会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明授权
    • Container capacitor structure and method of formation thereof
    • 集装箱电容器结构及其形成方法
    • US08124491B2
    • 2012-02-28
    • US12547197
    • 2009-08-25
    • D. Mark DurcanTrung T. DoanRoger R. LeeFernando Gonzalez
    • D. Mark DurcanTrung T. DoanRoger R. LeeFernando Gonzalez
    • H01L21/8242
    • H01L28/91H01L27/10811H01L27/10817H01L27/10852H01L27/10888H01L28/65Y10S257/905
    • Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
    • 公开了一种容器电容器结构及其构造方法。 蚀刻掩模和蚀刻用于暴露容器电容器结构的电极(“底部电极”)的外部表面的部分。 蚀刻在容器电容器结构的近端对之间提供凹槽,该凹槽可用于形成额外的电容。 因此,电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。 有利地,仅使用内表面增加了第一电极和第二电极两者共同的表面积,这提供了额外的电容,而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。 此外,与在接触通孔的底部位置处的清除相反,电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。