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1. 发明申请

US20070240629A1 Method for manufacturing a silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20070240629A1
公开(公告)日：2007-10-18
申请号：US11783544
申请日：2007-04-10
申请人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
发明人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
IPC分类号： C30B15/00 , C30B27/02
CPC分类号： C30B15/14 , C30B29/06
摘要： The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of cooling the silicon single crystal by a cooler surrounding the silicon single crystal, and a heat shield body disposed surrounding an outer side and a lower side of the cooler while the silicon single crystal is being pulled up; and an Ms adjusting step of determining, in advance, an allowable range of a pulling speed at which a silicon single crystal having few crystal defects can be obtained by adjusting a distance (referred to “Ms”) from the lower surface of the heat shield body disposed on the lower side of the cooler to the surface of the molten silicon, wherein the silicon single crystal 11 is pulled up at a pulling speed within the allowable range thus determined.
摘要翻译：本发明涉及通过CZ法从熔融硅中提取硅单晶来制造单晶硅的方法，包括：冷却步骤，通过围绕硅单晶的冷却剂冷却硅单晶;以及隔热体，其在所述硅单晶被拉起的同时围绕所述冷却器的外侧和下侧设置; 以及Ms调整步骤，预先确定通过从隔热板的下表面调整距离（称为“Ms”），可以获得具有很少晶体缺陷的硅单晶的拉伸速度的允许范围本体设置在冷却器的下侧至熔融硅的表面，其中硅单晶11以这样确定的允许范围内的拉拔速度被拉起。

2. 发明申请

US20080115720A1 Apparatus and method for manufacturing semiconductor single crystal 审中-公开
标题翻译：半导体单晶制造装置及方法
公开(公告)号：US20080115720A1
公开(公告)日：2008-05-22
申请号：US11983370
申请日：2007-11-07
申请人： Toshiaki Saishoji , Koichi Shimomura , Ryouta Suewaka , Daisuke Ebi
发明人： Toshiaki Saishoji , Koichi Shimomura , Ryouta Suewaka , Daisuke Ebi
IPC分类号： C30B15/00 , H01L21/00
CPC分类号： C30B15/14 , Y10T117/1068
摘要： A semiconductor single crystal manufacturing apparatus and method are provided which are capable of improving the speed of designing and arranging a silicon single crystal manufacturing apparatus while reducing labor by making it possible to instantaneously find optimum design values and optimum arrangement for a cooler without requiring a lot of labor or time, regardless of a housing structure of a CZ furnace, in-furnace members' configuration, and manufacturing conditions. Stable manufacture of defect-free silicon single crystals is also made possible by designing and arranging the cooler such that when a heat absorption amount of the cooler is denoted by Q and a semiconductor single crystal radius is denoted by r, the heat absorption amount of the cooler Q satisfies r2/1100≦Q≦r2/400, or alternatively Q satisfies r2.7/20500≦Q≦r2.7/19300.
摘要翻译：提供一种半导体单晶制造装置和方法，其能够通过使得可以立即找到最佳设计值并且不需要很多的冷却器的最佳布置来提高设计和布置硅单晶制造装置的速度，同时减少劳动不管CZ炉的房屋结构，炉内构件的构造和制造条件如何。通过设计和布置冷却器也可以稳定地制造无缺陷的硅单晶，使得当冷却器的吸热量用Q表示，半导体单晶半径由r表示时，吸热量冷却器Q满足r <2> / 1100 <= Q <= R 2/400，或者Q满足r <2.7 / 20500 <= Q < = R 2.7 / 19300。

3. 发明授权

US07455187B2 Traveling crane and assembling/disassembling method thereof 有权
公开(公告)号：US07455187B2
公开(公告)日：2008-11-25
申请号：US11937788
申请日：2007-11-09
申请人： Osamu Toudou , Koichi Shimomura , Keisuke Fukumoto
发明人： Osamu Toudou , Koichi Shimomura , Keisuke Fukumoto
IPC分类号： B66C23/82
CPC分类号： B66C23/344 , B66C23/82
摘要： A traveling crane according to the present invention includes a hook hoisting guide sheave for guiding a hook hoisting rope from the top of a boom toward the end of a jib, and the hook hoisting guide sheave is arranged on the top of the boom in a state that the guide sheave can guide the hook hoisting rope along the upper surface of the boom by folding the rope toward an upper spreader placed at a position adjacent to a boom anchor during assembling/disassembling of the crane. Thereby, the upper spreader can be moved between the boom anchor and a far end of the boom without providing a guide sheave dedicated for moving the upper spreader. Pairs of support legs are downward provided on both sides and in front and in rear of the upper spreader and a roller is provided for each support leg, so that interference between the upper spreader during movement and obstacles on the boom upper surface can be prevented even in a horizontal movement system excellent in operating efficiency.

4. 发明申请

US20080011222A1 Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer 有权
标题翻译：用于半导体晶片原料的熔融方法和半导体晶片的晶体生长方法
公开(公告)号：US20080011222A1
公开(公告)日：2008-01-17
申请号：US11826000
申请日：2007-07-10
申请人： Koichi Shimomura , Eiichirou Kotoura , Hiroyuki Ohta
发明人： Koichi Shimomura , Eiichirou Kotoura , Hiroyuki Ohta
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B11/003 , C30B29/06 , C30B35/00 , Y10T117/1068
摘要： The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw material is melted to form melt. When a part or all of the raw material is melted, the crucible is raised from the initial position or the side heater is lowered from the initial position. At this time, the position of the crucible or the side heater is adjusted such that the amount of heat applied to the lower side curved portion of the crucible side surface is greater than that in the initial relative position between the crucible and the side heater. And, if the crucible bottom part is heated by the side heater while the relative positions of the crucible and the side heater is maintained, the amount of heat applied to the crucible bottom part is increased as compared to the amount of heat applied to the crucible side surface, and the convection in the melt that makes the gas bubbles spatter to the outside. In this way, the gas bubbles are eliminated from the melt. As a result, the amount of gas bubbles in the melt can be reduced without deforming the crucible, and occurrence of pinhole defects in the wafer can be suppressed.
摘要翻译：将坩埚和侧面加热器保持在各自的初始位置，并将原料放入坩埚中。这些初始位置是坩埚侧表面主要由侧面加热器加热的位置。当侧面加热器加热坩埚侧表面时，原料被熔化以形成熔体。当原料的一部分或全部熔化时，坩埚从初始位置升高或侧面加热器从初始位置降低。此时，调整坩埚或侧面加热器的位置，使得施加到坩埚侧表面的下侧弯曲部分的热量大于坩埚和侧面加热器之间的初始相对位置的热量。并且，如果坩埚底部被侧加热器加热，同时保持坩埚和侧面加热器的相对位置，则与施加到坩埚的热量相比，施加到坩埚底部的热量增加侧表面，以及使气泡飞溅到外部的熔体中的对流。以这种方式，从熔体中消除气泡。结果，可以在不使坩埚变形的情况下降低熔体中的气泡量，并且可以抑制晶片中的针孔缺陷的发生。

5. 发明申请

US20050143219A1 Control device for hydraulic winch 有权
标题翻译：液压绞车控制装置
公开(公告)号：US20050143219A1
公开(公告)日：2005-06-30
申请号：US11014832
申请日：2004-12-20
申请人： Koichi Shimomura , Masaaki Ehara
发明人： Koichi Shimomura , Masaaki Ehara
IPC分类号： B66D1/08 , B66D1/44 , B66D1/48 , F15B11/02 , F15B11/08 , F16H61/48
CPC分类号： B66D1/08 , B66D1/44 , B66D1/48 , Y10T477/6388 , Y10T477/813 , Y10T477/814 , Y10T477/86
摘要： According to a control device for a hydraulic winch of the present invention, a regulator controls a motor capacity of a hydraulic motor having variable capacity functioning as a driving source of the hydraulic winch in response to a load pressure, a negative brake stops and retains the hydraulic motor at an automatic shutoff for prevention of overloading, and a controller sends signals to the regulator via a regulator-controlling valve at the automatic shutoff to set the motor capacity at a large value. Thus, the delay to recover the motor capacity at the time of returning from the automatic shutoff that is activated during winding-up of a load does not occur, and a control response is increased.
摘要翻译：根据本发明的液压绞盘的控制装置，调节器响应于负载压力来控制具有作为液压绞盘的驱动源的可变容量的液压马达的电动机容量，负制动器停止并保持液压马达在自动关闭时防止过载，控制器通过调节器控制阀在自动关闭状态下将信号发送到调节器，将电机容量设定在较大值。因此，不会发生在从负载中的起动时自动切断返回时恢复电动机容量的延迟，并且控制响应增加。

6. 发明授权

US5800612A Single-crystal semiconductor pulling apparatus 失效
标题翻译：单晶半导体拉制装置
公开(公告)号：US5800612A
公开(公告)日：1998-09-01
申请号：US796365
申请日：1997-02-06
申请人： Koichi Shimomura , Yoshinobu Hiraishi , Taizou Miyamoto
发明人： Koichi Shimomura , Yoshinobu Hiraishi , Taizou Miyamoto
IPC分类号： C30B15/26 , C30B15/22 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/22 , Y10T117/1004 , Y10T117/1008
摘要： A single-crystal semiconductor pulling apparatus improves the crystallization rate by reinforcing the physical strength of the Dash's neck portion, and eliminate the process time difference depending on the experiences of operators. The single-crystal semiconductor pulling apparatus, which is according to the Czochralski method, includes controller for automatically controlling the pulling rate of a seed crystal and a melt temperature. The controller modifies a target value of a diameter of a crystal grown from the seed which is immersed from a first value to a second value. The first value is for ensuring dislocation-free state, while the second value is for retaining physical strength of the crystal. Furthermore, the controller is provided with the function of judging the crystal to be in dislocation-free state. That is, the controller measures a length of each portion of the crystal whose diameter is smaller than the first value, and accumulates the length, and judges the crystal to be in dislocation-free state when the accumulate value is a value determined according to a reference length.
摘要翻译：单晶半导体拉制装置通过加强Dash颈部的体力来提高结晶速率，并根据操作者的经验消除加工时间差。根据Czochralski方法的单晶半导体拉制装置包括用于自动控制晶种的提取速率和熔融温度的控制器。控制器将从第一值浸没的种子生长的晶体的直径的目标值修改为第二值。第一个值是为了确保无位错状态，而第二个值用于保持晶体的物理强度。此外，控制器具有判断晶体处于无位错状态的功能。也就是说，控制器测量直径小于第一值的晶体的每个部分的长度，并且累积长度，并且当累积值是根据a的值确定的值时，判断晶体处于无位错状态参考长度。

7. 发明授权

US09103049B2 Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer 有权
标题翻译：用于半导体晶片原料的熔融方法和半导体晶片的晶体生长方法
公开(公告)号：US09103049B2
公开(公告)日：2015-08-11
申请号：US11826000
申请日：2007-07-10
申请人： Koichi Shimomura , Eiichirou Kotoura , Hiroyuki Ohta
发明人： Koichi Shimomura , Eiichirou Kotoura , Hiroyuki Ohta
IPC分类号： C30B15/14 , C30B11/00 , C30B29/06 , C30B35/00
CPC分类号： C30B15/14 , C30B11/003 , C30B29/06 , C30B35/00 , Y10T117/1068
摘要： The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw material is melted to form melt. When a part or all of the raw material is melted, the crucible is raised from the initial position or the side heater is lowered from the initial position. At this time, the position of the crucible or the side heater is adjusted such that the amount of heat applied to the lower side curved portion of the crucible side surface is greater than that in the initial relative position between the crucible and the side heater. And, if the crucible bottom part is heated by the side heater while the relative positions of the crucible and the side heater is maintained, the amount of heat applied to the crucible bottom part is increased as compared to the amount of heat applied to the crucible side surface, and the convection in the melt that makes the gas bubbles spatter to the outside. In this way, the gas bubbles are eliminated from the melt. As a result, the amount of gas bubbles in the melt can be reduced without deforming the crucible, and occurrence of pinhole defects in the wafer can be suppressed.
摘要翻译：将坩埚和侧面加热器保持在各自的初始位置，并将原料放入坩埚中。这些初始位置是坩埚侧表面主要由侧面加热器加热的位置。当侧面加热器加热坩埚侧表面时，原料被熔化以形成熔体。当原料的一部分或全部熔化时，坩埚从初始位置升高或侧面加热器从初始位置降低。此时，调整坩埚或侧面加热器的位置，使得施加到坩埚侧表面的下侧弯曲部分的热量大于坩埚和侧面加热器之间的初始相对位置的热量。并且，如果坩埚底部被侧加热器加热，同时保持坩埚和侧面加热器的相对位置，则与施加到坩埚的热量相比，施加到坩埚底部的热量增加侧表面，以及使气泡飞溅到外部的熔体中的对流。以这种方式，从熔体中消除气泡。结果，可以在不使坩埚变形的情况下降低熔体中的气泡量，并且可以抑制晶片中的针孔缺陷的发生。

8. 发明授权

US09080251B2 Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt 有权
标题翻译：单晶硅提拉装置，防止硅熔体污染的方法，以及防止硅熔体污染的装置
公开(公告)号：US09080251B2
公开(公告)日：2015-07-14
申请号：US13474268
申请日：2012-05-17
申请人： Makato Kamogawa , Koichi Shimomura , Yoshiyuki Suzuki , Daisuke Ebi
发明人： Makato Kamogawa , Koichi Shimomura , Yoshiyuki Suzuki , Daisuke Ebi
IPC分类号： C30B35/00 , C30B15/00 , C30B15/14 , C30B29/06
CPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
摘要翻译：筒状体的下端与热屏蔽体之间通过的Ar气流的速度受单晶硅的拉动路径，筒状体和热屏蔽体的配置的影响。因此，通过调整单晶硅，圆柱体和热屏蔽体的拉动路径的相对位置来控制通过筒体的下端与热屏蔽体之间的Ar气流的速度。如上所述，可以降低掉落到硅熔体的灰尘，从而防止单晶硅质量的劣化。

9. 发明授权

US09030165B2 Operating machine 有权
标题翻译：操作机
公开(公告)号：US09030165B2
公开(公告)日：2015-05-12
申请号：US13614058
申请日：2012-09-13
申请人： Hiroaki Kawai , Koichi Shimomura , Hideaki Ishihara , Shintaro Sasai
发明人： Hiroaki Kawai , Koichi Shimomura , Hideaki Ishihara , Shintaro Sasai
IPC分类号： H02J7/00 , H02J7/14 , H02J7/04 , B60L11/18 , B60R16/033
CPC分类号： H02J7/041 , B60L11/1818 , B60R16/033 , H02J7/044 , H02J7/045 , H02J7/1446 , Y02T10/92
摘要： An operating machine includes: a charging time estimation unit that estimates a first estimated charging time required to restore a capacity of a first battery from a first estimated residual capacity to a target capacity value of the first battery and a second estimated charging time required to restore a capacity of a second battery from a second estimated residual capacity to a target capacity value of the second battery; a capacity management implementation unit that implements capacity management on the first battery and the second battery such that the first battery is charged for the first estimated charging time and the second battery is charged for the second estimated charging time; and a discharge amount limitation unit for limiting a discharge amount of the second battery during an idling stop so that a residual capacity of the second battery after discharge is maintained at or above a set value.
摘要翻译：操作机包括：充电时间估计单元，其估计将第一电池的容量从第一估计剩余容量恢复到第一电池的目标容量值所需的第一估计充电时间，以及恢复所需的第二估计充电时间从第二估计剩余容量到第二电池的目标容量值的第二电池的容量; 容量管理执行单元，其对所述第一电池和所述第二电池进行容量管理，使得所述第一电池对于所述第一估计充电时间进行充电，并且所述第二电池对所述第二估计充电时间进行充电; 以及排出量限制单元，用于在怠速停止期间限制第二电池的排出量，使得排出后的第二电池的剩余容量保持在设定值以上。

10. 发明申请

US20130082517A1 OPERATING MACHINE 有权
标题翻译：操作机
公开(公告)号：US20130082517A1
公开(公告)日：2013-04-04
申请号：US13614058
申请日：2012-09-13
申请人： Hiroaki KAWAI , Koichi Shimomura , Hideaki Ishihara , Shintaro Sasai
发明人： Hiroaki KAWAI , Koichi Shimomura , Hideaki Ishihara , Shintaro Sasai
IPC分类号： H02J1/00
CPC分类号： H02J7/041 , B60L11/1818 , B60R16/033 , H02J7/044 , H02J7/045 , H02J7/1446 , Y02T10/92
摘要： An operating machine includes: a charging time estimation unit that estimates a first estimated charging time required to restore a capacity of a first battery from a first estimated residual capacity to a target capacity value of the first battery and a second estimated charging time required to restore a capacity of a second battery from a second estimated residual capacity to a target capacity value of the second battery; a capacity management implementation unit that implements capacity management on the first battery and the second battery such that the first battery is charged for the first estimated charging time and the second battery is charged for the second estimated charging time; and a discharge amount limitation unit for limiting a discharge amount of the second battery during an idling stop so that a residual capacity of the second battery after discharge is maintained at or above a set value.
摘要翻译：操作机包括：充电时间估计单元，其估计将第一电池的容量从第一估计剩余容量恢复到第一电池的目标容量值所需的第一估计充电时间，以及恢复所需的第二估计充电时间从第二估计剩余容量到第二电池的目标容量值的第二电池的容量; 容量管理执行单元，其对所述第一电池和所述第二电池进行容量管理，使得所述第一电池对于所述第一估计充电时间进行充电，并且所述第二电池对所述第二估计充电时间进行充电; 以及排出量限制单元，用于在怠速停止期间限制第二电池的排出量，使得排出后的第二电池的剩余容量保持在设定值以上。

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