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1. 发明授权

US5786744A Hybrid sensor 失效
标题翻译：混合传感器
公开(公告)号：US5786744A
公开(公告)日：1998-07-28
申请号：US409197
申请日：1995-03-23
申请人： Tomoyuki Nishio , Satoshi Hiyama , Mizuho Doi , Nobuhiro Fueki , Hiroshi Yamakawa
发明人： Tomoyuki Nishio , Satoshi Hiyama , Mizuho Doi , Nobuhiro Fueki , Hiroshi Yamakawa
IPC分类号： G01C19/00 , G01P15/00 , G01P15/08 , G01P15/12 , G01P15/18 , H01C7/00
CPC分类号： G01P15/08 , G01P15/008 , G01P15/12 , G01P15/18 , G01P9/00
摘要： A hybrid sensor which is comprised of an acceleration sensor for detecting acceleration based on a temperature distribution of a predetermined gas hermetically enclosed within a fluid-tight space, and an angular velocity sensor for detecting angular velocity based on a deviation of a flow of a predetermined gas. The acceleration sensor and the angular velocity sensor are formed in one piece by the use of semiconductor processing technology in such a manner that the acceleration sensor and the angular velocity sensor are formed on a plurality of semiconductor substrates, and then the plurality of semiconductor substrates are superposed one upon another and united into a laminate.
摘要翻译：一种混合式传感器，包括：加速度传感器，用于根据气密地封闭在流体密封空间内的预定气体的温度分布来检测加速度;以及角速度传感器，用于根据预定的加油站。通过利用半导体处理技术将加速度传感器和角速度传感器形成为一体，使加速度传感器和角速度传感器形成在多个半导体基板上，然后将多个半导体基板叠加在一起并组合成层压板。

2. 发明授权

US5719333A Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US5719333A
公开(公告)日：1998-02-17
申请号：US376155
申请日：1995-01-20
申请人： Takashi Hosoi , Satoshi Hiyama , Sukeyuju Shinotuka , Mizuho Doi , Hiroshi Yamakawa , Nariaki Kuriyama , Tomoyuki Nishio , Atsushi Inaba , Nobuhiro Fueki
发明人： Takashi Hosoi , Satoshi Hiyama , Sukeyuju Shinotuka , Mizuho Doi , Hiroshi Yamakawa , Nariaki Kuriyama , Tomoyuki Nishio , Atsushi Inaba , Nobuhiro Fueki
IPC分类号： G01P15/00 , G01P15/12 , G01P15/18
CPC分类号： G01P15/18 , G01P15/008 , G01P15/12
摘要： A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.
摘要翻译：一种非常小且经济的加速度传感器，其可以通过在半导体制造过程中通过使用照相雕刻技术精确地处理半导体衬底等来以高灵敏度和高精度检测作用加速度，以精确地形成元件本身，例如传感器外壳，空腔，加热器，温度感测电阻元件和热型温度感测电阻元件，以及每个元件的相对位置。加速度传感器的一个实施例可以检测从任何三维方向起作用的加速度。

3. 发明授权

US5945601A Acceleration sensor with temperature resistor elements 失效
标题翻译：带温度电阻元件的加速度传感器
公开(公告)号：US5945601A
公开(公告)日：1999-08-31
申请号：US20999
申请日：1998-02-09
申请人： Takashi Hosoi , Satoshi Hiyama , Sukeyuju Shinotuka , Mizuho Doi , Hiroshi Yamakawa , Nariaki Kuriyama , Tomoyuki Nishio , Atsushi Inaba , Nobuhiro Fueki
发明人： Takashi Hosoi , Satoshi Hiyama , Sukeyuju Shinotuka , Mizuho Doi , Hiroshi Yamakawa , Nariaki Kuriyama , Tomoyuki Nishio , Atsushi Inaba , Nobuhiro Fueki
IPC分类号： G01P15/00 , G01P15/12 , G01P15/18
CPC分类号： G01P15/18 , G01P15/008 , G01P15/12
摘要： A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.
摘要翻译：一种非常小且经济的加速度传感器，其可以通过在半导体制造过程中通过使用照相雕刻技术精确地处理半导体衬底等来以高灵敏度和高精度检测作用加速度，以精确地形成元件本身，例如传感器外壳，空腔，加热器，温度感测电阻元件和热型温度感测电阻元件，以及每个元件的相对位置。加速度传感器的一个实施例可以检测从任何三维方向起作用的加速度。

4. 发明授权

US5553497A Gas flow type angular velocity sensor 失效
标题翻译：气流式角速度传感器
公开(公告)号：US5553497A
公开(公告)日：1996-09-10
申请号：US390875
申请日：1995-02-17
申请人： Mizuho Doi , Tomoyuki Nishio , Nobuhiro Fueki
发明人： Mizuho Doi , Tomoyuki Nishio , Nobuhiro Fueki
IPC分类号： B81B3/00 , G01C19/00 , G01P1/00 , G01P9/00
CPC分类号： G01P9/00 , G01P1/006
摘要： A gas flow type angular velocity sensor which is capable of reliably sensing an angular velocity while accurately controlling the working gas flow with temperature compensation by using a pair of heat wires as a gas flow sensor without providing any additional gas flow sensor in the sensor body wherein an angular velocity sensing bridge circuit is provided at its current supply source with a temperature compensating circuit connected in series which temperature compensating circuit is composed of a pair of series or parallel connected resistance elements, one of which is a thermosensitive resistance element disposed in a gas path and the other of which is a reference resistance element disposed outside the gas path.
摘要翻译：一种气流式角速度传感器，其能够可靠地感测角速度，同时通过使用一对热线作为气体流量传感器，同时通过温度补偿准确地控制工作气体流量，而不在传感器体中提供任何额外的气体流量传感器，在其电流源处提供角速度感测桥电路，其中温度补偿电路串联连接，温度补偿电路由一对串联或并联的电阻元件组成，其中之一是设置在气体中的热敏电阻元件路径，另一个是设置在气体通道外部的参考电阻元件。

5. 发明授权

US5438871A Gas flow type angular velocity sensor and method of constructing same 失效
标题翻译：气流式角速度传感器及其构造方法
公开(公告)号：US5438871A
公开(公告)日：1995-08-08
申请号：US889817
申请日：1992-05-29
申请人： Takashi Hosoi , Mizuho Doi , Tomoyuki Nishio , Satoshi Hiyama
发明人： Takashi Hosoi , Mizuho Doi , Tomoyuki Nishio , Satoshi Hiyama
IPC分类号： G01C19/00 , G01P9/00
CPC分类号： G01P9/00 , Y10T29/49007
摘要： A gas flow type angular velocity sensor comprising two semiconductor substrates wherein only the first semiconductor substrate is provided with a groove etched thereon constituting the gas path and the second semiconductor substrate is provided with paired heat wires formed thereon. The two semiconductor substrates are coupled and bonded to each other to form the sensor body.
摘要翻译：一种气流式角速度传感器，其包括两个半导体衬底，其中只有第一半导体衬底设置有构成气体路径的蚀刻在其上的沟槽，而第二半导体衬底上形成有一对热丝。两个半导体衬底彼此结合并结合以形成传感器体。

6. 发明授权

US5279162A Semiconductor sensor 失效
标题翻译：半导体传感器
公开(公告)号：US5279162A
公开(公告)日：1994-01-18
申请号：US848693
申请日：1992-03-09
申请人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
发明人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
IPC分类号： G01P15/08 , G01P15/12 , G01L9/00 , H01L29/84
CPC分类号： G01P15/123 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L2224/48091 , H01L2924/12032 , H01L2924/13091 , Y10S73/04
摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.
摘要翻译：本发明涉及用于检测诸如加速度，接触压力，空气压力，机械振动等外部物理力的半导体传感器。根据本发明的半导体传感器的特征在于使用高压电性的化合物半导体，例如GaAs 等等。常规地，悬臂式，隔膜式等的传感器由硅制成。这些现有技术的传感器具有低检测灵敏度，并且它们的特性趋于恶化。根据本发明的传感器由GaAs制成，其具有高压电性，并且即使在高温下也能保持半导体的良好特性，并且包括形成在GaAs上用于感测应力的场效应晶体管。 FET由恒定电流或恒定电压驱动，以便检测由于应力引起的电特性（例如，阈值特性）的变化。根据本发明的传感器的结构使得传感器的尺寸不仅可以减小，而且可以降低制造成本。当FET施加应力时，跨导变化，温度变化，I-V特性变化。一个通过直流电流偏置的信号被提供给FET的栅极，并且以直流方式检测漏极电流。组件和直径以便与应力的检测同时检测温度。

7. 发明授权

US5115292A Semiconductor sensor 失效
标题翻译：半导体传感器
公开(公告)号：US5115292A
公开(公告)日：1992-05-19
申请号：US403296
申请日：1989-09-05
申请人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
发明人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
IPC分类号： G01P15/08 , G01P15/12
CPC分类号： G01P15/123 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L2224/48091 , H01L2924/12032 , H01L2924/13091 , Y10S73/04
摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.

8. 发明申请

US20080066295A1 Magnetostrictive coat forming method, magnetostrictive torque sensor manufacturing method, and electric power steering apparatus employing the sensor 有权
标题翻译：磁致伸缩涂层成形方法，磁致伸缩扭矩传感器制造方法以及使用该传感器的电动助力转向装置
公开(公告)号：US20080066295A1
公开(公告)日：2008-03-20
申请号：US11983085
申请日：2007-11-07
申请人： Yasuo Shimizu , Yoshito Nakamura , Shunichiro Sueyoshi , Nobuhiko Yoshimoto , Koji Kobayashi , Yuichi Fukuda , Mizuho Doi , Hitoshi Harada , Tomohiro Hoshi
发明人： Yasuo Shimizu , Yoshito Nakamura , Shunichiro Sueyoshi , Nobuhiko Yoshimoto , Koji Kobayashi , Yuichi Fukuda , Mizuho Doi , Hitoshi Harada , Tomohiro Hoshi
IPC分类号： H01F7/02 , B62D5/04
CPC分类号： G01L3/102 , G01L3/103 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/49078 , Y10T29/49224
摘要： For forming an annular magnetostrictive coat on an outer peripheral surface of a rotational shaft associated with a magnetostrictive torque sensor, a magnetostrictive-coat forming method comprises a step of fitting a cylindrical masking jig over the outer peripheral surface of the rotational shaft and securing the masking jig to the outer peripheral surface, a step of placing the rotational shaft in a plating tank to thereby form the magnetostrictive coat by plating on the outer peripheral surface, and a step of detaching the masking jig from the rotational shaft.
摘要翻译：为了在与磁致伸缩扭矩传感器相关联的旋转轴的外周表面上形成环形磁致伸缩涂层，磁致伸缩涂层形成方法包括将圆柱形掩模夹具安装在旋转轴的外周表面上并确保掩模夹具到外周面，将旋转轴放置在镀槽中，由此通过在外周面上电镀形成磁致伸缩涂层的步骤，以及将掩模夹具从旋转轴上分离的步骤。

9. 发明申请

US20070089538A1 Method for manufacturing magnetostrictive torque sensor 审中-公开
标题翻译：制造磁致伸缩转矩传感器的方法
公开(公告)号：US20070089538A1
公开(公告)日：2007-04-26
申请号：US11540550
申请日：2006-10-02
申请人： Yukiya Kashimura , Mizuho Doi , Hitoshi Harata , Yuichi Fukuda , Nobuhiko Yoshimoto
发明人： Yukiya Kashimura , Mizuho Doi , Hitoshi Harata , Yuichi Fukuda , Nobuhiko Yoshimoto
IPC分类号： G01L3/00
CPC分类号： G01L3/105 , G01L3/102 , G01L3/103
摘要： A method for manufacturing a magnetostrictive torque sensor compriseis the steps of forming magnetostrictive films on a rotating shaft of a magneto-strictive torque sensor, creating magnetic anisotropy in the magnetostrictive films formed in the magnetostrictive film formation step, and demagnetizing the rotating shaft. The demagnetization step is provided in any of the stages after the magnetostrictive film formation step, and comprises initializing the remanent magnetism created in the rotating shaft.
摘要翻译：用于制造磁致伸缩扭矩传感器的方法包括以下步骤：在磁致伸缩扭矩传感器的旋转轴上形成磁致伸缩膜，在磁致伸缩膜形成步骤中形成的磁致伸缩膜产生磁各向异性，并使旋转轴消磁。在磁致伸缩膜形成步骤之后的任何阶段提供退磁步骤，并且包括初始化在旋转轴中产生的剩余磁性。

10. 发明授权

US07386930B2 Method for manufacturing a magnetostrictive torque sensor 有权
标题翻译：磁致伸缩扭矩传感器的制造方法
公开(公告)号：US07386930B2
公开(公告)日：2008-06-17
申请号：US11983085
申请日：2007-11-07
申请人： Yasuo Shimizu , Yoshito Nakamura , Shunichiro Sueyoshi , Nobuhiko Yoshimoto , Koji Kobayashi , Yuichi Fukuda , Mizuho Doi , Hitoshi Harada , Tomohiro Hoshi
发明人： Yasuo Shimizu , Yoshito Nakamura , Shunichiro Sueyoshi , Nobuhiko Yoshimoto , Koji Kobayashi , Yuichi Fukuda , Mizuho Doi , Hitoshi Harada , Tomohiro Hoshi
IPC分类号： H04R31/00
CPC分类号： G01L3/102 , G01L3/103 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/49078 , Y10T29/49224
摘要： For forming an annular magnetostrictive coat on an outer peripheral surface of a rotational shaft associated with a magnetostrictive torque sensor, a magnetostrictive coat forming method comprises a step of fitting a cylindrical masking jig over the outer peripheral surface of the rotational shaft and securing the masking jig to the outer peripheral surface, a step of placing the rotational shaft in a plating tank to thereby form the magnetostrictive coat by plating on the outer peripheral surface, and a step of detaching the masking jig from the rotational shaft.
摘要翻译：为了在与磁致伸缩扭矩传感器相关联的旋转轴的外周表面上形成环形磁致伸缩涂层，磁致伸缩涂层形成方法包括将圆柱形掩模夹具安装在旋转轴的外周表面上并固定掩模夹具在外周面上设置将旋转轴配置在镀槽内，通过在外周面上电镀而形成磁致伸缩涂层的步骤，以及将掩模夹具与旋转轴分离的工序。

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