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1. 发明申请

US20070240629A1 Method for manufacturing a silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20070240629A1
公开(公告)日：2007-10-18
申请号：US11783544
申请日：2007-04-10
申请人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
发明人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
IPC分类号： C30B15/00 , C30B27/02
CPC分类号： C30B15/14 , C30B29/06
摘要： The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of cooling the silicon single crystal by a cooler surrounding the silicon single crystal, and a heat shield body disposed surrounding an outer side and a lower side of the cooler while the silicon single crystal is being pulled up; and an Ms adjusting step of determining, in advance, an allowable range of a pulling speed at which a silicon single crystal having few crystal defects can be obtained by adjusting a distance (referred to “Ms”) from the lower surface of the heat shield body disposed on the lower side of the cooler to the surface of the molten silicon, wherein the silicon single crystal 11 is pulled up at a pulling speed within the allowable range thus determined.
摘要翻译：本发明涉及通过CZ法从熔融硅中提取硅单晶来制造单晶硅的方法，包括：冷却步骤，通过围绕硅单晶的冷却剂冷却硅单晶;以及隔热体，其在所述硅单晶被拉起的同时围绕所述冷却器的外侧和下侧设置; 以及Ms调整步骤，预先确定通过从隔热板的下表面调整距离（称为“Ms”），可以获得具有很少晶体缺陷的硅单晶的拉伸速度的允许范围本体设置在冷却器的下侧至熔融硅的表面，其中硅单晶11以这样确定的允许范围内的拉拔速度被拉起。

2. 发明申请

US20070227439A1 Method for manufacturing defect-free silicon single crystal 有权
标题翻译：无缺陷硅单晶的制造方法
公开(公告)号：US20070227439A1
公开(公告)日：2007-10-04
申请号：US11728739
申请日：2007-03-27
申请人： Takashi Yokoyama , Toshiaki Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
发明人： Takashi Yokoyama , Toshiaki Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917 , Y10T117/1056
摘要： A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
摘要翻译：提供了一种用于控制硅单晶侧表面温度梯度，固液界面高度和硅单晶长度方向氧浓度的方法，以制造无缺陷硅其浓度迅速且稳定地控制在预定值的单晶。通过在硅单晶周围配置圆筒状的冷却器，调整硅单晶的拉拔速度，存储熔融硅的坩埚的旋转速度和硅单晶的旋转速度，加热器在坩埚周围的硅单晶的长度方向分离成至少两个，侧面的温度梯度，固液界面的高度以及硅单晶的长度方向的氧浓度被控制。

3. 发明授权

US07524371B2 Method for manufacturing defect-free silicon single crystal 有权
标题翻译：无缺陷硅单晶的制造方法
公开(公告)号：US07524371B2
公开(公告)日：2009-04-28
申请号：US11728739
申请日：2007-03-27
申请人： Takashi Yokoyama , Toshiaka Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
发明人： Takashi Yokoyama , Toshiaka Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917 , Y10T117/1056
摘要： A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
摘要翻译：提供了一种用于控制硅单晶侧表面温度梯度，固液界面高度和硅单晶长度方向氧浓度的方法，以制造无缺陷硅其浓度迅速且稳定地控制在预定值的单晶。通过在硅单晶周围配置圆筒状的冷却器，调整硅单晶的拉拔速度，存储熔融硅的坩埚的旋转速度和硅单晶的旋转速度，加热器在坩埚周围的硅单晶的长度方向分离成至少两个，侧面的温度梯度，固液界面的高度以及硅单晶的长度方向的氧浓度被控制。

4. 发明授权

US06179910B2 Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors 有权
标题翻译：制造适用于制造半导体的硅单晶和晶片的方法
公开(公告)号：US06179910B2
公开(公告)日：2001-01-30
申请号：US09396107
申请日：1999-09-14
申请人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
摘要翻译：本发明提供一种制造单晶硅的方法。该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。

5. 发明申请

US20060016387A1 Silicon wafer, its manufacturing method, and its manufacturing apparatus 审中-公开
标题翻译：硅晶片及其制造方法及其制造装置
公开(公告)号：US20060016387A1
公开(公告)日：2006-01-26
申请号：US10534946
申请日：2003-11-14
申请人： Takashi Yokoyama , Koji Yoshihara , Toshiaki Saishoji , Kozo Nakamura , Ryota Suewa
发明人： Takashi Yokoyama , Koji Yoshihara , Toshiaki Saishoji , Kozo Nakamura , Ryota Suewa
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B15/203 , C30B15/14 , C30B15/206 , C30B29/06
摘要： The production yield about defect free devices is improved by so controlling the size and density of void defects that they are under predetermined levels without marring the productivity. The pull-up speed V of a silicon crystal (10) by a pull-up mechanism (4) is controlled, and the rate of cooling by a cooler (30) is also controlled. As a result, the axial temperature gradient G1 at and near the melting point of the silicon crystal (10) is increased. The growth condition V/G1 is lowered to a temperature near the critical value under the condition that the growth rate V lies in the range from 97% to 75% of the limit rate Vmax and that the solid-liquid interface is convex with respect to the melt surface. Thus a silicon crystal (10) is grown by pulling up.
摘要翻译：通过如此控制空隙缺陷的尺寸和密度，使其无缺陷的器件的生产率得到改善，而不损害生产率。通过上拉机构（4）控制硅晶体（10）的上拉速度V，并且还控制冷却器（30）的冷却速度。结果，硅晶体（10）的熔点和附近的轴向温度梯度G 1升高。在生长速度V处于极限速率Vmax的97％至75％的范围内，将生长条件V / G 1降低到接近临界值的温度，固体液体界面相对于熔体表面是凸的。因此，通过拉起来生长硅晶体（10）。

6. 外观设计

USD974667S1 Baseball glove 有权
公开(公告)号：USD974667S1
公开(公告)日：2023-01-03
申请号：US29824124
申请日：2022-01-21
申请人： Takashi Yokoyama , Naoto Kamitake
设计人： Takashi Yokoyama , Naoto Kamitake

7. 发明授权

US09219077B2 Semiconductor device and fabrication method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09219077B2
公开(公告)日：2015-12-22
申请号：US13430212
申请日：2012-03-26
申请人： Takashi Yokoyama
发明人： Takashi Yokoyama
IPC分类号： H01L29/78 , H01L27/12 , H01L21/84 , H01L21/762 , H01L21/8238
CPC分类号： H01L29/7848 , H01L21/76251 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L23/5226 , H01L23/5227 , H01L23/53214 , H01L23/53228 , H01L23/53257 , H01L25/0657 , H01L27/0924 , H01L27/1203 , H01L29/045 , H01L29/1608 , H01L29/165 , H01L29/4966 , H01L29/518 , H01L29/7843 , H01L2224/9212 , H01L2225/06541 , H01L2225/06558 , H01L2924/0002 , H01L2924/00 , H01L2224/80896 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
摘要： A semiconductor device includes: a first substrate on which a first field effect transistor is provided; and a second substrate on which a second field effect transistor of a second conductive type is provided; the first and second substrates being bonded to each other at the substrate faces thereof on which the first and second field transistors are provided, respectively; the first field effect transistor and the second field effect transistor being electrically connected to each other.
摘要翻译：半导体器件包括：第一衬底，其上设置有第一场效应晶体管; 以及第二基板，其上设置有第二导电类型的第二场效应晶体管; 第一和第二基板分别在其上设置有第一和第二场晶体管的基板面彼此接合; 第一场效应晶体管和第二场效应晶体管彼此电连接。

8. 发明申请

US20130064616A1 TOOL RADIUS ADJUSTING METHOD IN MACHINE TOOL AND MACHINE TOOL FOR PRACTICING THE METHOD 有权
标题翻译：用于实施方法的机床工具和机床的工具半径调整方法
公开(公告)号：US20130064616A1
公开(公告)日：2013-03-14
申请号：US13509911
申请日：2010-11-10
申请人： Eiji Nakamura , Akihiko Kadota , Takashi Yokoyama , Yasuhiro Komai , Harumi Sawaki , Shun Sawaki , Aya Sawaki , Taku Sawaki
发明人： Eiji Nakamura , Norikazu Sawaki , Akihiko Kadota , Takashi Yokoyama , Yasuhiro Komai
IPC分类号： B23B47/22 , B23B35/00
CPC分类号： B23B29/03403 , B23B29/03421 , B23B29/03425 , B23B29/03489 , B23B35/00 , B23B2250/04 , B23B2270/025 , B23B2270/027 , B23B2270/48 , Y10T82/10 , Y10T408/03 , Y10T408/175 , Y10T408/85 , Y10T408/858
摘要： At a contact step in a tool radius adjusting method, a reference portion of a movable body provided radially movably on a housing of a boring tool and a position adjusting reference member fixed on a machine tool are brought into contact by sliding the movable body relative to the housing so that the position of a cutting blade comes to a predetermined position in a direction to go away from a rotational axis. Then, at an adjusting step, the position of the cutting blade relative to the rotational axis is adjusted by changing the relative position between a tool spindle holding the boring tool and the position adjusting reference member in a direction to come close to each other by drive mechanisms of the machine tool used for positioning a spindle head with the tool spindle relative to a workpiece in machining the workpiece with the cutting blade.
摘要翻译：在工具半径调整方法的接触步骤中，通过使可移动体相对于所述移动体相对于所述可移动体相对于所述移动体相对于所述移动体相对于所述移动体相对于所述移动体所述壳体使得切割刀片的位置在远离旋转轴线的方向上到达预定位置。然后，在调整步骤中，通过在保持钻孔工具的工具主轴与位置调整基准构件之间的相对位置通过驱动方向彼此靠近的方向来改变切割刀片相对于旋转轴线的位置机床用于在与切割刀片一起加工工件时，将主轴头与工具主轴相对于工件定位。

9. 发明申请

US20120058871A1 MACHINE TOOL INCLUDING TOOL RADIUS ADJUSTING DEVICE 有权
标题翻译：机器工具包括工具RADIUS调整设备
公开(公告)号：US20120058871A1
公开(公告)日：2012-03-08
申请号：US13217555
申请日：2011-08-25
申请人： Eiji NAKAMURA , Akihiko Kadota , Takashi Yokoyama
发明人： Eiji NAKAMURA , Akihiko Kadota , Takashi Yokoyama
IPC分类号： B23Q3/157
CPC分类号： B23Q3/15713 , B23B29/03421 , B23B29/03425 , B23B29/03432 , B23Q3/1574 , Y10T408/76 , Y10T408/856 , Y10T408/85843 , Y10T483/12 , Y10T483/13 , Y10T483/15 , Y10T483/1738
摘要： A tool radius adjusting device executes an operation for adjusting the tool radius of a boring holder in parallel with execution of a machining program for executing an operation of a spindle head and an operation of a tool changer. A carrier control unit determines whether the tool changer is executing a tool changing process. When the tool changing process is not being executed, the carrier control unit allows the carrier device to execute an operation for picking the boring holder out from the tool magazine and an operation for returning the boring holder, of which the tool radius has been adjusted, to the tool magazine.
摘要翻译：刀具半径调节装置执行与执行用于执行主轴头的操作的加工程序和刀具更换器的操作并行地调整镗刀架的刀具半径的操作。载体控制单元确定换刀器是否正在执行换刀过程。当不执行换刀过程时，承运人控制单元允许承运人装置执行从工具仓中取出镗刀架的操作和用于使已经调整了刀具半径的镗刀架返回的操作，到工具杂志。

10. 发明申请

US20110022400A1 AUDIO RESUME PLAYBACK DEVICE AND AUDIO RESUME PLAYBACK METHOD 审中-公开
标题翻译：音频恢复播放设备和音频恢复播放方法
公开(公告)号：US20110022400A1
公开(公告)日：2011-01-27
申请号：US12847701
申请日：2010-07-30
申请人： Yukihiko KIMURA , Takashi Yokoyama , Tetsuya Oooka
发明人： Yukihiko KIMURA , Takashi Yokoyama , Tetsuya Oooka
IPC分类号： G10L19/00 , G06F17/00
CPC分类号： G10L19/167
摘要： An audio playback device includes an interruption-information storage memory which holds frame information at the time of an interruption of playback, a compressed-stream control section which calculates a start position of reading the compressed stream from a recording medium, and reads the compressed stream accordingly, a compressed-stream decode section which decodes the compressed audio stream and transmits decoding information on the frame to the compressed-stream control section as additional resume information, and an output control section which outputs a decoding result. When playback is restarted after an interruption, playback can be restarted without any section not played back in terms of time and without any frequency range not played back, by calculating the start position of reading the compressed stream based on both the additional resume information and the frame information at the time of the interruption, and by reading the compressed stream accordingly.
摘要翻译：音频播放装置包括：中断信息存储存储器，其在重放中断时保存帧信息;压缩流控制部分，其计算从记录介质读取压缩流的开始位置，并读取压缩流因此，压缩流解码部分对压缩音频流进行解码，并将该帧上的解码信息作为附加恢复信息发送到压缩流控制部分，以及输出控制部分，其输出解码结果。当在中断之后重新开始播放时，可以重新开始播放，而不会在时间上没有播放的部分，而没有任何频率范围不被重放，通过计算基于附加的恢复信息和在中断时的帧信息，以及相应地读取压缩流。

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