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1. 发明授权

US5650376A (Nd, Ba).sub.3 Cu.sub.3 O.sub.7-d superconductor film 失效
标题翻译：（Nd，Ba）3Cu3O7-d超导体膜
公开(公告)号：US5650376A
公开(公告)日：1997-07-22
申请号：US554585
申请日：1995-11-06
申请人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
发明人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
IPC分类号： C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C30B23/08 , C30B29/22 , H01L39/02 , H01L39/12 , H01L39/24 , B32B9/00
CPC分类号： H01L39/126 , Y10S428/93 , Y10S505/701
摘要： A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.
摘要翻译：公开了具有以下组成的超导膜：（Nd，Ba）3Cu 3 O 7 - 其中d是大于0但小于0.5的数。超导薄膜具有与YBa2Cu3O7相同的晶体结构，不同之处在于部分Nd位置和/或部分Ba位置被Ba和Nd原子所占据。

2. 发明授权

US5635716A Method for identifying surface atoms of solid sample and apparatus therefor 失效
标题翻译：确定固体样品表面原子的方法及其设备
公开(公告)号：US5635716A
公开(公告)日：1997-06-03
申请号：US614678
申请日：1996-03-13
申请人： Ziyuan Liu , Tadataka Morishita
发明人： Ziyuan Liu , Tadataka Morishita
IPC分类号： G01N23/20 , G01N23/225 , H01J37/252 , H01J37/26
CPC分类号： G01N23/2251 , H01J37/252 , H01J2237/255 , H01J2237/2561
摘要： The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.
摘要翻译：通过首先在表面上形成能够通过电子束激发能够产生荧光X射线的物质的岛状沉积物来识别构成固体样品表面的原子。然后用电子束使沉积物通电，使得荧光X射线从其发射并在表面上反射。从在没有沉积物的样品表面部分上反射的荧光X射线的全反射的临界角度，可以确定构成表面的原子。还公开了用于执行上述方法的装置，其是常规RHEED / TRAXS装置的修改。

3. 发明授权

US5420103A A-axis superconductor on a yttrium oxide film 失效
标题翻译： A轴超导体在氧化钇膜上
公开(公告)号：US5420103A
公开(公告)日：1995-05-30
申请号：US108772
申请日：1993-08-19
申请人： Akira Oishi , Tadataka Morishita
发明人： Akira Oishi , Tadataka Morishita
IPC分类号： C01G3/00 , C01G1/00 , C30B11/00 , C30B23/02 , C30B25/02 , C30B29/22 , H01L39/24 , B32B9/00
CPC分类号： H01L39/2458 , C30B11/00 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/22 , C30B29/225 , Y10S428/93 , Y10S505/701
摘要： A LnBaCuO-series superconducting thin film is provided over a surface of a substrate of Y.sub.2 O.sub.3 single crystal to form a composite superconductor. Ln stands for Y or a lanthanoid element. The composite superconductor has an improved interfacial diffusion.
摘要翻译：在Y2O3单晶的衬底的表面上提供LnBaCuO系超导薄膜以形成复合超导体。 Ln代表Y或镧系元素。复合超导体具有改善的界面扩散。

4. 发明授权

US5254363A Method for producing oxide films 失效
标题翻译：氧化膜生产方法
公开(公告)号：US5254363A
公开(公告)日：1993-10-19
申请号：US911492
申请日：1992-07-10
申请人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
发明人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
IPC分类号： C23C8/12 , C04B41/50 , C04B41/85 , C04B41/87 , C23C8/16 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/02 , B05D5/12 , B05D3/02
CPC分类号： C04B41/009 , C04B41/5027 , C04B41/5072 , C04B41/85 , C04B41/87 , C23C14/08 , C23C14/24 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/22
摘要： Disclosed is an oxide thin film producing method for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

5. 发明授权

US6163713A High frequency transmission line capable of improving an intermodulation distortion characteristic in a high frequency device 失效
标题翻译：高频传输线能够改善高频装置中的互调失真特性
公开(公告)号：US6163713A
公开(公告)日：2000-12-19
申请号：US35366
申请日：1998-03-05
申请人： Katsumi Suzuki , Sadahiko Miura , Takayuki Inoue , Koji Muranaka , Hideaki Zama , Youichi Enomoto , Tadataka Morishita , Shoji Tanaka
发明人： Katsumi Suzuki , Sadahiko Miura , Takayuki Inoue , Koji Muranaka , Hideaki Zama , Youichi Enomoto , Tadataka Morishita , Shoji Tanaka
IPC分类号： H01L39/14 , H01L39/24 , H01P3/08 , H01B12/02
CPC分类号： H01P3/081 , H01L39/143 , H01L39/2422 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.
摘要翻译：在具有电介质基板和导电线的高频传输线路中，该导体线设置在电介质基板上，用于允许电流流过其中，导体线具有双层壁但不具有晶界的非晶界氧化物超导体层。高频传输线是平面电路的形式。优选在电介质基板和非晶界氧化物超导体层之间设置取向氧化物超导体层。

6. 发明授权

US5421890A Apparatus for producing oxide thin film 失效
标题翻译：氧化物薄膜的制造装置
公开(公告)号：US5421890A
公开(公告)日：1995-06-06
申请号：US98903
申请日：1993-07-29
申请人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
发明人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
IPC分类号： C23C8/12 , C04B41/50 , C04B41/85 , C04B41/87 , C23C8/16 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/02 , C23C16/40
CPC分类号： C04B41/009 , C04B41/5027 , C04B41/5072 , C04B41/85 , C04B41/87 , C23C14/08 , C23C14/24 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/22
摘要： Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.
摘要翻译：公开了一种用于在正确控制氧化物薄膜的组成的同时以高生产率制造具有优异的结晶度和纯度的氧化物薄膜的氧化物薄膜制造方法和装置。在将真空室内的压力降低到1×10 -9 Torr或更小之后，通过蒸发特定的金属元素并将金属元素的蒸气沉积在真空室中的基底上来形成金属薄膜。然后，盖构件向上移动以紧密地邻接到盖接收构件，从而形成用于将基底气密地封闭在真空室中的气密室。随着保持气密室周围的真空度，通过气体管道将O2气体直接引入气密室，以氧化金属薄膜，从而形成氧化物薄膜。同时，气密室内的气体通过气体管道直接排出真空室外。

7. 发明授权

US5310707A Substrate material for the preparation of oxide superconductors 失效
标题翻译：用于制备氧化物超导体的基板材料
公开(公告)号：US5310707A
公开(公告)日：1994-05-10
申请号：US952212
申请日：1992-09-28
申请人： Akira Oishi , Toshio Usui , Hidekazu Teshima , Tadataka Morishita
发明人： Akira Oishi , Toshio Usui , Hidekazu Teshima , Tadataka Morishita
IPC分类号： H01L39/24 , C04B35/50
CPC分类号： H01L39/2458
摘要： A substrate material for the preparation of an oxide superconductor includes two different rare earth elements A' and A" in the IIIa group, Ga, and 0, the atomic ratio of these elements being expressed as A'1-xA"xGaO.sub.3 (where 0
摘要翻译：用于制备氧化物超导体的衬底材料包括IIIa族中的两种不同的稀土元素A'和A“，Ga和O，这些元素的原子比表示为A'1-xA”xGaO3（其中0

8. 发明授权

US5679625A Method of making an oxide superconducting thin film 失效
标题翻译：制造氧化物超导薄膜的方法
公开(公告)号：US5679625A
公开(公告)日：1997-10-21
申请号：US563905
申请日：1995-11-22
申请人： Wataru Ito , Tadataka Morishita , Norio Homma , Yukihisa Yoshida
发明人： Wataru Ito , Tadataka Morishita , Norio Homma , Yukihisa Yoshida
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C23C14/35 , C23C14/46 , C30B29/22 , H01L39/24 , C23C14/34
CPC分类号： C23C14/35 , C23C14/087 , C23C14/46 , H01L39/2435 , Y10S505/731
摘要： A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.
摘要翻译：通过使用包括真空室的二极管平行板型溅射装置制造Y-Ba-Cu-O系材料的超导薄膜的方法，设置在真空室内的基板，并具有基本平坦的表面，超导要形成薄膜，并且一个板状靶用作阴极并且设置在真空室内以平行地面对基板的平坦表面，靶由与超导薄膜相同的材料制成，等离子体气体被引入真空室中，并且施加在阴极和衬底之间的电压，其中该方法包括在阴极和衬底之间施加频率高于40MHz的高频电压以产生等离子体的步骤引入气体，以与阴极变为负极性的高频电压叠加直流电压（V），将直流电压设定为当调节直流电压并控制直流电流的值同时保持直流电压基本上处于设定值时，直流电压随着流经目标的阴极电流的变化而基本上不变。

9. 发明授权

US5466665A Method of manufacturing Y-Ba-Cu-O superconducting thin film 失效
标题翻译：制造Y-Ba-Cu-O超导薄膜的方法
公开(公告)号：US5466665A
公开(公告)日：1995-11-14
申请号：US263957
申请日：1994-06-16
申请人： Yukihisa Yoshida , Wataru Ito , Tadataka Morishita
发明人： Yukihisa Yoshida , Wataru Ito , Tadataka Morishita
IPC分类号： C23C14/34 , C23C14/08 , C23C14/35 , C23C14/44 , C30B23/08 , H01L39/24
CPC分类号： C23C14/3435 , C23C14/087 , C23C14/35 , H01L39/2435
摘要： A method of manufacturing YBCO superconducting thin films is obtained which is capable of providing superconducting thin films having excellent crystallinity in a high yield by introducing a new film formation parameter in a hybrid plasma sputtering method. When a Y--Ba--Cu--O type superconducting thin film is formed by using a parallel plate sputtering method, a high-frequency voltage generated by a high-frequency power source is superimposed on a DC voltage generated by a DC power source and applied to the cathode electrode at the same time, an electrically conductive YBCO target is placed on the cathode, and the film formation conditions are controlled on the basis of the difference between the voltage drops in each ion sheath formed on the substrate and directly on the target by applying a DC voltage to a substrate holder from the DC power source.
摘要翻译：获得制造YBCO超导薄膜的方法，其能够通过在复合等离子体溅射法中引入新的成膜参数，以高产率提供具有优异结晶性的超导薄膜。当使用平行板溅射法形成Y-Ba-Cu-O型超导薄膜时，将由高频电源产生的高频电压叠加在由直流电源产生的直流电压上并施加同时向阴极施加导电YBCO靶，并且基于形成在基板上的每个离子鞘中的直接在目标上的电压降之间的差值来控制成膜条件通过从DC电源向基板保持器施加DC电压。

10. 发明授权

US5369275A Apparatus for solid surface analysis using X-ray spectroscopy 失效
标题翻译：使用X射线光谱法进行固体表面分析的装置
公开(公告)号：US5369275A
公开(公告)日：1994-11-29
申请号：US911740
申请日：1992-07-10
申请人： Toshio Usui , Yuji Aoki , Masayuki Kamei , Tadataka Morishita
发明人： Toshio Usui , Yuji Aoki , Masayuki Kamei , Tadataka Morishita
IPC分类号： G01N23/22 , G01N23/225 , G01Q30/02 , G01Q30/16 , H01J37/26
CPC分类号： G01N23/2252 , G01N23/2206 , G01N23/2208
摘要： An apparatus for solid surface analysis capable of carrying out the X-ray fluorescence analysis of the sample surface according to the characteristic X-rays detected by the energy dispersive X-ray detector. The apparatus can also obtain an enlarged image of the sample surface according to the secondary electrons emitted from the excited sample surface detected by the electron detector. The apparatus can also carry out an X-ray diffraction analysis of the sample surface according to diffracted X-rays detected by the diffracted X-ray detector. The apparatus is also capable of attaching or detaching the energy dispersive X-ray detector easily by incorporating a connection room which can be put in a vacuum state independent of the vacuum chamber.
摘要翻译：一种用于固体表面分析的装置，其能够根据由能量色散X射线检测器检测的特征X射线进行样品表面的X射线荧光分析。该装置还可以根据由电子检测器检测到的被激发的样品表面发射的二次电子获得样品表面的放大图像。该装置还可以根据衍射X射线检测器检测的衍射X射线进行样品表面的X射线衍射分析。该装置还能够通过结合可以独立于真空室的真空状态的连接室容易地附接或分离能量色散X射线检测器。

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