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1. 发明申请

US20100085527A1 LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：液晶电光装置及其制造方法
公开(公告)号：US20100085527A1
公开(公告)日：2010-04-08
申请号：US12631908
申请日：2009-12-07
申请人： Toshimitsu KONUMA , Takeshi NISHI , Michio SHIMIZU , Harumi MORI , Kouji MORIYA , Satoshi MURAKAMI
发明人： Toshimitsu KONUMA , Takeshi NISHI , Michio SHIMIZU , Harumi MORI , Kouji MORIYA , Satoshi MURAKAMI
IPC分类号： G02F1/1339
CPC分类号： G02F1/141 , G02F1/133711 , G02F1/133788 , G02F1/1416
摘要： A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid crystal layer being uniaxially oriented by virtue of said orientation control means, wherein means for suppressing an orientation control effect of said orientation control means with respect to said liquid crystal layer is provided between said liquid crystal layer and said orientation control means.
摘要翻译：一种液晶装置，包括：一对基板，其上具有电极装置; 设置在至少一个所述基板上的取向控制装置; 以及介于所述基板之间的铁电或反铁电液晶层，所述液晶层通过所述取向控制装置单轴取向，其中提供了用于抑制所述取向控制装置相对于所述液晶层的取向控制效果的装置在所述液晶层和所述取向控制装置之间。

2. 发明申请

US20090269873A1 LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：液晶电光装置及其制造方法
公开(公告)号：US20090269873A1
公开(公告)日：2009-10-29
申请号：US12500026
申请日：2009-07-09
申请人： Toshimitsu KONUMA , Takeshi NISHI , Michio SHIMIZU , Harumi MORI , Kouji MORIYA , Satoshi MURAKAMI
发明人： Toshimitsu KONUMA , Takeshi NISHI , Michio SHIMIZU , Harumi MORI , Kouji MORIYA , Satoshi MURAKAMI
IPC分类号： H01L21/28 , B05D5/06
CPC分类号： G02F1/141 , G02F1/133711 , G02F1/133788 , G02F1/1416
摘要： A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid crystal layer being uniaxially oriented by virtue of said orientation control means, wherein means for suppressing an orientation control effect of said orientation control means with respect to said liquid crystal layer is provided between said liquid crystal layer and said orientation control means.
摘要翻译：一种液晶装置，包括：一对基板，其上具有电极装置; 设置在至少一个所述基板上的取向控制装置; 以及介于所述基板之间的铁电或反铁电液晶层，所述液晶层通过所述取向控制装置单轴取向，其中提供了用于抑制所述取向控制装置相对于所述液晶层的取向控制效果的装置在所述液晶层和所述取向控制装置之间。

3. 发明申请

US20090284701A1 LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
公开(公告)号：US20090284701A1
公开(公告)日：2009-11-19
申请号：US12512339
申请日：2009-07-30
申请人： Toshimitsu KONUMA , Takeshi NISHI , Michio SHIMIZU , Harumi MORI , Kouji MORIYA , Satoshi MURAKAMI
发明人： Toshimitsu KONUMA , Takeshi NISHI , Michio SHIMIZU , Harumi MORI , Kouji MORIYA , Satoshi MURAKAMI
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/141 , G02F1/133711 , G02F1/133788 , G02F1/1416
摘要： A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid crystal layer being uniaxially oriented by virtue of said orientation control means, wherein means for suppressing an orientation control effect of said orientation control means with respect to said liquid crystal layer is provided between said liquid crystal layer and said orientation control means.

4. 发明申请

US20140054987A1 ROTATING ELECTRICAL MACHINE 审中-公开
标题翻译：旋转电机
公开(公告)号：US20140054987A1
公开(公告)日：2014-02-27
申请号：US13964625
申请日：2013-08-12
申请人： Tomohiko MIYAMOTO , Satoshi MURAKAMI
发明人： Tomohiko MIYAMOTO , Satoshi MURAKAMI
IPC分类号： H02K9/19
CPC分类号： H02K9/19 , H02K1/32
摘要： A rotating electrical machine includes: a rotor equipped with a first coolant flow channel therein; an end plate arranged at an end of the rotor in an axial direction of the rotating electrical machine, the end plate being equipped with a second coolant flow channel that communicates with the first coolant flow channel and a coolant discharge hole, the coolant discharge hole being provided on a radially inner side with respect to a position of communication with the first coolant flow channel, the coolant discharge hole being configured to discharge a certain amount or more of coolant to an outside of the rotor; and a rotor shaft equipped with a third coolant flow channel that communicates with the second coolant flow channel.
摘要翻译：旋转电机包括：转子，其中配备有第一冷却剂流动通道; 在转子的端部沿旋转电机的轴向布置的端板，端板配备有与第一冷却剂流路连通的第二冷却剂流路和冷却剂排出孔，冷却剂排出孔为设置在相对于与所述第一冷却剂流路连通的位置的径向内侧，所述冷却剂排出孔被配置为将一定量以上的冷却剂排出到所述转子的外部; 以及配备有与第二冷却剂流动通道连通的第三冷却剂流动通道的转子轴。

5. 发明申请

US20130049026A1 SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME 有权
公开(公告)号：US20130049026A1
公开(公告)日：2013-02-28
申请号：US13396625
申请日：2012-02-15
申请人： Satoshi MURAKAMI , Masahiko Hayakawa , Shunpei Yamazaki
发明人： Satoshi MURAKAMI , Masahiko Hayakawa , Shunpei Yamazaki
IPC分类号： H01L33/08
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

6. 发明申请

US20120182208A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120182208A1
公开(公告)日：2012-07-19
申请号：US13432343
申请日：2012-03-28
申请人： Kei TAKAHASHI , Satoshi MURAKAMI , Suguru OZAWA
发明人： Kei TAKAHASHI , Satoshi MURAKAMI , Suguru OZAWA
IPC分类号： G09G3/32
CPC分类号： H01L27/1222 , G09G3/3208 , G09G3/3233 , G09G3/3291 , G09G2300/0408 , G09G2320/0233 , H01L27/1214 , H01L27/1266 , H01L27/3262 , H01L29/78696
摘要： An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.
摘要翻译：目的是提供一种面板系统显示装置，其包括显示部分和外围电路，用于控制可以更精确地操作的一个基板上的显示部分上的显示。显示装置具有设置有包括多个像素的像素部分的显示部分和用于控制设置在基板上的显示部分上的显示的外围电路部分。显示部分和外围电路部分中的每一个包括多个晶体管。对于晶体管的半导体层，使用单晶半导体材料。

7. 发明申请

US20120007095A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120007095A1
公开(公告)日：2012-01-12
申请号：US13238754
申请日：2011-09-21
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
IPC分类号： H01L29/38
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

8. 发明申请

US20110241008A1 SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体显示装置及其制造方法
公开(公告)号：US20110241008A1
公开(公告)日：2011-10-06
申请号：US13162791
申请日：2011-06-17
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
IPC分类号： H01L33/08
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is foamed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译：具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极层间绝缘膜。形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。然后将开口发泡的有机树脂膜用含有无机绝缘膜覆盖，所述无机绝缘膜比有机树脂膜透湿少。此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

9. 发明申请

US20100025688A1 SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME 有权
标题翻译：半导体元件和使用它的显示器件
公开(公告)号：US20100025688A1
公开(公告)日：2010-02-04
申请号：US12533669
申请日：2009-07-31
申请人： Satoshi MURAKAMI , Masahiko HAYAKAWA , Shunpei YAMAZAKI
发明人： Satoshi MURAKAMI , Masahiko HAYAKAWA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer, a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译：提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 在所述有源层上形成的第一氮化物绝缘膜，形成在所述第一氮化物绝缘膜上的感光性有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。

10. 发明申请

US20090075453A1 METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：生产半导体基板的方法
公开(公告)号：US20090075453A1
公开(公告)日：2009-03-19
申请号：US12270753
申请日：2008-11-13
申请人： Satoshi MURAKAMI , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi MURAKAMI , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

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