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1. 发明授权

US06317480B1 Method of manufacturing X-ray mask and X-ray mask blank, and X-ray mask and X-ray mask blank manufactured thereby 失效
标题翻译：制造X射线掩模和X射线掩模坯料的方法，以及由此制造的X射线掩模和X射线掩模坯料
公开(公告)号：US06317480B1
公开(公告)日：2001-11-13
申请号：US09296805
申请日：1999-04-23
申请人： Tsutomu Shoki , Akinori Kurikawa , Takamitsu Kawahara , Ryo Ohkubo
发明人： Tsutomu Shoki , Akinori Kurikawa , Takamitsu Kawahara , Ryo Ohkubo
IPC分类号： G03F900
CPC分类号： G03F1/22
摘要： An X-ray mask including a mask support formed into the shape of a frame, an X-ray-transparent film which is supported so as to extend over the surface of the frame-shaped mask support and which permits transmission of X-rays, and a desired X-ray-absorbing film pattern laid on the X-ray-transparent film, wherein the mask support has a thickness which by itself affords sufficient mechanical strength; and a step is formed along the periphery of the mask support.
摘要翻译：一种X射线掩模，其包括形成为框架形状的掩模支撑体，X射线透明膜被支撑以在框状掩模支撑体的表面上延伸并且允许X射线的透射，以及放置在X射线透明膜上的期望的X射线吸收膜图案，其中掩模支撑体具有本身提供足够的机械强度的厚度; 并且沿着掩模支撑件的周边形成台阶。

2. 发明授权

US6128363A X-ray mask blank, x-ray mask, and pattern transfer method 失效
标题翻译： X射线掩模毛坯，X射线掩模和图案转印法
公开(公告)号：US6128363A
公开(公告)日：2000-10-03
申请号：US979839
申请日：1997-11-26
申请人： Tsutomu Shoki , Takamitsu Kawahara
发明人： Tsutomu Shoki , Takamitsu Kawahara
IPC分类号： G03F1/22 , G21K1/10 , H01L21/027 , H01L21/302 , H01L21/3065 , G21K5/00
CPC分类号： G21K1/10
摘要： An X-ray mask blank makes it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. The top and/or the bottom of the X-ray absorber film is provided with a film in which the product of the film stress and the film thickness thereof lies in the range of 0 to .+-.1.times.10.sup.4 dyn/cm.
摘要翻译： X射线掩模坯料可以制造具有极低应力的X射线掩模，从而提供非常高的位置精度。在X射线掩模坯料中，在基板上形成X射线透明膜，在X射线透明膜上形成X射线吸收膜。 X射线吸收膜的顶部和/或底部设置有膜应力和膜厚度的乘积在0至+/- 1×104dyn / cm的范围内的膜。

3. 发明授权

US5999590A X-ray mask blank and manufacturing method for the same, and manufacturing method for X-ray mask 失效
标题翻译： X射线掩模板及其制造方法以及X射线掩模的制造方法
公开(公告)号：US5999590A
公开(公告)日：1999-12-07
申请号：US990041
申请日：1997-12-12
申请人： Tsutomu Shoki , Takamitsu Kawahara
发明人： Tsutomu Shoki , Takamitsu Kawahara
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
CPC分类号： G03F1/22
摘要： An X-ray mask blank and a manufacturing method for an X-ray mask make it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. An etching mask layer composed of a material containing chromium and carbon, and/or nitrogen is provided on the X-ray absorber film.
摘要翻译： X射线掩模坯料和X射线掩模的制造方法使得可以制造具有极低应力的X射线掩模，从而提供非常高的位置精度。在X射线掩模坯料中，在基板上形成X射线透明膜，在X射线透明膜上形成X射线吸收膜。由含有铬和碳的材料和/或氮组成的蚀刻掩模层设置在X射线吸收膜上。

4. 发明授权

US5848120A X-ray mask blank, X-ray mask and pattern transfer method 失效
标题翻译： X射线掩模毛坯，X射线掩模和图案转印法
公开(公告)号：US5848120A
公开(公告)日：1998-12-08
申请号：US923183
申请日：1997-09-04
申请人： Tsutomu Shoki , Takamitsu Kawahara
发明人： Tsutomu Shoki , Takamitsu Kawahara
IPC分类号： G21K5/02 , G03F1/22 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F1/16
CPC分类号： G03F1/22
摘要： There is provided an X-ray mask blank from which an X-ray mask having a remarkably small positional deformation even at a large window size of 50 mm square and a remarkably positional precision can be manufactured. The X-mask blank has an X-ray transparent film on a substrate and an X-ray absorber film on the X-ray transparent film. A product of Young modulus and film thickness of the X-ray transparent film is 6.times.10.sup.8 to 3.times.10.sup.9 dyn/cm.
摘要翻译：提供一种X射线掩模坯料，可以制造即使在大的窗口尺寸为50mm见方也具有非常小的位置变形且显着位置精度的X射线掩模。 X面罩坯料在基板上具有X射线透明膜，在X射线透明膜上具有X射线吸收膜。 X射线透明膜的杨氏模量和膜厚的乘积为6×10 8〜3×10 9体积/ cm。

5. 发明申请

US20080289570A1 Process for Producing Silicon Carbide Single Crystal 有权
标题翻译：生产碳化硅单晶的工艺
公开(公告)号：US20080289570A1
公开(公告)日：2008-11-27
申请号：US11886065
申请日：2006-05-23
申请人： Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta , Hiroyuki Nagasawa
发明人： Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta , Hiroyuki Nagasawa
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C23C16/325 , C23C16/45525 , C30B23/02 , C30B25/02 , C30B25/18
摘要： This invention reduces planar defects which occur within a silicon carbide single crystal when a silicon carbide single crystal is epitaxially grown on a single crystal substrate.The process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is epitaxially grown on the surface of a single crystal substrate is a process in which a plurality of undulations that extend in a single, substantially parallel direction on the substrate surface is formed on the single crystal substrate surface; undulation ridges on the single crystal substrate undulate in the thickness direction of the single crystal substrate; and the undulations are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.
摘要翻译：本发明减少了在单晶衬底上外延生长碳化硅单晶时在碳化硅单晶中发生的平面缺陷。在单晶基板的表面上外延生长碳化硅单晶层的碳化硅单晶的制造方法是在基板表面上沿单个大致平行的方向延伸的多个起伏形成在单晶基板表面上; 单晶基板上的起伏脊在单晶基板的厚度方向上波动; 并且布置波纹，使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。

6. 发明授权

US07101774B2 Method of manufacturing compound single crystal 失效
公开(公告)号：US07101774B2
公开(公告)日：2006-09-05
申请号：US10227336
申请日：2002-08-26
申请人： Hiroyuki Nagasawa , Kuniaki Yagi , Takamitsu Kawahara
发明人： Hiroyuki Nagasawa , Kuniaki Yagi , Takamitsu Kawahara
IPC分类号： H01L21/20 , C30B25/18
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36
摘要： Provided is a method of manufacturing compound single crystals by epitaxially growing a compound single crystal layer differing from the substrate in which the planar defects generated in the crystal that is epitaxially grown are reduced. The method of manufacturing compound single crystals in which a compound single crystalline layer differing from a compound single crystalline substrate is epitaxially grown on the surface of said substrate. Plural undulations extending in a single direction are present on at least a portion of the surface of said substrate, and in that said undulations are provided in such a manner that as said compound single crystalline layer grows, the defects that grow meet each other.

7. 发明授权

US06416578B1 Silicon carbide film and method for manufacturing the same 失效
标题翻译：碳化硅膜及其制造方法
公开(公告)号：US06416578B1
公开(公告)日：2002-07-09
申请号：US09515134
申请日：2000-02-29
申请人： Yukitaka Nakano , Hiroyuki Nagasawa , Kuniaki Yagi , Takamitsu Kawahara
发明人： Yukitaka Nakano , Hiroyuki Nagasawa , Kuniaki Yagi , Takamitsu Kawahara
IPC分类号： C30B2502
CPC分类号： C23C16/325 , C30B25/02 , C30B25/18 , C30B29/36
摘要： There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.
摘要翻译：公开了一种制造碳化硅膜的方法，其中晶体取向在单晶衬底表面上继续并且碳化硅被允许外延生长，该方法包括以下步骤：完全或部分地为衬底表面提供多个起伏在一个方向上平行延伸; 并允许碳化硅在衬底表面上生长。

8. 发明授权

US08133321B2 Process for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US08133321B2
公开(公告)日：2012-03-13
申请号：US11886065
申请日：2006-05-23
申请人： Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta , Hiroyuki Nagasawa
发明人： Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta , Hiroyuki Nagasawa
IPC分类号： C30B25/18
CPC分类号： C30B29/36 , C23C16/325 , C23C16/45525 , C30B23/02 , C30B25/02 , C30B25/18
摘要： A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface is formed on said single crystal substrate surface; each of the undulation ridges on said single crystal substrate surface has a height that undulates as each of the undulation ridges extends in the first direction; and the undulation ridges are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.
摘要翻译：一种碳化硅单晶的制造方法，其中碳化硅单晶层在单晶衬底的表面上同构外延生长或异质外延生长，其中沿着第一方向延伸的多个基本上平行的波纹脊所述单晶衬底表面形成在所述单晶衬底表面上; 所述单晶衬底表面上的每个波纹脊具有随着每个波纹脊在第一方向上延伸的波状的高度; 并且布置隆起脊，使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。

9. 发明授权

US08890170B2 Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate 有权
标题翻译：碳化硅衬底，半导体器件和制造碳化硅衬底的方法
公开(公告)号：US08890170B2
公开(公告)日：2014-11-18
申请号：US13885467
申请日：2011-11-15
申请人： Hiroyuki Nagasawa , Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta
发明人： Hiroyuki Nagasawa , Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta
IPC分类号： H01L29/15 , H01L21/02 , C30B29/36 , H01L29/16
CPC分类号： H01L21/02529 , C30B29/36 , H01L21/02381 , H01L21/0243 , H01L21/02447 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02658 , H01L29/1608
摘要： There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.
摘要翻译：提供由碳化硅组成的碳化硅衬底，其包括内部的封装区域，其在碳化硅和封装区域之间形成非相干边界，其中碳化硅中堆垛层错的传播被阻挡。

10. 发明授权

US07211337B2 Compound crystal and method of manufacturing same 失效
标题翻译：复合晶体及其制造方法
公开(公告)号：US07211337B2
公开(公告)日：2007-05-01
申请号：US10734221
申请日：2003-12-15
申请人： Hiroyuki Nagasawa , Kuniaki Yagi , Takamitsu Kawahara
发明人： Hiroyuki Nagasawa , Kuniaki Yagi , Takamitsu Kawahara
IPC分类号： B32B9/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C30B29/406 , Y10S438/931
摘要： Provided are a compound semiconductor crystal substrate capable of reducing planar defects such as twins and anti-phase boundaries occurring in epitaxially grown crystals without additional steps beyond epitaxial growth, and a method of manufacturing the same. A compound single crystal substrate, the basal plane of which is a nonpolar face, with said basal plane having a partial surface having polarity (a partial polar surface). Said partial polar surface is a polar portion of higher surface energy than said basal plane. A method of manufacturing the compound single crystal substrate, comprising the steps of: epitaxially growing a compound single crystal in the normal direction on a basal plane of a compound single crystal substrate wherein the basal plane is a nonpolar face and has a partial polar surface in a portion thereof, and either cutting the compound single crystal layer that has been grown in parallel to the basal plane, or removing at least said substrate to obtain a compound single crystal block, a basal plane of which is a nonpolar face only having a partial polar surface with the highest surface energy in a portion thereof.
摘要翻译：提供一种化合物半导体晶体基板及其制造方法，其能够减少在外延生长的晶体中发生的诸如双胞胎和反相边界的平面缺陷，而不需要超出外延生长的附加步骤。复合单晶基板，其基面是非极性面，所述基面具有具有极性的部分表面（部分极性表面）。所述部分极性表面是比所述基面更高表面能的极性部分。一种制造复合单晶衬底的方法，包括以下步骤：在复合单晶衬底的基面上沿正向外延生长化合物单晶，其中基面是非极性面并具有部分极性表面并且切割已经与基底平行生长的化合物单晶层，或者至少去除所述基底，以获得化合物单晶块，其基面是仅具有部分极地表面在其一部分具有最高的表面能。

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