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1. 发明申请

US20090284831A1 PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置的投影目标
公开(公告)号：US20090284831A1
公开(公告)日：2009-11-19
申请号：US12330980
申请日：2008-12-09
申请人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
发明人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
IPC分类号： G02B13/14 , G02B27/28 , G02B3/00
CPC分类号： G03F7/70341 , G02B5/3091 , G02B27/0025 , G03F7/70308
摘要： A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element (L3) with an index of refraction greater than 1.6. This element (L3) has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume (L3′) which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.
摘要翻译：微光刻投影曝光装置的投影物镜具有折射率大于1.6的高折射率折射光学元件（L3）。该元件（L3）具有在体积上变化的体积和材料相关的光学性质。该光学特性的变化导致物镜的像差。在一个实施例中，提供至少4个光学表面，其布置在与折射光学元件的体积光学共轭的至少一个体积（L3'）中。每个光学表面包括至少一个校正装置，例如具有局部变化特性的表面变形或双折射层，其至少部分地校正由光学性质的变化引起的像差。

2. 发明申请

US20080212060A1 Method for Determining Intensity Distribution in the Image Plane of a Projection Exposure Arrangement 有权
标题翻译：确定投影曝光安排图像平面中强度分布的方法
公开(公告)号：US20080212060A1
公开(公告)日：2008-09-04
申请号：US12065451
申请日：2006-09-02
申请人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
发明人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
IPC分类号： G03B27/54
CPC分类号： G03F7/70666 , G03F7/70308
摘要： A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.
摘要翻译：一种用于确定投影曝光装置的焦平面中的强度分布的方法，其中大面积成像系统被仿真并且来自样品的光由仿真成像系统在局部分辨率检测器上表示。还描述了用于执行该方法和仿真装置的装置。由于考虑到系统变迹，本发明使得可以提高再现质量。本发明的方法包括确定输出光瞳中的积分幅度分布，将积分幅度分布与预定的变迹校正相结合，并根据修改的幅度分布来计算校正的变迹图像。

3. 发明授权

US07239450B2 Method of determining lens materials for a projection exposure apparatus 有权
标题翻译：确定投影曝光装置的透镜材料的方法
公开(公告)号：US07239450B2
公开(公告)日：2007-07-03
申请号：US11181694
申请日：2005-07-14
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
IPC分类号： G02B3/00
CPC分类号： G03F7/70891 , G02B1/02 , G02B1/08 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子K LT / LH 。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子K LT / LH <>高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

4. 发明授权

US08854606B2 Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system 有权
标题翻译：投影曝光系统，借助于这种投影曝光系统和适于在这种系统中使用的偏振光学元件制造微结构结构构件的方法
公开(公告)号：US08854606B2
公开(公告)日：2014-10-07
申请号：US13161011
申请日：2011-06-15
申请人： Hans-Jürgen Mann , Wolfgang Singer , Toralf Gruner , Olaf Dittmann , Michael Totzeck
发明人： Hans-Jürgen Mann , Wolfgang Singer , Toralf Gruner , Olaf Dittmann , Michael Totzeck
IPC分类号： G03B27/72 , G03B27/54 , G03F7/20
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译：本发明涉及一种投影曝光系统，特别涉及微光刻技术。根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。至少一个偏振光学元件设置在光源和部件之间的光束路径上。

5. 发明申请

US20110242517A1 PROJECTION EXPOSURE SYSTEM, METHOD FOR MANUFACTURING A MICRO-STRUCTURED STRUCTURAL MEMBER BY THE AID OF SUCH A PROJECTION EXPOSURE SYSTEM AND POLARIZATION-OPTICAL ELEMENT ADAPTED FOR USE IN SUCH A SYSTEM 有权
标题翻译：投影曝光系统，通过这种投影曝光系统的辅助制造微结构结构构件的方法和适用于这种系统的偏光光学元件
公开(公告)号：US20110242517A1
公开(公告)日：2011-10-06
申请号：US13161011
申请日：2011-06-15
申请人： Hans-Jürgen Mann , Wolfgang Singer , Toralf Gruner , Olaf Dittmann , Michael Totzeck
发明人： Hans-Jürgen Mann , Wolfgang Singer , Toralf Gruner , Olaf Dittmann , Michael Totzeck
IPC分类号： G03B27/72 , G02B5/30
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译：本发明涉及一种投影曝光系统，特别涉及微光刻技术。根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。至少一个偏振光学元件设置在光源和部件之间的光束路径上。

6. 发明授权

US07961297B2 Method for determining intensity distribution in the image plane of a projection exposure arrangement 有权
标题翻译：用于确定投影曝光装置的图像平面中的强度分布的方法
公开(公告)号：US07961297B2
公开(公告)日：2011-06-14
申请号：US12065451
申请日：2006-09-02
申请人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
发明人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
IPC分类号： G03B27/72 , G03B27/32 , G03B27/68 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70666 , G03F7/70308
摘要： A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.
摘要翻译：一种用于确定投影曝光装置的焦平面中的强度分布的方法，其中大面积成像系统被仿真并且来自样品的光由仿真成像系统在局部分辨率检测器上表示。还描述了用于执行该方法和仿真装置的装置。由于考虑到系统变迹，本发明使得可以提高再现质量。本发明的方法包括确定输出光瞳中的积分幅度分布，将积分幅度分布与预定的变迹校正相结合，并根据修改的振幅分布计算校正的变迹图像。

7. 发明授权

US07808615B2 Projection exposure apparatus and method for operating the same 有权
标题翻译：投影曝光装置及其操作方法
公开(公告)号：US07808615B2
公开(公告)日：2010-10-05
申请号：US11427183
申请日：2006-06-28
申请人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Dittmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
发明人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Dittmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
IPC分类号： G03B27/54 , G03B27/32
CPC分类号： G03F7/70958 , G02B13/143 , G02B17/0856 , G02B17/0892 , G02B27/0012 , G03F7/70091
摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).
摘要翻译：本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。

8. 发明授权

US07321465B2 Method of optimizing an objective with fluoride crystal lenses, and objective with fluoride crystal lenses 失效
标题翻译：氟化物晶体透镜优化目标的方法，以及氟化物晶体透镜的目标
公开(公告)号：US07321465B2
公开(公告)日：2008-01-22
申请号：US11071699
申请日：2005-03-02
申请人： Michael Totzeck , Vladimir Kamenov , Toralf Gruner
发明人： Michael Totzeck , Vladimir Kamenov , Toralf Gruner
IPC分类号： G02B27/28
CPC分类号： G02B1/08 , G02B1/02 , G02B5/3083 , G02B13/143 , G03F7/70241 , G03F7/705 , G03F7/70966 , Y10S359/90
摘要： A numerical optimizing method serves to reduce harmful effects caused by intrinsic birefringence in lenses of a fluoride crystal material of cubic crystal structure in an objective, particularly a projection objective for a microlithography system. Under the optimizing method, an optimizing function which takes at least one birefringence-related image aberration into account is minimized. The birefringence-related image aberration is determined from a calculation for a light ray passing through the fluoride crystal lenses. To the extent that the birefringence-related image aberration is a function of parameters of the light ray, it depends only on geometric parameters of the light ray. The numerical optimizing method is used to produce objectives in which an optical retardation as well as an asymmetry of the optical retardation are corrected. The lenses are arranged in homogeneous groups, where each homogeneous group is corrected for the optical retardation asymmetry.
摘要翻译：数值优化方法用于减少物镜中的立方晶体结构的氟化物晶体材料的透镜中的固有双折射引起的有害影响，特别是微光刻系统的投影物镜。在优化方法下，考虑到至少一个双折射相关图像像差的优化函数被最小化。从通过氟化物晶体透镜的光线的计算确定双折射相关图像像差。在双折射相关图像像差是光线参数的函数的程度上，其仅取决于光线的几何参数。使用数值优化方法来产生其中光学延迟以及光学延迟的不对称性被校正的目标。透镜被排列成均匀的组，其中每个均匀组被校正用于光学延迟不对称。

9. 发明申请

US20080002167A1 PROJECTION EXPOSURE APPARATUS AND METHOD FOR OPERATING THE SAME 有权
标题翻译：投影曝光装置及其操作方法
公开(公告)号：US20080002167A1
公开(公告)日：2008-01-03
申请号：US11427183
申请日：2006-06-28
申请人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Hmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
发明人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Hmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
IPC分类号： G03B27/42 , G02B9/00
CPC分类号： G03F7/70958 , G02B13/143 , G02B17/0856 , G02B17/0892 , G02B27/0012 , G03F7/70091
摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).
摘要翻译：本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。

10. 发明申请

US20050152046A1 Optical system, in particular illumination system, of a microlithographic projection exposure apparatus 有权
标题翻译：光学系统，特别是照明系统，微光刻投影曝光装置
公开(公告)号：US20050152046A1
公开(公告)日：2005-07-14
申请号：US11014199
申请日：2004-12-16
申请人： Toralf Gruner , Michael Totzeck , Damian Fiolka , Wilhelm Ulrich , Gerhard Fuerter
发明人： Toralf Gruner , Michael Totzeck , Damian Fiolka , Wilhelm Ulrich , Gerhard Fuerter
IPC分类号： G02B27/00 , G02B27/28 , G03F7/20 , G02B17/00
CPC分类号： G03F7/70191 , G02B5/04 , G02B5/3066 , G02B27/286 , G03F7/70566
摘要： An optical system, particularly an illumination system, of a microlithographic projection exposure apparatus contains at least one plane reflecting surface for folding the beam path. The at least one reflecting surface is arranged with respect to an optical axis of the optical system such that the intensity ratio between two mutually perpendicular polarization directions is at least substantially preserved for an axially parallel light ray deviated by the at least one reflecting surface. In accordance with a second aspect, the at least one reflecting surface is arranged such that a maximum effect on the polarization of the projection light is achieved, so as to be able to compensate for polarization dependencies which occur in other components of the illumination system.
摘要翻译：微光刻投影曝光装置的光学系统，特别是照明系统包含用于折叠光束路径的至少一个平面反射表面。所述至少一个反射表面相对于所述光学系统的光轴布置，使得对于由所述至少一个反射表面偏离的轴向平行的光线，至少基本上保留了两个相互垂直的偏振方向之间的强度比。根据第二方面，至少一个反射表面被布置成使得能够实现对投射光的极化的最大影响，以便能够补偿在照明系统的其它部件中发生的偏振依赖性。

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