专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5550855A Optical modulator 失效
标题翻译：光调制器
公开(公告)号：US5550855A
公开(公告)日：1996-08-27
申请号：US237308
申请日：1994-05-03
申请人： Toshitaka Aoyagi , Hitoshi Watanabe , Yasunori Miyazaki , Kunihiko Isshiki
发明人： Toshitaka Aoyagi , Hitoshi Watanabe , Yasunori Miyazaki , Kunihiko Isshiki
IPC分类号： H01S5/06 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/0625 , H01S3/18
CPC分类号： H04B10/2507 , H01S5/0265 , H01S5/0625
摘要： In an optical modulator including a laser light source emitting laser light and a modulator, a modulation signal source for applying a modulation signal to the modulator, a signal processor for producing and outputting a signal in response to a change in the modulation signal, and a driving current source for generating a driving current applied to the laser light. Wavelength chirping modulation reverse to the wavelength chirping occurring in the modulator is produced in the light emitted from the laser by modulation of the driving current whereby wavelength chirping produced by the modulator is at least partially cancelled and wavelength chirping of the light output from the modulator is reduced.
摘要翻译：在包括发射激光的激光光源和调制器的光调制器中，用于向调制器施加调制信号的调制信号源，响应于调制信号的变化产生和输出信号的信号处理器，以及用于产生施加到激光的驱动电流的驱动电流源。通过调制驱动电流，在由激光器发出的光中产生与调制器中发生的波长啁啾相反的波长啁啾调制，由此调制器产生的波长啁啾至少部分被消除，并且来自调制器的光输出的波长啁啾是减少

2. 发明授权

US5790737A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US5790737A
公开(公告)日：1998-08-04
申请号：US695915
申请日：1996-08-12
申请人： Toshitaka Aoyagi , Yasunori Miyazaki
发明人： Toshitaka Aoyagi , Yasunori Miyazaki
IPC分类号： G02B6/42 , H01S5/02 , H01S5/042 , G02B6/10
CPC分类号： G02B6/4224 , H01S5/02268 , H01S5/0202 , H01S5/02272 , H01S5/0425 , H01S5/0655 , H01S5/2022 , H01S5/2223 , H01S5/2275
摘要： A semiconductor laser chip according to the present invention comprises: a p-type InP substrate; an InGaAsP active layer (optical waveguide) formed on said substrate; a p-n-p InP block layer formed on said substrate; a contact layer formed thereupon; an insulating film formed on said contact layer; a front surface electrode formed on said insulating film; a pair of alignment marks formed at the same time of the optical waveguide; and a back surface electrode formed on said substrate. The alignment marks are formed from the same material, i.e., the same crystal as said optical waveguide. Accordingly, it is possible to improve precision of the relative position between said optical waveguide and said alignment marks.
摘要翻译：根据本发明的半导体激光芯片包括：p型InP衬底; 形成在所述基板上的InGaAsP有源层（光波导）形成在所述衬底上的p-n-p InP阻挡层; 在其上形成接触层; 形成在所述接触层上的绝缘膜; 形成在所述绝缘膜上的前表面电极; 在光波导的同时形成的一对对准标记; 以及形成在所述基板上的背面电极。对准标记由与所述光波导相同的材料即相同的晶体形成。因此，可以提高所述光波导与所述对准标记之间的相对位置的精度。

3. 发明申请

US20080037605A1 OPTICAL WAVEGUIDE, SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT, AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：光波导，半导体光学集成元件及其制造方法
公开(公告)号：US20080037605A1
公开(公告)日：2008-02-14
申请号：US11775928
申请日：2007-07-11
申请人： Takeshi Yamatoya , Yasunori Miyazaki , Toshitaka Aoyagi
发明人： Takeshi Yamatoya , Yasunori Miyazaki , Toshitaka Aoyagi
IPC分类号： H01S5/026
CPC分类号： H01S5/026 , B82Y20/00 , H01S5/0265 , H01S5/1014 , H01S5/1032 , H01S5/22 , H01S5/3211 , H01S5/34306
摘要： An optical waveguide has a semiconductor laser section, an intermediate section, and an optical modulator section on a surface of a substrate. The distance of a surface extending outwardly from and transverse to both sides of a mesa stripe in the semiconductor laser section from the surface of the substrate is larger than the distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the optical modulator section from the surface of the substrate. The distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the intermediate section from the surface of the substrate decreases from the semiconductor laser section toward the optical modulator section.
摘要翻译：光波导在基板的表面上具有半导体激光部，中间部和光调制部。从半导体激光器部分的基板的台面条的两侧向外延伸的表面与基板的表面之间的距离大于沿着基板的台面条的两侧向外延伸的横截面的距离光学调制器部分。从中间部分的台阶条的两侧向外延伸的表面与基板的表面之间的距离从半导体激光部朝向光调制器部分减小。

4. 发明授权

US5906753A Method of making optical semi-conductor device 失效
标题翻译：制造光半导体器件的方法
公开(公告)号：US5906753A
公开(公告)日：1999-05-25
申请号：US961145
申请日：1997-10-30
申请人： Toshitaka Aoyagi , Yasunori Miyazaki
发明人： Toshitaka Aoyagi , Yasunori Miyazaki
IPC分类号： G02B6/42 , H01S5/02 , H01S5/042 , B44C1/22
CPC分类号： G02B6/4224 , H01S5/02268 , H01S5/0202 , H01S5/02272 , H01S5/0425 , H01S5/0655 , H01S5/2022 , H01S5/2223 , H01S5/2275
摘要： A method of manufacturing an optical semiconductor device including forming an optical waveguide on a substrate and forming an alignment mark on the substrate simultaneously with the optical waveguide. The alignment marks do not transmit infrared light and, when the substrate is mounted on an infrared transmissive submount, precise alignment can be achieved by observing transmitted light. Thus, the optical semiconductor device including the substrate is soldered at the desired location.
摘要翻译：一种制造光学半导体器件的方法，包括在衬底上形成光波导并与光波导同时在衬底上形成对准标记。对准标记不透射红外光，并且当将基板安装在红外透射底座上时，可以通过观察透射光来实现精确对准。因此，将包括基板的光学半导体器件焊接在期望的位置。

5. 发明授权

US07733934B2 Optical waveguide and semiconductor optical element 有权
标题翻译：光波导和半导体光学元件
公开(公告)号：US07733934B2
公开(公告)日：2010-06-08
申请号：US11775928
申请日：2007-07-11
申请人： Takeshi Yamatoya , Yasunori Miyazaki , Toshitaka Aoyagi
发明人： Takeshi Yamatoya , Yasunori Miyazaki , Toshitaka Aoyagi
IPC分类号： H01S5/00
CPC分类号： H01S5/026 , B82Y20/00 , H01S5/0265 , H01S5/1014 , H01S5/1032 , H01S5/22 , H01S5/3211 , H01S5/34306
摘要： An optical waveguide has a semiconductor laser section, an intermediate section, and an optical modulator section on a surface of a substrate. The distance of a surface extending outwardly from and transverse to both sides of a mesa stripe in the semiconductor laser section from the surface of the substrate is larger than the distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the optical modulator section from the surface of the substrate. The distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the intermediate section from the surface of the substrate decreases from the semiconductor laser section toward the optical modulator section.
摘要翻译：光波导在基板的表面上具有半导体激光部，中间部和光调制部。从半导体激光器部分的基板的台面条的两侧向外延伸的表面与基板的表面之间的距离大于沿着基板的台面条的两侧向外延伸的横截面的距离光学调制器部分。从中间部分的台阶条的两侧向外延伸的表面与基板的表面之间的距离从半导体激光部朝向光调制器部分减小。

6. 发明申请

US20090323164A1 OPTICAL MODULATION DEVICE AND OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学调制装置和光学半导体器件
公开(公告)号：US20090323164A1
公开(公告)日：2009-12-31
申请号：US12253286
申请日：2008-10-17
申请人： Yasunori Miyazaki
发明人： Yasunori Miyazaki
IPC分类号： G02F1/01 , G02F1/035
CPC分类号： G02F1/225 , G02F2203/25
摘要： An optical modulation device includes: an optical splitter for splitting input light into a first input beam and a second input beam; an optical intensity modulator for modulating the intensity of the first input beam in response to a modulating signal; a variable optical phase shifter for shifting the phase of the second input beam; and an optical combiner for combining an output beam of the optical intensity modulator and an output beam of the variable optical phase shifter into a combined beam and outputting the combined beam. The amount of phase shift produced by the variable optical phase shifter is externally controlled.
摘要翻译：光调制装置包括：分光器，用于将输入光分成第一输入光束和第二输入光束; 光强度调制器，用于响应于调制信号调制第一输入光束的强度; 用于移动第二输入光束的相位的可变光学移相器; 以及光合成器，用于将光强度调制器的输出光束和可变光移相器的输出光束组合成组合光束并输出组合光束。由可变光学移相器产生的相移量由外部控制。

7. 发明授权

US07502402B2 Integrated optical semiconductor device 失效
标题翻译：集成光半导体器件
公开(公告)号：US07502402B2
公开(公告)日：2009-03-10
申请号：US11539879
申请日：2006-10-10
申请人： Yasunori Miyazaki
发明人： Yasunori Miyazaki
IPC分类号： H01S5/00
CPC分类号： H01S5/026
摘要： A semiconductor laser device includes a semiconductor laser portion, a window layer structure portion, a first inter-element portion, and a pre-placed optical element portion on an InP substrate. The semiconductor laser portion includes an InGaAsP layer and an InP layer located on the InGaAsP layer. The window layer structure portion of a double heterojunction structure has the same optical axis direction as the semiconductor laser portion and is located apart from the semiconductor laser portion. The first inter-element portion has a 100-μm or less thickness in an optical axis direction, is in contact with an end face on a side of the window layer structure portion adjacent to the semiconductor laser portion and includes an InGaAsP layer and an InP layer of the same layer configuration as the semiconductor laser portion. The pre-placed optical element portion of the double heterojunction structure has a first end face in contact with the first inter-element portion and a second end face mutually opposed to the first end face and in contact with one end face of the semiconductor laser portion.
摘要翻译：半导体激光器件包括在InP衬底上的半导体激光器部分，窗口层结构部分，第一元件间部分和预置光学元件部分。半导体激光器部分包括位于InGaAsP层上的InGaAsP层和InP层。双异质结结构的窗口层结构部分具有与半导体激光器部分相同的光轴方向并与半导体激光器部分分开。第一元件间部分在光轴方向上具有100μm或更小的厚度，与邻近半导体激光器部分的窗口层结构部分的一侧的端面接触，并且包括InGaAsP层和InP 层与半导体激光部分相同的层结构。双异质结结构的预置光学元件部分具有与第一元件间部分接触的第一端面和与第一端面相对并与半导体激光器部分的一个端面接触的第二端面。

8. 发明授权

US06574379B2 Optical device and its manufacturing method 失效
标题翻译：光学器件及其制造方法
公开(公告)号：US06574379B2
公开(公告)日：2003-06-03
申请号：US09779840
申请日：2001-02-09
申请人： Yasunori Miyazaki
发明人： Yasunori Miyazaki
IPC分类号： G02F101
CPC分类号： G02F1/0102 , G02F1/025 , G02F2201/063 , G02F2201/08 , G02F2201/12
摘要： An optical device having superior frequency characteristics and high optical axis stability. The back surfaces of an optical modulator and a pair of transmission lines are bonded to a pedestal with the transmission lines located on opposite sides of the optical modulator. Conductive bumps are located on the transmission lines and electrode pads on the front surface of the optical modulator. A connection transmission line is bonded to the bumps, so the electrode pads of the optical modulator are connected to the transmission lines via the connection transmission line.
摘要翻译：具有优异的频率特性和高的光轴稳定性的光学装置。光调制器和一对传输线的背面与位于光调制器相对侧的传输线接合到基座。导电凸块位于光调制器前表面的传输线和电极焊盘上。连接传输线接合到凸块，因此光调制器的电极焊盘经由连接传输线连接到传输线。

9. 发明授权

US07911675B2 Optical modulation device and optical semiconductor device 有权
标题翻译：光调制器件和光半导体器件
公开(公告)号：US07911675B2
公开(公告)日：2011-03-22
申请号：US12253286
申请日：2008-10-17
申请人： Yasunori Miyazaki
发明人： Yasunori Miyazaki
IPC分类号： G02F1/01 , G02F1/03 , G02F1/29
CPC分类号： G02F1/225 , G02F2203/25
摘要： An optical modulation device includes: an optical splitter for splitting input light into a first input beam and a second input beam; an optical intensity modulator for modulating the intensity of the first input beam in response to a modulating signal; a variable optical phase shifter for shifting the phase of the second input beam; and an optical combiner for combining an output beam of the optical intensity modulator and an output beam of the variable optical phase shifter into a combined beam and outputting the combined beam. The amount of phase shift produced by the variable optical phase shifter is externally controlled.
摘要翻译：光调制装置包括：分光器，用于将输入光分成第一输入光束和第二输入光束; 光强度调制器，用于响应于调制信号调制第一输入光束的强度; 用于移动第二输入光束的相位的可变光学移相器; 以及光合成器，用于将光强度调制器的输出光束和可变光移相器的输出光束组合成组合光束并输出组合光束。由可变光学移相器产生的相移量由外部控制。

10. 发明授权

US06978055B2 Optical modulator 有权
标题翻译：光调制器
公开(公告)号：US06978055B2
公开(公告)日：2005-12-20
申请号：US10234463
申请日：2002-09-05
申请人： Yasunori Miyazaki
发明人： Yasunori Miyazaki
IPC分类号： G02F1/015 , G02F1/017 , G02F1/035
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2001/01758 , G02F2001/01766 , G02F2203/25
摘要： An optical modulator with lowered chirping without deterioration of extinction characteristic. An intermediate layer is interposed between a well layer and an n-side barrier layer and tensile strain is produced in the well layer. A relationship Ew
摘要翻译：具有降低啁啾的光学调制器，而不会消失特性。在阱层和n侧阻挡层之间插入中间层，并且在阱层中产生拉伸应变。在阻挡层的带隙能量Eb（eV），阱层的带隙能量Ew（eV）和中间层的带隙能量Em（eV）之间建立关系Ew

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式