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1. 发明授权

US08221941B2 Photomask blank manufacturing method and photomask manufacturing method 有权
标题翻译：光掩模坯料制造方法和光掩模制造方法
公开(公告)号：US08221941B2
公开(公告)日：2012-07-17
申请号：US12647808
申请日：2009-12-28
申请人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
发明人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
IPC分类号： G03F1/22
CPC分类号： G03F1/32
摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.
摘要翻译：在透光性基板上形成由含有金属和硅的材料构成的薄膜。然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时，薄膜图案的转印特性不会超过预定的程度。该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。

2. 发明申请

US20110217635A1 METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：US20110217635A1
公开(公告)日：2011-09-08
申请号：US13122680
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/54 , G03F1/80 , G03F1/82
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译：本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。铬基薄膜由含铬的材料制成。将具有200nm以下波长的曝光光施加到转印掩模。在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及通过蚀刻去除铬基薄膜。该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

3. 发明授权

US08658334B2 Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权
标题翻译：转印掩模，制造转印掩模的方法以及制造半导体器件的方法
公开(公告)号：US08658334B2
公开(公告)日：2014-02-25
申请号：US13501348
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/50 , B08B3/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译：提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

4. 发明申请

US20120251931A1 TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：转移掩模，制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：US20120251931A1
公开(公告)日：2012-10-04
申请号：US13501348
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/00 , G03F7/20 , G03F1/76 , G03F1/46 , G03F1/26
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译：提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

5. 发明授权

US08197993B2 Method of manufacturing transfer mask and method of manufacturing semiconductor device 有权
标题翻译：传输掩模的制造方法和制造半导体器件的方法
公开(公告)号：US08197993B2
公开(公告)日：2012-06-12
申请号：US13122680
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/00 , B08B3/00
CPC分类号： G03F1/46 , G03F1/54 , G03F1/80 , G03F1/82
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译：本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。铬基薄膜由含铬的材料制成。将具有200nm以下波长的曝光光施加到转印掩模。在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及通过蚀刻去除铬基薄膜。该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

6. 发明授权

US08802334B2 Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask 有权
标题翻译：面罩坯料的表面处理方法，掩模坯料的制造方法以及掩模的制造方法
公开(公告)号：US08802334B2
公开(公告)日：2014-08-12
申请号：US13440539
申请日：2012-04-05
申请人： Takeyuki Yamada , Toshiyuki Suzuki , Masahiro Hashimoto , Yasunori Yokoya
发明人： Takeyuki Yamada , Toshiyuki Suzuki , Masahiro Hashimoto , Yasunori Yokoya
IPC分类号： G03F1/00
CPC分类号： G03F1/68 , G03F1/80
摘要： Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.
摘要翻译：提供了一种掩模坯料表面处理方法，用于将具有薄膜的掩模坯料在基板上进行表面处理，使用处理液，形成转印图案的薄膜表面。该薄膜由可以通过基于离子的干蚀刻蚀刻的材料制成。包含在处理液中的蚀刻抑制剂的浓度为0.3ppb以下。

7. 发明授权

US08663876B2 Photomask blank, method of manufacturing the same, photomask, and method of manufacturing the same 有权
标题翻译：光掩模坯料，其制造方法，光掩模及其制造方法
公开(公告)号：US08663876B2
公开(公告)日：2014-03-04
申请号：US13201368
申请日：2010-02-04
申请人： Masahiro Hashimoto , Toshiyuki Suzuki , Hiroyuki Iwashita
发明人： Masahiro Hashimoto , Toshiyuki Suzuki , Hiroyuki Iwashita
IPC分类号： C23C16/34 , G03F1/22
CPC分类号： G03F1/50 , G03F1/32 , G03F1/54
摘要： A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.
摘要翻译：用于制造适用于具有200nm以下的波长的曝光光的光掩模的光掩模坯料在透明基板上具有薄膜。薄膜由含有过渡金属，硅和碳的材料制成，并且包含碳化硅和/或过渡金属碳化物。

8. 发明授权

US08663875B2 Method of manufacturing a photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US08663875B2
公开(公告)日：2014-03-04
申请号：US13201148
申请日：2010-01-29
申请人： Yasushi Okubo , Toshiyuki Suzuki , Masahiro Hashimoto
发明人： Yasushi Okubo , Toshiyuki Suzuki , Masahiro Hashimoto
IPC分类号： G03F1/48
CPC分类号： G03F1/48 , G03F1/32 , G03F1/54
摘要： A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
摘要翻译：在透明基板上形成由含有金属和硅的材料构成的薄膜，通过图案化薄膜形成薄膜图案。然后，预先修改薄膜图案的主表面和侧壁，以便即使在波长为200nm以下的曝光光为200nm以下的情况下，也能够防止薄膜图案的转印特性变化超过规定累积地施加到已经形成的薄膜图案上。主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。

9. 发明授权

US08367276B2 Mask blank and method of manufacturing mask 有权
标题翻译：面膜空白和制作面膜的方法
公开(公告)号：US08367276B2
公开(公告)日：2013-02-05
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/80 , G03F1/54 , G03F1/78
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译：在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。掩模层由含硅的材料制成。掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

10. 发明申请

US20090075185A1 MASK BLANK AND METHOD OF MANUFACTURING MASK 有权
标题翻译： MASK BLANK和制造掩模的方法
公开(公告)号：US20090075185A1
公开(公告)日：2009-03-19
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00
CPC分类号： G03F1/80 , G03F1/54 , G03F1/78
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译：在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。掩模层由含硅的材料制成。掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

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