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1. 发明申请

US20050145779A1 Photodetectors, optical modules, and optical transmission devices 失效
标题翻译：光检测器，光模块和光传输设备
公开(公告)号：US20050145779A1
公开(公告)日：2005-07-07
申请号：US10976767
申请日：2004-11-01
申请人： Masamitsu Mochizuki , Tomoko Koyama , Hajime Onishi
发明人： Masamitsu Mochizuki , Tomoko Koyama , Hajime Onishi
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/108
CPC分类号： H01L31/1085 , H01L31/02162
摘要： A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.
摘要翻译：提供一种提供能够以相对简单的结构提高光接收灵敏度并且可以保持高速响应性的光电检测器的方法。一种具有MSM（金属 - 半导体 - 金属）结构的光电检测器，包括基板，设置在基板上并包括低折射率层和高折射率层的多层膜，其以单位周期交替层叠。低折射率层和高折射率层中的至少一个是由半导体构成的光吸收层和嵌入多层膜中的部分，该多层膜中具有至少一对相对电极的部分。形成多层膜，使得对应于光子带的带边缘的波长区域与光吸收层的吸收带的至少一部分重叠，从而延迟具有预定波长的组入射光Pin的属性光吸收层的吸收带。

2. 发明授权

US07659592B2 Optical element, optical module and method for manufacturing the same 有权
标题翻译：光学元件，光学模块及其制造方法
公开(公告)号：US07659592B2
公开(公告)日：2010-02-09
申请号：US11457558
申请日：2006-07-14
申请人： Hajime Onishi , Masamitsu Mochizuki
发明人： Hajime Onishi , Masamitsu Mochizuki
IPC分类号： H01L23/48 , H01S5/026
CPC分类号： H01S5/18311 , H01S5/02288 , H01S5/0264 , H01S5/0425 , H01S5/209 , H01S2301/18
摘要： A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.
摘要翻译：一种用于制造具有表面发射型半导体激光器的光学元件和检测从表面发射型半导体激光器发射的光的光电检测器元件的方法，所述方法包括以下步骤：（a）在基板上层叠半导体层用于形成第一反射镜，有源层，第二反射镜，光吸收层，蚀刻停止层和接触层; （b）图案化所述半导体层以至少形成光吸收层，蚀刻停止层和接触层; （c）在接触层上方形成电极; 和（d）蚀刻接触层的一部分直到暴露出蚀刻阻挡层的上表面。

3. 发明授权

US07129469B2 Photodetectors, optical modules, and optical transmission devices 失效
标题翻译：光检测器，光模块和光传输设备
公开(公告)号：US07129469B2
公开(公告)日：2006-10-31
申请号：US10976767
申请日：2004-11-01
申请人： Masamitsu Mochizuki , Tomoko Koyama , Hajime Onishi
发明人： Masamitsu Mochizuki , Tomoko Koyama , Hajime Onishi
IPC分类号： G06F1/03 , G06F1/07
CPC分类号： H01L31/1085 , H01L31/02162
摘要： A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.
摘要翻译：提供一种提供能够以相对简单的结构提高光接收灵敏度并且可以保持高速响应性的光电检测器的方法。一种具有MSM（金属 - 半导体 - 金属）结构的光电检测器，包括基板，设置在基板上并包括低折射率层和高折射率层的多层膜，其以单位周期交替层叠。低折射率层和高折射率层中的至少一个是由半导体构成的光吸收层和嵌入多层膜中的部分，该多层膜中具有至少一对相对电极的部分。形成多层膜，使得对应于光子带的带边缘的波长区域与光吸收层的吸收带的至少一部分重叠，从而延迟具有预定波长的组入射光Pin的属性光吸收层的吸收带。

4. 发明申请

US20070058909A1 Light-receiving element, manufacturing method for the same, optical module, and optical transmitting device 有权
标题翻译：光接收元件，其制造方法，光学模块和光发送装置
公开(公告)号：US20070058909A1
公开(公告)日：2007-03-15
申请号：US11593487
申请日：2006-11-07
申请人： Tsuyoshi Kaneko , Hajime Onishi
发明人： Tsuyoshi Kaneko , Hajime Onishi
IPC分类号： G02B6/36
CPC分类号： H01L31/02161 , G02B6/4206 , G02B6/4214 , H01L31/02325 , H01L33/58 , H01L2224/05001 , H01L2224/05026 , H01L2224/0508 , H01L2224/05571 , H01L2224/13 , H01L2924/00014 , H01L2224/05599 , H01L2224/05099
摘要： To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a base member provided over a light-receiving surface, and an optical element provided on a top surface of the base member.
摘要翻译：为了提供能够进行高速运转的受光元件，具有受控设定位置，形状和尺寸的光学元件，光接收元件的制造方法以及光学模块和光发送器件，包括光接收元件，光接收元件包括设置在光接收表面上的基底元件和设置在基底元件的顶表面上的光学元件。

5. 发明授权

US07116854B2 Optical element array, optical module, and optical transmission device 有权
标题翻译：光元件阵列，光模块和光传输装置
公开(公告)号：US07116854B2
公开(公告)日：2006-10-03
申请号：US11045271
申请日：2005-01-31
申请人： Tsuyoshi Kaneko , Hajime Onishi
发明人： Tsuyoshi Kaneko , Hajime Onishi
IPC分类号： G02B6/12
CPC分类号： B82Y20/00 , H01L27/153 , H01S5/0208 , H01S5/0224 , H01S5/02272 , H01S5/02284 , H01S5/0264 , H01S5/0425 , H01S5/18313 , H01S5/18388 , H01S5/2205 , H01S5/34326 , H01S5/34353 , H01S5/423 , H01S2304/00
摘要： To provide a optical element array in which a plurality of optical elements can be monolithically integrated, and each of the optical elements can be independently driven. A optical element array in accordance with the present invention includes a plurality of optical elements having light emitting sections formed above a substrate and photodetecting sections formed above the light emitting sections; and an element isolation section that is formed between the optical elements, for electrically isolating each of the optical element from the other, wherein the substrate is dielectric or semi-dielectric, the light emitting section includes a first semiconductor layer, an active layer, and a second semiconductor layer, the photodetecting section includes a first contact layer, a photoabsorption layer, and a second contact layer, the optical element has a first electrode that is electrically connected to the first semiconductor layer, and a second electrode that is electrically connected to the second semiconductor layer, the first electrodes are electrically isolated one from the other between the optical elements, and the second electrodes define a common electrode for driving the light emitting section and the photodetecting section.
摘要翻译：为了提供其中多个光学元件可以被单片集成的光学元件阵列，并且每个光学元件可以被独立地驱动。根据本发明的光学元件阵列包括多个光学元件，其具有形成在基板上方的发光部分和形成在发光部分上方的光电检测部分; 以及元件隔离部分，其形成在所述光学元件之间，用于将所述光学元件中的每一个彼此电隔离，其中所述基板是电介质或半电介质，所述发光部分包括第一半导体层，有源层和第二半导体层，受光部包括第一接触层，光吸收层和第二接触层，所述光学元件具有与第一半导体层电连接的第一电极和与第一半导体层电连接的第二电极，第二半导体层，第一电极在光学元件之间彼此电隔离，并且第二电极限定用于驱动发光部和受光部的公共电极。

6. 发明授权

US07521721B2 Surface-emitting type device and its manufacturing method 有权
标题翻译：表面发射型器件及其制造方法
公开(公告)号：US07521721B2
公开(公告)日：2009-04-21
申请号：US11344227
申请日：2006-02-01
申请人： Hajime Onishi , Tetsuo Nishida
发明人： Hajime Onishi , Tetsuo Nishida
IPC分类号： H01L27/15
CPC分类号： H01S5/0261 , H01L27/15 , H01S5/0207 , H01S5/0425 , H01S5/06226 , H01S5/06825 , H01S5/18311 , H01S5/18338 , H01S5/3081 , H01S2301/176
摘要： A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, an emission section formed above the first face, and a rectification section formed above the second face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type, and a second semiconductor layer of the first conductivity type formed above the first semiconductor layer, the first semiconductor layer of the emission section and the first semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.
摘要翻译：表面发射型器件包括：衬底，其包括相对于第一面倾斜的第一面和第二面，并且具有与第一面的平面折射率不同的平面折射率;形成在第一面上方的发射部，以及形成在所述第二面以上的整流部，其特征在于，所述发光部包括第一导电型的第一半导体层，形成在所述第一半导体层的上方的有源层，以及形成在所述有源层的上方的第二导电型的第二半导体层整流部包括第二导电型的第一半导体层和形成在第一半导体层的上方的第一导电型的第二半导体层，发光部的第一半导体层和整流部的第一半导体层为通过共同的方法形成，并且包括相同的杂质，发射部分和整流部分彼此并联地电连接，并且整流部分相对于发射部分具有相反方向的整流作用。

7. 发明授权

US07326965B2 Surface-emitting type device and its manufacturing method 有权
标题翻译：表面发射型器件及其制造方法
公开(公告)号：US07326965B2
公开(公告)日：2008-02-05
申请号：US11344192
申请日：2006-02-01
申请人： Hajime Onishi , Tetsuo Nishida
发明人： Hajime Onishi , Tetsuo Nishida
IPC分类号： H01L27/15
CPC分类号： H01S5/18311 , H01S5/0207 , H01S5/0261 , H01S5/0425 , H01S5/06825 , H01S5/18338 , H01S2301/176
摘要： A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second face and has a plane index equal to the plane index of the first face, an emission section formed above the first face, and a rectification section formed above each of the second face and the third face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type formed above the second face, and a second semiconductor layer of the first conductivity type formed continuously with the first semiconductor layer above the third face, at least a portion of the first semiconductor layer of the emission section, the first semiconductor layer of the rectification section, and the second semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.
摘要翻译：表面发射型器件包括：衬底，其包括第一面，相对于第一面倾斜的第二面，具有与第一面的平面折射率不同的平面折射率，以及相对于第一面倾斜的第三面并且具有与第一面的平面折射率相等的平面折射率，形成在第一面的上方的发光部，以及形成在第二面和第三面的上方的整流部，其中，发光部包括：第一导电类型的第一半导体层，形成在第一半导体层之上的有源层和形成在有源层上的第二导电类型的第二半导体层，整流部分包括上述形成的第二导电类型的第一半导体层所述第二面和所述第一导电类型的第二半导体层与所述第三面上方的所述第一半导体层连续形成，至少为发光部分的第一半导体层，整流部分的第一半导体层和整流部分的第二半导体层通过共同的工艺形成，并且包括相同的杂质，发光部分和整流部分是电气的并联连接，并且整流部分相对于发射部分具有相反方向的整流作用。

8. 发明授权

US07150568B2 Light-receiving element, manufacturing method for the same, optical module, and optical transmitting device 有权
公开(公告)号：US07150568B2
公开(公告)日：2006-12-19
申请号：US10761274
申请日：2004-01-22
申请人： Tsuyoshi Kaneko , Hajime Onishi
发明人： Tsuyoshi Kaneko , Hajime Onishi
IPC分类号： G02B6/36
CPC分类号： H01L31/02161 , G02B6/4206 , G02B6/4214 , H01L31/02325 , H01L33/58 , H01L2224/05001 , H01L2224/05026 , H01L2224/0508 , H01L2224/05571 , H01L2224/13 , H01L2924/00014 , H01L2224/05599 , H01L2224/05099
摘要： To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a base member provided over a light-receiving surface, and an optical element provided on a top surface of the base member.

9. 发明授权

US07365368B2 Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers 有权
标题翻译：表面发射型晶片及其制造方法以及表面发射型晶片的老化方法
公开(公告)号：US07365368B2
公开(公告)日：2008-04-29
申请号：US11189834
申请日：2005-07-27
申请人： Tetsuo Nishida , Hajime Onishi
发明人： Tetsuo Nishida , Hajime Onishi
IPC分类号： H01L29/205
CPC分类号： H01L27/156 , H01L27/15
摘要： To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.
摘要翻译：为了简化老化过程并降低其表面发射型晶片的成本及其制造方法以及用于表面发射型晶片的老化方法。表面发射型晶片包括基板10和形成在基板10上方的多个表面发射型元件1。每个表面发射型元件1包括发光元件部分20，用于驱动发光元件部分20的第一和第二电极30,32以及整流元件部分40。整流元件部分40并联连接在第一和第二电极30,32之间，并且相对于发光元件部分20具有相反方向的整流作用。多个表面发射型元件1沿着各个发光元件部分20的正交方向彼此重合的方向串联连接。

10. 发明申请

US20070238208A1 OPTICAL DEVICE AND METHOD FOR MANUFACTURING OPTICAL DEVICE 有权
标题翻译：光学装置及制造光学装置的方法
公开(公告)号：US20070238208A1
公开(公告)日：2007-10-11
申请号：US11696219
申请日：2007-04-04
申请人： Tetsuo Nishida , Hajime Onishi
发明人： Tetsuo Nishida , Hajime Onishi
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0021 , H01S5/0261 , H01S5/06825 , H01S5/18311
摘要： A method for manufacturing an optical device, the method comprising the steps of: (a) laminating, above a substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer that functions as an active layer, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer composed of a material having a greater etching rate than the third semiconductor layer, a fifth semiconductor layer that functions as a capacitance reducing section, and a sixth semiconductor layer of the first conductivity type; (b) patterning at least the third, fourth, fifth and sixth semiconductor layers, thereby forming a light emitting device section including a first semiconductor section of the first conductivity type, a second semiconductor section that functions as an active layer and a third semiconductor section of the second conductivity type which are disposed over the substrate in this order from a side of the substrate, and a rectification device section including a fourth semiconductor section of the second conductivity type, a fifth semiconductor section composed of a material having a greater etching rate than the fourth semiconductor section, a capacitance reducing section and a sixth semiconductor section of the first conductivity type; (c) forming first and second electrodes for driving the light emitting device section; and (d) connecting the fourth and sixth semiconductor sections between the first and second electrodes in parallel with the light emitting device section so as to have a rectification action in a reverse direction with respect to the light emitting device section, wherein the step (b) includes conducting etching until a portion of a top surface of the third semiconductor layer is exposed.
摘要翻译：一种光学器件的制造方法，其特征在于，包括以下工序：（a）在基板的上方层叠第一导电型的第一半导体层，作为有源层的第二半导体层，第三半导体层第二导电类型，由蚀刻速率高于第三半导体层的材料构成的第四半导体层，用作电容减小部的第五半导体层和第一导电型的第六半导体层; （b）至少构图第三，第四，第五和第六半导体层，从而形成发光器件部分，其包括第一导电类型的第一半导体部分，用作有源层的第二半导体部分和第三半导体部分所述第二导电类型从所述基板的一侧依次设置在所述基板上;以及整流装置部，所述整流装置部包括具有所述第二导电型的第四半导体部，由具有较大蚀刻速率的材料构成的第五半导体部比第四半导体部分，电容减小部分和第一导电类型的第六半导体部分; （c）形成用于驱动发光器件部分的第一和第二电极; 以及（d）将第一和第二电极之间的第四和第六半导体部分与发光器件部分并联连接，以便相对于发光器件部分具有相反方向的整流作用，其中步骤（b ）包括进行蚀刻，直到暴露第三半导体层的顶表面的一部分。

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