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1. 发明授权

US08835048B2 Power storage device 有权
标题翻译：蓄电装置
公开(公告)号：US08835048B2
公开(公告)日：2014-09-16
申请号：US13153503
申请日：2011-06-06
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Tomokazu Yokoi , Makoto Ishikawa , Toshihiko Takeuchi
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Tomokazu Yokoi , Makoto Ishikawa , Toshihiko Takeuchi
IPC分类号： H01M4/64 , H01G9/042 , H01M10/04 , H01M10/0525 , H01M4/66 , H01M4/134 , H01G11/26 , H01M4/02
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译：提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。因此，可以提高放电容量，并且可以提高循环特性。

2. 发明授权

US10072331B2 Method for forming silicon film and method for manufacturing power storage device 有权
公开(公告)号：US10072331B2
公开(公告)日：2018-09-11
申请号：US13537294
申请日：2012-06-29
申请人： Toshihiko Takeuchi , Kazutaka Kuriki , Makoto Ishikawa
发明人： Toshihiko Takeuchi , Kazutaka Kuriki , Makoto Ishikawa
IPC分类号： C23C16/24 , C23C16/02 , C23C16/56 , H01M4/134 , H01M4/38 , H01G11/30 , H01G11/50 , H01M10/0525
CPC分类号： C23C16/24 , C23C16/0281 , C23C16/56 , H01G11/30 , H01G11/50 , H01M4/134 , H01M4/386 , H01M10/0525 , Y02E60/13
摘要： A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.

3. 发明授权

US09960225B2 Manufacturing method of power storage device 有权
公开(公告)号：US09960225B2
公开(公告)日：2018-05-01
申请号：US13164839
申请日：2011-06-21
申请人： Kazutaka Kuriki , Michiko Konishi , Asami Tadokoro , Yasunori Yoshida , Kiyofumi Ogino , Toshihiko Takeuchi
发明人： Kazutaka Kuriki , Michiko Konishi , Asami Tadokoro , Yasunori Yoshida , Kiyofumi Ogino , Toshihiko Takeuchi
IPC分类号： H01M4/1395 , H01M4/134 , H01G11/06 , H01G11/28 , H01L49/02 , H01G11/12 , H01G11/70 , H01G11/86 , H01M4/04 , H01M4/66 , H01M10/052
CPC分类号： H01L28/84 , H01G11/06 , H01G11/12 , H01G11/28 , H01G11/70 , H01G11/86 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M10/052 , Y02E60/13
摘要： It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.

4. 发明授权

US08658246B2 Manufacturing method of group of whiskers 有权
标题翻译：晶须组的制造方法
公开(公告)号：US08658246B2
公开(公告)日：2014-02-25
申请号：US13248675
申请日：2011-09-29
申请人： Toshihiko Takeuchi , Makoto Ishikawa , Yuki Murakami
发明人： Toshihiko Takeuchi , Makoto Ishikawa , Yuki Murakami
IPC分类号： C23C16/00 , H01L31/18
CPC分类号： H01L31/035209 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02645
摘要： A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.
摘要翻译：将种子基板放置成面对形成衬底，然后引入含有硅的气体并进行化学气相沉积。只要材料能够承受进行减压化学气相沉积的温度，对形成基板的材料的种类没有特别限制。不包括种子原子的一组硅晶须可以直接在地层衬底上生长并与其接触。此外，通过利用晶须组的表面特性，可以将具有一组晶须的基板施加到太阳能电池，锂离子二次电池等。

5. 发明授权

US08815662B2 Method for manufacturing SOI substrate and semiconductor device 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US08815662B2
公开(公告)日：2014-08-26
申请号：US12949283
申请日：2010-11-18
申请人： Kosei Noda , Toshihiko Takeuchi , Makoto Ishikawa
发明人： Kosei Noda , Toshihiko Takeuchi , Makoto Ishikawa
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/268 , H01L21/84 , H01L29/0696 , H01L29/456 , H01L29/66681 , H01L29/7824 , H01L31/022425 , H01L31/02245 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperature of higher than or equal to 100° C. and lower than or equal to 275° C. with use of a silane-based gas not diluted. Heat treatment is performed so that the amorphous semiconductor layer solid-phase epitaxially grows. In such a manner, an SOI substrate including a thick single crystal semiconductor layer is manufactured.
摘要翻译：在设置在玻璃基板上的第一单晶半导体层或其间具有绝缘层的塑料基板上形成非晶半导体层。使用未稀释的硅烷类气体，通过CVD法在高于或等于100℃且低于或等于275℃的沉积温度下形成非晶半导体层。进行热处理，使得非晶半导体层固相外延生长。以这种方式制造包括厚单晶半导体层的SOI衬底。

6. 发明授权

US08640568B2 Bicycle shift control device 有权
标题翻译：自行车换档控制装置
公开(公告)号：US08640568B2
公开(公告)日：2014-02-04
申请号：US12554065
申请日：2009-09-04
申请人： Toshihiko Takeuchi , Kazutaka Fukao , Yoshimitsu Miki
发明人： Toshihiko Takeuchi , Kazutaka Fukao , Yoshimitsu Miki
IPC分类号： F16C1/10
CPC分类号： B62M25/04 , B62K23/06
摘要： A bicycle shift control device is provided with a shifter housing, a gear shifting mechanism, a shift operating member, and a shift switching arrangement. The gear shifting mechanism is disposed in the shifter housing with the gear shifting mechanism having a plurality of operating positions. The shift operating member is movable with respect to the shifter housing to operate the gear shifting mechanism. The shift switching arrangement includes a restricting member movably mounted with respect to the shifter housing between a non-shift restricting position and a shift restricting position. The gear shifting mechanism moves in a first set of the operating positions when the restricting member is in the non-shift restricting position, and moves in a second set of the operating positions that are different from the first set of the operating positions when the restricting member is in the shift restricting position.
摘要翻译：一种自行车变速控制装置设置有变速器壳体，变速机构，变速操作构件和变速切换装置。变速机构设置在变速器壳体中，变速机构具有多个操作位置。变速操作构件可相对于换档器壳体移动以操作变速机构。变速切换装置包括限制构件，其相对于变速器壳体可移动地安装在非换档限制位置和换档限制位置之间。当限制构件处于非换档限制位置时，变速机构在第一组操作位置中移动，并且当限制构件处于非换挡限制位置时，在与第一组操作位置不同的第二组操作位置中移动会员处于班次限制位置。

7. 发明申请

US20110056319A1 BICYCLE SHIFT CONTROL DEVICE 有权
标题翻译：自行车移动控制装置
公开(公告)号：US20110056319A1
公开(公告)日：2011-03-10
申请号：US12554065
申请日：2009-09-04
申请人： Toshihiko Takeuchi , Kazutaka Fukao , Yoshimitsu Miki
发明人： Toshihiko Takeuchi , Kazutaka Fukao , Yoshimitsu Miki
IPC分类号： B62M25/04 , B62M25/00
CPC分类号： B62M25/04 , B62K23/06
摘要： A bicycle shift control device is provided with a shifter housing, a gear shifting mechanism, a shift operating member, and a shift switching arrangement. The gear shifting mechanism is disposed in the shifter housing with the gear shifting mechanism having a plurality of operating positions. The shift operating member is movable with respect to the shifter housing to operate the gear shifting mechanism. The shift switching arrangement includes a restricting member movably mounted with respect to the shifter housing between a non-shift restricting position and a shift restricting position. The gear shifting mechanism moves in a first set of the operating positions when the restricting member is in the non-shift restricting position, and moves in a second set of the operating positions that are different from the first set of the operating positions when the restricting member is in the shift restricting position.
摘要翻译：一种自行车变速控制装置设置有变速器壳体，变速机构，变速操作构件和变速切换装置。变速机构设置在变速器壳体中，变速机构具有多个操作位置。变速操作构件可相对于换档器壳体移动以操作变速机构。变速切换装置包括限制构件，其相对于变速器壳体可移动地安装在非换档限制位置和换档限制位置之间。当限制构件处于非换档限制位置时，变速机构在第一组操作位置中移动，并且当限制构件处于非换挡限制位置时，在与第一组操作位置不同的第二组操作位置中移动会员处于班次限制位置。

8. 外观设计

USD609252S1 Power shovel 有权
标题翻译：电铲
公开(公告)号：USD609252S1
公开(公告)日：2010-02-02
申请号：US29304155
申请日：2008-02-26
申请人： Yoshihide Shimada , Toshihiko Takeuchi
设计人： Yoshihide Shimada , Toshihiko Takeuchi

9. 发明授权

US07227009B2 MT-SP1 polynucleotides and polypeptides 有权
标题翻译： MT-SP1多核苷酸和多肽
公开(公告)号：US07227009B2
公开(公告)日：2007-06-05
申请号：US11253869
申请日：2005-10-18
申请人： Charles S. Craik , Toshihiko Takeuchi , Marc Shuman
发明人： Charles S. Craik , Toshihiko Takeuchi , Marc Shuman
IPC分类号： C12N15/11
CPC分类号： C12N9/6408
摘要： This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.
摘要翻译：本发明提供了与癌症相关的新型膜型丝氨酸蛋白酶（称为MT-SP1），其表达升高。在一个实施方案中，本发明提供了获得预后或在生物体中检测或分期癌症的方法。该方法包括从生物体提供生物样品，并检测样品中膜型丝氨酸蛋白酶1（MT-SP1）的水平，其中与蛋白酶水平相比，膜型丝氨酸蛋白酶水平升高来自正常健康生物体的生物样品表明癌症的存在或阶段。

10. 发明授权

US07030231B1 Membrane type serine protease 1 (MT-SP1) and uses thereof 失效
标题翻译：膜型丝氨酸蛋白酶1（MT-SP1）及其用途
公开(公告)号：US07030231B1
公开(公告)日：2006-04-18
申请号：US09410362
申请日：1999-09-30
申请人： Charles S. Craik , Toshihiko Takeuchi , Marc Shuman
发明人： Charles S. Craik , Toshihiko Takeuchi , Marc Shuman
IPC分类号： C12N15/11
CPC分类号： C12N9/6408
摘要： This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.
摘要翻译：本发明提供了与癌症相关的新型膜型丝氨酸蛋白酶（称为MT-SP1），其表达升高。在一个实施方案中，本发明提供了获得预后或在生物体中检测或分期癌症的方法。该方法包括从生物体提供生物样品，并检测样品中膜型丝氨酸蛋白酶1（MT-SP1）的水平，其中与蛋白酶水平相比，膜型丝氨酸蛋白酶水平升高来自正常健康生物体的生物样品表明癌症的存在或阶段。

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