专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070190447A1 Photoresist composition and method of forming resist pattern 审中-公开
标题翻译：光刻胶组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070190447A1
公开(公告)日：2007-08-16
申请号：US10589382
申请日：2005-02-01
申请人： Toshiyuki Ogata , Takuma Hojo , Hiromitsu Tsuji , Takako Hirosaki , Mitsuru Sato
发明人： Toshiyuki Ogata , Takuma Hojo , Hiromitsu Tsuji , Takako Hirosaki , Mitsuru Sato
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , B82Y30/00 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.
摘要翻译：通过包含具有两个或多个丙二酸酯残基的富勒烯衍生物（A）形成光致抗蚀剂组合物。优选地，丙二酸酯残基是一个基团优选由下面通式（1）表示。在式（1）中，R 1和R 2独立地表示可以相同或不同的烷基。烷基是碳原子数为1〜10的正，支链或环状烷基，n为2〜10的整数。

2. 发明申请

US20090047600A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090047600A1
公开(公告)日：2009-02-19
申请号：US11813765
申请日：2005-12-14
申请人： Takako Hirosaki , Tomoyuki Ando , Takuma Hojo
发明人： Takako Hirosaki , Tomoyuki Ando , Takuma Hojo
IPC分类号： G03C1/73 , G03F7/20
CPC分类号： G03F7/0397 , C08F212/14 , C08F220/24 , C08F220/26 , C08F220/28 , C08F257/00 , C08K5/17 , C09D125/18 , Y10S430/108 , Y10S430/111 , C08F2/04 , C08F216/12
摘要： Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.
摘要翻译：公开了能够提供能够形成具有降低LER的高分辨率图案的正型抗蚀剂组合物和抗蚀剂图案形成方法的正性抗蚀剂组合物，正性抗蚀剂组合物包含具有酸解离性，溶解抑制基团的树脂组分（A）并且在酸的作用下表现出增加的碱溶解性，以及产生暴露酸的酸产生剂组分（B），其中树脂组分（A）含有具有衍生自下述结构单元（a1）的高分子化合物（A1）羟基苯乙烯和由具有酸解离性，溶解抑制基团，氟原子或氟化低级烷基在α-位上结合的丙烯酸酯衍生的结构单元（a2）。

3. 发明申请

US20090253077A1 Anti-reflection film forming material, and method for forming resist pattern using the same 有权
标题翻译：防反射膜形成材料，以及使用其形成抗蚀剂图案的方法
公开(公告)号：US20090253077A1
公开(公告)日：2009-10-08
申请号：US12385195
申请日：2009-04-01
申请人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
发明人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
IPC分类号： G03F7/20 , C08F20/04 , C08L39/06 , C08L33/02 , C08K5/16 , C08K3/28
CPC分类号： C09D139/06 , C08K5/17 , C08K5/175 , C08K5/19 , G03F7/091 , Y10S438/952
摘要： The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.
摘要翻译：根据本发明的抗反射成膜材料包括（a）具有乙酸乙烯酯构成单元的水溶性树脂，和（b）具有由以下通式表示的构成单元的化合物。其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子，具有1-10个碳原子的烷基或由 - （CH2）n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - （CH 2）n -O-R 5 -R 6表示的基团，其中：R 5表示直接键或可以被-O-间隔的具有1至10个碳原子的亚烷基链; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基， n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

4. 发明授权

US07871753B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07871753B2
公开(公告)日：2011-01-18
申请号：US12090826
申请日：2006-11-09
申请人： Tasuku Matsumiya , Takako Hirosaki
发明人： Tasuku Matsumiya , Takako Hirosaki
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).
摘要翻译：本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），其中树脂组分（A）包括含有羧基的结构单元（a0）和选自由通式（a1-2）表示的结构单元和由通式（a1-2）表示的结构单元）组成的组中的至少一种结构单元（a1） -4）（式中，Y表示脂肪族环状或低级烷基，n表示0〜3的整数，m表示0或1，R表示氢原子，卤原子，低级烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。

5. 发明申请

US20090162786A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20090162786A1
公开(公告)日：2009-06-25
申请号：US12090826
申请日：2006-11-09
申请人： Tasuku Matsumiya , Takako Hirosaki
发明人： Tasuku Matsumiya , Takako Hirosaki
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).
摘要翻译：本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），其中树脂组分（A）包括含有羧基的结构单元（a0）和选自由通式（a1-2）表示的结构单元和由通式（a1-2）表示的结构单元）组成的组中的至少一种结构单元（a1） -4）（式中，Y表示脂肪族环状或低级烷基，n表示0〜3的整数，m表示0或1，R表示氢原子，卤原子，低级烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。

6. 发明申请

US20090075177A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090075177A1
公开(公告)日：2009-03-19
申请号：US11719179
申请日：2005-11-28
申请人： Tomoyuki Ando , Takako Hirosaki
发明人： Tomoyuki Ando , Takako Hirosaki
IPC分类号： G03F7/004 , G03F7/20 , G03F1/00
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (α-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C).
摘要翻译：提供具有优异的尺寸控制性的正型抗蚀剂组合物和抗蚀剂图案形成方法。该正性抗蚀剂组合物含有包含由（α-甲基）羟基苯乙烯衍生的构成单元（a11）的碱溶性结构单元（a1）和具有酸解离溶解性的结构单元（a2）的树脂成分（A）包括由以下通式（II）表示的酸解离溶解抑制基团（II）和/或特定链酸解离溶解抑制基团（III）的组合物。酸性发生剂组分（B），其在暴露时产生酸; 优选含有芳香族胺（C）。

7. 发明授权

US07033731B2 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US07033731B2
公开(公告)日：2006-04-25
申请号：US10901207
申请日：2004-07-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7/11
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案化的新型多层体，当多层结构在基材表面上包含下面的不溶于水的抗蚀剂层时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层，反射膜和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂; （B）0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

8. 发明授权

US06297174B2 Method for the formation of a planarizing coating film on substrate surface 有权
标题翻译：在基板表面上形成平坦化涂膜的方法
公开(公告)号：US06297174B2
公开(公告)日：2001-10-02
申请号：US09765276
申请日：2001-01-22
申请人： Etsuko Iguchi , Takako Hirosaki , Masakazu Kobayashi
发明人： Etsuko Iguchi , Takako Hirosaki , Masakazu Kobayashi
IPC分类号： H01L2131
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/31055 , H01L21/312
摘要： A method is disclosed for the formation of a planarizing coating film on the surface of a substrate having a stepped level difference under processing for the manufacture of semiconductor devices. The inventive method capable of giving a planarizing coating film of excellent planarity and good adhesion to the substrate surface comprises the steps of: (a) coating the substrate surface with a coating solution containing, as a film-forming solute uniformly dissolved in an ,organic solvent, a nitrogen-containing organic compound such as benzoguanamine and melamine having, in a molecule, at least two amino and/or imino groups each substituted for the nitrogen-bonded hydrogen atom by a hydroxyalkyl group or an alkoxyalkyl group to form a coating layer; (b) drying the coating layer by evaporating the organic solvent to form a dried coating layer; and (c) subjecting the dried coating layer to a baking treatment at a temperature in the range from 150 to 250° C.
摘要翻译：公开了一种用于在半导体器件的制造处理中在具有台阶级差的衬底的表面上形成平坦化涂膜的方法。能够赋予平坦化性和对基材表面的良好粘合性的平坦化涂膜的本发明的方法包括以下步骤：（a）用包含均匀溶解在有机物中的成膜溶质的涂布溶液涂布基材表面溶剂，诸如苯并胍胺和三聚氰胺的含氮有机化合物在分子中具有至少两个氨基和/或亚氨基，其各自通过羟烷基或烷氧基烷基取代与氮键合的氢原子，以形成涂层 ;（b）通过蒸发有机溶剂干燥涂层以形成干燥的涂层; 和（c）在150-250℃的温度下对干燥的涂层进行烘烤处理。

9. 发明授权

US08216775B2 Anti-reflection film forming material, and method for forming resist pattern using the same 有权
标题翻译：防反射膜形成材料，以及使用其形成抗蚀剂图案的方法
公开(公告)号：US08216775B2
公开(公告)日：2012-07-10
申请号：US12385195
申请日：2009-04-01
申请人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
发明人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
IPC分类号： H01L21/027 , G03F7/11 , G03F7/30
CPC分类号： C09D139/06 , C08K5/17 , C08K5/175 , C08K5/19 , G03F7/091 , Y10S438/952
摘要： The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.
摘要翻译：根据本发明的抗反射成膜材料包括（a）具有乙酸乙烯酯构成单元的水溶性树脂，和（b）具有由以下通式表示的构成单元的化合物。其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子，具有1-10个碳原子的烷基或由 - （CH2）n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - （CH 2）n -O-R 5 -R 6表示的基团，其中：R 5表示直接键或具有1〜10个碳原子的亚烷基，其可以被-O- ; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基， n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

10. 发明授权

US08158328B2 Composition for formation of anti-reflection film, and method for formation of resist pattern using the same 有权
标题翻译：用于形成抗反射膜的组合物以及使用其形成抗蚀剂图案的方法
公开(公告)号：US08158328B2
公开(公告)日：2012-04-17
申请号：US12449494
申请日：2008-01-08
申请人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
发明人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
IPC分类号： G03F7/11 , G03F7/26
CPC分类号： G03F7/091 , G03F7/0046 , G03F7/0048 , H01L21/0276
摘要： A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.
摘要翻译：提供了一种在抗蚀剂膜上形成抗反射膜的组合物，其处理性能优异，并且在形成膜之后不伴随着沉积物等的产生。提供一种用于形成设置在抗蚀剂膜上的抗反射膜的组合物，其至少包含一些含氟表面活性剂和一定的水溶性成膜组分。用于形成抗反射膜的组合物可以容易地处理，对健康或环境没有不利影响，并且即使在形成抗反射膜之后也避免沉积物等的产生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式