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1. 发明申请

US20090140270A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090140270A1
公开(公告)日：2009-06-04
申请号：US12277496
申请日：2008-11-25
申请人： Kei TAKAHASHI , Satoshi MURAKAMI , Suguru OZAWA
发明人： Kei TAKAHASHI , Satoshi MURAKAMI , Suguru OZAWA
IPC分类号： H01L27/088 , H01L33/00 , H01L21/77
CPC分类号： H01L27/1222 , G09G3/3208 , G09G3/3233 , G09G3/3291 , G09G2300/0408 , G09G2320/0233 , H01L27/1214 , H01L27/1266 , H01L27/3262 , H01L29/78696
摘要： An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.
摘要翻译：目的是提供一种面板系统显示装置，其包括显示部分和外围电路，用于控制可以更精确地操作的一个基板上的显示部分上的显示。显示装置具有设置有包括多个像素的像素部分的显示部分和用于控制设置在基板上的显示部分上的显示的外围电路部分。显示部分和外围电路部分中的每一个包括多个晶体管。对于晶体管的半导体层，使用单晶半导体材料。

2. 发明申请

US20120182208A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120182208A1
公开(公告)日：2012-07-19
申请号：US13432343
申请日：2012-03-28
申请人： Kei TAKAHASHI , Satoshi MURAKAMI , Suguru OZAWA
发明人： Kei TAKAHASHI , Satoshi MURAKAMI , Suguru OZAWA
IPC分类号： G09G3/32
CPC分类号： H01L27/1222 , G09G3/3208 , G09G3/3233 , G09G3/3291 , G09G2300/0408 , G09G2320/0233 , H01L27/1214 , H01L27/1266 , H01L27/3262 , H01L29/78696
摘要： An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.
摘要翻译：目的是提供一种面板系统显示装置，其包括显示部分和外围电路，用于控制可以更精确地操作的一个基板上的显示部分上的显示。显示装置具有设置有包括多个像素的像素部分的显示部分和用于控制设置在基板上的显示部分上的显示的外围电路部分。显示部分和外围电路部分中的每一个包括多个晶体管。对于晶体管的半导体层，使用单晶半导体材料。

3. 发明申请

US20080142921A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080142921A1
公开(公告)日：2008-06-19
申请号：US11955496
申请日：2007-12-13
申请人： Atsuo ISOBE , Suguru OZAWA
发明人： Atsuo ISOBE , Suguru OZAWA
IPC分类号： H01L27/12 , H01L21/22
CPC分类号： H01L27/1266 , H01L27/124 , H01L29/458
摘要： To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is suppressed. The fabricating method includes the steps of forming an island-shape semiconductor film; doping the island-shape semiconductor film with a first impurity element to form a first impurity region; forming an insulating film so as to cover the island-shape semiconductor film; etching the insulating film to form a first opening and a second opening that partly expose the first impurity region; forming a mask over the insulating film so as to cover the first opening and expose the second opening; doping the first impurity region with a second impurity element to form a second impurity region; and forming a first wiring in contact with the first impurity region exposed at the first opening, and forming a second wiring in contact with the second impurity region exposed at the second opening. Since the second impurity element is added through the second opening, the periphery of the second opening is also doped with a slight amount of the second impurity element. Therefore, the first impurity region and the second wiring are located away a short distance from each other such that they are not shorted.
摘要翻译：为了制造由于寄生电阻引起的导通电流的降低被抑制的肖特基势垒二极管，抑制了导通电流的变化，抑制了关断电流的增大。该制造方法包括形成岛状半导体膜的步骤; 用第一杂质元素掺杂岛状半导体膜以形成第一杂质区; 形成绝缘膜以覆盖岛状半导体膜; 蚀刻绝缘膜以形成部分地暴露第一杂质区的第一开口和第二开口; 在所述绝缘膜上形成掩模以覆盖所述第一开口并暴露所述第二开口; 用第二杂质元素掺杂第一杂质区以形成第二杂质区; 以及形成与在所述第一开口处暴露的所述第一杂质区域接触的第一布线，以及形成与在所述第二开口处露出的所述第二杂质区域接触的第二布线。由于通过第二开口添加第二杂质元素，所以第二开口的周边也掺杂有少量的第二杂质元素。因此，第一杂质区域和第二布线彼此距离很短，使得它们不短路。

4. 发明申请

US20100075470A1 METHOD OF MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100075470A1
公开(公告)日：2010-03-25
申请号：US12550540
申请日：2009-08-31
申请人： Suguru OZAWA , Atsuo ISOBE , Takashi HAMADA , Junpei MOMO , Hiroaki HONDA , Takashi SHINGU , Tetsuya KAKEHATA
发明人： Suguru OZAWA , Atsuo ISOBE , Takashi HAMADA , Junpei MOMO , Hiroaki HONDA , Takashi SHINGU , Tetsuya KAKEHATA
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/76254
摘要： After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.
摘要翻译：在通过附着设置在基底基板上的单晶半导体层通过激光照射之后，通过第一热处理来提高其特性，并且在向单晶半导体层添加赋予导电性的杂质元素之后，进行第二热处理比第一次热处理温度低。

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