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1. 发明授权

US08258043B2 Manufacturing method of thin film semiconductor substrate 有权
标题翻译：薄膜半导体衬底的制造方法
公开(公告)号：US08258043B2
公开(公告)日：2012-09-04
申请号：US13225039
申请日：2011-09-02
申请人： Toshiyuki Sameshima , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
发明人： Toshiyuki Sameshima , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/2658 , H01L21/76254
摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.
摘要翻译：薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底沿着气泡层在绝缘基板的一侧形成半导体薄膜。在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。通过使用例如光束来进行半导体衬底的加热。

2. 发明授权

US5608231A Field effect transistor having channel with plural quantum boxes arranged in a common plane 失效
标题翻译：场效应晶体管具有布置在共同平面中的多个量子箱的沟道
公开(公告)号：US5608231A
公开(公告)日：1997-03-04
申请号：US683137
申请日：1996-07-18
申请人： Ryuichi Ugajin , Toshiyuki Sameshima
发明人： Ryuichi Ugajin , Toshiyuki Sameshima
IPC分类号： H01L29/68 , H01L21/338 , H01L29/06 , H01L29/12 , H01L29/772 , H01L29/778 , H01L29/80 , H01L29/812 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L29/127 , H01L29/772
摘要： A field effect transistor has a quantum dot array in its channel region. The quantum dot array is composed of a plurality of quantum dots arranged adjacent to each other on a common plane. Each quantum dot may be made of heterojunction of compound semiconductors or junction of a semiconductor and an insulator. The field effect transistor has a differential negative resistance.
摘要翻译：场效应晶体管在其沟道区域中具有量子点阵列。量子点阵列由公共平面上彼此相邻布置的多个量子点组成。每个量子点可以由化合物半导体或半导体与绝缘体的结的异质结构成。场效应晶体管具有差分负电阻。

3. 发明授权

US5561088A Heating method and manufacturing method for semiconductor device 失效
标题翻译：半导体器件的加热方法和制造方法
公开(公告)号：US5561088A
公开(公告)日：1996-10-01
申请号：US380812
申请日：1995-01-30
申请人： Toshiyuki Sameshima
发明人： Toshiyuki Sameshima
IPC分类号： F26B3/00 , F27D99/00 , H01L21/00 , H01L21/20 , H01L21/203 , H01L21/22 , H01L21/265 , H01L21/28 , H01L21/324 , H01L21/331 , H01L21/336
CPC分类号： H01L21/28185 , F27D99/0001 , H01L21/2652 , H01L21/28211 , H01L21/324 , H01L21/3245 , H01L21/67109 , H01L29/66272 , H01L29/66575 , H01L29/66757 , H01L21/28194 , Y10S148/003 , Y10S148/006
摘要： In a heating method for semiconductor devices, gas is filled in a heat chamber in which a heat target (semiconductor device) is mounted, and then the gas is compressed to produce heat. The heat target is heated to a desired temperature by the produced heat. Before the gas compression is performed, the heat target is preferably pre-heated by a heater.
摘要翻译：在半导体器件的加热方法中，将气体填充在其中安装有热靶（半导体器件）的加热室中，然后将气体压缩以产生热量。通过产生的热将热靶加热至所需温度。在进行气体压缩之前，热目标优选由加热器预热。

4. 发明授权

US5431126A Method of forming semiconductor crystal and semiconductor device 失效
标题翻译：形成半导体晶体和半导体器件的方法
公开(公告)号：US5431126A
公开(公告)日：1995-07-11
申请号：US79553
申请日：1993-06-22
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , C30B13/30
CPC分类号： H01L21/84 , H01L21/2026
摘要： A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
摘要翻译：具有至少一个边缘的薄半导体膜形成在其材料与薄半导体膜的材料不同的基底上。例如，将激光束施加到半导体膜，从而熔化包括边缘的半导体膜，从而使边缘向上凸起。包含边缘的熔融半导体膜被固化，因此再结晶成半导体晶体。在施加激光束之前，可以在薄半导体膜上形成多个隔开的反射膜。可以由半导体晶体制造包括薄膜晶体管，太阳能电池和双极晶体管的各种半导体器件。

5. 发明申请

US20120310556A1 PHOTOINDUCED CARRIER LIFETIME MEASURING METHOD, LIGHT INCIDENCE EFFICIENCY MEASURING METHOD, PHOTOINDUCED CARRIER LIFETIME MEASURING DEVICE, AND LIGHT INCIDENCE EFFICIENCY MEASURING DEVICE 有权
标题翻译：光电传输器寿命测量方法，光发射效率测量方法，光电载波寿命测量装置和光发射效率测量装置
公开(公告)号：US20120310556A1
公开(公告)日：2012-12-06
申请号：US13579043
申请日：2010-09-06
申请人： Toshiyuki Sameshima
发明人： Toshiyuki Sameshima
IPC分类号： G01R31/26 , G06F19/00
CPC分类号： G01N22/00 , G01R31/2648 , G01R31/2831 , H01L22/12
摘要： Disclosed is a photoinduced carrier lifetime measuring method capable of obtaining photoinduced carrier effective lifetime of a semiconductor substrate with high accuracy regardless of the surface state of the sample. The method includes the steps of: irradiating a microwave onto a semiconductor substrate while periodically pulse-irradiating an induction light onto the semiconductor substrate; detecting the microwave transmitted through the semiconductor substrate or reflected by the semiconductor substrate; and obtaining the effective lifetime of photoinduced carriers generated in the semiconductor substrate by the pulse irradiation of the induction light, based on an irradiation duration Ti and a non-irradiation duration T2 when performing the induction light pulse irradiation and an integrated value of each microwave intensity obtained by the detection.
摘要翻译：公开了一种能够以与样品的表面状态无关地高精度获得半导体衬底的光致载流子有效寿命的光电荷寿命测定方法。该方法包括以下步骤：在半导体衬底上周期性地将感应光脉冲照射到半导体衬底上; 检测通过半导体衬底透射的或由半导体衬底反射的微波; 并且通过进行感应光脉冲照射时的照射持续时间Ti和非照射持续时间T2，通过感应光的脉冲照射获得在半导体衬底中产生的光致载流子的有效寿命，以及每个微波强度的积分值通过检测获得。

6. 发明授权

US5889292A Semiconductor device having an improved thin film transistor 失效
标题翻译：具有改进的薄膜晶体管的半导体器件
公开(公告)号：US5889292A
公开(公告)日：1999-03-30
申请号：US571728
申请日：1995-12-13
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/04 , H01L27/108 , H01L29/76 , H01L31/0328
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

7. 发明授权

US5648276A Method and apparatus for fabricating a thin film semiconductor device 失效
标题翻译：用于制造薄膜半导体器件的方法和装置
公开(公告)号：US5648276A
公开(公告)日：1997-07-15
申请号：US250679
申请日：1994-05-26
申请人： Masaki Hara , Naoki Sano , Toshiyuki Sameshima , Atsushi Kohno , Mitsunobu Sekiya , Yasuhiro Kanaya , Michihisa Yano
发明人： Masaki Hara , Naoki Sano , Toshiyuki Sameshima , Atsushi Kohno , Mitsunobu Sekiya , Yasuhiro Kanaya , Michihisa Yano
IPC分类号： H01L21/205 , H01L21/20 , H01L21/324 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L21/67207 , H01L29/4908 , H01L29/66757 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.
摘要翻译：公开了一种用于制造薄膜半导体器件的方法和装置。在晶片上制造的a-Si：H薄膜通过在激光退火室中照射激光束而产生多晶Si薄膜而进行熔融再结晶。然后将晶片输送到CVD室，而不将其暴露于外部空气。在CVD室中的多晶Si薄膜的清洁表面上产生栅极绝缘膜。在另一种情况下，a-Si：H薄膜在激光退火室中熔融再结晶以产生多晶Si薄膜，然后将晶片输送到氢化室，而不暴露于外部空气。此后，多晶Si薄膜在氢化室中被等离子体氢化。该方法和装置可以通过制造清洁且高质量的半导体/绝缘体界面或通过不导电导电性的变化来氢化半导体薄膜来制造具有高性能和高可靠性的薄膜半导体器件。

8. 发明授权

US5446304A Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate 失效
标题翻译：绝缘栅型场效应晶体管具有与主栅极不同的衬底间距的底栅
公开(公告)号：US5446304A
公开(公告)日：1995-08-29
申请号：US314929
申请日：1994-09-29
申请人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/78 , H01L29/786 , H01L29/76 , H01L27/01 , H01L29/04
CPC分类号： H01L27/092 , H01L29/78645 , H01L29/78648
摘要： An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
摘要翻译：绝缘栅型场效应晶体管的有源层由本征多晶半导体薄膜形成，源电极和漏电极形成在有源层上。源极区域和漏极区域不形成在有源层中。主栅极形成在源电极和漏电极之间的部分的栅极绝缘膜上。在门极绝缘膜上分别在源电极和主栅电极之间的部分以及漏电极和主栅电极之间的部分形成栅极电极。

9. 发明申请

US20090253273A1 METHOD OF HEAT-TREATING SEMICONDUCTOR 审中-公开
标题翻译：热处理半导体的方法
公开(公告)号：US20090253273A1
公开(公告)日：2009-10-08
申请号：US12305180
申请日：2007-04-25
申请人： Naoki Sano , Toshiyuki Sameshima
发明人： Naoki Sano , Toshiyuki Sameshima
IPC分类号： H01L21/268
CPC分类号： H01L21/324 , H01L21/02381 , H01L21/02683 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： The present invention relates to a method of heat-treating a semiconductor, and the object is to enable heat-treating to a semiconductor or semiconductor device in a short period time and to obtain a stable and high reforming effect. The present invention is a method in which carbon or a layer including carbon is provided as a light absorbing layer, and a semiconductor material as a heat-treating target layer or semiconductor device contacting the heat absorbing layer directly or through a heat transfer layer of 5 nm-100 μm in thickness is heat-treated, and the light source to be used is a semiconductor laser light of wavelength of 600 nm-2 μm, and this semiconductor laser light is caused to continuously irradiate and sweep the surface of the heat-treating target material. The light source can be easily made to output high power, and heat-treating at a high speed and with low energy consumption is realized.
摘要翻译：半导体热处理方法技术领域本发明涉及半导体的热处理方法，其目的在于能够在短时间内对半导体或半导体器件进行热处理，并获得稳定且高的重整效果。本发明是提供碳或包含碳的层作为光吸收层的方法，以及作为热处理对象层的半导体材料或半导体器件直接或通过5的传热层与吸热层接触热处理厚度为nm-100μm的光，所使用的光源为波长为600nm-2μm的半导体激光，并且使该半导体激光连续地照射并扫描散热片的表面，处理目标材料。可以容易地实现光源输出高功率，实现高速，低能耗的热处理。

10. 发明授权

US5910015A Thin film transistor and manufacturing method of the thin film transistor 失效
标题翻译：薄膜晶体管及薄膜晶体管的制造方法
公开(公告)号：US5910015A
公开(公告)日：1999-06-08
申请号：US25616
申请日：1998-02-18
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

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