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1. 发明授权

US08547429B2 Apparatus and method for monitoring semiconductor device manufacturing process 有权
标题翻译：用于监测半导体器件制造工艺的装置和方法
公开(公告)号：US08547429B2
公开(公告)日：2013-10-01
申请号：US12379645
申请日：2009-02-26
申请人： Toshifumi Honda , Yuuji Takagi
发明人： Toshifumi Honda , Yuuji Takagi
IPC分类号： H04N5/253 , G06K9/00
CPC分类号： G06T7/0006 , G06T2207/10061 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.
摘要翻译：热点搜索装置分别在不同的制造工艺条件下制造半导体晶片上的少量芯片或区域，比较其外观的SEM图像以输出具有较大差异的点作为窄工艺窗口，即处理监视点应在大规模生产中进行管理，在半导体晶片的制造中具有窄制造工艺条件（曝光条件）的窄工艺窗口，并且通过CD-SEM装置将点设定为测量点，使得其提取和在短时间内确定具有窄制造工艺余量的多个电路图形部分作为处理监视点，并且处理监视点监视以高分辨率详细地进行形状检查或形状长度测量。

2. 发明申请

US20090231424A1 System and method for monitoring semiconductor device manufacturing process 有权
标题翻译：半导体器件制造工艺监控系统及方法
公开(公告)号：US20090231424A1
公开(公告)日：2009-09-17
申请号：US12379645
申请日：2009-02-26
申请人： Toshifumi Honda , Yuuji Takagi
发明人： Toshifumi Honda , Yuuji Takagi
IPC分类号： H04N7/18
CPC分类号： G06T7/0006 , G06T2207/10061 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.
摘要翻译：热点搜索装置分别在不同的制造工艺条件下制造半导体晶片上的少量芯片或区域，比较其外观的SEM图像以输出具有较大差异的点作为窄工艺窗口，即处理监视点应在大规模生产中进行管理，在半导体晶片的制造中具有窄制造工艺条件（曝光条件）的窄工艺窗口，并且通过CD-SEM装置将点设定为测量点，使得其提取和在短时间内确定具有窄制造工艺余量的多个电路图形部分作为处理监视点，并且处理监视点监视以高分辨率详细地进行形状检查或形状长度测量。

3. 发明申请

US20060289752A1 Observing method and its apparatus using electron microscope 有权
公开(公告)号：US20060289752A1
公开(公告)日：2006-12-28
申请号：US11415286
申请日：2006-05-02
申请人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
发明人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J2237/2817
摘要： The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.

4. 发明授权

US07598491B2 Observing method and its apparatus using electron microscope 有权
标题翻译：观察方法及其装置采用电子显微镜
公开(公告)号：US07598491B2
公开(公告)日：2009-10-06
申请号：US11415286
申请日：2006-05-02
申请人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
发明人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
IPC分类号： G21K7/00 , G01N23/225
CPC分类号： H01J37/28 , H01J2237/2817
摘要： The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.
摘要翻译：本发明涉及在使用扫描电子显微镜的观察中对垂直观察图像和倾斜观察图像进行高速采集。电子束观察装置包括：第一电光学系统，其从基本垂直的方向扫描会聚的电子束到要观察的目标晶片上的缺陷，并通过检测二次电子获取垂直观察的缺陷图像信号图像或从缺陷产生的反射电子图像; 以及第二电光学系统，其从倾斜方向扫描会聚的电子束到缺陷，并且通过检测从缺陷产生的二次电子图像或反射的电子图像来获取具有倾斜观察的缺陷图像信号。

5. 发明授权

US09109194B2 Device for harvesting bacterial colony and method therefor 有权
标题翻译：收获细菌菌落的装置及其方法
公开(公告)号：US09109194B2
公开(公告)日：2015-08-18
申请号：US13505803
申请日：2010-11-05
申请人： Toshifumi Honda , Hiroko Fujita , Muneo Maeshima , Akira Maekawa , Yoshiko Ishida , Yuta Urano , Shinya Murakami
发明人： Toshifumi Honda , Hiroko Fujita , Muneo Maeshima , Akira Maekawa , Yoshiko Ishida , Yuta Urano , Shinya Murakami
IPC分类号： G06K9/00 , C12M1/26
CPC分类号： C12M33/00 , C12M41/36
摘要： When multiple kinds of bacterial colonies are present in a petri dish and, for example, a drug tolerance is to be measured, harvesting of mixed colonies of different types of bacteria makes it impossible to accurately determine the drug tolerance. Also, it is required to improve the throughput of a device for harvesting a bacterial colony. From images illuminated from multiple directions, isolating bacterial colonies are automatically extracted. Next, the image feature amounts are calculated from the multiple images that are illuminated from multiple directions and colonies are grouped depending on the feature amounts. Then, bacterial colonies to be harvested are determined based on the results of the grouping.
摘要翻译：当培养皿中存在多种细菌菌落时，例如测定药物耐受性时，收集不同类型细菌的混合菌落使得不可能准确地确定药物耐受性。此外，需要提高用于收获细菌菌落的装置的产量。从多个方向照射的图像，分离细菌菌落被自动提取。接下来，根据从多个方向照明的多个图像计算图像特征量，并且根据特征量对殖民地进行分组。然后，基于分组的结果确定要收获的细菌菌落。

6. 发明授权

US08804112B2 Method of defect inspection and device of defect inspection 有权
标题翻译：缺陷检查方法和缺陷检查装置
公开(公告)号：US08804112B2
公开(公告)日：2014-08-12
申请号：US13265935
申请日：2010-04-22
申请人： Yukihiro Shibata , Toshihiko Nakata , Taketo Ueno , Atsushi Taniguchi , Toshifumi Honda
发明人： Yukihiro Shibata , Toshihiko Nakata , Taketo Ueno , Atsushi Taniguchi , Toshifumi Honda
IPC分类号： G01N21/00
CPC分类号： G01N21/95623 , G01N21/95607 , G01N2021/8822 , G01N2201/062 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of inspecting defects and a device inspecting defects of detecting defects at high sensitivity and high capture efficiency even on various patterns existing on a wafer. In the device of inspecting defects, an illumination optical system is formed of two systems of a coherent illumination of a laser 5 and an incoherent illumination of LEDs 6a, 6b, 6c and 6d, and light paths are divided in a detecting system corresponding to respective illumination light, spatial modulation elements 55a and 55b are arranged to detecting light paths, respectively, scattered light inhibiting sensitivity is shielded by the spatial modulating elements 55a and 55b, scattered light transmitted through the spatial modulation elements 55a and 55b is detected by image sensors 90a and 90b arranged to respective light paths, and images detected by these two image sensors 90a and 90b are subjected to a comparison processing, thereby determining a defect candidate.
摘要翻译：一种检测缺陷的方法，以及即使在晶片上存在的各种图案，也可以检测高灵敏度和高捕获效率的缺陷检测缺陷。在检查缺陷的装置中，照明光学系统由激光器5的相干照明和LED 6a，6b，6c和6d的非相干照明的两个系统形成，并且光路被分成对应于相应的照明光，空间调制元件55a和55b分别被布置成检测光路，散射光抑制灵敏度被空间调制元件55a和55b屏蔽，传播通过空间调制元件55a和55b的散射光被图像传感器90a检测和90b，并且由这两个图像传感器90a和90b检测到的图像进行比较处理，从而确定缺陷候选。

7. 发明申请

US20130321798A1 DEFECT INSPECTION METHOD, LOW LIGHT DETECTING METHOD AND LOW LIGHT DETECTOR 有权
标题翻译：缺陷检测方法，低光检测方法和低光检测器
公开(公告)号：US20130321798A1
公开(公告)日：2013-12-05
申请号：US13882542
申请日：2011-10-14
申请人： Yuta Urano , Toshifumi Honda , Takahiro Jingu
发明人： Yuta Urano , Toshifumi Honda , Takahiro Jingu
IPC分类号： G01N21/88
CPC分类号： G01N21/8806 , G01N21/4795 , G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8835
摘要： A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.
摘要翻译：缺陷检查方法包括调整从光源发出的光的照明光调节步骤，将在所述照明光调节步骤中获得的光束形成为期望的照度分布的照度分布控制步骤，将样品置换的样本扫描步骤在与照明强度分布的长度方向大致正交的方向上，对从照明光照射的区域的多个小区域发射的散射光的光数进行计数，生成与多个散射光检测信号对应的散射光检测信号的散射光检测步骤多个小区域，处理多个散射光检测信号以判断缺陷的存在的缺陷判断步骤，判断存在缺陷的每个位置的缺陷的尺寸的缺陷维度判断步骤和显示显示位置的步骤o n样品表面和缺陷的每个位置的缺陷的尺寸。

8. 发明申请

US20130293880A1 DEFECT TESTING METHOD AND DEVICE FOR DEFECT TESTING 审中-公开
标题翻译：缺陷测试方法和缺陷测试装置
公开(公告)号：US20130293880A1
公开(公告)日：2013-11-07
申请号：US13882547
申请日：2011-11-01
申请人： Toshifumi Honda , Yuta Urano , Yukihiro Shibata
发明人： Toshifumi Honda , Yuta Urano , Yukihiro Shibata
IPC分类号： G01N21/95
CPC分类号： G01N21/9501
摘要： In a defect inspection method and an apparatus of the same, for enabling to conduct an inspection of fine defects without applying thermal damages on a sample, the following steps are conducted: mounting a sample on a rotatable table to rotate; irradiating a pulse laser emitting from a laser light source upon the sample rotating; detecting a reflected light from the sample, upon which the pulse laser is irradiated; detecting the reflected light from the sample detected; and detecting a defect on the sample through processing of a signal obtained through the detection, wherein irradiation of the pulse laser emitting from the laser light source upon the sample rotating is conducted by dividing the one pulse emitted from the laser light source into plural numbers of pulses, and irradiating each of the divided pulse lasers upon each of separate positions on the sample, respectively.
摘要翻译：在缺陷检查方法及其装置中，为了能够在对样品施加热损伤的情况下进行细小缺陷的检查，进行以下步骤：将样品安装在旋转台上旋转; 照射从激光光源发射的脉冲激光器对样品旋转; 检测来自所述脉冲激光器的样品的反射光; 检测检测到的样品的反射光; 并且通过处理通过检测获得的信号来检测样本上的缺陷，其中通过将从激光光源发射的一个脉冲除以多个数量来进行从样品旋转时从激光源发射的脉冲激光的照射脉冲，并且分别在样品上的每个分离位置上照射每个分割的脉冲激光器。

9. 发明申请

US20130119250A1 DEFECT INSPECTION METHOD, AND DEVICE THEREOF 有权
标题翻译：缺陷检查方法及其设备
公开(公告)号：US20130119250A1
公开(公告)日：2013-05-16
申请号：US13697025
申请日：2011-04-05
申请人： Naoki Hosoya , Toshifumi Honda , Takashi Hiroi
发明人： Naoki Hosoya , Toshifumi Honda , Takashi Hiroi
IPC分类号： H01J37/28 , H01J37/22
CPC分类号： H01J37/28 , G06T7/001 , G06T7/136 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01L22/12
摘要： A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
摘要翻译：将待检查的图像与参考图像进行比较并将得到的差分值与使用缺陷确定的阈值进行缺陷检测相对照的常规图案检查在高灵敏度检查中是困难的。因为缺陷仅在特定的电路图形部分中发生，所以在常规图案检查中出现虚假报告，而不是基于位置。公开了一种缺陷检查方法及其装置，其通过事先获取GP图像，指定待检查地点和GUI上的GP图像的阈值图来进行图案检查，设置缺陷的识别参考，下一步获取要检查的图像，将所述识别参考应用于要检查的图像，以及使用所述识别参考来识别所述缺陷，由此实现高度敏感的检查。

10. 发明申请

US20110102573A1 Method and Apparatus For Reviewing Defects of Semiconductor Device 有权
标题翻译：检查半导体器件缺陷的方法和装置
公开(公告)号：US20110102573A1
公开(公告)日：2011-05-05
申请号：US12986475
申请日：2011-01-07
申请人： Masaki KURIHARA , Toshifumi Honda , Ryo Nakagaki
发明人： Masaki KURIHARA , Toshifumi Honda , Ryo Nakagaki
IPC分类号： H04N7/18 , G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
摘要翻译：提供了一种用于检查半导体器件缺陷的方法和装置，其涉及检测在低放大倍率下拍摄的SEM图像上的缺陷，并且以高倍放大倍数检查SEM图像上的缺陷，并且可以检查在短时间内可以提高缺陷检查的效率。在本发明中，用于检查半导体器件的缺陷的方法包括以下步骤：通过使用扫描电子显微镜以第一放大率获得由检测装置检测的半导体器件上的缺陷的图像，从而所述图像包括在第一放大处获得的缺陷，通过将包括在第一放大获得的缺陷的图像与由包含第一放大率的缺陷构成的图像进行比较的图像进行比较来检测缺陷，并且获取检测到的缺陷的图像在大于第一放大率的第二放大倍率下。

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