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1. 发明授权

US08221941B2 Photomask blank manufacturing method and photomask manufacturing method 有权
标题翻译：光掩模坯料制造方法和光掩模制造方法
公开(公告)号：US08221941B2
公开(公告)日：2012-07-17
申请号：US12647808
申请日：2009-12-28
申请人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
发明人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
IPC分类号： G03F1/22
CPC分类号： G03F1/32
摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.
摘要翻译：在透光性基板上形成由含有金属和硅的材料构成的薄膜。然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时，薄膜图案的转印特性不会超过预定的程度。该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。

2. 发明申请

US20070082278A1 Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权
标题翻译：半色调相移掩模空白，半色调相移掩模及其制造方法
公开(公告)号：US20070082278A1
公开(公告)日：2007-04-12
申请号：US11478687
申请日：2006-07-03
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： B32B9/00 , B32B17/06 , G03C5/00 , G21K5/00 , B32B17/10 , G03F1/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
摘要翻译：用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板，形成在用于透射曝光光束的基板上的透光部分，形成在基板上用于透射部分曝光的移相器部分光束作为透射光束并且将透射光束的相位移动预定量，以及用于形成移相器部分的移相器膜。半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消，从而保持和改善在边界部分处的优异的对比度曝光图案被转印到要曝光的物体的表面上。移相器膜包括以硅，氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。

3. 发明授权

US07282305B2 Reflective mask blank having a programmed defect and method of producing the same, reflective mask having a programmed defect and method of producing the same, and substrate for use in producing the reflective mask blank or the reflective mask having a programmed defect 有权
标题翻译：具有编程缺陷的反射掩模板及其制造方法，具有编程缺陷的反射掩模及其制造方法，以及用于制造反射掩模板或具有编程缺陷的反射掩模的基板
公开(公告)号：US07282305B2
公开(公告)日：2007-10-16
申请号：US10789990
申请日：2004-03-02
申请人： Tsutomo Shoki , Ryo Ohkubo , Takeru Kinoshita
发明人： Tsutomo Shoki , Ryo Ohkubo , Takeru Kinoshita
IPC分类号： G03F1/00
CPC分类号： C23C14/225 , B82Y10/00 , B82Y40/00 , C03C17/36 , C03C17/3636 , C03C17/3649 , C03C17/3665 , C03C23/002 , C03C2204/08 , C03C2217/734 , C23C14/048 , C23C14/46 , G03F1/24 , G03F1/44
摘要： A reflective mask blank has a substrate (1) and a reflective multilayer film (3) formed on the substrate to reflect exposure light. The substrate has a base pattern (2) formed by a predetermined irregularity. On a surface of the reflective multilayer film formed on the base pattern, a step portion corresponding to the base pattern is formed as a programmed defect.
摘要翻译：反射掩模板具有基板（1）和形成在基板上以反射曝光光的反射多层膜（3）。基板具有由预定的凹凸形成的基底图案（2）。在形成在基底图案上的反射多层膜的表面上，形成与基底图案相对应的台阶部分作为编程缺陷。

4. 发明授权

US07115341B2 Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权
公开(公告)号：US07115341B2
公开(公告)日：2006-10-03
申请号：US10370776
申请日：2003-02-24
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.

5. 发明授权

US07632612B2 Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权
标题翻译：半色调相移掩模空白，半色调相移掩模及其制造方法
公开(公告)号：US07632612B2
公开(公告)日：2009-12-15
申请号：US11478687
申请日：2006-07-03
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
摘要翻译：用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板，形成在用于透射曝光光束的基板上的透光部分，形成在基板上用于透射部分曝光的移相器部分光束作为透射光束并且将透射光束的相位移动预定量，以及用于形成移相器部分的移相器膜。半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消，从而保持和改善在边界部分处的优异的对比度曝光图案被转印到要曝光的物体的表面上。移相器膜包括以硅，氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。

6. 发明授权

US07011910B2 Halftone-type phase-shift mask blank, and halftone-type phase-shift mask 有权
标题翻译：半色调型相移掩模空白和半色调型相移掩模
公开(公告)号：US07011910B2
公开(公告)日：2006-03-14
申请号：US10421944
申请日：2003-04-24
申请人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
发明人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G02B5/3083
摘要： In a halftone-type phase-shift mask blank having a phase shifter film 5, the phase shifter film 5 has a phase adjustment layer 4 for primarily controlling the phase of exposure light, and a transmissivity adjustment layer 3 which is formed between a transparent substrate 2 and the phase adjustment layer 4 and primarily controls the transmissivity of exposure light. The transmissivity adjustment layer 3 has a thickness of 90 angstroms or less.
摘要翻译：在具有移相膜5的半色调型移相掩模坯料中，移相膜5具有用于主要控制曝光光的相位的相位调整层4和形成在透明基板之间的透射率调节层3 2和相位调整层4，并主要控制曝光光的透射率。透射率调整层3的厚度为90埃以下。

7. 发明授权

US06317480B1 Method of manufacturing X-ray mask and X-ray mask blank, and X-ray mask and X-ray mask blank manufactured thereby 失效
标题翻译：制造X射线掩模和X射线掩模坯料的方法，以及由此制造的X射线掩模和X射线掩模坯料
公开(公告)号：US06317480B1
公开(公告)日：2001-11-13
申请号：US09296805
申请日：1999-04-23
申请人： Tsutomu Shoki , Akinori Kurikawa , Takamitsu Kawahara , Ryo Ohkubo
发明人： Tsutomu Shoki , Akinori Kurikawa , Takamitsu Kawahara , Ryo Ohkubo
IPC分类号： G03F900
CPC分类号： G03F1/22
摘要： An X-ray mask including a mask support formed into the shape of a frame, an X-ray-transparent film which is supported so as to extend over the surface of the frame-shaped mask support and which permits transmission of X-rays, and a desired X-ray-absorbing film pattern laid on the X-ray-transparent film, wherein the mask support has a thickness which by itself affords sufficient mechanical strength; and a step is formed along the periphery of the mask support.
摘要翻译：一种X射线掩模，其包括形成为框架形状的掩模支撑体，X射线透明膜被支撑以在框状掩模支撑体的表面上延伸并且允许X射线的透射，以及放置在X射线透明膜上的期望的X射线吸收膜图案，其中掩模支撑体具有本身提供足够的机械强度的厚度; 并且沿着掩模支撑件的周边形成台阶。

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