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1. 发明授权

US08766297B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08766297B2
公开(公告)日：2014-07-01
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/36 , H01L33/42
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

2. 发明申请

US20120043550A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120043550A1
公开(公告)日：2012-02-23
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide ITO , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide ITO , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/60 , H01L33/30 , H01L33/36
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

3. 发明申请

US20130244360A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：制造半导体发光元件的方法
公开(公告)号：US20130244360A1
公开(公告)日：2013-09-19
申请号：US13601231
申请日：2012-08-31
申请人： Taisuke SATO , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
发明人： Taisuke SATO , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/12
CPC分类号： H01L33/12 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/24
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光元件的方法。该方法可以包括将结构体的层叠主体接合到基板主体。结构体包括生长衬底和设置在生长衬底上的层叠主体。堆叠主体包括第一氮化物半导体膜，设置在第一氮化物半导体膜上的发光膜和设置在发光膜上的第二氮化物半导体膜。该方法可以包括去除生长底物。该方法可以包括形成多个堆叠体。该方法可以包括在第一氮化物半导体层的表面中形成不均匀部分。该方法可以包括形成多个半导体发光元件。

4. 发明申请

US20120217524A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 失效
标题翻译：半导体发光装置和发光装置
公开(公告)号：US20120217524A1
公开(公告)日：2012-08-30
申请号：US13206649
申请日：2011-08-10
申请人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/50 , H01L33/40
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/50 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

5. 发明授权

US09006013B2 Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer 有权
标题翻译：制造半导体发光器件和半导体发光器件晶片的方法
公开(公告)号：US09006013B2
公开(公告)日：2015-04-14
申请号：US13405634
申请日：2012-02-27
申请人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
发明人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L33/00 , H01L21/20 , H01L33/20 , H01S5/02 , H01S5/323
CPC分类号： H01L33/007 , H01L21/2011 , H01L33/0079 , H01L33/20 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光器件的方法。该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层，将氮化物层接合到第二衬底，并且通过用光照射氮化物层将第一衬底与氮化物层分离。形成氮化物层包括在凹凸的凹陷内的空间中留下空腔，同时在凹陷上形成薄膜。该膜包括与氮化物层的一部分相同的材料。分离包括使膜吸收部分光，使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

6. 发明授权

US08735925B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08735925B2
公开(公告)日：2014-05-27
申请号：US13450063
申请日：2012-04-18
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/04 , H01L33/06
摘要： Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.
摘要翻译：某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域，氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

7. 发明授权

US08680548B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08680548B2
公开(公告)日：2014-03-25
申请号：US12874568
申请日：2010-09-02
申请人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
发明人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/44 , H01L33/60 , H01L2224/11 , H01L2933/0041 , H01L2933/005
摘要： A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.
摘要翻译：半导体发光器件具有支撑衬底，发光元件和底部填充材料。发光元件包括通过支撑衬底上的凸块接触的基于氮化物的III-V族化合物半导体层。底部填充材料设置在支撑基板和发光元件之间，底部填充材料包括布置在发光元件的端面外侧的肋部，以围绕发光元件的端面。

8. 发明申请

US20110220933A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20110220933A1
公开(公告)日：2011-09-15
申请号：US12874399
申请日：2010-09-02
申请人： Toru GOTODA , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
发明人： Toru GOTODA , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
IPC分类号： H01L33/22 , H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/20 , H01L2933/0091
摘要： A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.
摘要翻译：半导体发光器件具有发光元件，以及第一和第二电极。发光元件在基板上具有基于氮化物的III-V族化合物半导体。第一和第二电极分别设置在发光元件的两侧。发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。第一导电型半导体层设置在发光层和第一电极之间。第二导电型半导体层设置在发光层和第二电极之间。第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

9. 发明申请

US20110215293A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110215293A1
公开(公告)日：2011-09-08
申请号：US12874475
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/22 , H01L33/04 , H01L33/06
摘要： Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.
摘要翻译：某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域，氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

10. 发明授权

US08314437B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08314437B2
公开(公告)日：2012-11-20
申请号：US12874425
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

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