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    • 2. 发明申请
    • Bidirectional ESD Power Clamp
    • 双向ESD电源钳位
    • US20100142105A1
    • 2010-06-10
    • US12630170
    • 2009-12-03
    • Dimitri LintenSteven ThijsDavid Eric TremouillesNatarajan Mahadeva Iyer
    • Dimitri LintenSteven ThijsDavid Eric TremouillesNatarajan Mahadeva Iyer
    • H02H9/04
    • H01L27/0285
    • The disclosed method and device relates to a bidirectional ESD power clamp, comprising a semiconductor structure (BigNFET; BigPFET) having a conductive path connected between first and second nodes and having a triggering node via which the conductive path can be triggered. An ESD transient detection circuit is connected between the first and second nodes and to the triggering node and comprises a first part for detecting an occurrence of a first ESD transient on the first node. The semiconductor structure is provided on an insulator substrate, such that a parasitic conductive path between said first and second nodes via the substrate is avoided. The ESD transient detection circuit further comprises a second part for detecting an occurrence of a second ESD transient on the second node.
    • 所公开的方法和装置涉及双向ESD功率钳位,其包括半导体结构(BigNFET; BigPFET),其具有连接在第一和第二节点之间的导电路径,并且具有触发节点,通过该触发节点可以触发导电路径。 ESD瞬变检测电路连接在第一和第二节点与触发节点之间,并且包括用于检测第一节点上的第一ESD瞬变的发生的第一部分。 半导体结构设置在绝缘体基板上,使得避免了经由基板的所述第一和第二节点之间的寄生导电路径。 ESD瞬态检测电路还包括用于检测第二节点上的第二ESD瞬态的发生的第二部分。
    • 3. 发明授权
    • Method for calibrating an electrostatic discharge tester
    • 校准静电放电测试仪的方法
    • US07821272B2
    • 2010-10-26
    • US12051749
    • 2008-03-19
    • Mirko ScholzDavid Eric TremouillesSteven ThijsDimitri Linten
    • Mirko ScholzDavid Eric TremouillesSteven ThijsDimitri Linten
    • G01R35/00G01R27/02
    • G01R31/002G01R35/005
    • The present disclosure relates to a method for calibrating transient behaviour of an electrostatic discharge (ESD) test system. The system includes an ESD pulse generator and probe needles for applying a predetermined pulse on a device under test. The probe needles are connected to the ESD pulse generator via conductors. The test system includes measurement equipment for detecting transient behaviour of the device under test by simultaneously capturing voltage and current waveforms the device as a result of the pulse. The method includes the steps of: (a) applying the ESD test system on a first known system with a first known impedance, (b) applying the ESD test system on a second known system with a known second impedance, and (c) determining calibration data for the transient behaviour the ESD test system on the basis of captured voltage and current waveforms, taking into account said known first and second impedances. In preferred embodiments the waveforms are transferred to the frequency domain for correlation.
    • 本公开涉及一种用于校准静电放电(ESD)测试系统的瞬态特性的方法。 该系统包括用于在被测器件上施加预定脉冲的ESD脉冲发生器和探针。 探针通过导体连接到ESD脉冲发生器。 该测试系统包括用于通过同时捕获脉冲结果的电压和电流波形来检测被测器件的瞬态特性的测量设备。 该方法包括以下步骤:(a)将ESD测试系统应用于具有第一已知阻抗的第一已知系统上,(b)将ESD测试系统应用于具有已知第二阻抗的第二已知系统上,以及(c)确定 考虑到所述已知的第一和第二阻抗,基于捕获的电压和电流波形,ESD测试系统的瞬态特性的校准数据。 在优选实施例中,波形被传送到频域以进行相关。
    • 5. 发明申请
    • Design Methodology for MuGFET ESD Protection Devices
    • MuGFET ESD保护器件的设计方法
    • US20090280582A1
    • 2009-11-12
    • US12437294
    • 2009-05-07
    • Steven ThijsDimitri LintenDavid Eric Tremouilles
    • Steven ThijsDimitri LintenDavid Eric Tremouilles
    • H01L21/66
    • H01L27/0248H01L29/66795
    • A method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by said manufacturing process and a second set are variable, selecting multiple combinations of possible layout and process parameter values which meet predetermined ESD constraints; determining an optimum value for at least one other parameter in view of a predetermined design target apart from the predetermined ESD constraints; determining values for fin width (Wfin), gate length (LG) and number of fins (N) on the basis of the optimum value; and manufacturing said MuGFET ESD protection device using the given manufacturing and process values.
    • 一种通过给定的制造工艺制造具有给定布局的MuGFET ESD保护装置的方法,所述方法包括:通过所述制造过程选择第一组固定的多个相互依赖的布局和工艺参数,第二组是可变的,选择 可能的布局和过程参数值的多种组合满足预定的ESD约束; 鉴于除了预定的ESD约束之外的预定设计目标,确定至少一个其他参数的最佳值; 基于最佳值确定翅片宽度(Wfin),栅极长度(LG)和翅片数(N)的值; 并使用给定的制造和过程值制造所述MuGFET ESD保护装置。
    • 6. 发明申请
    • Method for Calibrating an Electrostatic Discharge Tester
    • 校准静电放电测试仪的方法
    • US20090027063A1
    • 2009-01-29
    • US12051749
    • 2008-03-19
    • Mirko ScholzDavid Eric TremouillesSteven ThijsDimitri Linten
    • Mirko ScholzDavid Eric TremouillesSteven ThijsDimitri Linten
    • G01R35/00
    • G01R31/002G01R35/005
    • The present disclosure relates to a method for calibrating transient behaviour of an electrostatic discharge (ESD) test system. The system includes an ESD pulse generator and probe needles for applying a predetermined pulse on a device under test. The probe needles are connected to the ESD pulse generator via conductors. The test system includes measurement equipment for detecting transient behaviour of the device under test by simultaneously capturing voltage and current waveforms the device as a result of the pulse. The method comprises the steps of: (a) applying the ESD test system on a first known system with a first known impedance, (b) applying the ESD test system on a second known system with a known second impedance, and (c) determining calibration data for the transient behaviour the ESD test system on the basis of captured voltage and current waveforms, taking into account said known first and second impedances. In preferred embodiments the waveforms are transferred to the frequency domain for correlation.
    • 本公开涉及一种用于校准静电放电(ESD)测试系统的瞬态特性的方法。 该系统包括用于在被测器件上施加预定脉冲的ESD脉冲发生器和探针。 探针通过导体连接到ESD脉冲发生器。 该测试系统包括用于通过同时捕获脉冲结果的电压和电流波形来检测被测器件的瞬态特性的测量设备。 该方法包括以下步骤:(a)将ESD测试系统应用于具有第一已知阻抗的第一已知系统上,(b)将ESD测试系统应用于具有已知第二阻抗的第二已知系统上,以及(c)确定 考虑到所述已知的第一和第二阻抗,基于捕获的电压和电流波形,ESD测试系统的瞬态特性的校准数据。 在优选实施例中,波形被传送到频域以进行相关。