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1. 发明授权

US5431769A Method and system for plasma treatment 失效
标题翻译：等离子体处理方法和系统
公开(公告)号：US5431769A
公开(公告)日：1995-07-11
申请号：US140455
申请日：1993-10-25
申请人： Toshiro Kisakibaru , Akira Kojima , Takayuki Fukunaga , Yoshinori Hata , Yasushi Kato , Isao Honbori , Tomohide Jozaki , Hirohisa Kooriyama
发明人： Toshiro Kisakibaru , Akira Kojima , Takayuki Fukunaga , Yoshinori Hata , Yasushi Kato , Isao Honbori , Tomohide Jozaki , Hirohisa Kooriyama
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/00
CPC分类号： H01J37/32862 , H01J37/32623 , H01J37/32678 , H01J37/32688
摘要： A plasma treatment method and system allowing the plasma intensity to be controllably distributed perpendicularly to the inner wall and ensuring effective and uniform treatment in the case of executing plasma cleaning, plasma CVD, RIE or the like. In the plasma treatment where plasma is generated within a chamber 1 for plasma treatment, magnetic field 31 is applied perpendicularly to the inner wall of the chamber to produce plasma whose intensity is directed perpendicularly to the inner wall of the chamber or in parallel with the surface to be treated. Further, the magnetic filed 31 rendered into a revolving field 32 may be applied to rotate the plasma to accomplish a uniform and effective treatment.
摘要翻译：在等离子体清洗，等离子体CVD，RIE等的情况下，等离子体处理方法和等离子体强度可以与内壁垂直地可控制地分布，确保有效且均匀的处理。在用于等离子体处理的室1内产生等离子体的等离子体处理中，垂直于室的内壁施加磁场31，产生强度垂直于室内壁或与表面平行的等离子体待处理此外，可以施加提供到旋转场32中的磁场31以旋转等离子体以实现均匀且有效的处理。

2. 发明授权

US5945008A Method and apparatus for plasma control 失效
标题翻译：等离子体控制的方法和装置
公开(公告)号：US5945008A
公开(公告)日：1999-08-31
申请号：US534042
申请日：1995-09-26
申请人： Toshiro Kisakibaru , Akira Kojima , Yasushi Kato , Isao Honbori , Satoshi Bannai , Tomohiro Chiba , Toshitaka Kawashima
发明人： Toshiro Kisakibaru , Akira Kojima , Yasushi Kato , Isao Honbori , Satoshi Bannai , Tomohiro Chiba , Toshitaka Kawashima
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32623 , H01J37/32697
摘要： The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.
摘要翻译：本发明提供了一种等离子体控制方法，其中在与处理室中产生的等离子体气氛中的待处理物体的表面垂直的方向上产生电场，并且在平行于该处理室的方向上产生另一个电场表面，并且通过控制由两个电场组成的复合电场来控制等离子体气氛中的离子或电子的方向。本发明还提供了一种用于等离子体控制的装置，其具有用于在垂直于物体表面的方向上产生电场的垂直电场产生装置，以及平行电场产生装置，用于在平行于该物体的方向上产生电场对象的表面。

3. 发明授权

US06255220B1 Method and apparatus for plasma control 失效
标题翻译：等离子体控制的方法和装置
公开(公告)号：US06255220B1
公开(公告)日：2001-07-03
申请号：US09348923
申请日：1999-07-06
申请人： Toshiro Kisakibaru , Akira Kojima , Yasushi Kato , Isao Honbori , Satoshi Bannai , Tomohiro Chiba , Toshitaka Kawashima
发明人： Toshiro Kisakibaru , Akira Kojima , Yasushi Kato , Isao Honbori , Satoshi Bannai , Tomohiro Chiba , Toshitaka Kawashima
IPC分类号： H01L21302
CPC分类号： H01J37/32623 , H01J37/32697
摘要： The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.
摘要翻译：本发明提供了一种等离子体控制方法，其中在与处理室中产生的等离子体气氛中的待处理物体的表面垂直的方向上产生电场，并且在平行于该处理室的方向上产生另一个电场表面，并且通过控制由两个电场组成的复合电场来控制等离子体气氛中的离子或电子的方向。本发明还提供了一种用于等离子体控制的装置，其具有用于在垂直于物体表面的方向上产生电场的垂直电场产生装置，以及平行电场产生装置，用于在平行于该物体的方向上产生电场对象的表面。

4. 发明授权

US06777355B2 Manufacturing apparatus and manufacturing method for semiconductor device 失效
标题翻译：半导体器件的制造装置及其制造方法
公开(公告)号：US06777355B2
公开(公告)日：2004-08-17
申请号：US10718392
申请日：2003-11-20
申请人： Toshiro Kisakibaru , Isao Honbori , Yasushi Kato , Toshikazu Suzuki , Hirohisa Koriyama , Hayato Iwamoto , Hitoshi Abe
发明人： Toshiro Kisakibaru , Isao Honbori , Yasushi Kato , Toshikazu Suzuki , Hirohisa Koriyama , Hayato Iwamoto , Hitoshi Abe
IPC分类号： H01L2131
CPC分类号： H01L21/67017 , Y10S438/907
摘要： A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.
摘要翻译：一种用于半导体器件的制造设备，包括：用于安装多个半导体制造和处理设备的洁净室; 连接到洁净室的供给口的外部空气净化装置，用于将净化后的外部空气供给到净化室内; 安装在洁净室内的通风道; 连接到所述公共空气管道部分的第一空气净化和通风装置，用于将一部分净化的外部空气清洁和通风到共用空气管道部分; 单独的空气管道部分从公共空气管道部分分支并连接到每个所述半导体制造和处理装置; 以及第二空气净化和通风装置，其插入在单独的空气管道部分和用于清洁和通风供给到每个半导体制造和处理设备的空气的每个半导体制造和处理设备之间。

5. 发明授权

US06670290B2 Manufacturing apparatus and manufacturing method for semiconductor device 失效
公开(公告)号：US06670290B2
公开(公告)日：2003-12-30
申请号：US09978614
申请日：2001-10-16
申请人： Toshiro Kisakibaru , Isao Honbori , Yasushi Kato , Toshikazu Suzuki , Hirohisa Koriyama , Hayato Iwamoto , Hitoshi Abe
发明人： Toshiro Kisakibaru , Isao Honbori , Yasushi Kato , Toshikazu Suzuki , Hirohisa Koriyama , Hayato Iwamoto , Hitoshi Abe
IPC分类号： H01L2131
CPC分类号： H01L21/67017 , Y10S438/907
摘要： A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

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