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1. 发明授权

US5149670A Method for producing semiconductor light emitting device 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US5149670A
公开(公告)日：1992-09-22
申请号：US712909
申请日：1991-06-07
申请人： Kunihiko Isshiki
发明人： Kunihiko Isshiki
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223
CPC分类号： H01L33/305 , H01L33/0062 , H01S5/2232 , H01S5/2063 , H01S5/2235 , H01S5/2237
摘要： A method of producing a semiconductor light emitting device includes forming a stripe-shaped mesa on a surface of a semiconductor substrate; epitaxially growing a multiple layer structure including at least a first cladding layer, an active layer, a second cladding layer, and a cap layer so that the active layer and cap layer have mesas corresponding to the mesa of the substrate; depositiong photoresist on the cap layer to form a flattened surface; removing the photoresist to expose the mesa of the cap layer; removing a portion of the cap layer using the photoresist remaining on the cap layer as a mask to make the surface of the cap layer approximately flat; depositing a thin film to be used as a mask for proton or ion bombardment on the cap layer and on the remaining photoresist; removing the remaining photoresist and the thin film on the remaining photoresist; and bombarding the cap layer with protons and ions using the remaining thin film on the cap layer as a mask to produce higher resistivity regions adjacent the remaining thin film than directly below the remaining thin film. Therefore, highly reliable semiconductor laser devices having good and uniform characteristics can be realized.
摘要翻译：一种制造半导体发光器件的方法包括在半导体衬底的表面上形成条状台面; 外延生长包括至少第一包层，有源层，第二覆层和覆盖层的多层结构，使得有源层和盖层具有对应于衬底的台面的台面; 在盖层上沉积光致抗蚀剂以形成扁平表面; 去除光致抗蚀剂以暴露盖层的台面; 使用保留在盖层上的光致抗蚀剂作为掩模去除覆盖层的一部分，以使盖层的表面近似平坦; 沉积一薄膜以用作在盖层和剩余的光致抗蚀剂上进行质子或离子轰击的掩模; 去除剩余光致抗蚀剂上剩余的光致抗蚀剂和薄膜; 并用盖层上的剩余薄膜作为掩模用质子和离子轰击盖层，以产生与剩余薄膜正下方相邻的较高电阻率区域。因此，可以实现具有良好且均匀特性的高可靠性半导体激光器件。

2. 发明授权

US5020068A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5020068A
公开(公告)日：1991-05-28
申请号：US432215
申请日：1989-11-06
申请人： Kunihiko Isshiki
发明人： Kunihiko Isshiki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/34 , H01S5/2202 , H01S5/2231
摘要： A multi-quantum well laser having a self-aligned structure which limits catastophic optical damage by producing window regions near the facets without significantly decreasing the efficiency of the laser. The semiconductor laser includes at least a first conductivity type lower cladding layer, an active layer including a multi-quantum well structure, a second conductivity type first upper cladding layer, a first conductivity type current blocking layer, and a second conductivity type second upper cladding layer successively disposed on a first conductivity type semiconductor substrate. The current blocking layer has a central elongate stripe shaped current confinement groove extending between the laser facets which stabilizes the transverse mode and confines current to a channel-like region in the active layer. First conductivity type dopant impurities form disordering regions located adjacent the facets which invade and disorder the multi-quantum well active layer to create disordered active layer regions. Second conductivity type dopant impurities form separating regions located adjacent the faects which separate the current blocking layer and the disordering regions to prevent current leakage between the current blocking layer and the disordering regions.
摘要翻译：具有自对准结构的多量子阱激光器，其通过在面附近产生窗口区域而不显着降低激光器的效率来限制灾难性的光学损伤。半导体激光器包括至少第一导电型下包层，包括多量子阱结构的有源层，第二导电型第一上覆层，第一导电型电流阻挡层和第二导电型第二上包层层，依次设置在第一导电型半导体基板上。电流阻挡层具有在激光平面之间延伸的中心细长条状电流限制槽，其稳定横向模式并将电流限制在有源层中的沟道状区域。第一导电类型掺杂杂质形成位于邻面的无序区域，其侵入并扰乱多量子阱活性层以产生无序的有源层区域。第二导电类型掺杂剂杂质形成分离区，其邻近于将电流阻挡层和无序区分开的手段，以防止电流阻挡层和无序区域之间的电流泄漏。

3. 发明授权

US07365902B2 Optical amplifier and optical communication system 有权
标题翻译：光放大器和光通信系统
公开(公告)号：US07365902B2
公开(公告)日：2008-04-29
申请号：US10515054
申请日：2003-04-03
申请人： Kunihiko Isshiki
发明人： Kunihiko Isshiki
IPC分类号： H01S3/00
CPC分类号： H04B10/2916 , H01S3/094096 , H01S3/1312 , H01S3/302 , H04J14/0204
摘要： An optical amplifier includes a plurality of pump light sources, an intensity modulator that modulates intensity of a pump light to be output from any one of the pump light sources, at a predetermined frequency; a photoelectric converter that converts a part of the wavelength-division multiplexed signal light Raman-amplified by the pump light to electrical signals; a gain modulation signal detector that extracts a gain modulation signal having a component of the frequency from the electrical signals; and a controller that controls only the intensity of pump lights that are output from the pump light source, of which intensity is modulated at the frequency to control Raman amplification gain so that an amplitude of the gain modulation signal becomes a predetermined value. The intensities of pump lights output from individual pump light sources are sequentially controlled to obtain a predetermined value of the Raman amplification gain.
摘要翻译：光放大器包括多个泵浦光源，强度调制器，其以预定频率调制从任何一个泵浦光源输出的泵浦光的强度; 光电转换器，将通过泵浦光放大的波分复用信号光拉曼的一部分转换为电信号; 增益调制信号检测器，从电信号中提取具有频率分量的增益调制信号; 以及控制器，其仅控制从泵浦光源输出的泵浦光的强度，其中强度以频率被调制以控制拉曼放大增益，使得增益调制信号的幅度变为预定值。依次控制从各泵浦光源输出的泵浦光的强度，以获得拉曼放大增益的预定值。

4. 发明授权

US5550855A Optical modulator 失效
标题翻译：光调制器
公开(公告)号：US5550855A
公开(公告)日：1996-08-27
申请号：US237308
申请日：1994-05-03
申请人： Toshitaka Aoyagi , Hitoshi Watanabe , Yasunori Miyazaki , Kunihiko Isshiki
发明人： Toshitaka Aoyagi , Hitoshi Watanabe , Yasunori Miyazaki , Kunihiko Isshiki
IPC分类号： H01S5/06 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/0625 , H01S3/18
CPC分类号： H04B10/2507 , H01S5/0265 , H01S5/0625
摘要： In an optical modulator including a laser light source emitting laser light and a modulator, a modulation signal source for applying a modulation signal to the modulator, a signal processor for producing and outputting a signal in response to a change in the modulation signal, and a driving current source for generating a driving current applied to the laser light. Wavelength chirping modulation reverse to the wavelength chirping occurring in the modulator is produced in the light emitted from the laser by modulation of the driving current whereby wavelength chirping produced by the modulator is at least partially cancelled and wavelength chirping of the light output from the modulator is reduced.
摘要翻译：在包括发射激光的激光光源和调制器的光调制器中，用于向调制器施加调制信号的调制信号源，响应于调制信号的变化产生和输出信号的信号处理器，以及用于产生施加到激光的驱动电流的驱动电流源。通过调制驱动电流，在由激光器发出的光中产生与调制器中发生的波长啁啾相反的波长啁啾调制，由此调制器产生的波长啁啾至少部分被消除，并且来自调制器的光输出的波长啁啾是减少

5. 发明授权

US5161166A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5161166A
公开(公告)日：1992-11-03
申请号：US760396
申请日：1991-09-16
申请人： Akihiro Shima , Kunihiko Isshiki
发明人： Akihiro Shima , Kunihiko Isshiki
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223
CPC分类号： H01L33/0062 , H01S5/16 , H01S5/2231
摘要： A double heterojunction semiconductor laser according to the invention includes first and third cladding layers sandwiching an active layer. The third cladding layer includes a mesa opposite a light emitting region of the active layer. The mesa is confined by a current blocking layer. A cap layer that is part of the mesa is used as a dopant diffusion source to dope a light emitting region of the active layer heavily. A second cladding layer may be present between the active layer and third cladding layer having the same conductivity type as the third cladding layer adjacent the light emitting region but the opposite conductivity type elsewhere. A semiconductor laser according to the invention may also include a stripe groove structure. The semiconductor lasers include pnpn structures outside the light emitting region and in window structures adjacent the facets of the semiconductor laser for suppressing leakage currents, thereby increasing laser efficiency and reducing threshold current while increasing power output.
摘要翻译：根据本发明的双异质结半导体激光器包括夹着有源层的第一和第三覆层。第三覆层包括与有源层的发光区域相对的台面。台面被当前阻挡层限制。作为台面的一部分的盖层用作掺杂剂扩散源以重掺杂活性层的发光区域。第二包覆层可以存在于与邻近发光区域但与其它位置相反的导电类型的与第三覆层相同的导电类型的有源层和第三覆层之间。根据本发明的半导体激光器还可以包括条纹槽结构。半导体激光器包括发光区域外的pnpn结构和邻近半导体激光器的面的窗口结构，用于抑制漏电流，从而在增加功率输出的同时增加激光效率并降低阈值电流。

6. 发明授权

US5089437A Semiconductor laser manufacturing method 失效
标题翻译：半导体激光制造方法
公开(公告)号：US5089437A
公开(公告)日：1992-02-18
申请号：US586197
申请日：1990-09-20
申请人： Akihiro Shima , Kunihiko Isshiki
发明人： Akihiro Shima , Kunihiko Isshiki
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223
CPC分类号： H01L33/0062 , H01S5/16 , H01S5/2231
摘要： A double heterojunction semiconductor laser according to the invention includes first and third cladding layers sandwiching an active layer. The third cladding layer includes a mesa opposite a light emitting region of the active layer. The mesa is confined by a current blocking layer. A cap layer that is part of the mesa is used as a dopant diffusion source to dope a light emitting region of the active layer heavily. A second cladding layer may be present between the active layer and third cladding layer having the same conductivity type as the third cladding layer adjacent the light emitting region but the opposite conductivity type elsewhere. A semiconductor laser according to the invention may also include a stripe groove structure. The semiconductor lasers include pnpn structures outside the light emitting region and in window structures adjacent the facets of the semiconductor laser for suppressing leakage currents, thereby increasing laser efficiency and reducing threshold current while increasing power output.
摘要翻译：根据本发明的双异质结半导体激光器包括夹着有源层的第一和第三覆层。第三覆层包括与有源层的发光区域相对的台面。台面被当前阻挡层限制。作为台面的一部分的盖层用作掺杂剂扩散源以重掺杂活性层的发光区域。第二包覆层可以存在于与邻近发光区域但与其它位置相反的导电类型的与第三覆层相同的导电类型的有源层和第三覆层之间。根据本发明的半导体激光器还可以包括条纹槽结构。半导体激光器包括发光区域外的pnpn结构和邻近半导体激光器的面的窗口结构，用于抑制漏电流，从而在增加功率输出的同时增加激光效率并降低阈值电流。

7. 发明授权

US5867306A Optical amplifier 失效
标题翻译：光放大器
公开(公告)号：US5867306A
公开(公告)日：1999-02-02
申请号：US878816
申请日：1997-06-19
申请人： Kunihiko Isshiki
发明人： Kunihiko Isshiki
IPC分类号： H01S3/07 , H01S3/06 , H01S3/067 , H01S3/094 , H01S3/10 , H01S3/23 , H01S3/00
CPC分类号： H01S3/10023 , H01S3/06758 , H01S2301/04 , H01S2301/06 , H01S3/094096 , H01S3/2316 , H01S3/2333
摘要： An efficient, wavelength independent, small optical amplifier includes an optical transmitter, a signal light inputter supplying light to the optical transmitter, an amplified light fiber connected to the optical transmitter, an excitation source supplying pump light to the light amplified fiber, an optical filter connected between the light amplified fiber and the excitation source for reflecting the signal light and transmitting the pump light, and an outputter for outputting the amplified signal light. The amplifier may also include another light amplified fiber connected to the optical transmitter, another excitation source, and another optical filter for further amplifying the signal light amplified by the light amplified fiber. The wavelengths output by the excitation sources may differ to provide more efficient amplification. The signal light may include different wavelengths, resulting in a wavelength dependency of gain for the amplifier. In order to compensate for this wavelength dependency, the material, the length, the dopant level, and/or the core diameter used for the light amplified fibers may differ, again the wavelength of the excitation sources may differ, and the optical filters may only pass different certain wavelengths. Portions fed by the respective terminal may be integrated to reduce the number of elements and size of the amplifier.
摘要翻译：一种高效的，独立于波长的小型光放大器包括光发射器，向光发射器供光的信号光输入器，连接到光发射器的放大光纤，向光放大光纤提供泵浦光的激发源，光滤波器连接在光放大光纤和用于反射信号光和发射泵浦光的激发源之间，以及用于输出放大的信号光的输出器。放大器还可以包括连接到光发射器，另一个激励源的另一个光放大光纤，以及用于进一步放大由光放大光放大的信号光的另一滤光器。由激发源输出的波长可以不同以提供更有效的放大。信号光可以包括不同的波长，导致放大器的增益的波长依赖性。为了补偿这种波长依赖性，用于光放大光纤的材料，长度，掺杂剂水平和/或芯直径可能不同，激发源的波长可能不同，并且光学滤波器可以仅通过不同的某些波长。可以集成由相应端子馈送的部分以减少放大器的元件数量和尺寸。

8. 发明授权

US4757509A Semiconductor laser apparatus 失效
标题翻译：半导体激光装置
公开(公告)号：US4757509A
公开(公告)日：1988-07-12
申请号：US888398
申请日：1986-07-23
申请人： Kunihiko Isshiki , Wataru Susaki
发明人： Kunihiko Isshiki , Wataru Susaki
IPC分类号： H01S5/00 , H01S5/16 , H01S3/19
CPC分类号： H01S5/16
摘要： Laser light guided by a coupled waveguide (formed by difference in refractive index between n-type and p-type AlGaAs clad layers (2) and (4) and an undoped AlGaAs active layer (3) and difference in refractive index between the p-type AlGaAs clad layers (4) and (7) and a p-type AlGaAs waveguide layer (6)) is guided only by the p-type AlGaAs waveguide layer (6) in the vicinity of end surfaces (40, 42), not to be coupled with the undoped AlGaAs active layer (3). Therefore, surface regions of the end surfaces (40, 42) reflecting the laser light are formed by the p-type AlGaAs clad layers (4, 7) and the p-type AlGaAs waveguide layer (6) being larger in forbidden bandwidth.
摘要翻译：由耦合波导引导的激光（由n型和p型AlGaAs覆盖层（2）和（4）之间的折射率差异和未掺杂的AlGaAs有源层（3）形成的折射率差异，（4）和（7）和p型AlGaAs波导层（6））仅在端面（40,42）附近由p型AlGaAs波导层（6）引导，而不是由p型AlGaAs波导层与未掺杂的AlGaAs活性层（3）耦合。因此，反射激光的端面（40,42）的表面区域由p型AlGaAs覆层（4,7）形成，p型AlGaAs波导层（6）的禁带宽度较大。

9. 发明授权

US4768200A Internal current confinement type semiconductor light emission device 失效
标题翻译：内部电流限制型半导体发光器件
公开(公告)号：US4768200A
公开(公告)日：1988-08-30
申请号：US875321
申请日：1986-06-17
申请人： Kunihiko Isshiki
发明人： Kunihiko Isshiki
IPC分类号： G02F3/02 , H01L33/10 , H01L33/14 , H01L33/24 , H01L33/30 , H01S5/00 , H01S5/16 , H01S5/24 , H01S3/19
CPC分类号： G02F3/026 , H01S5/16 , H01S5/24
摘要： A semiconductor light emission device includes: a first conductivity type semiconductor substrate which has a pair of confronting resonator end surfaces and a hollow section provided thereon. The hollow section is arranged in a direction vertical the direction in which the resonator end surfaces confront each other. A second conductivity type current blocking layer having a flat upper surface is provided on the entire upper surface of the semiconductor substrate. A stripe groove is provided in the current blocking layer extending in a direction between the resonator end surfaces in such a manner that the groove reaches only within the current blocking layer at the hollow section and reaches the semiconductor substrate through the current blocking layer at portions outside the hollow section. A first conductivity type lower clad layer is provided on the entire upper surface of the current blocking layer so as to embed the stripe groove. A first or second conductivity type active layer is provided on the entire upper surface of the lower clad layer, and a second conductivity type upper clad layer is provided on the entire upper surface of the active layer.
摘要翻译：半导体发光器件包括：第一导电型半导体衬底，其具有一对相对的谐振器端面和设置在其上的中空部。中空部分沿着垂直于谐振器端面彼此面对的方向的方向布置。具有平坦上表面的第二导电型电流阻挡层设置在半导体衬底的整个上表面上。电流阻挡层中的条纹槽设置在谐振器端面之间的方向上，使得凹槽仅在中空部分处于电流阻挡层内，并且在外部的部分通过电流阻挡层到达半导体衬底中空部分。在电流阻挡层的整个上表面上设置第一导电型下包层，以便嵌入条纹槽。第一或第二导电型有源层设置在下包层的整个上表面上，并且在有源层的整个上表面上设置第二导电型上覆层。

10. 发明申请

US20050237600A1 Optical amplifier and optical communication system 有权
标题翻译：光放大器和光通信系统
公开(公告)号：US20050237600A1
公开(公告)日：2005-10-27
申请号：US10515054
申请日：2003-04-03
申请人： Kunihiko Isshiki
发明人： Kunihiko Isshiki
IPC分类号： G02F1/35 , H01S3/042 , H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/131 , H01S3/30 , H04B10/07 , H04B10/29 , H04B10/294 , H04B10/54 , H04B10/564 , H04B10/58 , H04J14/00 , H04J14/02 , H01S3/00
CPC分类号： H04B10/2916 , H01S3/094096 , H01S3/1312 , H01S3/302 , H04J14/0204
摘要： An optical amplifier includes a plurality of pump light sources, an intensity modulator that modulates intensity of a pump light to be output from any one of the pump light sources, at a predetermined frequency; a photoelectric converter that converts a part of the wavelength-division multiplexed signal light Raman-amplified by the pump light to electrical signals; a gain modulation signal detector that extracts a gain modulation signal having a component of the frequency from the electrical signals; and a controller that controls only the intensity of pump lights that are output from the pump light source, of which intensity is modulated at the frequency to control Raman amplification gain so that an amplitude of the gain modulation signal becomes a predetermined value. The intensities of pump lights output from individual pump light sources are sequentially controlled to obtain a predetermined value of the Raman amplification gain.
摘要翻译：光放大器包括多个泵浦光源，强度调制器，其以预定频率调制从任何一个泵浦光源输出的泵浦光的强度; 光电转换器，将通过泵浦光放大的波分复用信号光拉曼的一部分转换为电信号; 增益调制信号检测器，从电信号中提取具有频率分量的增益调制信号; 以及控制器，其仅控制从泵浦光源输出的泵浦光的强度，其中强度以频率被调制以控制拉曼放大增益，使得增益调制信号的幅度变为预定值。依次控制从各泵浦光源输出的泵浦光的强度，以获得拉曼放大增益的预定值。

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