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1. 发明申请

US20110051300A1 Method for Providing Wideband Electrostatic Discharge Protection and Circuits Obtained Therewith 有权
标题翻译：提供宽带静电放电保护和电路的方法
公开(公告)号：US20110051300A1
公开(公告)日：2011-03-03
申请号：US12869444
申请日：2010-08-26
申请人： Steven Thijs , Dimitri Linten
发明人： Steven Thijs , Dimitri Linten
IPC分类号： H02H9/00
CPC分类号： H03F3/607 , H03F1/523
摘要： An distributed electronic circuit (1), such as a transmission line or distributed amplifier, is disclosed comprising an input terminal (2), an output terminal (3), power supply lines (4,5), a sequence of sections (61, 62, 63, 64, 65), between the input terminal (2) and the output terminal (3), arranged to transfer an electrical signal from one section to another section; each section (61, 62, 63, 64, 65) comprising at least one Electro Static Discharge (ESD) protection component (9) configured to, upon occurrence of an ESD event, convey corresponding ESD currents to a power supply line (4, 5); and wherein the ESD components (9) of the respective sections (61, 62, 63, 64, 65) are selected such that, upon occurrence of an ESD event, at least one subsequent section (62, 63, 64, 65) is triggered before the first section (61).
摘要翻译：公开了一种诸如传输线或分布式放大器的分布式电子电路（1），包括输入端（2），输出端（3），电源线（4,5），一段（61，在输入端子（2）和输出端子（3）之间布置成将电信号从一个部分传送到另一个部分; 包括至少一个静电放电（ESD）保护部件（9）的每个部分（61,62,63,64,65），其被配置为在发生ESD事件时将相应的ESD电流传送到电源线（4， 5）; 并且其中选择各个部分（61,62,63,64,65）的ESD部件（9），使得在发生ESD事件时，至少一个后续部分（62,63,64,65）是在第一节之前触发（61）。

2. 发明授权

US08339146B2 Method for calibrating a transmission line pulse test system 有权
标题翻译：传输线脉冲测试系统的校准方法
公开(公告)号：US08339146B2
公开(公告)日：2012-12-25
申请号：US12643608
申请日：2009-12-21
申请人： Philippe Roussel , Dimitri Linten
发明人： Philippe Roussel , Dimitri Linten
IPC分类号： G01R27/02
CPC分类号： G01R35/005 , G01R31/002 , G01R31/021
摘要： Calibration method for calibrating transient behavior of a TLP test system. The system comprises a TLP generator, probe needles, nominally impedance matched transmission lines and measurement equipment, connected between the transmission lines and the TLP generator, for detecting transient behavior of a device under test by simultaneously capturing voltage and current waveforms as a result of generated pulses. The calibration method comprises (a) applying the TLP test system on an open and capturing first voltage and current waveforms; (b) applying the TLP test system on a calibration element having a known finite impedance and a known transient response and capturing second voltage and current waveforms; (c) transforming the captured first and second current and voltage waveforms to the frequency domain, and (d) determining calibration data for the transient behavior of the TLP test system on the basis of the transformed first and second voltage and current waveforms.
摘要翻译：用于校准TLP测试系统的瞬态特性的校准方法。该系统包括连接在传输线路和TLP发生器之间的TLP发生器，探针，标称阻抗匹配传输线路和测量设备，用于通过同时捕获电压和电流波形来产生被测器件的瞬态特性，由此产生脉冲。校准方法包括：（a）将TLP测试系统应用于开路和捕获第一电压和电流波形; （b）将TLP测试系统应用于具有已知有限阻抗和已知瞬态响应的校准元件并捕获第二电压和电流波形; （c）将捕获的第一和第二电流和电压波形转换到频域，以及（d）基于变换的第一和第二电压和电流波形确定TLP测试系统的瞬态特性的校准数据。

3. 发明申请

US20100156447A1 Method for Calibrating a Transmission Line Pulse Test System 有权
标题翻译：用于校准传输线脉冲测试系统的方法
公开(公告)号：US20100156447A1
公开(公告)日：2010-06-24
申请号：US12643608
申请日：2009-12-21
申请人： Philippe Roussel , Dimitri Linten
发明人： Philippe Roussel , Dimitri Linten
IPC分类号： G01R31/02 , G01R35/00
CPC分类号： G01R35/005 , G01R31/002 , G01R31/021
摘要： Calibration method for calibrating transient behaviour of a TLP test system. The system comprises a TLP generator, probe needles, nominally impedance matched transmission lines and measurement equipment, connected between the transmission lines and the TLP generator, for detecting transient behaviour of a device under test by simultaneously capturing voltage and current waveforms as a result of generated pulses. The calibration method comprises (a) applying the TLP test system on an open and capturing first voltage and current waveforms; (b) applying the TLP test system on a calibration element having a known finite impedance and a known transient response and capturing second voltage and current waveforms; (c) transforming the captured first and second current and voltage waveforms to the frequency domain, and (d) determining calibration data for the transient behaviour of the TLP test system on the basis of the transformed first and second voltage and current waveforms.
摘要翻译：用于校准TLP测试系统的瞬态特性的校准方法。该系统包括连接在传输线路和TLP发生器之间的TLP发生器，探针，标称阻抗匹配传输线路和测量设备，用于通过同时捕获电压和电流波形来产生被测器件的瞬态特性，由此产生脉冲。校准方法包括：（a）将TLP测试系统应用于开路和捕获第一电压和电流波形; （b）将TLP测试系统应用于具有已知有限阻抗和已知瞬态响应的校准元件并捕获第二电压和电流波形; （c）将捕获的第一和第二电流和电压波形转换到频域，以及（d）基于变换的第一和第二电压和电流波形确定TLP测试系统的瞬态特性的校准数据。

4. 发明授权

US08508893B2 Method for providing wideband electrostatic discharge protection and circuits obtained therewith 有权
标题翻译：提供宽带静电放电保护的方法及其获得的电路
公开(公告)号：US08508893B2
公开(公告)日：2013-08-13
申请号：US12869444
申请日：2010-08-26
申请人： Steven Thijs , Dimitri Linten
发明人： Steven Thijs , Dimitri Linten
IPC分类号： H02H3/08 , H02H9/02
CPC分类号： H03F3/607 , H03F1/523
摘要： An distributed electronic circuit (1), such as a transmission line or distributed amplifier, is disclosed comprising an input terminal (2), an output terminal (3), power supply lines (4,5), a sequence of sections (61, 62, 63, 64, 65), between the input terminal (2) and the output terminal (3), arranged to transfer an electrical signal from one section to another section; each section (61, 62, 63, 64, 65) comprising at least one Electro Static Discharge (ESD) protection component (9) configured to, upon occurrence of an ESD event, convey corresponding ESD currents to a power supply line (4, 5); and wherein the ESD components (9) of the respective sections (61, 62, 63, 64, 65) are selected such that, upon occurrence of an ESD event, at least one subsequent section (62, 63, 64, 65) is triggered before the first section (61).
摘要翻译：公开了一种诸如传输线或分布式放大器的分布式电子电路（1），包括输入端（2），输出端（3），电源线（4,5），一段（61，在输入端子（2）和输出端子（3）之间布置成将电信号从一个部分传送到另一个部分; 包括至少一个静电放电（ESD）保护部件（9）的每个部分（61,62,63,64,65），其被配置为在发生ESD事件时将相应的ESD电流传送到电源线（4， 5）; 并且其中选择各个部分（61,62,63,64,65）的ESD部件（9），使得在发生ESD事件时，至少一个后续部分（62,63,64,65）是在第一节之前触发（61）。

5. 发明授权

US07821272B2 Method for calibrating an electrostatic discharge tester 有权
标题翻译：校准静电放电测试仪的方法
公开(公告)号：US07821272B2
公开(公告)日：2010-10-26
申请号：US12051749
申请日：2008-03-19
申请人： Mirko Scholz , David Eric Tremouilles , Steven Thijs , Dimitri Linten
发明人： Mirko Scholz , David Eric Tremouilles , Steven Thijs , Dimitri Linten
IPC分类号： G01R35/00 , G01R27/02
CPC分类号： G01R31/002 , G01R35/005
摘要： The present disclosure relates to a method for calibrating transient behaviour of an electrostatic discharge (ESD) test system. The system includes an ESD pulse generator and probe needles for applying a predetermined pulse on a device under test. The probe needles are connected to the ESD pulse generator via conductors. The test system includes measurement equipment for detecting transient behaviour of the device under test by simultaneously capturing voltage and current waveforms the device as a result of the pulse. The method includes the steps of: (a) applying the ESD test system on a first known system with a first known impedance, (b) applying the ESD test system on a second known system with a known second impedance, and (c) determining calibration data for the transient behaviour the ESD test system on the basis of captured voltage and current waveforms, taking into account said known first and second impedances. In preferred embodiments the waveforms are transferred to the frequency domain for correlation.
摘要翻译：本公开涉及一种用于校准静电放电（ESD）测试系统的瞬态特性的方法。该系统包括用于在被测器件上施加预定脉冲的ESD脉冲发生器和探针。探针通过导体连接到ESD脉冲发生器。该测试系统包括用于通过同时捕获脉冲结果的电压和电流波形来检测被测器件的瞬态特性的测量设备。该方法包括以下步骤：（a）将ESD测试系统应用于具有第一已知阻抗的第一已知系统上，（b）将ESD测试系统应用于具有已知第二阻抗的第二已知系统上，以及（c）确定考虑到所述已知的第一和第二阻抗，基于捕获的电压和电流波形，ESD测试系统的瞬态特性的校准数据。在优选实施例中，波形被传送到频域以进行相关。

6. 发明授权

US07649722B2 Electrostatic discharge protected circuits 有权
标题翻译：静电放电保护电路
公开(公告)号：US07649722B2
公开(公告)日：2010-01-19
申请号：US11521293
申请日：2006-09-14
申请人： Steven Thijs , Natarajan Mahadeva Iyer , Dimitri Linten
发明人： Steven Thijs , Natarajan Mahadeva Iyer , Dimitri Linten
IPC分类号： H02H9/00 , H02H3/08
CPC分类号： H03F1/223 , H01L27/0251 , H03F1/52 , H03F1/523 , H03F3/191 , H03F3/195 , H03F3/605 , H03F2200/294 , H03F2200/451 , H03F2200/489
摘要： A method for designing an ESD protected analog circuit is described. The method includes creating an analog circuit design comprising a plurality of interconnected functional components and circuit-level ESD protection components with predetermined electric properties for achieving a predetermined analog performance during normal operation of the circuit as well as a predetermined ESD robustness during an ESD event on the circuit. At least one ESD event is simulated on the analog circuit design to identify at least one weak spot in the circuit. Component-level ESD protection components are added into the analog circuit design around each identified weak spot to reduce failure of the weak spot during an ESD event.
摘要翻译：描述了一种用于设计ESD保护的模拟电路的方法。该方法包括创建模拟电路设计，其包括具有预定电特性的多个互连功能部件和电路级ESD保护部件的模拟电路设计，以在电路的正常操作期间实现预定的模拟性能以及在ESD事件期间预定的ESD稳健性电路。在模拟电路设计中模拟至少一个ESD事件，以识别电路中的至少一个弱点。组件级ESD保护组件被添加到围绕每个识别的弱点的模拟电路设计中，以减少ESD事件期间弱点的故障。

7. 发明申请

US20110051301A1 Method for Designing Integrated Electronic Circuits Having Electrostatic Discharge Protection and Circuits Obtained Thereof 审中-公开
标题翻译：设计具有静电放电保护和电路的集成电子电路的方法
公开(公告)号：US20110051301A1
公开(公告)日：2011-03-03
申请号：US12869318
申请日：2010-08-26
申请人： Steven Thijs , Dimitri Linten
发明人： Steven Thijs , Dimitri Linten
IPC分类号： H02H9/00 , G06F17/50
CPC分类号： H01L27/0285
摘要： A method for designing an integrated electronic circuit (1) having Electro Static Discharge (ESD) protection, the method comprising providing an integrated electronic circuit (1) having a predetermined performance during normal operation of the circuit, the integrated electronic circuit (1) comprising a power supply line (2) and at least one active device (4) protected by an ESD protection device (5), the active device (4) being powered from the power supply line (2), simulating an ESD event on the integrated electronic circuit (1) to determine if and where, during the ESD event, a parasitic ESD current path is created between the power supply line (2) and the at least one active device (4), and creating in thus determined parasitic ESD current path a circuit (6) to interrupt this parasitic ESD current path, at least during part of the ESD event.
摘要翻译：一种用于设计具有静电放电（ESD）保护的集成电子电路（1）的方法，所述方法包括提供在电路的正常操作期间具有预定性能的集成电子电路（1），所述集成电子电路（1）包括电源线（2）和由ESD保护装置（5）保护的至少一个有源器件（4），所述有源器件（4）从电源线（2）供电，模拟集成的ESD 电子电路（1），以确定在ESD事件期间是否和何处在电源线（2）和至少一个有源器件（4）之间产生寄生ESD电流路径，并产生如此确定的寄生ESD电流至少在部分ESD事件期间，路径电路（6）中断该寄生ESD电流路径。

8. 发明申请

US20090280582A1 Design Methodology for MuGFET ESD Protection Devices 有权
标题翻译： MuGFET ESD保护器件的设计方法
公开(公告)号：US20090280582A1
公开(公告)日：2009-11-12
申请号：US12437294
申请日：2009-05-07
申请人： Steven Thijs , Dimitri Linten , David Eric Tremouilles
发明人： Steven Thijs , Dimitri Linten , David Eric Tremouilles
IPC分类号： H01L21/66
CPC分类号： H01L27/0248 , H01L29/66795
摘要： A method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by said manufacturing process and a second set are variable, selecting multiple combinations of possible layout and process parameter values which meet predetermined ESD constraints; determining an optimum value for at least one other parameter in view of a predetermined design target apart from the predetermined ESD constraints; determining values for fin width (Wfin), gate length (LG) and number of fins (N) on the basis of the optimum value; and manufacturing said MuGFET ESD protection device using the given manufacturing and process values.
摘要翻译：一种通过给定的制造工艺制造具有给定布局的MuGFET ESD保护装置的方法，所述方法包括：通过所述制造过程选择第一组固定的多个相互依赖的布局和工艺参数，第二组是可变的，选择可能的布局和过程参数值的多种组合满足预定的ESD约束; 鉴于除了预定的ESD约束之外的预定设计目标，确定至少一个其他参数的最佳值; 基于最佳值确定翅片宽度（Wfin），栅极长度（LG）和翅片数（N）的值; 并使用给定的制造和过程值制造所述MuGFET ESD保护装置。

9. 发明申请

US20070058308A1 Electrostatic discharge protected circuits 有权
标题翻译：静电放电保护电路
公开(公告)号：US20070058308A1
公开(公告)日：2007-03-15
申请号：US11521293
申请日：2006-09-14
申请人： Steven Thijs , Natarajan Mahadeva Iyer , Dimitri Linten
发明人： Steven Thijs , Natarajan Mahadeva Iyer , Dimitri Linten
IPC分类号： H02H9/00
CPC分类号： H03F1/223 , H01L27/0251 , H03F1/52 , H03F1/523 , H03F3/191 , H03F3/195 , H03F3/605 , H03F2200/294 , H03F2200/451 , H03F2200/489
摘要： A method for designing an ESD protected analog circuit is described. The method includes creating an analog circuit design comprising a plurality of interconnected functional components and circuit-level ESD protection components with predetermined electric properties for achieving a predetermined analog performance during normal operation of the circuit as well as a predetermined ESD robustness during an ESD event on the circuit. At least one ESD event is simulated on the analog circuit design to identify at least one weak spot in the circuit. Component-level ESD protection components are added into the analog circuit design around each identified weak spot to reduce failure of the weak spot during an ESD event.
摘要翻译：描述了一种用于设计ESD保护的模拟电路的方法。该方法包括创建模拟电路设计，其包括具有预定电特性的多个互连功能部件和电路级ESD保护部件的模拟电路设计，以在电路的正常操作期间实现预定的模拟性能以及在ESD事件期间预定的ESD稳健性电路。在模拟电路设计中模拟至少一个ESD事件，以识别电路中的至少一个弱点。组件级ESD保护组件被添加到围绕每个识别的弱点的模拟电路设计中，以减少ESD事件期间弱点的故障。

10. 发明授权

US07923266B2 Design methodology for MuGFET ESD protection devices 有权
标题翻译： MuGFET ESD保护装置的设计方法
公开(公告)号：US07923266B2
公开(公告)日：2011-04-12
申请号：US12437294
申请日：2009-05-07
申请人： Steven Thijs , Dimitri Linten , David Eric Trémouilles
发明人： Steven Thijs , Dimitri Linten , David Eric Trémouilles
IPC分类号： H01L21/66 , H01L21/332 , H01L21/00 , H01L21/84 , H01L21/336
CPC分类号： H01L27/0248 , H01L29/66795
摘要： A method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by said manufacturing process and a second set are variable, selecting multiple combinations of possible layout and process parameter values which meet predetermined ESD constraints; determining an optimum value for at least one other parameter in view of a predetermined design target apart from the predetermined ESD constraints; determining values for fin width (Wfin), gate length (LG) and number of fins (N) on the basis of the optimum value; and manufacturing said MuGFET ESD protection device using the given manufacturing and process values.
摘要翻译：一种通过给定的制造工艺制造具有给定布局的MuGFET ESD保护装置的方法，所述方法包括：通过所述制造过程选择第一组固定的多个相互依赖的布局和工艺参数，第二组是可变的，选择可能的布局和过程参数值的多种组合满足预定的ESD约束; 鉴于除了预定的ESD约束之外的预定设计目标，确定至少一个其他参数的最佳值; 基于最佳值确定翅片宽度（Wfin），栅极长度（LG）和翅片数（N）的值; 并使用给定的制造和过程值制造所述MuGFET ESD保护装置。

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