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1. 发明授权

US06358119B1 Way to remove CU line damage after CU CMP 有权
标题翻译：在CU CMP之后删除CU线损坏的方法
公开(公告)号：US06358119B1
公开(公告)日：2002-03-19
申请号：US09336808
申请日：1999-06-21
申请人： Tsu Shih , Jih-Churng Twu , Ying-Ho Chen , Syun-Ming Jang
发明人： Tsu Shih , Jih-Churng Twu , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B100
CPC分类号： B24B37/12 , B24B37/015 , B24B55/02
摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
摘要翻译：本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

2. 发明授权

US6153526A Method to remove residue in wolfram CMP 有权
标题翻译：去除残留物的方法
公开(公告)号：US6153526A
公开(公告)日：2000-11-28
申请号：US320758
申请日：1999-05-27
申请人： Tsu Shih , Jih-Churng Twu
发明人： Tsu Shih , Jih-Churng Twu
IPC分类号： H01L21/3105 , H01L21/321 , H01L21/00
CPC分类号： H01L21/31053 , H01L21/3212
摘要： A new method for removing particle residue from the surface of semiconductor wafers that contain wolfram plugs. A series of polishing and buffing steps is performed; the first of this is a wolfram CMP using a hard polishing pad. An oxide buffing operation is further performed on the wafer surface; a soft pad is used for this buffing operation. The buffing operation is followed by a wolfram CMP that is applied for a short period of time using a soft polishing pad thereby removing the protruding top of the wolfram plug and the oxide particles from the vicinity of the wolfram plugs.
摘要翻译：一种从包含钨丝塞的半导体晶片表面去除颗粒残留物的新方法。进行一系列抛光和抛光步骤; 第一个是使用硬抛光垫的钨粉CMP。在晶片表面上进一步进行氧化物抛光操作; 一个软垫用于这种抛光操作。抛光操作之后是使用软抛光垫施加短时间的钨粉CMP，从而从钨粉塞附近除去钨骨塞的突出顶部和氧化物颗粒。

3. 发明授权

US06228760B1 Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish 有权
标题翻译：使用PE-SiON或PE-OXIDE进行接触或通过照相和氧化物和W化学机械抛光的缺陷还原
公开(公告)号：US06228760B1
公开(公告)日：2001-05-08
申请号：US09263563
申请日：1999-03-08
申请人： Chen-Hua Yu , Syun-Ming Jang , Tsu Shih , Anthony Yen , Jih-Churng Twu
发明人： Chen-Hua Yu , Syun-Ming Jang , Tsu Shih , Anthony Yen , Jih-Churng Twu
IPC分类号： H01L214763
CPC分类号： H01L21/0276 , H01L21/31144 , H01L21/3144 , H01L21/3145 , H01L21/7684 , Y10S438/97
摘要： A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a di electric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.
摘要翻译：在化学机械抛光介电层平坦化工艺之后和用于接触的导电层的化学机械抛光之前，在二电层上形成保护性（SiON或PE-Ox）电介质抗反射涂层（DARC）的方法或通过插塞形成。电介质层被化学机械抛光，从而在电介质层中形成微细结构。本发明的保护性SiON或PE-OX DARC层形成在电介质层上，由此保护性SiON或PE-OX DARC层填充在微细凹槽中。在其保护层和电介质层中蚀刻第一开口。导电层形成在保护层上并填充第一开口。导电层被化学机械抛光以从保护层上方移除导电层并形成填充第一开口的互连。使用保护性SiON或PE-OX DARC层作为CMP阻挡层，从而防止电介质层中的微细纹。

4. 发明授权

US06589872B1 Use of low-high slurry flow to eliminate copper line damages 有权
标题翻译：使用低 - 高泥浆流量来消除铜线损坏
公开(公告)号：US06589872B1
公开(公告)日：2003-07-08
申请号：US09304302
申请日：1999-05-03
申请人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
发明人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
IPC分类号： H01K2120
CPC分类号： B24B37/042 , B24B49/00 , B24B57/02
摘要： The invention teaches a new method of applying slurry during the process of chemical mechanical polishing of copper surfaces. By varying the rate of slurry deposition, starting out with a low rate of slurry flow that is increased as the polishing process proceeds, the invention obtains good planarity for copper surfaces while saving on the amount of slurry that is being used for the copper surface polishing process.
摘要翻译：本发明教导了在铜表面的化学机械抛光过程中施加浆料的新方法。通过改变浆料沉积速率，随着抛光工艺的进行，随着浆料流动速度的降低而开始，本发明对于铜表面获得了良好的平面性，同时节省了用于铜表面抛光的浆料量处理。

5. 发明授权

US06429118B1 Elimination of electrochemical deposition copper line damage for damascene processing 有权
标题翻译：消除电化学沉积铜线损坏镶嵌加工
公开(公告)号：US06429118B1
公开(公告)日：2002-08-06
申请号：US09664414
申请日：2000-09-18
申请人： Ying-Ho Chen , Syun-Ming Jang , Jih-Churng Twu , Tsu Shih
发明人： Ying-Ho Chen , Syun-Ming Jang , Jih-Churng Twu , Tsu Shih
IPC分类号： H01L213213
CPC分类号： H01L21/76802 , H01L21/2855 , H01L21/7684 , H01L21/76877
摘要： An improved and new process, used for the elimination of copper line damage in damacene processing, is disclosed. By depositing copper by physical vapor deposition (PVD), sputtering, preferably by an ion metal plasma (IMP) scheme or chemical vapor deposition (CVD), the deposited copper fills pinholes or intra-cracks (micro-cracks), caused by poor gap filling of purely electrochemical deposition of copper plating. By this process or method, chemical attack on copper lines, by chemicals in the subsequent chemical mechanical polish (CMP) back and post-cleaning steps, is prevented.
摘要翻译：公开了一种改进和新的方法，用于消除碲化氢处理中的铜线损伤。通过物理气相沉积（PVD），优选通过离子金属等离子体（IMP）方案或化学气相沉积（CVD）沉积铜，沉积的铜填充由差的间隙引起的针孔或裂纹（微裂纹）填充电镀纯电化学沉积。通过该方法或方法，可以防止化学品在后续的化学机械抛光（CMP）背面和后清洗步骤中对铜线进行化学侵蚀。

6. 发明授权

US06391780B1 Method to prevent copper CMP dishing 有权
标题翻译：防止铜CMP凹陷的方法
公开(公告)号：US06391780B1
公开(公告)日：2002-05-21
申请号：US09378949
申请日：1999-08-23
申请人： Tsu Shih , Ying-Ho Chen , Jih-Churng Twu
发明人： Tsu Shih , Ying-Ho Chen , Jih-Churng Twu
IPC分类号： H01L21302
CPC分类号： H01L21/3212
摘要： A process for manufacturing damascene wiring in integrated circuits is described. Trenches in the top most layer are first over-filled with a soft metal (such as copper) and then a relatively thin layer of a hard material such as tantalum, tantalum nitride, titanium, titanium nitride etc is deposited on the copper surface Under a first set of control conditions CMP is then applied for just long enough to selectively remove this hard material layer from peaks in the copper surface while leaving it intact in the valleys. The control conditions for CMP are then adjusted so that CMP can proceed with material at the peaks being removed at a significantly faster rate than in the valleys. Thus, when the point is reached that all copper outside the trenches has been removed, the trenches are found to be just filled with a flat layer that has no dishing.
摘要翻译：描述了在集成电路中制造镶嵌线的工艺。首先用软金属（例如铜）填充最顶层的沟槽，然后在铜表面上沉积相对薄的硬质材料如钽，氮化钽，钛，氮化钛等层第一组控制条件CMP然后施加足够长的时间以从铜表面的峰中选择性地去除该硬质材料层，同时将其完整地留在谷中。然后调整CMP的控制条件，使得CMP可以以比在谷中明显更快的速率除去峰值处的材料继续进行。因此，当达到沟槽外部的所有铜已经被去除的地方时，发现沟槽刚好填充有没有凹陷的平坦层。

7. 发明授权

US6080656A Method for forming a self-aligned copper structure with improved planarity 有权
标题翻译：用于形成具有改善的平面度的自对准铜结构的方法
公开(公告)号：US6080656A
公开(公告)日：2000-06-27
申请号：US387436
申请日：1999-09-01
申请人： Tsu Shih , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
发明人： Tsu Shih , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/7684 , H01L21/76879
摘要： A method for forming a copper structure with reduced dishing, using a self-aligned copper electroplating process. The process begins by providing a semiconductor structure having a dielectric layer thereover, wherein the dielectric layer has a trench therein. A barrier layer is formed over the dielectric layer, a seed layer is formed on the barrier layer, and an insulating layer is formed on the seed layer. The insulating layer is patterned so as to expose the seed layer on the bottom and sidewalls of the trench, preferably using the trench photo mask. A copper layer is selectively electroplated onto the exposed seed layer on the bottom and sidewalls of the trench, while the insulating layer prevents copper deposition outside of the trench. The copper layer, the insulating layer, and the seed layer are planarized, stopping at the dielectric layer. Because of the self-aligned copper geometry, the copper suffers reduced dishing.
摘要翻译：一种使用自对准铜电镀工艺形成具有减少凹陷的铜结构的方法。该过程开始于提供其上具有介电层的半导体结构，其中介电层在其中具有沟槽。在电介质层上形成阻挡层，在阻挡层上形成种子层，在籽晶层上形成绝缘层。图案化绝缘层，以便优选地使用沟槽光掩模来暴露沟槽的底部和侧壁上的晶种层。选择性地将铜层电镀到沟槽的底部和侧壁上的暴露种子层上，同时绝缘层防止在该沟槽外部的铜沉积。铜层，绝缘层和种子层被平坦化，停留在电介质层。由于自对准的铜几何形状，铜损坏了凹陷。

8. 发明授权

US06620725B1 Reduction of Cu line damage by two-step CMP 有权
标题翻译：通过两步CMP减少Cu线损伤
公开(公告)号：US06620725B1
公开(公告)日：2003-09-16
申请号：US09395287
申请日：1999-09-13
申请人： Shau-Lin Shue , Ming-Hsing Tsai , Wen-Jye Tsai , Ying-Ho Chen , Tsu Shih , Jih-Churng Twu , Syun-Ming Jang
发明人： Shau-Lin Shue , Ming-Hsing Tsai , Wen-Jye Tsai , Ying-Ho Chen , Tsu Shih , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A process for performing CMP in two steps is described. After trenches have been formed and over-filled with copper, in a first embodiment of the invention a hard pad is used initially to remove most of the copper until a point is reached where dishing effects would begin to appear. A soft pad is then substituted and CMP continued until all copper has been removed, except in the trenches. In a second embodiment, CMP is initiated using a pad to which high-pressure is applied and which rotates relatively slowly. As before, this combination is used until the point is reached where dishing effects would begin to appear. Then, relatively low pressure in combination with relatively high rotational speed is used until all copper has been removed, except in the trenches. Both of these embodiments result in trenches which are just-filled with copper, with little or no dishing effects, and with all traces of copper removed everywhere except in the trenches themselves.
摘要翻译：描述用于在两个步骤中执行CMP的过程。在沟槽已经形成并且用铜过度填充之后，在本发明的第一实施例中，最初使用硬焊盘去除大部分铜，直到达到一个点，其中凹陷效应将开始出现。然后取代软焊盘，继续CMP直到除了沟槽中除去所有的铜。在第二实施例中，使用施加高压并且相对缓慢地旋转的衬垫来启动CMP。如前所述，使用这种组合，直到达到点，其中凹陷效应将开始出现。然后，除了沟槽之外，使用相对较低的压力结合相对高的转速直到除去所有的铜。这两个实施例都导致刚好填充铜的沟槽，几乎没有凹陷效应，并且除了沟槽本身之外，所有痕迹的铜都被去除。

9. 发明授权

US06417106B1 Underlayer liner for copper damascene in low k dielectric 有权
标题翻译：低k电介质中铜镶嵌层的底层衬垫
公开(公告)号：US06417106B1
公开(公告)日：2002-07-09
申请号：US09431150
申请日：1999-11-01
申请人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
发明人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
IPC分类号： H01L21302
CPC分类号： H01L21/7684 , H01L21/76829
摘要： A process for reducing dishing in damascene structures formed in low k organic dielectrics is described. A key feature is the insertion of a liner layer between the low k dielectric layer and the etch stop layer. The only requirement for the liner material is that it should have different etching characteristics from the etch stop material so that when trenches are etched in the dielectric they extend as far as the etch stop layer, in the normal way. When this is done it is found that dishing, after CMP, is significantly reduced, particularly for trench structures made up of multiple narrow trenches spaced close together.
摘要翻译：描述了一种用于减少在低k有机电介质中形成的镶嵌结构中的凹陷的方法。一个关键特征是在低k电介质层和蚀刻停止层之间插入衬里层。衬垫材料的唯一要求是它应该具有与蚀刻停止材料不同的蚀刻特性，使得当在电介质中蚀刻沟槽时，它们以正常方式延伸到蚀刻停止层的最远处。当这样做时，发现在CMP之后的凹陷显着减少，特别是对于由几个间隔得很近的窄沟槽组成的沟槽结构。

10. 发明授权

US06227947B1 Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer 有权
标题翻译：在半导体晶片上化学机械研磨金属的装置和方法
公开(公告)号：US06227947B1
公开(公告)日：2001-05-08
申请号：US09366231
申请日：1999-08-03
申请人： Tien-Chen Hu , Jih-Churng Twu , Ying-Ho Chen , Tsu Shih
发明人： Tien-Chen Hu , Jih-Churng Twu , Ying-Ho Chen , Tsu Shih
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B53/013
摘要： An apparatus and a method for chemical mechanical polishing a metal on a semiconductor wafer capable of achieving improved pad life are disclosed. In the apparatus, in addition to a first spray nozzle used for spraying a slurry solution onto the top of a polishing pad, a second spray nozzle is provided for mounting juxtaposed to a conditioning pad for dispensing a cleaning solution capable of dissolving polishing debris formed on the polishing pad surface. The apparatus may further include at least one cleaning solution reservoir for storing and delivering a cleaning solution to the second spray nozzle. The method can be advantageously carried out in two-steps during which a first cleaning solution is sprayed onto the pad surface for dissolving the polishing debris, and then a second cleaning solution is sprayed onto the pad surface for removing or flushing away the dissolved debris. In one illustration for the removal of oxides of copper, an acid-containing or ammonium hydroxide-containing cleaning solution is used advantageously to dissolve the oxides, and then deionized water is used to remove the dissolved debris from the pad surface.
摘要翻译：公开了一种用于化学机械抛光半导体晶片上的能够实现改善的焊盘寿命的装置和方法。在该装置中，除了用于将浆液溶液喷洒到抛光垫的顶部上的第一喷嘴之外，还提供了第二喷嘴，用于与调节垫并置安装，用于分配能够溶解在抛光垫表面。该设备还可以包括至少一个清洁溶液储存器，用于将清洁溶液存储并输送到第二喷嘴。该方法可以有利地在两个步骤中进行，在此期间将第一清洁溶液喷涂到垫表面上用于溶解抛光碎片，然后将第二清洁溶液喷涂到垫表面上以除去或冲洗掉溶解的碎屑。在一个说明中，为了去除铜的氧化物，含有酸或氢氧化铵的清洗溶液有利地用于溶解氧化物，然后使用去离子水从衬垫表面去除溶解的碎屑。

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