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1. 发明授权

US5091138A Production of wholly aromatic polyester film 失效
标题翻译：生产纯粹的芳香聚酯薄膜
公开(公告)号：US5091138A
公开(公告)日：1992-02-25
申请号：US648642
申请日：1991-01-31
申请人： Toshinori Ishii , Masanori Sato
发明人： Toshinori Ishii , Masanori Sato
IPC分类号： B29C55/12 , B29K67/00 , B29L7/00 , C08G63/06 , C08G63/682 , C08J5/18
CPC分类号： C08J5/18 , C08G63/065 , C08J2367/04
摘要： A wholly aromatic polyester film, (A) which is made of a wholly aromatic polyester consisting essentially of the following recurring units I and II ##STR1## wherein the aromatic ring may be optionally substituted with at least one substituent selected from the group consisting of an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a halogen atom and a phenyl group, said wholly aromatic polyester comprising 10 to 90 mol % of the recurring unit I and 90 to 10 mol % of the recurring unit II, being capable of forming an optically anisotropic melt phase, and having a melt strength at a temperature 20.degree. C. higher than its transition temperature to liquid crystal of at least 2.0 g/mm.sup.2 ; (B) said film having an oxygen permeability of not more than 1.0 cc.20.mu./m.sup.2.day.atm at a temperature 20.degree. C. and a relative humidity 65%; and (C) said film having thermal shrinkages both in the machine direction and in a direction perpendicular thereto of not more than 1% at a temperature 250.degree. C. Said wholly aromatic polyester film can be produced by melt-extruding a wholly aromatic polyester to form into a film under conditions that a shear rate applied to the wholly aromatic polyester in a molten state at the exit of the molding die is not less than 500 sec.sup.-1.

2. 发明授权

US5053481A Wholly aromatic polyester film 失效
标题翻译：纯粹的芳香聚酯薄膜
公开(公告)号：US5053481A
公开(公告)日：1991-10-01
申请号：US365729
申请日：1989-06-14
申请人： Toshinori Ishii , Masanori Sato
发明人： Toshinori Ishii , Masanori Sato
IPC分类号： B29C55/12 , B29K67/00 , B29L7/00 , C08G63/06 , C08G63/682 , C08J5/18
CPC分类号： C08J5/18 , C08G63/065 , C08J2367/04
摘要： A wholly aromatic polyester film, (A) which is made of a wholly aromatic polyester consisting essentially of the following recurring units I and II ##STR1## wherein the aromatic ring may be optionally substituted with at least one substituent selected from the group consisting of an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a halogen atom and a phenyl group, said wholly aromatic polyetser comprising 10 to 90 mol % of the recurring unit I and 90 to 10 mol % of the recurring unti II, being capable of forming an optically anisotropic melt phase, and having a melt strength at a temperature 20.degree. C. higher than its transition temperature to liquid crystal of at least 2.0 g/mm.sup.2 ; (B) said film having an oxygen permeability of not more than 1.0 cc. 20 .mu./m.sup.2. day. atm at a temperature 20.degree. C. and a relative humidity 65%; and (C) said film having thermal shrinkages both in the machine direction and in a direction perpendicular thereto of not more than 1% at a temperature 250.degree. C. Said wholly aromatic polyester film can be produced by melt-extruding a wholly aromatic polyester to form into a film under conditions that a shear rate applied to the wholly aromatic polyester in a molten state at the exit of the molding die is not less than 500 sec.sup.-1.

3. 发明申请

US20070181868A1 Silicon electrode plate for plasma etching with superior durability 有权
标题翻译：用于等离子体蚀刻的硅电极板，具有优异的耐久性
公开(公告)号：US20070181868A1
公开(公告)日：2007-08-09
申请号：US10599440
申请日：2005-03-30
申请人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
发明人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
IPC分类号： H01L29/06
CPC分类号： H01J37/32009 , H01J37/3255
摘要： This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
摘要翻译：用于等离子体蚀刻的硅电极板是用于等离子体蚀刻的硅电极板，具有优异的耐久性，包括硅单晶，其原子比在3至11ppba的硼中，并且还包含总共0.5至6ppba的任一或磷和砷两者。

4. 发明申请

US20050007130A1 Contact probe and probe device 失效
标题翻译：接触探针和探针装置
公开(公告)号：US20050007130A1
公开(公告)日：2005-01-13
申请号：US10902779
申请日：2004-08-02
申请人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
发明人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
IPC分类号： G01R1/073 , G01R31/02
CPC分类号： G01R1/07342
摘要： A probe device having a contact probe including a film, a plurality of wiring patterns formed on the film with each wiring pattern having a front end portion projecting from the film so as to form contact pins, and a metal layer provided on the film. In one embodiment, the contact probe device includes first and second contact probes connected to each other, the first contact probe including a first film, and a plurality of first wiring patterns formed on the first film, each first wiring pattern having a front end portion projecting from the first film so as to form contact pins. The second contact probe includes a second film, and a plurality of second wiring patterns formed on the second film. The plurality of second wiring patterns are connected to the plurality of first wiring patterns, and the second contact probe is formed separately from the first contact probe.
摘要翻译：一种探针装置，其具有包括膜的接触探针，形成在所述膜上的多个布线图案，每个布线图案具有从所述膜突出以形成接触针的前端部，以及设置在所述膜上的金属层。在一个实施例中，接触探针装置包括彼此连接的第一和第二接触探针，第一接触探针包括第一膜和形成在第一膜上的多个第一布线图案，每个第一布线图案具有前端部分从第一膜突出以形成接触针。第二接触探针包括第二膜和形成在第二膜上的多个第二布线图案。多个第二布线图案连接到多个第一布线图案，并且第二接触探针与第一接触探针分开形成。

5. 发明授权

US5783057A Method of purifying copper electrolytic solution 失效
标题翻译：铜电解液净化方法
公开(公告)号：US5783057A
公开(公告)日：1998-07-21
申请号：US804558
申请日：1997-02-24
申请人： Masatoshi Tomita , Hiroshi Hiai , Toshinori Ishii
发明人： Masatoshi Tomita , Hiroshi Hiai , Toshinori Ishii
IPC分类号： C25C1/12 , C25C7/06 , C25D21/18
CPC分类号： C25C7/06 , C25C1/12 , Y02P10/212
摘要： A method of purifying a copper electrolytic solution circulated in a copper electrorefining system, wherein a portion of the solution is withdrawn and recycled to the system after purification treatment. The purification treatment includes the addition of a hydrosulfide to the withdrawn solution to generate only the necessary quantity of hydrogen sulfide gas required in the reaction. The hydrogen sulfide gas generated is utilized for purification treatment. One process comprises dividing the solution withdrawn into two portions. Sodium hydrosulfide is added to the first portion to precipitate and separate metals as sulfides. Excess sodium hydrosulfide is further added to the first portion for reaction with residual sulfuric acid in the solution to generate hydrogen sulfide gas, then contacting the second divided portion with the hydrogen sulfide gas thus produced to precipitate and separate metals in the form of sulfides. The filtrate is then recycled to an electrorefining system. There is also provided a process comprising contacting the solution with hydrogen sulfide gas to separate and remove Cu, As, Sb and Bi in the form of sulfides from the solution, then dividing the solution into two portions; The first portion is recycled to the electrorefining system, whereas excess sodium hydrosulfide is added to the second portion to separate and recover Ni as nickel sulfide from the solution. Resultant hydrogen sulfide gas is used for contact with solution to be treated.
摘要翻译：一种纯化在铜电解精炼系统中循环的铜电解液的方法，其中一部分溶液在净化处理后被抽出并再循环至系统。净化处理包括向所提取的溶液中加入氢硫化物以仅产生反应所需的必需量的硫化氢气体。产生的硫化氢气体用于净化处理。一个方法包括将溶液分离成两部分。将氢硫化钠加入到第一部分以沉淀并分离作为硫化物的金属。进一步向第一部分加入过量的氢硫化钠以与溶液中的残余硫酸反应以产生硫化氢气体，然后使第二分开部分与由此产生的硫化氢气体接触以沉淀并分离硫化物形式的金属。然后将滤液再循环至电解精炼系统。还提供了一种方法，其包括使溶液与硫化氢气体接触，从溶液中分离并除去硫化物形式的Cu，As，Sb和Bi，然后将溶液分成两部分; 将第一部分再循环至电解精炼系统，而将过量的氢硫化钠加入到第二部分中以从溶液中分离和回收作为硫化镍的Ni。所得硫化氢气体用于与待处理溶液接触。

6. 发明授权

US07015710B2 Contact probe and probe device 失效
公开(公告)号：US07015710B2
公开(公告)日：2006-03-21
申请号：US10902779
申请日：2004-08-02
申请人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
发明人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
IPC分类号： G01R31/02
CPC分类号： G01R1/07342
摘要： A probe device having a contact probe including a film, a plurality of wiring patterns formed on the film with each wiring pattern having a front end portion projecting from the film so as to form contact pins, and a metal layer provided on the film. In one embodiment, the contact probe device includes first and second contact probes connected to each other, the first contact probe including a first film, and a plurality of first wiring patterns formed on the first film, each first wiring pattern having a front end portion projecting from the first film so as to form contact pins. The second contact probe includes a second film, and a plurality of second wiring patterns formed on the second film. The plurality of second wiring patterns are connected to the plurality of first wiring patterns, and the second contact probe is formed separately from the first contact probe.

7. 发明申请

US20050222735A1 Control apparatus and method for automatic transmission 有权
标题翻译：自动变速箱控制装置及方法
公开(公告)号：US20050222735A1
公开(公告)日：2005-10-06
申请号：US11086417
申请日：2005-03-23
申请人： Katsutoshi Usuki , Yuzo Yano , Toshinori Ishii , Masahiro Hamano , Yuichi Imamura , Mitsuo Kunou
发明人： Katsutoshi Usuki , Yuzo Yano , Toshinori Ishii , Masahiro Hamano , Yuichi Imamura , Mitsuo Kunou
IPC分类号： F16H61/04 , F16H59/24 , F16H59/38 , F16H59/44 , F16H61/00 , F16H61/06 , F16H61/68 , F16H61/684 , F16H61/686 , G06F19/00
CPC分类号： F16H61/061 , F16H59/24 , F16H61/686 , F16H2059/385 , F16H2061/0087 , F16H2061/064 , F16H2306/52 , F16H2342/04 , Y10T477/6939
摘要： In control apparatus and method for an automatic transmission, an initial hydraulic reference value is calculated which provides a reference value of an initial hydraulic from a shift kind and a throttle opening angle or from the parameter value corresponding to the throttle opening angle and a correction quantity is calculated for the reference value of the initial hydraulic on the basis of squares of a revolution speed of a piston calculated and of the revolution speed of the piston detected, the initial hydraulic reference value being set to the initial hydraulic during the ordinary gear shift and the initial hydraulic reference value being corrected by a correction quantity to set the corrected initial hydraulic reference value to the initial hydraulic when the gear shift to a predetermined target gear shift stage is carried out at a drive point different from during the ordinary gear shift.
摘要翻译：在用于自动变速器的控制装置和方法中，计算初始液压基准值，该初始液压参考值提供来自换档类型和节气门开度的初始液压的参考值，或者从与节气门开度角对应的参数值和校正量基于所计算的活塞的转速和检测到的活塞的转速的平方根，初始液压参考值被设定为普通变速时的初始液压，并且当在与普通换档期间不同的驱动点进行换档到预定目标换档级时，通过校正量来校正初始液压参考值，以将校正的初始液压参考值设定为初始液压。

8. 发明授权

US06919732B2 Contact probe and probe device 失效
公开(公告)号：US06919732B2
公开(公告)日：2005-07-19
申请号：US10902859
申请日：2004-08-02
申请人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
发明人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
IPC分类号： G01R1/073 , G01R31/02
CPC分类号： G01R1/07342
摘要： A probe device having a contact probe including a film, a plurality of wiring patterns formed on the film with each wiring pattern having a front end portion projecting from the film so as to form contact pins, and a metal layer provided on the film. In one embodiment, the contact probe device includes first and second contact probes connected to each other, the first contact probe including a first film, and a plurality of first wiring patterns formed on the first film, each first wiring pattern having a front end portion projecting from the first film so as to form contact pins. The second contact probe includes a second film, and a plurality of second wiring patterns formed on the second film. The plurality of second wiring patterns are connected to the plurality of first wiring patterns, and the second contact probe is formed separately from the first contact probe.

9. 发明申请

US20050001643A1 Contact probe and probe device 失效
公开(公告)号：US20050001643A1
公开(公告)日：2005-01-06
申请号：US10902861
申请日：2004-08-02
申请人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
发明人： Hideaki Yoshida , Toshinori Ishii , Atushi Matsuda , Mituyoshi Ueki , Noriyoshi Tachikawa , Tadashi Nakamura , Naoki Katou , Shou Tai , Hayato Sasaki , Naohumi Iwamoto , Akihumi Mishima , Toshiharu Hiji , Akihiro Masuda
IPC分类号： G01R1/073 , G01R31/02
CPC分类号： G01R1/07342
摘要： A probe device having a contact probe including a film, a plurality of wiring patterns formed on the film with each wiring pattern having a front end portion projecting from the film so as to form contact pins, and a metal layer provided on the film. In one embodiment, the contact probe device includes first and second contact probes connected to each other, the first contact probe including a first film, and a plurality of first wiring patterns formed on the first film, each first wiring pattern having a front end portion projecting from the first film so as to form contact pins. The second contact probe includes a second film, and a plurality of second wiring patterns formed on the second film. The plurality of second wiring patterns are connected to the plurality of first wiring patterns, and the second contact probe is formed separately from the first contact probe.

10. 发明授权

US07820007B2 Silicon electrode plate for plasma etching with superior durability 有权
标题翻译：用于等离子体蚀刻的硅电极板，具有优异的耐久性
公开(公告)号：US07820007B2
公开(公告)日：2010-10-26
申请号：US10599440
申请日：2005-03-30
申请人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
发明人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
IPC分类号： H01L21/00
CPC分类号： H01J37/32009 , H01J37/3255
摘要： This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
摘要翻译：用于等离子体蚀刻的硅电极板是用于等离子体蚀刻的硅电极板，具有优异的耐久性，包括硅单晶，其原子比在3至11ppba的硼中，并且还包含总共0.5至6ppba的任一或磷和砷两者。

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