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1. 发明授权

US07820007B2 Silicon electrode plate for plasma etching with superior durability 有权
标题翻译：用于等离子体蚀刻的硅电极板，具有优异的耐久性
公开(公告)号：US07820007B2
公开(公告)日：2010-10-26
申请号：US10599440
申请日：2005-03-30
申请人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
发明人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
IPC分类号： H01L21/00
CPC分类号： H01J37/32009 , H01J37/3255
摘要： This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
摘要翻译：用于等离子体蚀刻的硅电极板是用于等离子体蚀刻的硅电极板，具有优异的耐久性，包括硅单晶，其原子比在3至11ppba的硼中，并且还包含总共0.5至6ppba的任一或磷和砷两者。

2. 发明申请

US20120193030A1 SILICON ELECTRODE PLATE FOR PLASMA ETCHING 审中-公开
标题翻译：用于等离子体蚀刻的硅电极板
公开(公告)号：US20120193030A1
公开(公告)日：2012-08-02
申请号：US13330110
申请日：2011-12-19
申请人： Takashi KOMEKYU , Kota TAKABATAKE
发明人： Takashi KOMEKYU , Kota TAKABATAKE
IPC分类号： C23F1/08
CPC分类号： H01J37/3255
摘要： [Problems] To provide a silicon electrode plate for plasma etching that suppresses the unevenness of the surface caused by plasma etching so as to ensure uniform etching.[Means for Solving the Problems] The silicon electrode plate for plasma etching is constituted by single-crystal silicon in which B and Al have been added as dopants, wherein the concentration of Al is equal to or greater than 1×1013 atoms/cm3. In the silicon electrode plate for plasma etching, the electrical characteristic of single-crystal silicon is made uniform in a plane. Thus, the occurrence of unevenness of the surface may be minimized when the surface is depleted during plasma etching, and the occurrence of cracks may be suppressed.
摘要翻译： [问题]提供一种用于等离子体蚀刻的硅电极板，其抑制由等离子体蚀刻引起的表面不均匀性，以确保均匀的蚀刻。解决问题的手段用于等离子体蚀刻的硅电极板由其中添加了B和Al作为掺杂剂的单晶硅构成，其中Al的浓度等于或大于1×1013原子/ cm3。在用于等离子体蚀刻的硅电极板中，使单晶硅的电特性在平面内均匀。因此，当在等离子体蚀刻期间表面耗尽时，表面的不均匀性的发生可能被最小化，并且可以抑制裂纹的发生。

3. 发明申请

US20070181868A1 Silicon electrode plate for plasma etching with superior durability 有权
标题翻译：用于等离子体蚀刻的硅电极板，具有优异的耐久性
公开(公告)号：US20070181868A1
公开(公告)日：2007-08-09
申请号：US10599440
申请日：2005-03-30
申请人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
发明人： Hideki Fujiwara , Kazuhiro Ikezawa , Hiroaki Taguchi , Naofumi Iwamoto , Toshinori Ishii , Takashi Komekyu
IPC分类号： H01L29/06
CPC分类号： H01J37/32009 , H01J37/3255
摘要： This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
摘要翻译：用于等离子体蚀刻的硅电极板是用于等离子体蚀刻的硅电极板，具有优异的耐久性，包括硅单晶，其原子比在3至11ppba的硼中，并且还包含总共0.5至6ppba的任一或磷和砷两者。

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