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1. 发明授权

US5431126A Method of forming semiconductor crystal and semiconductor device 失效
标题翻译：形成半导体晶体和半导体器件的方法
公开(公告)号：US5431126A
公开(公告)日：1995-07-11
申请号：US79553
申请日：1993-06-22
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , C30B13/30
CPC分类号： H01L21/84 , H01L21/2026
摘要： A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
摘要翻译：具有至少一个边缘的薄半导体膜形成在其材料与薄半导体膜的材料不同的基底上。例如，将激光束施加到半导体膜，从而熔化包括边缘的半导体膜，从而使边缘向上凸起。包含边缘的熔融半导体膜被固化，因此再结晶成半导体晶体。在施加激光束之前，可以在薄半导体膜上形成多个隔开的反射膜。可以由半导体晶体制造包括薄膜晶体管，太阳能电池和双极晶体管的各种半导体器件。

2. 发明授权

US5591653A Method of manufacturing Si-Ge thin film transistor 失效
标题翻译：制造Si-Ge薄膜晶体管的方法
公开(公告)号：US5591653A
公开(公告)日：1997-01-07
申请号：US440645
申请日：1995-05-15
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/66742 , H01L29/78684 , Y10S148/058
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

3. 发明授权

US5304250A Plasma system comprising hollow mesh plate electrode 失效
标题翻译：等离子体系包括中空网板电极
公开(公告)号：US5304250A
公开(公告)日：1994-04-19
申请号：US909660
申请日：1992-07-07
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45514 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J2237/3325
摘要： A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.
摘要翻译：一种等离子体系统，其消除由等离子体中的带电粒子产生的损伤，并能够在大面积基板上进行均匀的等离子体CVD和等离子体蚀刻，其中具有多个孔的网板被放置在等离子体产生室以及基板处理室，其保持基板，将高频电场施加在等离子体产生室中的上部电极与网板之间，以通过电放电解除等离子体形成气体，从而产生等离子体。由此，等离子体与基板隔离。另一方面，源气体供给口在网板的孔附近打开，从那里引入的源气体通过孔与等离子体接触，从而可以在广泛的区域均匀地制造反应产物。如果反应产物是沉积物状物质，则可以进行等离子体CVD，而如果是蚀刻型，则可以进行等离子体蚀刻。

4. 发明授权

US5910015A Thin film transistor and manufacturing method of the thin film transistor 失效
标题翻译：薄膜晶体管及薄膜晶体管的制造方法
公开(公告)号：US5910015A
公开(公告)日：1999-06-08
申请号：US25616
申请日：1998-02-18
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

5. 发明授权

US5726487A Semiconductor device having an improved thin film transistor 失效
公开(公告)号：US5726487A
公开(公告)日：1998-03-10
申请号：US331273
申请日：1994-10-28
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/76 , H01L29/22 , H01L31/117
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

6. 发明授权

US5145808A Method of crystallizing a semiconductor thin film 失效
标题翻译：使半导体薄膜结晶的方法
公开(公告)号：US5145808A
公开(公告)日：1992-09-08
申请号：US747708
申请日：1991-08-20
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/2026 , Y10S117/904 , Y10S148/093 , Y10S148/134
摘要： A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e., the minimum energy density that will roughen the surface of the semiconductor thin film, the energy density of each of the secondary laser beams on the front side of the first secondary laser beam with respect to the direction of step feed is lower than a melting energy density, i.e., the minimum energy density of each of the secondary laser beams on the back side of the first secondary laser beam with respect to the direction of step feed is higher than the melting energy density and lower than and nearly equal to the threshold energy density.
摘要翻译：使半导体薄膜结晶的方法使由脉冲激光器发射的激光沿第一方向移动，以用激光束照射半导体锡膜进行扫描。激光束被分成多个宽度小于阶梯进给节距的次级激光束，分别具有不同的能量密度，形成阶梯能量密度分布，相对于台阶方向从中间向相对端减小饲料。对应于能量分布中间的第一次级激光束的能量密度高于阈值能量密度，即将熔化半导体薄膜以使其成为相同无定形且低于粗糙能量的最小能量密度密度，即将使粗糙化半导体薄膜的表面的最小能量密度，相对于步进进给方向，第一次级激光束正面上的每个次级激光束的能量密度低于熔融能量密度，即第一次级激光束的背侧上的每个次级激光束相对于步进进给方向的最小能量密度高于熔融能量密度，并且低于并且几乎等于阈值能量密度。

7. 发明授权

US5889292A Semiconductor device having an improved thin film transistor 失效
标题翻译：具有改进的薄膜晶体管的半导体器件
公开(公告)号：US5889292A
公开(公告)日：1999-03-30
申请号：US571728
申请日：1995-12-13
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/04 , H01L27/108 , H01L29/76 , H01L31/0328
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

8. 发明授权

US5446304A Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate 失效
标题翻译：绝缘栅型场效应晶体管具有与主栅极不同的衬底间距的底栅
公开(公告)号：US5446304A
公开(公告)日：1995-08-29
申请号：US314929
申请日：1994-09-29
申请人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/78 , H01L29/786 , H01L29/76 , H01L27/01 , H01L29/04
CPC分类号： H01L27/092 , H01L29/78645 , H01L29/78648
摘要： An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
摘要翻译：绝缘栅型场效应晶体管的有源层由本征多晶半导体薄膜形成，源电极和漏电极形成在有源层上。源极区域和漏极区域不形成在有源层中。主栅极形成在源电极和漏电极之间的部分的栅极绝缘膜上。在门极绝缘膜上分别在源电极和主栅电极之间的部分以及漏电极和主栅电极之间的部分形成栅极电极。

9. 发明授权

US06376290B1 Method of forming a semiconductor thin film on a plastic substrate 失效
标题翻译：在塑料基板上形成半导体薄膜的方法
公开(公告)号：US06376290B1
公开(公告)日：2002-04-23
申请号：US09116119
申请日：1998-07-16
申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
发明人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78603
摘要： A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. It is possible to increase energy intensity of energy beam radiated for polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译：提供了一种用于形成半导体薄膜的方法，该半导体薄膜不会损坏具有用于完美多晶化的最佳能量值的脉冲激光束的辐射。为了形成非晶硅薄膜，以用作去除挥发性污染物如抗蚀剂的脉冲激光束作为基底和绝缘层的塑料基板的表面各自辐射，作为预处理。因此防止了由基底衬底发出的气体和由挥发性污染物引起的绝缘层引起的膜损伤。在基板上形成包括阻气层和难熔缓冲层的保护层。从而防止了从基板到非晶硅膜的气体渗透。也可以防止能量束辐射产生的热量传导到基板上。可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。

10. 发明授权

US06285055B1 Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device 有权
标题翻译：存储器件及其制造方法，以及半导体器件的集成电路及其制造方法
公开(公告)号：US06285055B1
公开(公告)日：2001-09-04
申请号：US09381987
申请日：1999-11-29
申请人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
发明人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
IPC分类号： H01L29788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/8221 , H01L21/84 , H01L27/1203 , H01L29/7883 , H01L29/792
摘要： While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.
摘要翻译：虽然存储区域15具有许多分散的微粒（点）（15a），但是微粒（15a）的表面密度被设定为高于在隧道绝缘膜（14a）中产生的结构孔（针孔）的表面密度，或存储区域（15）中的微粒（15a）的数量设定为五个以上。虽然通过表面粗糙度为0.1nm至100nm的多晶硅层（13）形成导电区域（13c），但存储区域（15）中的微粒（15a）的数量被设定为大于数字的导电区域（13c）中的晶粒。即使当在隧道绝缘膜（14a）中出现诸如针孔的缺陷，并且存储在一部分微粒中的电荷泄漏时，存储在形成于不发生缺陷的区域中的微粒中的电荷也不会泄漏。因此，信息可以持续很长时间。

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