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1. 发明申请

US20060289752A1 Observing method and its apparatus using electron microscope 有权
公开(公告)号：US20060289752A1
公开(公告)日：2006-12-28
申请号：US11415286
申请日：2006-05-02
申请人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
发明人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J2237/2817
摘要： The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.

2. 发明授权

US07598491B2 Observing method and its apparatus using electron microscope 有权
标题翻译：观察方法及其装置采用电子显微镜
公开(公告)号：US07598491B2
公开(公告)日：2009-10-06
申请号：US11415286
申请日：2006-05-02
申请人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
发明人： Munenori Fukunishi , Toshifumi Honda , Yuuji Takagi
IPC分类号： G21K7/00 , G01N23/225
CPC分类号： H01J37/28 , H01J2237/2817
摘要： The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.
摘要翻译：本发明涉及在使用扫描电子显微镜的观察中对垂直观察图像和倾斜观察图像进行高速采集。电子束观察装置包括：第一电光学系统，其从基本垂直的方向扫描会聚的电子束到要观察的目标晶片上的缺陷，并通过检测二次电子获取垂直观察的缺陷图像信号图像或从缺陷产生的反射电子图像; 以及第二电光学系统，其从倾斜方向扫描会聚的电子束到缺陷，并且通过检测从缺陷产生的二次电子图像或反射的电子图像来获取具有倾斜观察的缺陷图像信号。

3. 发明授权

US07361896B2 Scanning electron microscope and a method for adjusting a focal point of an electron beam of said scanning electron microscope 有权
标题翻译：扫描电子显微镜和用于调整所述扫描电子显微镜的电子束焦点的方法
公开(公告)号：US07361896B2
公开(公告)日：2008-04-22
申请号：US11130121
申请日：2005-05-17
申请人： Toshifumi Honda , Munenori Fukunishi , Kenji Obara
发明人： Toshifumi Honda , Munenori Fukunishi , Kenji Obara
IPC分类号： G01N23/00
CPC分类号： H01J37/21 , H01J2237/216
摘要： In a scanning electron microscope, scanning region is set to be narrow, upon which focused electron beam is scanned, so that the focused electron beam can be irradiated at the almost same position by plural numbers of times, irrespective of movement of the stage or of moving of the stage during braking thereof, and upon that region to be scanned is irradiated the focused electron beam, by plural numbers of times, while changing the focal position, thereby forming an image thereof. From the image formed is calculated out a section, from which a focus-in position can be calculated out, and then the focus-in position is calculated out from that calculated section.
摘要翻译：在扫描电子显微镜中，扫描区域被设置为窄，扫描聚焦电子束，使得聚焦电子束可以几乎相同的位置被照射多次，而不管平台的移动或者是在改变焦点位置的同时，在聚焦电子束多次照射被扫描的区域的同时，在其制动期间移动舞台，从而形成其图像。从形成的图像中计算出可从其计算聚焦位置的部分，然后从该计算部分计算聚焦位置。

4. 发明申请

US20050258366A1 Scanning electron microscope and a method for adjusting a focal point of an electron beam of said scanning electron microscope 有权
标题翻译：扫描电子显微镜和用于调整所述扫描电子显微镜的电子束焦点的方法
公开(公告)号：US20050258366A1
公开(公告)日：2005-11-24
申请号：US11130121
申请日：2005-05-17
申请人： Toshifumi Honda , Munenori Fukunishi , Kenji Obara
发明人： Toshifumi Honda , Munenori Fukunishi , Kenji Obara
IPC分类号： H01J37/20 , G21K7/00 , H01J37/21
CPC分类号： H01J37/21 , H01J2237/216
摘要： In a scanning electron microscope, scanning region is set to be narrow, upon which focused electron beam is scanned, so that the focused electron beam can be irradiated at the almost same position by plural numbers of times, irrespective of movement of the stage or of moving of the stage during braking thereof, and upon that region to be scanned is irradiated the focused electron beam, by plural numbers of times, while changing the focal position, thereby forming an image thereof. From the image formed is calculated out a section, from which a focus-in position can be calculated out, and then the focus-in position is calculated out from that calculated section.
摘要翻译：在扫描电子显微镜中，扫描区域被设置为窄，扫描聚焦电子束，使得聚焦电子束可以几乎相同的位置被照射多次，而不管平台的移动或者是在改变焦点位置的同时，在聚焦电子束多次照射被扫描的区域的同时，在其制动期间移动舞台，从而形成其图像。从形成的图像中计算出可从其计算聚焦位置的部分，然后从该计算部分计算聚焦位置。

5. 发明申请

US20060210144A1 Method and apparatus for reviewing defects 审中-公开
标题翻译：检查缺陷的方法和装置
公开(公告)号：US20060210144A1
公开(公告)日：2006-09-21
申请号：US11325552
申请日：2006-01-05
申请人： Kazuo Yamaguchi , Toshifumi Honda , Yuji Takagi , Munenori Fukunishi
发明人： Kazuo Yamaguchi , Toshifumi Honda , Yuji Takagi , Munenori Fukunishi
IPC分类号： G06K9/00
CPC分类号： G06T7/0006 , G06T2207/10061 , G06T2207/30148
摘要： A reviewing apparatus, for enabling to conduct detailed review (ADR) and/or defect classification (ADC), effectively, through making alignment of defects detected in an upstream inspecting apparatus into the reviewing apparatus, with certainty and at high accuracy, and further within a short time-period, comprises a defect selecting portion 240 for selecting or picking up a plural number of alignment candidates from a large numbers defects, upon defect inspection information, which is detected within the inspecting apparatus, an electron microscope 21 (30) for obtaining a SEM image of the plural number of alignment candidates, through picking up an image on each of the plural number of alignment candidates, which are selected or picked up, narrowly, and a determining portion 243 for calculating out characteristic quantities relating to the plural number of alignment candidates, upon basis of the obtained SEM images thereof, and for determining on suitableness/unsuitableness for use in alignment relating to the plural number of alignment candidates, upon basis of the characteristic quantities calculated therewith.
摘要翻译：一种审查装置，能够有效地进行详细审查（ADR）和/或缺陷分类（ADC），通过将上游检测装置中检测到的缺陷与确定性和准确性进行对准，并进一步在短时间段包括用于从大量缺陷中选择或拾取多个对准候选的缺陷选择部分240，在检查装置内检测到的缺陷检查信息时，具有电子显微镜21（30），用于通过拾取选择或拾取的多个对准候选者中的每一个上的图像，以及用于计算与多个对准候选者相关的特征量的确定部分243，获得多个对准候选的SEM图像; 基于所获得的SEM图像和用于确定适合性/不适合性的对准候选数基于由其计算的特征量，与多个对准候选对齐。

6. 发明授权

US08547429B2 Apparatus and method for monitoring semiconductor device manufacturing process 有权
标题翻译：用于监测半导体器件制造工艺的装置和方法
公开(公告)号：US08547429B2
公开(公告)日：2013-10-01
申请号：US12379645
申请日：2009-02-26
申请人： Toshifumi Honda , Yuuji Takagi
发明人： Toshifumi Honda , Yuuji Takagi
IPC分类号： H04N5/253 , G06K9/00
CPC分类号： G06T7/0006 , G06T2207/10061 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.
摘要翻译：热点搜索装置分别在不同的制造工艺条件下制造半导体晶片上的少量芯片或区域，比较其外观的SEM图像以输出具有较大差异的点作为窄工艺窗口，即处理监视点应在大规模生产中进行管理，在半导体晶片的制造中具有窄制造工艺条件（曝光条件）的窄工艺窗口，并且通过CD-SEM装置将点设定为测量点，使得其提取和在短时间内确定具有窄制造工艺余量的多个电路图形部分作为处理监视点，并且处理监视点监视以高分辨率详细地进行形状检查或形状长度测量。

7. 发明申请

US20090231424A1 System and method for monitoring semiconductor device manufacturing process 有权
标题翻译：半导体器件制造工艺监控系统及方法
公开(公告)号：US20090231424A1
公开(公告)日：2009-09-17
申请号：US12379645
申请日：2009-02-26
申请人： Toshifumi Honda , Yuuji Takagi
发明人： Toshifumi Honda , Yuuji Takagi
IPC分类号： H04N7/18
CPC分类号： G06T7/0006 , G06T2207/10061 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.
摘要翻译：热点搜索装置分别在不同的制造工艺条件下制造半导体晶片上的少量芯片或区域，比较其外观的SEM图像以输出具有较大差异的点作为窄工艺窗口，即处理监视点应在大规模生产中进行管理，在半导体晶片的制造中具有窄制造工艺条件（曝光条件）的窄工艺窗口，并且通过CD-SEM装置将点设定为测量点，使得其提取和在短时间内确定具有窄制造工艺余量的多个电路图形部分作为处理监视点，并且处理监视点监视以高分辨率详细地进行形状检查或形状长度测量。

8. 发明授权

US09109194B2 Device for harvesting bacterial colony and method therefor 有权
标题翻译：收获细菌菌落的装置及其方法
公开(公告)号：US09109194B2
公开(公告)日：2015-08-18
申请号：US13505803
申请日：2010-11-05
申请人： Toshifumi Honda , Hiroko Fujita , Muneo Maeshima , Akira Maekawa , Yoshiko Ishida , Yuta Urano , Shinya Murakami
发明人： Toshifumi Honda , Hiroko Fujita , Muneo Maeshima , Akira Maekawa , Yoshiko Ishida , Yuta Urano , Shinya Murakami
IPC分类号： G06K9/00 , C12M1/26
CPC分类号： C12M33/00 , C12M41/36
摘要： When multiple kinds of bacterial colonies are present in a petri dish and, for example, a drug tolerance is to be measured, harvesting of mixed colonies of different types of bacteria makes it impossible to accurately determine the drug tolerance. Also, it is required to improve the throughput of a device for harvesting a bacterial colony. From images illuminated from multiple directions, isolating bacterial colonies are automatically extracted. Next, the image feature amounts are calculated from the multiple images that are illuminated from multiple directions and colonies are grouped depending on the feature amounts. Then, bacterial colonies to be harvested are determined based on the results of the grouping.
摘要翻译：当培养皿中存在多种细菌菌落时，例如测定药物耐受性时，收集不同类型细菌的混合菌落使得不可能准确地确定药物耐受性。此外，需要提高用于收获细菌菌落的装置的产量。从多个方向照射的图像，分离细菌菌落被自动提取。接下来，根据从多个方向照明的多个图像计算图像特征量，并且根据特征量对殖民地进行分组。然后，基于分组的结果确定要收获的细菌菌落。

9. 发明授权

US08804112B2 Method of defect inspection and device of defect inspection 有权
标题翻译：缺陷检查方法和缺陷检查装置
公开(公告)号：US08804112B2
公开(公告)日：2014-08-12
申请号：US13265935
申请日：2010-04-22
申请人： Yukihiro Shibata , Toshihiko Nakata , Taketo Ueno , Atsushi Taniguchi , Toshifumi Honda
发明人： Yukihiro Shibata , Toshihiko Nakata , Taketo Ueno , Atsushi Taniguchi , Toshifumi Honda
IPC分类号： G01N21/00
CPC分类号： G01N21/95623 , G01N21/95607 , G01N2021/8822 , G01N2201/062 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of inspecting defects and a device inspecting defects of detecting defects at high sensitivity and high capture efficiency even on various patterns existing on a wafer. In the device of inspecting defects, an illumination optical system is formed of two systems of a coherent illumination of a laser 5 and an incoherent illumination of LEDs 6a, 6b, 6c and 6d, and light paths are divided in a detecting system corresponding to respective illumination light, spatial modulation elements 55a and 55b are arranged to detecting light paths, respectively, scattered light inhibiting sensitivity is shielded by the spatial modulating elements 55a and 55b, scattered light transmitted through the spatial modulation elements 55a and 55b is detected by image sensors 90a and 90b arranged to respective light paths, and images detected by these two image sensors 90a and 90b are subjected to a comparison processing, thereby determining a defect candidate.
摘要翻译：一种检测缺陷的方法，以及即使在晶片上存在的各种图案，也可以检测高灵敏度和高捕获效率的缺陷检测缺陷。在检查缺陷的装置中，照明光学系统由激光器5的相干照明和LED 6a，6b，6c和6d的非相干照明的两个系统形成，并且光路被分成对应于相应的照明光，空间调制元件55a和55b分别被布置成检测光路，散射光抑制灵敏度被空间调制元件55a和55b屏蔽，传播通过空间调制元件55a和55b的散射光被图像传感器90a检测和90b，并且由这两个图像传感器90a和90b检测到的图像进行比较处理，从而确定缺陷候选。

10. 发明申请

US20130321798A1 DEFECT INSPECTION METHOD, LOW LIGHT DETECTING METHOD AND LOW LIGHT DETECTOR 有权
标题翻译：缺陷检测方法，低光检测方法和低光检测器
公开(公告)号：US20130321798A1
公开(公告)日：2013-12-05
申请号：US13882542
申请日：2011-10-14
申请人： Yuta Urano , Toshifumi Honda , Takahiro Jingu
发明人： Yuta Urano , Toshifumi Honda , Takahiro Jingu
IPC分类号： G01N21/88
CPC分类号： G01N21/8806 , G01N21/4795 , G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8835
摘要： A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.
摘要翻译：缺陷检查方法包括调整从光源发出的光的照明光调节步骤，将在所述照明光调节步骤中获得的光束形成为期望的照度分布的照度分布控制步骤，将样品置换的样本扫描步骤在与照明强度分布的长度方向大致正交的方向上，对从照明光照射的区域的多个小区域发射的散射光的光数进行计数，生成与多个散射光检测信号对应的散射光检测信号的散射光检测步骤多个小区域，处理多个散射光检测信号以判断缺陷的存在的缺陷判断步骤，判断存在缺陷的每个位置的缺陷的尺寸的缺陷维度判断步骤和显示显示位置的步骤o n样品表面和缺陷的每个位置的缺陷的尺寸。

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