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1. 发明授权

US5238775A Radiation-sensitive resin composition 失效
标题翻译：辐射敏感性树脂组合物
公开(公告)号：US5238775A
公开(公告)日：1993-08-24
申请号：US656857
申请日：1991-02-19
申请人： Toru Kajita , Takao Miura , Yoshiji Yumoto , Chozo Okuda
发明人： Toru Kajita , Takao Miura , Yoshiji Yumoto , Chozo Okuda
IPC分类号： C07C39/15 , G03F7/022
CPC分类号： C07C39/15 , G03F7/0226
摘要： A radiation-sensitive resin composition containing an alkali-soluble resin, comprising a polyhydroxy compound having the following formula: ##STR1## or a quinonediazidesulfonate of the polyhydroxy compound. The radiation-sensitive resin composition is suitable for use as a positive type photoresist which has such excellent developability as to inhibit effectively the generation of scum in the formation of a photoresist pattern, has high sensitivity and is excellent in heat resistance and remained thickness ratio upon development.

2. 发明授权

US5413896A I-ray sensitive positive resist composition 失效
标题翻译： I-ray敏感抗蚀剂组成
公开(公告)号：US5413896A
公开(公告)日：1995-05-09
申请号：US821806
申请日：1992-01-17
申请人： Toru Kajita , Toshiyuki Ota , Yoshiji Yumoto , Takao Miura
发明人： Toru Kajita , Toshiyuki Ota , Yoshiji Yumoto , Takao Miura
IPC分类号： C08G8/24 , G03F7/022 , G03F7/023 , G03F7/30
CPC分类号： G03F7/0236 , C08G8/24 , G03F7/022
摘要： An i-ray sensitive positive resist composition: which (A) comprises an alkali-soluble novolak resin obtained by subjecting (a) a phenolic mixture of B to 95 mol % of 2,3-xylenol with 95 to 5 mol % of a phenol selected from mono-, di- and tri-methyl phenols other than 2,3-xylenol or (b) a phenolic mixture of 5 to 50 mol % of 8,4-xylenol with 95 to 50 mol % of a phenol selected from mono-, di- and tri-methyl phenols other than 3,4-xylenol to polycondensation together with an aldehyde, and a 1,2-quinonediazide compound, and (B) which has sensitivity to i-ray. There is also provided a method of forming a pattern, which comprises: (1) applying the i-ray sensitive positive resist composition to a wafer to form a photosensitive layer, (2) irradiating the photosensitive layer with i-ray through a predetermined pattern, and (3) developing the pattern with a developer.
摘要翻译：一种i射线敏感正性抗蚀剂组合物，其中（A）包含通过使（a）B至95mol％的2,3-二甲苯酚的酚类混合物与95至5mol％的苯酚（A）的碱溶性酚醛清漆树脂选自2,3-二甲苯酚以外的单 - ，二 - 和三 - 甲基苯酚或（b）5-50mol％的8,4-二甲苯酚的酚类混合物和95-50mol％的选自单 - - 除3,4-二异戊烯酚以外的二 - 和三 - 甲基苯酚与醛缩合，和1,2-醌二叠氮化合物，和（B）对i射线具有敏感性。还提供了形成图案的方法，其包括：（1）将i射线敏感正性抗蚀剂组合物施加到晶片以形成感光层，（2）通过预定图案以i射线照射感光层，（3）用开发者开发图案。

3. 发明授权

US5609988A Radiation sensitive resin composition 失效
标题翻译：辐射敏感树脂组合物
公开(公告)号：US5609988A
公开(公告)日：1997-03-11
申请号：US229746
申请日：1994-04-19
申请人： Hidetoshi Miyamoto , Shinji Shiraki , Yoshiji Yumoto , Takao Miura
发明人： Hidetoshi Miyamoto , Shinji Shiraki , Yoshiji Yumoto , Takao Miura
IPC分类号： G02B5/20 , G03F7/004 , G03F7/038 , H01L21/027 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045
摘要： A radiation sensitive resin composition useful as a negative type resist which can form a resist pattern having a good shape, has so high acid resistance as not to be affected by an etchant and a high adhesion to the substrate, and is endowed with so high a strippability as to be easily dissolved in a stripping solution consisting of an organoalkali. Said composition comprises (1) 100 parts by weight of an alkali-soluble novolak resin having a polystyrene reduced weight average molecular weight of 1,000 to 10,000, (2) 1 to 10 parts by weight of a compound having a methylol group and/or an alkoxymethyl group and being capable of cross-linking the alkali-soluble novolak resin (1) in the presence of an acid, and (3) 0.01 to 5 parts by weight of a radiation sensitive acid-generating agent represented by formula (I): ##STR1##
摘要翻译：作为能够形成具有良好形状的抗蚀剂图案的负型抗蚀剂的辐射敏感性树脂组合物具有如此高的耐酸性，不受蚀刻剂的影响和与基材的高粘合性，并且具有如此高的剥离性易于溶解在由有机碱组成的剥离溶液中。所述组合物包含（1）100重量份的聚苯乙烯换算的重均分子量为1,000至10,000的碱溶性酚醛清漆树脂，（2）1至10重量份的具有羟甲基和/或并且能够在酸存在下交联碱溶性酚醛清漆树脂（1），和（3）0.01至5重量份由式（I）表示的辐射敏感性酸产生剂：（一）

4. 发明授权

US5580695A Chemically amplified resist 失效
标题翻译：化学放大抗蚀剂
公开(公告)号：US5580695A
公开(公告)日：1996-12-03
申请号：US339289
申请日：1994-11-10
申请人： Makoto Murata , Takao Miura , Yoshiji Yumoto , Toshiyuki Ota , Eiichi Kobayashi
发明人： Makoto Murata , Takao Miura , Yoshiji Yumoto , Toshiyuki Ota , Eiichi Kobayashi
IPC分类号： G03F7/004 , G03C1/73 , G03F7/038
CPC分类号： G03F7/0045 , Y10S430/118 , Y10S430/121
摘要： A chemically amplified resist comprising an alkali-soluble resin or a resin having at least one acid-dissociable group which is alkali-insoluble or -sprairingly soluble but becomes alkali-soluble upon dissociation of said acid dissociable group due to an acid; a radiation-sensitive, acid-generating agent; and an optional component in which resist, the radiation-sensitive, acid-generating agent generates an acid upon irradiation with a radiation in the irradiated portion and the solubility of the resin component and optional component in a developing solution is varied in the irradiated portion by a chemical reaction caused by the catalytic action of the acid, whereby a pattern is formed, characterized in that a compound having a nitrogen-containing basic group is contained in the resist. Said resist is superior in developability, pattern form, resolution, focus tolerance and yield of residual film thickness, has good process stability, and can be suitably used even in irradiation with, in particular, a radiation having a wavelength equal to or smaller than far ultraviolet rays, for example, an excimer laser or the like.
摘要翻译：一种化学放大抗蚀剂，其包含碱溶性树脂或具有至少一种酸解离基团的树脂，所述酸解离基团是由于酸而导致的所述酸解离基团的解离时为碱不溶性或易溶性但是变得碱溶性的; 辐射敏感的酸产生剂; 以及任选的组分，其中抗辐射敏感的酸产生剂在照射部分中的辐射照射时产生酸，并且树脂组分和任选组分在显影溶液中的溶解度在照射部分中变化由酸的催化作用引起的化学反应，由此形成图案，其特征在于在抗蚀剂中含有具有含氮碱性基团的化合物。所述抗蚀剂的显影性，图案形式，分辨率，聚焦容限和残留膜厚度的产率优异，具有良好的工艺稳定性，并且可以适用于特别是具有等于或小于远的波长的辐射紫外线，例如准分子激光等。

5. 发明授权

US5494777A Radiation sensitive resin composition 失效
标题翻译：辐射敏感树脂组合物
公开(公告)号：US5494777A
公开(公告)日：1996-02-27
申请号：US229677
申请日：1994-04-19
申请人： Shinji Shiraki , Hidetoshi Miyamoto , Masaaki Inoue , Toshiyuki Ota , Yoshiji Yumoto , Takao Miura
发明人： Shinji Shiraki , Hidetoshi Miyamoto , Masaaki Inoue , Toshiyuki Ota , Yoshiji Yumoto , Takao Miura
IPC分类号： G03F7/004 , G03F7/038 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045
摘要： A radiation sensitive resin composition which can be suitably used as a negative type resist having a high sensitivity, a high resolution, a high yield of residual film thickness and high thermal resistance, and which comprises (A) an alkali-soluble novolak resin, (B) a phenolic compound having a standard polystyrene-reduced weight average molecular weight of 10,000 or less such as polyvinylphenol, (C) a compound capable of cross-linking the component (A) and/or the component (B) in the presence of an acid, and (D) a radiation sensitive acid generator such as a triazine compound having a halomethyl group.
摘要翻译：适合用作具有高灵敏度，高分辨率，高残留膜厚度和高耐热性的负型抗蚀剂的辐射敏感性树脂组合物，其包含（A）碱溶性酚醛清漆树脂（ B）具有标准聚苯乙烯换算的重均分子量为10,000以下的酚类化合物，例如聚乙烯基苯酚，（C）能够在（A）成分和/或（B）成分的存在下交联的化合物酸和（D）辐射敏感性酸产生剂，例如具有卤代甲基的三嗪化合物。

6. 发明授权

US5482816A Radiation-sensitive composition 失效
标题翻译：辐射敏感组合物
公开(公告)号：US5482816A
公开(公告)日：1996-01-09
申请号：US263421
申请日：1994-06-21
申请人： Makoto Murata , Mikio Yamachika , Yoshiji Yumoto , Takao Miura
发明人： Makoto Murata , Mikio Yamachika , Yoshiji Yumoto , Takao Miura
IPC分类号： G03F7/039 , G03F7/004 , G03C1/52 , G03F7/023
CPC分类号： G03F7/039 , Y10S430/111 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A radiation-sensitive composition comprising (A) a polymer having a recurring unit represented by formula (1): ##STR1## wherein R.sup.1 represents a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.2 represents --OR.sup.3 or --NR.sup.4 R.sup.5 in which R.sup.3 is a hydrogen atom, a straight-chain alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.4 and R.sup.5, which may be the same or different, are hydrogen atoms, straight-chain alkyl groups, cyclic alkyl groups, aralkyl groups or aryl groups, and (B) a radiation-sensitive acid forming agent. Said radiation-sensitive composition can be suitably used as a resist composition which enables reliable fine processing, which has high sensitivity and high resolution degree, and which is superior in dry etching resistance, develop-ability, adhesiveness, heat resistance and yield of residual film thickness.
摘要翻译：一种辐射敏感性组合物，其包含（A）具有由式（1）表示的重复单元的聚合物：其中R1表示取代的甲基，取代的乙基，甲硅烷基，甲锗烷基或烷氧基羰基，R 2表示-OR 3或-NR 4 R 5，其中R 3为氢原子，直链烷基，环烷基，芳基，芳烷基，取代甲基，取代乙基，甲硅烷基，甲锗烷基或烷氧基羰基，R 4和R 5可以相同或不同，为氢原子，直链烷基，环烷基，芳烷基或芳基，（B）辐射敏感性酸形成剂。所述辐射敏感性组合物可以适当地用作能够进行可靠的精细加工的抗蚀剂组合物，其具有高灵敏度和高分辨度，并且其耐干蚀刻性，显影性，粘合性，耐热性和残留膜的产率优异厚度。

7. 发明授权

US5410005A Reflection preventing film and process for forming resist pattern using the same 失效
标题翻译：防反射膜和使用其形成抗蚀剂图案的工艺
公开(公告)号：US5410005A
公开(公告)日：1995-04-25
申请号：US105622
申请日：1993-08-13
申请人： Hiroaki Nemoto , Takayoshi Tanabe , Yoshiji Yumoto , Takao Miura
发明人： Hiroaki Nemoto , Takayoshi Tanabe , Yoshiji Yumoto , Takao Miura
IPC分类号： G03F7/09 , C08F18/20
CPC分类号： G03F7/091
摘要： A reflection preventing film comprising a copolymer, its salt or both of them, the copolymer having at least one recurring unit selected from the group consisting of recurring units represented by formulas (1) and (2) and at least one recurring unit represented by formula (3): ##STR1## wherein R.sup.1 -R.sup.4 which may be the same as or different from one another, represent hydrogen atoms or organic groups and X represents a carboxyl group or a sulfo group, ##STR2## wherein R.sup.5 represents a hydrogen atom or an organic group, A represents a fluoroalkyl group and Y represents an alkylene group or a fluoroalkylene group. The reflection preventing film is formed on a resist film before irradiation in the formation of a resist pattern, thereby preventing the radiation reflected on the substrate from re-reflecting at the upper interface of the resist film to provide a resist pattern excellent in resolution, developability and pattern form.
摘要翻译：一种包含共聚物，其盐或两者的防反射膜，所述共聚物具有至少一个选自由式（1）和（2）表示的重复单元的重复单元和至少一个由式（3）：其中可以相同或不同的R 1 -R 4表示氢原子或有机基团，X表示羧基或磺基，（3）其中，R5表示氢原子或有机基团，A表示氟代烷基，Y表示亚烷基或氟代亚烷基。防反射膜在形成抗蚀剂图案的照射之前形成在抗蚀剂膜上，从而防止反射在基板上的辐射在抗蚀剂膜的上界面处再反射，从而提供分辨率，显影性优异的抗蚀剂图案和图案形式。

8. 发明授权

US5332650A Radiation-sensitive composition 失效
标题翻译：辐射敏感组合物
公开(公告)号：US5332650A
公开(公告)日：1994-07-26
申请号：US941264
申请日：1992-09-04
申请人： Makoto Murata , Mikio Yamachika , Yoshiji Yumoto , Takao Miura
发明人： Makoto Murata , Mikio Yamachika , Yoshiji Yumoto , Takao Miura
IPC分类号： G03F7/039 , G03F7/004 , G03C1/52 , G03F7/023
CPC分类号： G03F7/039 , Y10S430/111 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A radiation-sensitive composition comprising (A) a polymer having a recurring unit represented by formula (1): ##STR1## wherein R.sup.1 represents a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.2 represents --OR.sup.3 or --NR.sup.4 R.sup.5 in which R.sup.3 is a hydrogen atom, a straight-chain alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.4 and R.sup.5 which may be the same or different, are hydrogen atoms, straight-chain alkyl groups, cyclic alkyl groups, aralkyl groups or aryl groups, and (B) a radiation-sensitive acid forming agent. Said radiation-sensitive composition can be suitably used as a resist composition which enables reliable fine processing, which has high sensitivity and high resolution degree, and which is superior in dry etching resistance, developability, adhesiveness, heat resistance and yield of residual film thickness.
摘要翻译：一种辐射敏感性组合物，其包含（A）具有由式（1）表示的重复单元的聚合物：其中R1表示取代的甲基，取代的乙基，甲硅烷基，甲锗烷基或烷氧基羰基，R 2表示-OR 3或-NR 4 R 5，其中R 3为氢原子，直链烷基，环烷基，芳基，芳烷基，取代甲基，取代乙基，甲硅烷基，甲锗烷基或烷氧基羰基，R 4和R 5可以相同或不同，为氢原子，直链烷基，环烷基，芳烷基或芳基，（B）敏感的酸成型剂。所述辐射敏感性组合物可以适当地用作能够进行可靠的精细加工的抗蚀剂组合物，其具有高灵敏度和高分辨度，并且其耐干蚀刻性，显影性，粘合性，耐热性和残留膜厚度的产率优异。

9. 发明授权

US5525457A Reflection preventing film and process for forming resist pattern using the same 失效
标题翻译：防反射膜和使用其形成抗蚀剂图案的工艺
公开(公告)号：US5525457A
公开(公告)日：1996-06-11
申请号：US354847
申请日：1994-12-09
申请人： Hiroaki Nemoto , Masayuki Endo , Yoshiji Yumoto , Takao Miura
发明人： Hiroaki Nemoto , Masayuki Endo , Yoshiji Yumoto , Takao Miura
IPC分类号： G03F7/09 , G03F7/26
CPC分类号： G03F7/091
摘要： A reflection preventing film for forming a resist pattern and a process for forming the resist pattern using the film. The film comprises a copolymer was copolymerized of monomers which comprise at least one unsaturated carboxylic acid monomer, at least one epoxy group-containing unsaturated monomer, and at least one cinnamoylphenyl group-containing unsaturated monomer. The reflection preventing film exhibits a high halation preventing effect, involves no sublimation of radiation absorbing components contained therein, is free from occurrence of intermixing, possesses excellent heat resistance, exhibits a superb dry etching performance and storage stability, and produces resist patterns with excellent resolution and precision. The resist pattern forming process comprises forming the reflection preventing film on a substrate, forming a resist coating film on said reflection preventing film, irradiating the resist film with a radiation, and developing the resist coating film.
摘要翻译：用于形成抗蚀剂图案的防反射膜和使用该膜形成抗蚀剂图案的工艺。该膜包含共聚物，其包含至少一种不饱和羧酸单体，至少一种含环氧基的不饱和单体和至少一种含肉桂酰基苯基的不饱和单体的单体。防反射膜具有高的防晕效果，不包含其中包含的辐射吸收组分的升华，不会发生混合，具有优异的耐热性，表现出极好的干蚀刻性能和储存稳定性，并且产生具有优异分辨率的抗蚀剂图案和精度。抗蚀剂图形形成工艺包括在基板上形成反射防止膜，在所述反射防止膜上形成抗蚀剂涂膜，用辐射照射抗蚀剂膜，以及显影抗蚀剂涂膜。

10. 发明授权

US5110706A I-line radiation-sensitive alkali-soluble resin composition utilizing 1,2-quinone diazide compound and hydroxy-chalcone additive 失效
标题翻译：使用1,2-二硝基化合物和羟基喹啉添加剂的I-LINE辐射敏感性碱溶性树脂组合物
公开(公告)号：US5110706A
公开(公告)日：1992-05-05
申请号：US611762
申请日：1990-11-13
申请人： Yoshiji Yumoto , Tsutomu Shimokawa , Takao Miura
发明人： Yoshiji Yumoto , Tsutomu Shimokawa , Takao Miura
IPC分类号： G03F7/022 , H01L21/027
CPC分类号： G03F7/0226
摘要： A radiation-sensitive resin composition comprises (a) an alkali-soluble resin, (b) a 1,2-quinone diazide compound, and (c) an aromatic compound having a specified molecular structure, as essential constituents. The composition is extremely useful for forming a positive type photoresist on a substrate having a high reflectance.

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