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    • 3. 发明授权
    • Optical element array, optical module, and optical transmission device
    • 光元件阵列,光模块和光传输装置
    • US07116854B2
    • 2006-10-03
    • US11045271
    • 2005-01-31
    • Tsuyoshi KanekoHajime Onishi
    • Tsuyoshi KanekoHajime Onishi
    • G02B6/12
    • B82Y20/00H01L27/153H01S5/0208H01S5/0224H01S5/02272H01S5/02284H01S5/0264H01S5/0425H01S5/18313H01S5/18388H01S5/2205H01S5/34326H01S5/34353H01S5/423H01S2304/00
    • To provide a optical element array in which a plurality of optical elements can be monolithically integrated, and each of the optical elements can be independently driven. A optical element array in accordance with the present invention includes a plurality of optical elements having light emitting sections formed above a substrate and photodetecting sections formed above the light emitting sections; and an element isolation section that is formed between the optical elements, for electrically isolating each of the optical element from the other, wherein the substrate is dielectric or semi-dielectric, the light emitting section includes a first semiconductor layer, an active layer, and a second semiconductor layer, the photodetecting section includes a first contact layer, a photoabsorption layer, and a second contact layer, the optical element has a first electrode that is electrically connected to the first semiconductor layer, and a second electrode that is electrically connected to the second semiconductor layer, the first electrodes are electrically isolated one from the other between the optical elements, and the second electrodes define a common electrode for driving the light emitting section and the photodetecting section.
    • 为了提供其中多个光学元件可以被单片集成的光学元件阵列,并且每个光学元件可以被独立地驱动。 根据本发明的光学元件阵列包括多个光学元件,其具有形成在基板上方的发光部分和形成在发光部分上方的光电检测部分; 以及元件隔离部分,其形成在所述光学元件之间,用于将所述光学元件中的每一个彼此电隔离,其中所述基板是电介质或半电介质,所述发光部分包括第一半导体层,有源层和 第二半导体层,受光部包括第一接触层,光吸收层和第二接触层,所述光学元件具有与第一半导体层电连接的第一电极和与第一半导体层电连接的第二电极, 第二半导体层,第一电极在光学元件之间彼此电隔离,并且第二电极限定用于驱动发光部和受光部的公共电极。
    • 6. 发明申请
    • Optical element array, optical module, and optical transmission device
    • 光元件阵列,光模块和光传输装置
    • US20050169571A1
    • 2005-08-04
    • US11045271
    • 2005-01-31
    • Tsuyoshi KanekoHajime Onishi
    • Tsuyoshi KanekoHajime Onishi
    • G02B6/12H01L27/15H01L31/12H01S5/02H01S5/026H01S5/042H01S5/183H01S5/22H01S5/343H01S5/42
    • B82Y20/00H01L27/153H01S5/0208H01S5/0224H01S5/02272H01S5/02284H01S5/0264H01S5/0425H01S5/18313H01S5/18388H01S5/2205H01S5/34326H01S5/34353H01S5/423H01S2304/00
    • To provide a optical element array in which a plurality of optical elements can be monolithically integrated, and each of the optical elements can be independently driven. A optical element array in accordance with the present invention includes a plurality of optical elements having light emitting sections formed above a substrate and photodetecting sections formed above the light emitting sections; and an element isolation section that is formed between the optical elements, for electrically isolating each of the optical element from the other, wherein the substrate is dielectric or semi-dielectric, the light emitting section includes a first semiconductor layer, an active layer, and a second semiconductor layer, the photodetecting section includes a first contact layer, a photoabsorption layer, and a second contact layer, the optical element has a first electrode that is electrically connected to the first semiconductor layer, and a second electrode that is electrically connected to the second semiconductor layer, the first electrodes are electrically isolated one from the other between the optical elements, and the second electrodes define a common electrode for driving the light emitting section and the photodetecting section.
    • 为了提供其中多个光学元件可以被单片集成的光学元件阵列,并且每个光学元件可以被独立地驱动。 根据本发明的光学元件阵列包括多个光学元件,其具有形成在基板上方的发光部分和形成在发光部分上方的光电检测部分; 以及元件隔离部分,其形成在所述光学元件之间,用于将所述光学元件中的每一个彼此电隔离,其中所述基板是电介质或半电介质,所述发光部分包括第一半导体层,有源层和 第二半导体层,受光部包括第一接触层,光吸收层和第二接触层,所述光学元件具有与第一半导体层电连接的第一电极和与第一半导体层电连接的第二电极, 第二半导体层,第一电极在光学元件之间彼此电隔离,并且第二电极限定用于驱动发光部和受光部的公共电极。
    • 7. 发明申请
    • Photodetectors, optical modules, and optical transmission devices
    • 光检测器,光模块和光传输设备
    • US20050145779A1
    • 2005-07-07
    • US10976767
    • 2004-11-01
    • Masamitsu MochizukiTomoko KoyamaHajime Onishi
    • Masamitsu MochizukiTomoko KoyamaHajime Onishi
    • H01L31/00H01L31/0216H01L31/108
    • H01L31/1085H01L31/02162
    • A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.
    • 提供一种提供能够以相对简单的结构提高光接收灵敏度并且可以保持高速响应性的光电检测器的方法。 一种具有MSM(金属 - 半导体 - 金属)结构的光电检测器,包括基板,设置在基板上并包括低折射率层和高折射率层的多层膜,其以单位周期交替层叠。 低折射率层和高折射率层中的至少一个是由半导体构成的光吸收层和嵌入多层膜中的部分,该多层膜中具有至少一对相对电极的部分。 形成多层膜,使得对应于光子带的带边缘的波长区域与光吸收层的吸收带的至少一部分重叠,从而延迟具有预定波长的组入射光Pin的属性 光吸收层的吸收带。
    • 9. 发明授权
    • Surface-emitting type device and its manufacturing method
    • 表面发射型器件及其制造方法
    • US07521721B2
    • 2009-04-21
    • US11344227
    • 2006-02-01
    • Hajime OnishiTetsuo Nishida
    • Hajime OnishiTetsuo Nishida
    • H01L27/15
    • H01S5/0261H01L27/15H01S5/0207H01S5/0425H01S5/06226H01S5/06825H01S5/18311H01S5/18338H01S5/3081H01S2301/176
    • A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, an emission section formed above the first face, and a rectification section formed above the second face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type, and a second semiconductor layer of the first conductivity type formed above the first semiconductor layer, the first semiconductor layer of the emission section and the first semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.
    • 表面发射型器件包括:衬底,其包括相对于第一面倾斜的第一面和第二面,并且具有与第一面的平面折射率不同的平面折射率;形成在第一面上方的发射部, 以及形成在所述第二面以上的整流部,其特征在于,所述发光部包括第一导电型的第一半导体层,形成在所述第一半导体层的上方的有源层,以及形成在所述有源层的上方的第二导电型的第二半导体层 整流部包括第二导电型的第一半导体层和形成在第一半导体层的上方的第一导电型的第二半导体层,发光部的第一半导体层和整流部的第一半导体层为 通过共同的方法形成,并且包括相同的杂质,发射部分和整流部分 彼此并联地电连接,并且整流部分相对于发射部分具有相反方向的整流作用。
    • 10. 发明授权
    • Surface-emitting type device and its manufacturing method
    • 表面发射型器件及其制造方法
    • US07326965B2
    • 2008-02-05
    • US11344192
    • 2006-02-01
    • Hajime OnishiTetsuo Nishida
    • Hajime OnishiTetsuo Nishida
    • H01L27/15
    • H01S5/18311H01S5/0207H01S5/0261H01S5/0425H01S5/06825H01S5/18338H01S2301/176
    • A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second face and has a plane index equal to the plane index of the first face, an emission section formed above the first face, and a rectification section formed above each of the second face and the third face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type formed above the second face, and a second semiconductor layer of the first conductivity type formed continuously with the first semiconductor layer above the third face, at least a portion of the first semiconductor layer of the emission section, the first semiconductor layer of the rectification section, and the second semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.
    • 表面发射型器件包括:衬底,其包括第一面,相对于第一面倾斜的第二面,具有与第一面的平面折射率不同的平面折射率,以及相对于第一面倾斜的第三面 并且具有与第一面的平面折射率相等的平面折射率,形成在第一面的上方的发光部,以及形成在第二面和第三面的上方的整流部,其中,发光部包括: 第一导电类型的第一半导体层,形成在第一半导体层之上的有源层和形成在有源层上的第二导电类型的第二半导体层,整流部分包括上述形成的第二导电类型的第一半导体层 所述第二面和所述第一导电类型的第二半导体层与所述第三面上方的所述第一半导体层连续形成,至少为 发光部分的第一半导体层,整流部分的第一半导体层和整流部分的第二半导体层通过共同的工艺形成,并且包括相同的杂质,发光部分和整流部分是电气的 并联连接,并且整流部分相对于发射部分具有相反方向的整流作用。