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1. 发明申请

US20110277432A1 MAT, METHOD FOR PRODUCING THE MAT, AND EXHAUST GAS PURIFYING APPARATUS 有权
标题翻译： MAT，MATLAB的生产方法和排气净化装置
公开(公告)号：US20110277432A1
公开(公告)日：2011-11-17
申请号：US13105838
申请日：2011-05-11
申请人： Hiromitsu TSUJI
发明人： Hiromitsu TSUJI
IPC分类号： B32B5/26 , C04B35/64 , F01N3/00 , B32B7/00
CPC分类号： F01N3/2853 , B32B18/00 , C04B35/62245 , C04B2235/5224 , C04B2235/5228 , C04B2235/5232 , C04B2235/526 , C04B2235/5264 , C04B2235/5272 , C04B2237/341 , C04B2237/346 , C04B2237/365 , C04B2237/38 , C04B2237/584 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/765 , F01N2350/04 , F01N2450/02 , Y10T428/24174 , Y10T442/3748 , Y10T442/669 , Y10T442/67 , Y10T442/687 , Y10T442/691
摘要： A mat includes a first main face and a second main face opposite to the first main face. At least two layers include a first layer occupying a first area from the first main face along a thickness direction of the mat. The first layer includes a first long fibrous substance which includes an inorganic fibrous substance. A second layer is adjacent to the first layer. The second layer includes a short fibrous substance which includes an inorganic fibrous substance and which has an average fiber length shorter than an average fiber length of the first long fibrous substance. An intertwined portion extends from the first main face to the second main face. The intertwined portion includes the first long fibrous substance and the short fibrous substance being more closely intertwined with each other than the inorganic fibrous substances in a portion except the intertwined portion.
摘要翻译：垫包括与第一主面相对的第一主面和第二主面。至少两层包括沿着垫的厚度方向占据第一主面的第一区域的第一层。第一层包括包含无机纤维物质的第一长纤维物质。第二层与第一层相邻。第二层包括短纤维状物质，其包含无机纤维物质，其平均纤维长度短于第一长纤维物质的平均纤维长度。相互缠绕的部分从第一主面延伸到第二主面。相互交织的部分包括第一长纤维物质和短纤维物质，除了缠结部分之外的部分中，与无机纤维物质相互更密合地缠结。

2. 发明授权

US07326512B2 Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound 失效
标题翻译：含高分子化合物的高分子化合物，抗蚀剂组合物和溶解抑制剂
公开(公告)号：US07326512B2
公开(公告)日：2008-02-05
申请号：US10501459
申请日：2003-11-28
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Hideo Hada , Ryoichi Takasu , Mitsuru Sato
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Hideo Hada , Ryoichi Takasu , Mitsuru Sato
IPC分类号： G03F7/039 , C08F18/20 , C08F214/18 , C08F14/18
CPC分类号： G03F7/0046 , C08F20/22 , G03F7/0397 , Y10S430/108
摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound.To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.
摘要翻译：提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。为了确保耐蚀刻性，将脂环族基团引入侧链部分。脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。作为脂环基，优选使用多环基。通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

3. 发明授权

US07264918B2 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith 有权
标题翻译：用于液浸曝光工艺的抗蚀剂组合物及其形成抗蚀剂图案的方法
公开(公告)号：US07264918B2
公开(公告)日：2007-09-04
申请号：US10546529
申请日：2004-03-24
申请人： Kotaro Endo , Masaaki Yoshida , Taku Hirayama , Hiromitsu Tsuji , Toshiyuki Ogata , Mitsuru Sato
发明人： Kotaro Endo , Masaaki Yoshida , Taku Hirayama , Hiromitsu Tsuji , Toshiyuki Ogata , Mitsuru Sato
IPC分类号： G03F7/039 , G03F7/11 , G03F7/207 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.
摘要翻译：一种用于液浸光刻工艺的抗蚀剂组合物，其包括：（A）包含（a1）碱可溶性结构单元的聚合物，其各自包含具有（i）氟原子或氟代烷基的脂环族基团和（ii）醇羟基基团，其中聚合物由于酸的作用而改变碱溶解度; 和（B）由于曝光而产生酸的酸发生剂，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。通过抗蚀剂组合物或方法，可以避免浸渍液体的不利影响，同时实现高分辨率和高焦度聚焦。

4. 发明申请

US20070190447A1 Photoresist composition and method of forming resist pattern 审中-公开
标题翻译：光刻胶组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070190447A1
公开(公告)日：2007-08-16
申请号：US10589382
申请日：2005-02-01
申请人： Toshiyuki Ogata , Takuma Hojo , Hiromitsu Tsuji , Takako Hirosaki , Mitsuru Sato
发明人： Toshiyuki Ogata , Takuma Hojo , Hiromitsu Tsuji , Takako Hirosaki , Mitsuru Sato
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , B82Y30/00 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.
摘要翻译：通过包含具有两个或多个丙二酸酯残基的富勒烯衍生物（A）形成光致抗蚀剂组合物。优选地，丙二酸酯残基是一个基团优选由下面通式（1）表示。在式（1）中，R 1和R 2独立地表示可以相同或不同的烷基。烷基是碳原子数为1〜10的正，支链或环状烷基，n为2〜10的整数。

5. 发明申请

US20060154170A1 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith 有权
标题翻译：用于液浸曝光工艺的抗蚀剂组合物及其形成抗蚀剂图案的方法
公开(公告)号：US20060154170A1
公开(公告)日：2006-07-13
申请号：US10546529
申请日：2004-03-24
申请人： Kotaro Endo , Masaaki Yoshida , Taku Hirayama , Hiromitsu Tsuji , Toshiyuki Ogata , Mitsuru Sato
发明人： Kotaro Endo , Masaaki Yoshida , Taku Hirayama , Hiromitsu Tsuji , Toshiyuki Ogata , Mitsuru Sato
IPC分类号： G03C1/76
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.
摘要翻译：一种用于液浸光刻工艺的抗蚀剂组合物，其包括：（A）包含（a1）碱可溶性结构单元的聚合物，其各自包含具有（i）氟原子或氟代烷基的脂环族基团和（ii）醇羟基基团，其中聚合物由于酸的作用而改变碱溶解度; 和（B）由于曝光而产生酸的酸发生剂，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。通过抗蚀剂组合物或方法，可以避免浸渍液体的不利影响，同时实现高分辨率和高焦度聚焦。

6. 发明申请

US20050130056A1 Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound 失效
标题翻译：含高分子化合物的高分子化合物，抗蚀剂组合物和溶解抑制剂
公开(公告)号：US20050130056A1
公开(公告)日：2005-06-16
申请号：US10501459
申请日：2003-11-28
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Hideo Hada , Ryoichi Takasu , Mitsuru Sato
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Hideo Hada , Ryoichi Takasu , Mitsuru Sato
IPC分类号： C08F16/24 , C08F20/22 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/494
CPC分类号： G03F7/0046 , C08F20/22 , G03F7/0397 , Y10S430/108
摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.
摘要翻译：提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。为了确保耐蚀刻性，将脂环族基团引入侧链部分。脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。作为脂环基，优选使用多环基。通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

7. 发明申请

US20080193871A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern 审中-公开
标题翻译：浸渍曝光的正抗蚀组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080193871A1
公开(公告)日：2008-08-14
申请号：US11577003
申请日：2005-09-30
申请人： Toshiyuki Ogata , Hiromitsu Tsuji , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Hiromitsu Tsuji , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0397
摘要： A positive resist composition for immersion exposure that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the resin component (A) includes a resin (A1) that has alkali-soluble groups (i) having a hydrogen atom, and in a portion of these alkali-soluble groups (i), the hydrogen atom is substituted with an acid-dissociable, dissolution-inhibiting group (I) represented by a general formula (I) shown below [wherein, Z represents an aliphatic cyclic group; n represents either 0 or an integer from 1 to 3; and R1 and R2 each represent, independently, a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms].
摘要翻译：一种用于浸渍曝光的正型抗蚀剂组合物，包括在酸作用下表现出增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分（A）包括树脂（i）具有氢原子的碱溶性基团（A1），并且在这些碱溶性基团（i）的一部分中，氢原子被酸解离的溶解抑制基团（I）取代，通式（I）表示的化合物[式中，Z表示脂肪族环状基团， n表示0或1至3的整数; 和R 1和R 2各自独立地表示氢原子或1-5个碳原子的低级烷基]。

8. 发明申请

US20060166130A1 Photoresist composition and method for forming resist pattern using the same 失效
标题翻译：光刻胶组合物及其形成方法
公开(公告)号：US20060166130A1
公开(公告)日：2006-07-27
申请号：US10547427
申请日：2004-03-24
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
IPC分类号： G03C1/76
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.
摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D）或更少的碳原子或铵盐（d3）。该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

9. 发明授权

US07924400B2 Method for measuring liquid immersion lithography soluble fraction in organic film 有权
$Method for measuring liquid immersion lithography soluble fraction in organic film$
标题翻译：有机膜中液浸光刻可溶级分的测定方法
公开(公告)号：US07924400B2
公开(公告)日：2011-04-12
申请号：US12067925
申请日：2006-09-25
申请人： Nobuyuki Kohda , Masaaki Yoshida , Takayuki Yajima , Hiromitsu Tsuji
发明人： Nobuyuki Kohda , Masaaki Yoshida , Takayuki Yajima , Hiromitsu Tsuji
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G01N1/02 , G01N2001/028 , G01N2013/003 , G03F7/2041 , G03F7/70341 , G03F7/70608
摘要： A method for measuring a liquid immersion lithography soluble fraction in an organic film including a mounting step of mounting a droplet of a liquid immersion medium for liquid immersion lithography on a surface of an organic film formed on a substrate; and a transfer step of transferring a component in the organic film into the droplet.
摘要翻译：一种用于测量有机膜中的液浸光刻可溶部分的方法，包括将用于液浸光刻的液浸介质液滴安装在形成在基板上的有机膜的表面上的安装步骤; 以及将有机膜中的成分转移到液滴中的转印步骤。

10. 发明申请

US20110056511A1 Cleaning liquid and a cleaning method 有权
标题翻译：清洗液和清洁方法
公开(公告)号：US20110056511A1
公开(公告)日：2011-03-10
申请号：US12662760
申请日：2010-05-03
申请人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
发明人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
IPC分类号： B08B7/00 , C11D3/43 , C11D3/44
CPC分类号： C11D1/72 , C11D1/667 , C11D1/722 , C11D3/43 , C11D11/0047 , G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production.Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
摘要翻译：问题：提供具有优良倾斜能力的清洗液和清洗方法。在液浸光刻的过程中，它们可以防止由光致抗蚀剂释放到光曝光装置上的组分引起的损伤; 废物处理容易; 用于液浸光刻介质的清洁液的替代效率高，并且降低了生产成本，而不会降低半导体生产中的生产量。解决方法：在液浸光刻工艺中用于清洗曝光装置的清洗液，其包含至少5质量％的含有至少一种选自乙烯氧基，丙烯氧基和聚甘油基团和余量的水; 和使用它的清洁方法。

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