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1. 发明申请

US20080200038A1 Heat processing method and apparatus for semiconductor process 失效
标题翻译：半导体工艺的热处理方法和装置
公开(公告)号：US20080200038A1
公开(公告)日：2008-08-21
申请号：US12068452
申请日：2008-02-06
申请人： Toshiyuki Ikeuchi , Kota Umezawa , Tetsuya Shibata
发明人： Toshiyuki Ikeuchi , Kota Umezawa , Tetsuya Shibata
IPC分类号： H01L21/316 , C23C16/44 , B05C11/00
CPC分类号： C23C8/34 , C23C8/12 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/3145 , H01L21/31662
摘要： A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.
摘要翻译：用于半导体工艺的热处理方法包括在处理容器的处理区域内放置沿垂直方向间隔堆叠的多个目标衬底。目标基板中的每一个在其表面上包括处理对象层。然后，该方法包括在加工过程场的同时向工艺场提供氧化气体和脱氧气体，从而使氧化气体和脱氧气体彼此反应以产生氧自由基和羟基自由基，并进行氧化通过使用氧自由基和羟基自由基的目标底物的工艺对象层。然后，该方法包括在含有臭氧或氧化自由基的退火气体的气氛中加热由氧化处理的工艺物体层，从而对加工对象层进行退火。

2. 发明授权

US07605095B2 Heat processing method and apparatus for semiconductor process 失效
标题翻译：半导体工艺的热处理方法和装置
公开(公告)号：US07605095B2
公开(公告)日：2009-10-20
申请号：US12068452
申请日：2008-02-06
申请人： Toshiyuki Ikeuchi , Kota Umezawa , Tetsuya Shibata
发明人： Toshiyuki Ikeuchi , Kota Umezawa , Tetsuya Shibata
IPC分类号： H01L21/8238 , H01L21/469 , H01L21/31
CPC分类号： C23C8/34 , C23C8/12 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/3145 , H01L21/31662
摘要： A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.
摘要翻译：用于半导体工艺的热处理方法包括在处理容器的处理区域内放置沿垂直方向间隔堆叠的多个目标衬底。目标基板中的每一个在其表面上包括处理对象层。然后，该方法包括在加工过程场的同时向工艺场供给氧化气体和脱氧气体，从而使氧化气体和脱氧气体相互反应，生成氧自由基和羟基自由基，进行氧化通过使用氧自由基和羟基自由基的目标底物的工艺对象层。然后，该方法包括在含有臭氧或氧化自由基的退火气体的气氛中加热由氧化处理的工艺物体层，从而对加工对象层进行退火。

3. 发明授权

US07981809B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07981809B2
公开(公告)日：2011-07-19
申请号：US11298607
申请日：2005-12-12
申请人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
发明人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译：用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤反应室内目标衬底上的氮氧化硅膜。预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

4. 发明申请

US20060128161A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20060128161A1
公开(公告)日：2006-06-15
申请号：US11298607
申请日：2005-12-12
申请人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
发明人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译：用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤反应室内目标衬底上的氮氧化硅膜。预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

5. 发明授权

US08279133B2 Antenna device 失效
标题翻译：天线设备
公开(公告)号：US08279133B2
公开(公告)日：2012-10-02
申请号：US12712503
申请日：2010-02-25
申请人： Hideaki Shimoda , Tetsuya Shibata , Kei Suzuki
发明人： Hideaki Shimoda , Tetsuya Shibata , Kei Suzuki
IPC分类号： H01Q1/50 , H01Q1/38
CPC分类号： H01Q1/38 , H01Q1/243 , H01Q9/42
摘要： An antenna device is provided with an antenna element including a base, an inductance adjustment pattern that is formed on the upper surface and a side surface of the base and has a substantially U-shape, a capacitance adjustment pattern that is formed on the upper surface of the base and is placed to face the inductance adjustment pattern, and first to third terminal electrodes provided on the bottom surface of the base. The antenna element is installed between the first side and the second side of the ground pattern that form the two facing sides of the antenna mounting region. One end of the inductance adjustment pattern is connected to the feed line, the other end of the inductance adjustment pattern is connected to the first side of the ground pattern, and the third terminal electrode is connected to the second side of the ground pattern.
摘要翻译：天线装置设置有天线元件，天线元件包括基座，电感调节图案，其形成在基座的上表面和侧面，并具有大致U形;电容调整图案，形成在上表面并且被放置成面对电感调节图案，以及设置在基座的底表面上的第一至第三端子电极。天线元件安装在形成天线安装区域的两个相对侧的接地图案的第一侧和第二侧之间。电感调整图案的一端连接到馈电线，电感调节图案的另一端连接到接地图案的第一侧，并且第三端子电极连接到接地图案的第二侧。

6. 发明申请

US20120199827A1 THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管电路基板及其制造方法
公开(公告)号：US20120199827A1
公开(公告)日：2012-08-09
申请号：US13329545
申请日：2011-12-19
申请人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
发明人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.
摘要翻译：根据一个实施例，制造薄膜晶体管电路衬底的方法包括在绝缘衬底上形成氧化物半导体薄膜，形成栅极绝缘膜和栅电极，所述栅极绝缘膜和栅电极层叠在氧化物半导体薄膜的第一区域上并且从所述栅极绝缘膜暴露所述氧化物半导体薄膜的第二区域和第三区域，所述第二区域和所述第三区域位于所述氧化物半导体薄膜的所述第一区域的两侧，形成层间绝缘膜包括硅的悬挂键，覆盖第二区域的层间绝缘膜和氧化物半导体薄膜的第三区域，栅极绝缘膜和栅电极，以及形成源电极和漏电极。

7. 发明授权

US07879397B2 Method for processing polysilazane film 有权
标题翻译：聚硅氮烷薄膜的加工方法
公开(公告)号：US07879397B2
公开(公告)日：2011-02-01
申请号：US11987134
申请日：2007-11-27
申请人： Masahisa Watanabe , Tetsuya Shibata
发明人： Masahisa Watanabe , Tetsuya Shibata
IPC分类号： C23C16/00 , B05D3/00 , B05D3/02 , B05D3/04
CPC分类号： H01L21/316 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/76826 , H01L21/76828
摘要： A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
摘要翻译：一种加工聚硅氮烷薄膜的方法包括：将设置在其上的聚硅氮烷涂膜的目标基板的反应容器的处理区域从预热温度改变到预定温度，同时设定处理场成为含有氧并且具有6.7至26.7kPa的第一压力的第一气氛。然后，该方法包括通过在不低于预定温度的第一工艺温度下烘烤涂膜来进行第一热处理，以获得含有硅和氧的绝缘膜，同时将工艺场设定为含有氧化气体的第二气氛并且具有高于第一压力的第二压力。

8. 发明申请

US20100240854A1 PRE-EXPANDED POLYPROPYLENE RESIN PARTICLE, AND METHOD FOR PRODUCTION THEREOF 有权
标题翻译：预扩展聚丙烯树脂颗粒及其生产方法
公开(公告)号：US20100240854A1
公开(公告)日：2010-09-23
申请号：US12680770
申请日：2008-09-29
申请人： Tetsuya Minami , Tetsuya Shibata , Hidekazu Oohara
发明人： Tetsuya Minami , Tetsuya Shibata , Hidekazu Oohara
IPC分类号： C08F110/06 , B29B9/16
CPC分类号： C08J9/18 , B29C44/3461 , C08J9/0061 , C08J2203/06 , C08J2203/14 , C08J2323/12 , C08J2423/00
摘要： A pre-expanded polypropylene resin particle can be produced in the following manner: a polypropylene resin particle produced by an under water cut method, water, a dispersing agent, and a foaming agent are charged in a pressure-resistant container, the resulting mixture is heated to a temperature equal to or higher than the softening temperature of the polypropylene resin particle to allow the polypropylene resin particle to be impregnated with the foaming agent under pressure, and the resulting product is released into the atmosphere having a pressure lower than the pressure of the inside of the pressure-resistant container. As the polypropylene resin composition, a composition is used which comprises 100 parts by weight of a polypropylene resin and 1 to 20 parts by weight of a polyethylene resin having a melt viscosity of 10 to 2000 mPa·s at 140° C., whereby it becomes possible to reduce the pressure of a heated molding vapor required for producing an in-mold expanded molding product having a fusion rate of 75% or higher.
摘要翻译：可以如下制造预发泡聚丙烯树脂颗粒：将通过水切割法制造的聚丙烯树脂颗粒，水，分散剂和发泡剂装入耐压容器中，得到的混合物为加热到等于或高于聚丙烯树脂颗粒的软化温度的温度，以使聚丙烯树脂颗粒在压力下浸渍发泡剂，并将所得产物释放到压力低于耐压容器的内部。作为聚丙烯树脂组合物，使用包含100重量份聚丙烯树脂和1〜20重量份在140℃下熔融粘度为10〜2000mPa·s的聚乙烯树脂的组合物，由此其可以降低制造熔融率为75％以上的模内发泡成型体所需的加热成型蒸气的压力。

9. 发明申请

US20090263975A1 FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL 有权
标题翻译：用于形成含金属的含硅绝缘膜的膜形成方法和装置
公开(公告)号：US20090263975A1
公开(公告)日：2009-10-22
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

10. 发明申请

US20080139001A1 Method for processing polysilazane film 有权
标题翻译：聚硅氮烷薄膜的加工方法
公开(公告)号：US20080139001A1
公开(公告)日：2008-06-12
申请号：US11987134
申请日：2007-11-27
申请人： Masahisa Watanabe , Tetsuya Shibata
发明人： Masahisa Watanabe , Tetsuya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/316 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/76826 , H01L21/76828
摘要： A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
摘要翻译：一种加工聚硅氮烷薄膜的方法包括：将设置在其上的聚硅氮烷涂膜的目标基板的反应容器的处理区域从预热温度改变到预定温度，同时设定处理场成为含有氧并且具有6.7至26.7kPa的第一压力的第一气氛。然后，该方法包括通过在不低于预定温度的第一工艺温度下烘烤涂膜来进行第一热处理，以获得含有硅和氧的绝缘膜，同时将工艺场设定为含有氧化气体的第二气氛并且具有高于第一压力的第二压力。

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