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1. 发明申请

US20130244360A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：制造半导体发光元件的方法
公开(公告)号：US20130244360A1
公开(公告)日：2013-09-19
申请号：US13601231
申请日：2012-08-31
申请人： Taisuke SATO , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
发明人： Taisuke SATO , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/12
CPC分类号： H01L33/12 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/24
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光元件的方法。该方法可以包括将结构体的层叠主体接合到基板主体。结构体包括生长衬底和设置在生长衬底上的层叠主体。堆叠主体包括第一氮化物半导体膜，设置在第一氮化物半导体膜上的发光膜和设置在发光膜上的第二氮化物半导体膜。该方法可以包括去除生长底物。该方法可以包括形成多个堆叠体。该方法可以包括在第一氮化物半导体层的表面中形成不均匀部分。该方法可以包括形成多个半导体发光元件。

2. 发明申请

US20120295377A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：US20120295377A1
公开(公告)日：2012-11-22
申请号：US13222238
申请日：2011-08-31
申请人： Taisuke SATO , Naoharu SUGIYAMA , Tomonari SHIODA , Toshiki HIKOSAKA , Shinya NUNOUE
发明人： Taisuke SATO , Naoharu SUGIYAMA , Tomonari SHIODA , Toshiki HIKOSAKA , Shinya NUNOUE
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/22
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。该方法可以包括通过使用第一处理材料从结构体移除生长衬底。结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。支撑基板结合到氮化物半导体层。该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

3. 发明申请

US20120032213A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120032213A1
公开(公告)日：2012-02-09
申请号：US13029462
申请日：2011-02-17
申请人： Taisuke SATO , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke SATO , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/29083 , H01L2224/29099 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。第二半导体层设置在第一导电层和发光层之间。第一导电层是透明的。第一导电层在与第二半导体层相对的一侧具有第一主表面。第二导电层与第一主表面接触。第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。第三导电层包括平行于第一主表面延伸的延伸部分。延伸部分的至少一部分不被第二导电层覆盖。

4. 发明申请

US20120056220A1 SEMICONDUCTOR LIGHT EMMITING DEVICE 失效
标题翻译：半导体照明装置
公开(公告)号：US20120056220A1
公开(公告)日：2012-03-08
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

5. 发明申请

US20100087817A1 HIGH FREQUENCY OPERATION APPARATUS AND HIGH FREQUENCY OPERATION METHOD 有权
标题翻译：高频操作装置和高频操作方法
公开(公告)号：US20100087817A1
公开(公告)日：2010-04-08
申请号：US12246870
申请日：2008-10-07
申请人： Taisuke SATO
发明人： Taisuke SATO
IPC分类号： A61B18/04
CPC分类号： A61B18/1445 , A61B18/1206 , A61B2017/00212 , A61B2018/00083 , A61B2018/00875
摘要： A high frequency operation apparatus includes: a treatment section provided with electrodes for performing treatment of a living tissue; a switch section connected to each of the electrodes and switching conduction of the electrodes to configure paired electrodes from the electrodes; a power supply section for supplying high frequency power to the living tissue via the paired conductive electrodes; a biological information measuring section for sequentially measuring biological information; a determining section for determining if the measured values of biological information are within a predetermined range; and a control section for performing control so that the high frequency power is supplied to the living tissue by using only the paired electrodes corresponding to the measure value determined as being within the predetermined range.
摘要翻译：高频操作装置包括：处理部，设置有用于进行生物体组织处理的电极; 连接到每个电极的开关部分，并且切换电极的导通以配置来自电极的成对电极; 电源部，其经由所述一对导电电极向所述生物体组织提供高频电力; 用于顺序地测量生物信息的生物信息测量部分; 用于确定生物信息的测量值是否在预定范围内的确定部分; 以及控制部分，用于执行控制，使得通过仅使用与被确定为在预定范围内的测量值相对应的成对电极将高频电力提供给生物体组织。

6. 发明申请

US20080191382A1 BARRIER FILTER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：障碍物过滤器及其制造方法
公开(公告)号：US20080191382A1
公开(公告)日：2008-08-14
申请号：US12029022
申请日：2008-02-11
申请人： Taisuke SATO , Kazuhiro YOSHIDA
发明人： Taisuke SATO , Kazuhiro YOSHIDA
IPC分类号： B29C70/28 , B01D29/05
CPC分类号： B29C45/14336 , B01D29/111 , B01D29/114 , B01D2201/02 , B29L2031/14
摘要： To provide a barrier filter in which a filter element does not peel from a holding frame. A barrier filter has a cylindrical outline and includes holding frame 1 and filter element 40 arranged on a circumference surface, in which holding frame 1 includes small diameter frame 2 forming one end axially, ring-shaped large diameter frame 10 forming the other end, and circumference frame 20 inclined radially in the circumference surface, for linking small and large diameter frames 2 and 10. On an inner surface of large diameter frame 10, thick-walled portion 15 inclined inward to an inclined circumference surface is formed, the filter element is rounded and formed hollow in a truncated cone shape, an upper end edge portion thereof is inserted into small diameter frame 2 and a lower end edge portion is inserted into large diameter frame 10 outside thick-walled portion 15 to hold the filter element.
摘要翻译：提供一种过滤元件不从保持框架剥离的阻挡过滤器。阻挡滤光器具有圆柱形轮廓，并且包括保持框架1和布置在圆周表面上的过滤元件40，其中保持框架1包括形成一端的小直径框架2，形成另一端的环形大直径框架10，以及圆周框架20在圆周表面径向倾斜，用于连接小直径框架2和10.在大直径框架10的内表面上，形成向内倾斜到倾斜圆周表面的厚壁部分15，过滤元件圆形并形成为圆锥形的中空，其上端边缘部分插入小直径框架2中，并且下端边缘部分插入到厚壁部分15外部的大直径框架10中以保持过滤元件。

7. 发明申请

US20100094277A1 HIGH-FREQUENCY SURGICAL DEVICE AND METHOD 审中-公开
标题翻译：高频手术装置及方法
公开(公告)号：US20100094277A1
公开(公告)日：2010-04-15
申请号：US12248523
申请日：2008-10-09
申请人： Taisuke SATO , Manabu ISHIKAWA , Makoto INABA , Takashi MIHORI , Yoshitaka HONDA
发明人： Taisuke SATO , Manabu ISHIKAWA , Makoto INABA , Takashi MIHORI , Yoshitaka HONDA
IPC分类号： A61B18/14
CPC分类号： A61B18/1492 , A61B2017/00575 , A61B2018/00351 , A61B2018/00619 , A61B2018/0063 , A61B2018/00726 , A61B2018/00863
摘要： A high-frequency surgical device includes: a treatment section provided with electrodes for supplying high-frequency power to living tissue of a patent foramen ovale; a high-frequency power supplying section for supplying high-frequency power to living tissue around the electrodes through the electrodes; a blood flow detecting section for detecting intracardiac blood flow information based on biological information inputted from outside; and a control section for controlling high-frequency power to be supplied to the side of electrodes based on the blood flow information.
摘要翻译：高频手术装置包括：治疗部，其设置有用于向卵孔卵泡的卵泡的卵泡的生物体组织提供高频电力的电极; 高频供电部，其通过电极向电极周围的活体组织提供高频电力; 血流检测部，其根据从外部输入的生物信息检测心内血流信息; 以及控制部，用于基于血流信息控制供给到电极侧的高频电力。

8. 发明申请

US20100318081A1 HIGH-FREQUENCY SURGICAL APPARATUS AND HIGH-FREQUENCY SURGICAL METHOD FOR CLOSURE OF PATENT FORAMEN OVALE 有权
标题翻译：高频外科手术器械和高频手术方法
公开(公告)号：US20100318081A1
公开(公告)日：2010-12-16
申请号：US12484650
申请日：2009-06-15
申请人： Taisuke SATO , Manabu ISHIKAWA
发明人： Taisuke SATO , Manabu ISHIKAWA
IPC分类号： A61B18/14
CPC分类号： A61B18/1206 , A61B18/1492 , A61B2017/003 , A61B2018/00351 , A61B2018/124
摘要： A high-frequency surgical apparatus for treating patent foramen ovale in a heart includes a flexible probe which has such a length as to allow the probe to be placed in the patent foramen ovale by passing through the blood vessel; an electrode section which, being placed at a distal end of the probe, has three or more electrodes along a longitudinal direction of the probe; a high-frequency power supply section which supplies predetermined high-frequency power to the patent foramen ovale via the electrode section; a switching section which switches among a plurality of signal lines connected to the three or more electrodes; and a high-frequency power control section which controls switching of the switching section so as to supply the high-frequency power to two electrodes.
摘要翻译：用于治疗心脏中卵孔卵泡的高频手术装置包括：具有如下长度的柔性探针，该探针通过穿过血管将探针放置在卵孔中; 放置在探针的前端的电极部沿着探针的长度方向具有3个以上的电极; 高频电源部，其经由所述电极部向所述卵孔孔提供预定的高频电力; 切换部，其切换与所述三个以上的电极连接的多条信号线; 以及高频功率控制部，其控制切换部的切换，以向两个电极提供高频电力。

9. 发明申请

US20100106158A1 High-frequency surgical apparatus and high-frequency surgical method for closure of patent foramen ovale 有权
标题翻译：高频手术器械和高频手术方法闭合卵圆孔
公开(公告)号：US20100106158A1
公开(公告)日：2010-04-29
申请号：US12257909
申请日：2008-10-24
申请人： Taisuke SATO
发明人： Taisuke SATO
IPC分类号： A61B18/14 , A61B5/053
CPC分类号： A61B18/1477 , A61B18/1492 , A61B2017/00575 , A61B2018/0016 , A61B2018/00351 , A61B2018/00357 , A61B2018/0063 , A61B2018/00702 , A61B2018/00875 , A61B2018/1425 , A61B2018/1497
摘要： A high-frequency surgical PFO closure apparatus used to treat patent foramen ovale in the heart includes a first and second electrodes which grasp living tissue of the patent foramen ovale; a high-frequency power supply section which supplies high-frequency power to the living tissue via the electrodes; an impedance measuring section which measures an impedance value by supplying high-frequency power to the living tissue; a grasping condition determining section which determines, based on the measured impedance value, a grasping condition regarding how the living tissue is grasped in blood by the electrodes; and a control section which controls high-frequency power supply at a predetermined power level needed to treat the patent foramen ovale, according to a result of the determination.
摘要翻译：用于治疗心脏卵孔的高频手术PFO封闭装置包括：掌握卵圆孔卵泡的活组织的第一和第二电极; 高频电源部，其经由所述电极向所述生物体组织供给高频电力; 阻抗测量部，其通过向所述生物体组织提供高频电力来测量阻抗值; 抓取条件确定部，其基于所测量的阻抗值，确定关于如何通过所述电极将活体组织夹在血液中的抓取条件; 以及控制部，其根据所述判定的结果，以预定的功率水平来控制治疗所述卵泡孔的所述专利的高频电源。

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