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1. 发明授权

US07160820B2 Method of preparing oxide crystal film/substrate composite and solution for use therein 有权
标题翻译：制备氧化物晶体膜/底物复合物的方法及其中使用的溶液
公开(公告)号：US07160820B2
公开(公告)日：2007-01-09
申请号：US10478063
申请日：2002-05-15
申请人： Toshihiro Suga , Yasuji Yamada , Toshihiko Maeda , Seok Beom Kim , Haruhiko Kurosaki , Yutaka Yamada , Izumi Hirabayashi , Yasuhiro Iijima , Tomonori Watanabe , Hisashi Yoshino , Koji Muranaka
发明人： Toshihiro Suga , Yasuji Yamada , Toshihiko Maeda , Seok Beom Kim , Haruhiko Kurosaki , Yutaka Yamada , Izumi Hirabayashi , Yasuhiro Iijima , Tomonori Watanabe , Hisashi Yoshino , Koji Muranaka
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C30B19/02 , C30B29/22 , C30B29/225
摘要： There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
摘要翻译：提供了通过使用液相法在基板上从溶液相形成Y123型氧化物晶体膜来制备氧化物晶体膜和基板的复合材料的方法，其中诸如氧化物晶体膜的破裂，氧化物晶体膜与基板的分离以及基板和溶液之间的反应层的显影可以最小化。用于形成溶液相的溶剂使用BaO-CuO-BaF 2系统或BaO-CuO-Ag-BaF 2系统，并且当具有种子的基底与表面接合的结晶膜与溶液接触以在基板上形成（生长）氧化物晶体膜，将溶液的温度控制在不高于850℃的温度。

2. 发明申请

US20060160357A1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US20060160357A1
公开(公告)日：2006-07-20
申请号：US11376294
申请日：2006-03-16
申请人： Koji Muranaka
发明人： Koji Muranaka
IPC分类号： H01L21/4763
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78603
摘要： An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

3. 发明申请

US20050164520A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050164520A1
公开(公告)日：2005-07-28
申请号：US10863170
申请日：2004-06-08
申请人： Koji Muranaka , Ryoji Nomura , Takeshi Shichi , Tatsuya Arao , Masahiro Katayama
发明人： Koji Muranaka , Ryoji Nomura , Takeshi Shichi , Tatsuya Arao , Masahiro Katayama
IPC分类号： G03F7/11 , G03C1/52 , H01L21/027 , H01L21/312 , H01L21/336 , H01L21/768 , H01L23/522 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/52 , H01L51/56
CPC分类号： H01L21/022 , H01L21/02118 , H01L21/02282 , H01L21/02343 , H01L21/02345 , H01L21/02351 , H01L21/312 , H01L27/3246 , H01L51/0037 , H01L51/0059 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0085 , H01L51/5237 , H01L51/5246 , H01L51/56
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated structure by forming an interlayer insulating layer with an organic resin.
摘要翻译：本发明的一个目的是提供一种半导体器件的制造方法，其中通过均匀地涂覆包括抗蚀剂的溶液来蚀刻所需区域，以及通过形成层间绝缘材料制造具有层压结构的半导体器件的方法层与有机树脂。

4. 发明申请

US20050048289A1 Resist composition and method for manufacturing semiconductor device using the same 有权
标题翻译：用于制造使用该半导体器件的半导体器件的抗蚀剂组合物和方法
公开(公告)号：US20050048289A1
公开(公告)日：2005-03-03
申请号：US10915428
申请日：2004-08-11
申请人： Koji Muranaka , Ryoji Nomura , Keitaro Imai , Shinji Maekawa
发明人： Koji Muranaka , Ryoji Nomura , Keitaro Imai , Shinji Maekawa
IPC分类号： B41J2/01 , G02B5/20 , B41J2/14
CPC分类号： B41J2/01 , B41J2202/09 , G02B5/201 , Y10S438/942 , Y10T428/31504
摘要： An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a manufacturing step of a semiconductor device in which a substance with high safety and that is easily treated can be used as a peeling solution, and which pays attention to an environment. A resist composition of the invention contains water-soluble homopolymer, water, or a solvent that has compatibility with water and can dissolve the water-soluble homopolymer. In addition, a method for manufacturing the semiconductor device of the invention has a step of removing the protective film formed by discharging the resist composition of the invention by using a drawing means with water after using it.
摘要翻译：本发明的目的是提供一种抗蚀剂组合物，其可以通过使用拉伸装置形成膜，并且其作为在蚀刻时使用的保护膜，添加杂质等。此外，目的还在于提供一种半导体装置的制造工序，其中可以使用具有高安全性且易于处理的物质作为剥离溶液，并注意环境。本发明的抗蚀剂组合物含有水溶性均聚物，水或与水相容并能溶解水溶性均聚物的溶剂。此外，本发明的半导体装置的制造方法具有通过在使用了本发明的抗蚀剂组合物后通过使用拉伸装置除去形成的保护膜的步骤。

5. 发明授权

US08278204B2 Methods for forming wiring and manufacturing thin film transistor and droplet discharging method 有权
标题翻译：形成布线和制造薄膜晶体管和液滴放电方法的方法
公开(公告)号：US08278204B2
公开(公告)日：2012-10-02
申请号：US13012055
申请日：2011-01-24
申请人： Shinji Maekawa , Koji Muranaka
发明人： Shinji Maekawa , Koji Muranaka
IPC分类号： H01L21/44
CPC分类号： H01L29/66765 , H01L27/1285 , H01L27/1292 , H01L29/66757
摘要： It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
摘要翻译：当通过喷墨法代表的滴落方法形成布线等时，要求布线的线宽被更宽地小型化。本发明提供了一种根据与传统方法不同的方法来缩小（小型化）线宽的方法。本发明的一个特征是在通过喷墨方法代表的滴下方法形成布线等之前进行等离子体处理。作为等离子体处理的结果，用于形成导电膜的表面被改性为疏液性。因此，通过滴下法形成的布线等可以小型化。

6. 发明授权

US6163713A High frequency transmission line capable of improving an intermodulation distortion characteristic in a high frequency device 失效
标题翻译：高频传输线能够改善高频装置中的互调失真特性
公开(公告)号：US6163713A
公开(公告)日：2000-12-19
申请号：US35366
申请日：1998-03-05
申请人： Katsumi Suzuki , Sadahiko Miura , Takayuki Inoue , Koji Muranaka , Hideaki Zama , Youichi Enomoto , Tadataka Morishita , Shoji Tanaka
发明人： Katsumi Suzuki , Sadahiko Miura , Takayuki Inoue , Koji Muranaka , Hideaki Zama , Youichi Enomoto , Tadataka Morishita , Shoji Tanaka
IPC分类号： H01L39/14 , H01L39/24 , H01P3/08 , H01B12/02
CPC分类号： H01P3/081 , H01L39/143 , H01L39/2422 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.
摘要翻译：在具有电介质基板和导电线的高频传输线路中，该导体线设置在电介质基板上，用于允许电流流过其中，导体线具有双层壁但不具有晶界的非晶界氧化物超导体层。高频传输线是平面电路的形式。优选在电介质基板和非晶界氧化物超导体层之间设置取向氧化物超导体层。

7. 发明授权

US07968461B2 Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method 有权
标题翻译：形成布线的方法，薄膜晶体管的制造方法和液滴喷射方法
公开(公告)号：US07968461B2
公开(公告)日：2011-06-28
申请号：US10575492
申请日：2004-10-25
申请人： Shinji Maekawa , Shunpei Yamazaki , Yuko Tachimura , Koji Muranaka
发明人： Shinji Maekawa , Shunpei Yamazaki , Yuko Tachimura , Koji Muranaka
IPC分类号： H01L21/44
CPC分类号： H01L29/4908 , B41J2/14129 , H01L27/1292 , H01L29/458 , H01L29/66757 , H01L29/66765 , H01L29/78603
摘要： It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. Therefore, the invention provides a method for narrowing (miniaturizing) the line width according to a method different from a conventional method. A region to be liquid-repellent is formed and further, a region to be lyophilic is formed selectively in the region to be liquid-repellent in a surface for forming a pattern, before forming a desired pattern. After that, a pattern for a wiring or the like is formed in the lyophilic region by a dropping method typified by an ink-jetting method for dropping a composition including a conductive material for the wiring or the like.
摘要翻译：当通过喷墨法代表的滴落方法形成布线等时，要求布线的线宽被更宽地小型化。因此，本发明提供了一种根据与传统方法不同的方法来缩小（小型化）线宽的方法。形成防液体的区域，此外，在形成所需图案之前，在用于形成图案的表面中，在要斥液的区域中选择性地形成要进行亲液化的区域。之后，通过滴落方式形成用于布线等的图案，该滴加方法是通过用于滴加包括用于布线的导电材料等的组合物的喷墨方法。

8. 发明申请

US20070218674A1 Methods for Forming Wiring and Manufacturing Thin Film Transistor and Droplet Discharging Method 有权
标题翻译：薄膜晶体管接线和制造方法及滴液放电方法
公开(公告)号：US20070218674A1
公开(公告)日：2007-09-20
申请号：US11749804
申请日：2007-05-17
申请人： Shinji Maekawa , Koji Muranaka
发明人： Shinji Maekawa , Koji Muranaka
IPC分类号： H01L21/445
CPC分类号： H01L29/66765 , H01L27/1285 , H01L27/1292 , H01L29/66757
摘要： It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
摘要翻译：当通过喷墨法代表的滴落方法形成布线等时，要求布线的线宽被更宽地小型化。本发明提供了一种根据与传统方法不同的方法来缩小（小型化）线宽的方法。本发明的一个特征是在通过喷墨法代表的滴下方法形成布线等之前进行等离子体处理。作为等离子体处理的结果，用于形成导电膜的表面被改性为疏液性。因此，通过滴下法形成的布线等可以小型化。

9. 发明申请

US20050112906A1 Methods for forming wiring and manufacturing thin film transistor and droplet discharging method 有权
标题翻译：形成布线和制造薄膜晶体管和液滴放电方法的方法
公开(公告)号：US20050112906A1
公开(公告)日：2005-05-26
申请号：US10970299
申请日：2004-10-21
申请人： Shinji Maekawa , Koji Muranaka
发明人： Shinji Maekawa , Koji Muranaka
IPC分类号： H01L21/20 , H01L21/26 , H01L21/324 , H01L21/336 , H01L21/42 , H01L21/477 , H01L21/77 , H01L21/84
CPC分类号： H01L29/66765 , H01L27/1285 , H01L27/1292 , H01L29/66757
摘要： It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
摘要翻译：当通过喷墨法代表的滴落方法形成布线等时，要求布线的线宽被更宽地小型化。本发明提供了一种根据与传统方法不同的方法来缩小（小型化）线宽的方法。本发明的一个特征是在通过喷墨方法代表的滴下方法形成布线等之前进行等离子体处理。作为等离子体处理的结果，用于形成导电膜的表面被改性为疏液性。因此，通过滴下法形成的布线等可以小型化。

10. 发明授权

US08017455B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08017455B2
公开(公告)日：2011-09-13
申请号：US11376294
申请日：2006-03-16
申请人： Koji Muranaka
发明人： Koji Muranaka
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78603
摘要： An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.
摘要翻译：本发明的目的是提高薄膜之间的粘附性，特别是在绝缘表面上形成的高分子膜，并且本发明提供了一种具有高可靠性的半导体器件和一种以高产率制造半导体器件的方法。本发明的半导体器件包括与包含硅和氮的无机绝缘膜的疏水性表面上的有机绝缘膜紧密接触形成的层压结构。具有疏水性表面的膜是具有等于或大于30°，优选等于或大于40°的水接触角的绝缘膜。

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