分的块的数据总线。在正常模式下读写时，在测试模式下写入期间开关导通，在测试模式下读取期间不导通。在正常模式和测试模式下，输入数据被加到连接在一个块上的数据总线上，以便在写入期间同时在这些块中写入。在正常模式下，通过连接到上述一个块的数据总线，从这些部分的块中读出数据。在测试模式中，通过连接到相应块的数据总线，从这些部分的块中读出数据。

10. 发明授权

US5022918A Heat-resistant aluminum alloy sinter and process for production of the same 失效
标题翻译：耐热铝合金烧结和生产过程相同
公开(公告)号：US5022918A
公开(公告)日：1991-06-11
申请号：US278581
申请日：1988-12-01
申请人： Seiichi Koike , Hiroyuki Horimura , Masao Ichikawa , Noriaki Matsumoto
发明人： Seiichi Koike , Hiroyuki Horimura , Masao Ichikawa , Noriaki Matsumoto
IPC分类号： C22C1/04 , C22C49/08
CPC分类号： C22C1/0416 , C22C49/08 , Y10T428/12035
摘要： A heat-resistant aluminum alloy sinter comprises 5 to 12% by weight of Cr, less than 10% by weight of at least one selected from the group consisting of Co, Ni, Mn, Zr, V, Ce, Fe, Ti, Mo, La, Nb, Y and Hf, and the balance of Al containing unavoidable impurities. A silicon carbide fiber is included for reinforcing the sinter in a fiber volume fraction range of 2 to 30%.

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