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1. 发明授权

US5446304A Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate 失效
标题翻译：绝缘栅型场效应晶体管具有与主栅极不同的衬底间距的底栅
公开(公告)号：US5446304A
公开(公告)日：1995-08-29
申请号：US314929
申请日：1994-09-29
申请人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/78 , H01L29/786 , H01L29/76 , H01L27/01 , H01L29/04
CPC分类号： H01L27/092 , H01L29/78645 , H01L29/78648
摘要： An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
摘要翻译：绝缘栅型场效应晶体管的有源层由本征多晶半导体薄膜形成，源电极和漏电极形成在有源层上。源极区域和漏极区域不形成在有源层中。主栅极形成在源电极和漏电极之间的部分的栅极绝缘膜上。在门极绝缘膜上分别在源电极和主栅电极之间的部分以及漏电极和主栅电极之间的部分形成栅极电极。

2. 发明授权

US5591653A Method of manufacturing Si-Ge thin film transistor 失效
标题翻译：制造Si-Ge薄膜晶体管的方法
公开(公告)号：US5591653A
公开(公告)日：1997-01-07
申请号：US440645
申请日：1995-05-15
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/66742 , H01L29/78684 , Y10S148/058
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

3. 发明授权

US5304250A Plasma system comprising hollow mesh plate electrode 失效
标题翻译：等离子体系包括中空网板电极
公开(公告)号：US5304250A
公开(公告)日：1994-04-19
申请号：US909660
申请日：1992-07-07
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45514 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J2237/3325
摘要： A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.
摘要翻译：一种等离子体系统，其消除由等离子体中的带电粒子产生的损伤，并能够在大面积基板上进行均匀的等离子体CVD和等离子体蚀刻，其中具有多个孔的网板被放置在等离子体产生室以及基板处理室，其保持基板，将高频电场施加在等离子体产生室中的上部电极与网板之间，以通过电放电解除等离子体形成气体，从而产生等离子体。由此，等离子体与基板隔离。另一方面，源气体供给口在网板的孔附近打开，从那里引入的源气体通过孔与等离子体接触，从而可以在广泛的区域均匀地制造反应产物。如果反应产物是沉积物状物质，则可以进行等离子体CVD，而如果是蚀刻型，则可以进行等离子体蚀刻。

4. 发明授权

US5431126A Method of forming semiconductor crystal and semiconductor device 失效
标题翻译：形成半导体晶体和半导体器件的方法
公开(公告)号：US5431126A
公开(公告)日：1995-07-11
申请号：US79553
申请日：1993-06-22
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , C30B13/30
CPC分类号： H01L21/84 , H01L21/2026
摘要： A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
摘要翻译：具有至少一个边缘的薄半导体膜形成在其材料与薄半导体膜的材料不同的基底上。例如，将激光束施加到半导体膜，从而熔化包括边缘的半导体膜，从而使边缘向上凸起。包含边缘的熔融半导体膜被固化，因此再结晶成半导体晶体。在施加激光束之前，可以在薄半导体膜上形成多个隔开的反射膜。可以由半导体晶体制造包括薄膜晶体管，太阳能电池和双极晶体管的各种半导体器件。

5. 发明授权

US5910015A Thin film transistor and manufacturing method of the thin film transistor 失效
标题翻译：薄膜晶体管及薄膜晶体管的制造方法
公开(公告)号：US5910015A
公开(公告)日：1999-06-08
申请号：US25616
申请日：1998-02-18
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

6. 发明授权

US5726487A Semiconductor device having an improved thin film transistor 失效
公开(公告)号：US5726487A
公开(公告)日：1998-03-10
申请号：US331273
申请日：1994-10-28
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/76 , H01L29/22 , H01L31/117
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

7. 发明授权

US5145808A Method of crystallizing a semiconductor thin film 失效
标题翻译：使半导体薄膜结晶的方法
公开(公告)号：US5145808A
公开(公告)日：1992-09-08
申请号：US747708
申请日：1991-08-20
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/2026 , Y10S117/904 , Y10S148/093 , Y10S148/134
摘要： A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e., the minimum energy density that will roughen the surface of the semiconductor thin film, the energy density of each of the secondary laser beams on the front side of the first secondary laser beam with respect to the direction of step feed is lower than a melting energy density, i.e., the minimum energy density of each of the secondary laser beams on the back side of the first secondary laser beam with respect to the direction of step feed is higher than the melting energy density and lower than and nearly equal to the threshold energy density.
摘要翻译：使半导体薄膜结晶的方法使由脉冲激光器发射的激光沿第一方向移动，以用激光束照射半导体锡膜进行扫描。激光束被分成多个宽度小于阶梯进给节距的次级激光束，分别具有不同的能量密度，形成阶梯能量密度分布，相对于台阶方向从中间向相对端减小饲料。对应于能量分布中间的第一次级激光束的能量密度高于阈值能量密度，即将熔化半导体薄膜以使其成为相同无定形且低于粗糙能量的最小能量密度密度，即将使粗糙化半导体薄膜的表面的最小能量密度，相对于步进进给方向，第一次级激光束正面上的每个次级激光束的能量密度低于熔融能量密度，即第一次级激光束的背侧上的每个次级激光束相对于步进进给方向的最小能量密度高于熔融能量密度，并且低于并且几乎等于阈值能量密度。

8. 发明授权

US5889292A Semiconductor device having an improved thin film transistor 失效
标题翻译：具有改进的薄膜晶体管的半导体器件
公开(公告)号：US5889292A
公开(公告)日：1999-03-30
申请号：US571728
申请日：1995-12-13
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/04 , H01L27/108 , H01L29/76 , H01L31/0328
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

9. 发明授权

US5437734A Solar cell 失效
标题翻译：太阳能电池
公开(公告)号：US5437734A
公开(公告)日：1995-08-01
申请号：US193467
申请日：1994-02-08
申请人： Takeshi Matsushita , Dharam P. Gosain , Jonathan Westwater , Setsuo Usui , Kunio Hane
发明人： Takeshi Matsushita , Dharam P. Gosain , Jonathan Westwater , Setsuo Usui , Kunio Hane
IPC分类号： H01L31/068 , H01L31/0687 , H01L31/18 , H01L31/06 , H01L31/078
CPC分类号： H01L31/0687 , H01L31/068 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： Disclosed herein is a solar cell which is composed basically of a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a third semiconductor layer formed between them. The third semiconductor layer has a band gap narrower than that of the first and second semiconductor layers. The third semiconductor layer also has a pn junction therein. The semiconductor layers are each separated by a buffer layer in which the composition changes gradually across the thickness so that the lattice mismatch between the semiconductor layers is relieved.
摘要翻译：这里公开了一种太阳能电池，其基本上由第一导电类型的第一半导体层，第二导电类型的第二半导体层和在它们之间形成的第三半导体层组成。第三半导体层具有比第一和第二半导体层窄的带隙。第三半导体层也具有pn结。半导体层各自被缓冲层隔开，其中组合物在整个厚度上逐渐变化，使得半导体层之间的晶格失配缓解。

10. 发明授权

US5637180A Plasma processing method and plasma generator 失效
标题翻译：等离子体处理方法和等离子体发生器
公开(公告)号：US5637180A
公开(公告)日：1997-06-10
申请号：US533095
申请日：1995-09-25
申请人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
发明人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
IPC分类号： C23C14/54 , C23C16/452 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C03C25/06
CPC分类号： H01J37/32871 , C23C16/452
摘要： A plasma-processing method used in processes for manufacturing semiconductor devices. During plasma processing, ultraviolet radiation is emitted from a region where a plasma is created. An ultraviolet radiation-blocking means blocks the ultraviolet radiation from impinging on the sample surface to protect it. The blocking means passes particles forming a plasma onto the sample surface. The particles passed through the ultraviolet radiation-blocking plates are implanted into the sample. Alternatively, the processed surface of the sample is etched, or a film is deposited on the processed surface of the sample.
摘要翻译：一种等离子体处理方法，用于制造半导体器件的工艺。在等离子体处理期间，从产生等离子体的区域发射紫外线。紫外线辐射阻挡装置阻止紫外线照射在样品表面上以保护其。阻挡装置将形成等离子体的颗粒通过到样品表面上。将穿过紫外线辐射阻挡板的颗粒植入样品中。或者，对被处理的样品表面进行蚀刻，或者将膜沉积在样品的经处理表面上。

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