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1. 发明申请

US20110287589A1 METHOD FOR MANUFACTURING ANTENNA AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造天线的方法和制造半导体器件的方法
公开(公告)号：US20110287589A1
公开(公告)日：2011-11-24
申请号：US13196133
申请日：2011-08-02
申请人： Tomoyuki AOKI , Daiki YAMADA
发明人： Tomoyuki AOKI , Daiki YAMADA
IPC分类号： H01L21/56
CPC分类号： H01L27/1266 , H01L21/6835 , H01L21/6836 , H01L21/76826 , H01L21/76856 , H01L23/5227 , H01L24/83 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2221/68363 , H01L2223/6677 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2924/01012 , H01L2924/01067 , H01L2924/01068 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/3011 , H01L2924/3025 , H01Q1/2225 , H05K1/095 , H05K3/02 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides an antenna with low resistance and a semiconductor device having an antenna whose communication distance is improved. A fluid containing conductive particles is applied over an object. After curing the fluid containing the conductive particles, the fluid is irradiated with a laser to form an antenna. As a method for applying the fluid containing the conductive particles, screen printing, spin coating, dipping, or a droplet discharging method is used. Further, a solid laser having a wavelength of 1 nm or more and 380 nm or less is used as the laser.
摘要翻译：本发明提供一种具有低电阻的天线和具有提高通信距离的天线的半导体器件。含有导电颗粒的流体被施加在物体上。在固化含有导电颗粒的流体之后，用激光照射流体以形成天线。作为施加含有导电性粒子的流体的方法，使用丝网印刷，旋涂，浸渍或液滴喷射法。此外，使用波长为1nm以上且380nm以下的固体激光器作为激光。

2. 发明申请

US20100099224A1 METHOD FOR MANUFACTURING ANTENNA AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造天线的方法和制造半导体器件的方法
公开(公告)号：US20100099224A1
公开(公告)日：2010-04-22
申请号：US12645511
申请日：2009-12-23
申请人： Tomoyuki AOKI , Daiki YAMADA
发明人： Tomoyuki AOKI , Daiki YAMADA
IPC分类号： H01L21/56
CPC分类号： H01L27/1266 , H01L21/6835 , H01L21/6836 , H01L21/76826 , H01L21/76856 , H01L23/5227 , H01L24/83 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2221/68363 , H01L2223/6677 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2924/01012 , H01L2924/01067 , H01L2924/01068 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/3011 , H01L2924/3025 , H01Q1/2225 , H05K1/095 , H05K3/02 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides an antenna with low resistance and a semiconductor device having an antenna whose communication distance is improved. A fluid containing conductive particles is applied over an object. After curing the fluid containing the conductive particles, the fluid is irradiated with a laser to form an antenna. As a method for applying the fluid containing the conductive particles, screen printing, spin coating, dipping, or a droplet discharging method is used. Further, a solid laser having a wavelength of 1 nm or more and 380 nm or less is used as the laser.
摘要翻译：本发明提供一种具有低电阻的天线和具有提高通信距离的天线的半导体器件。含有导电颗粒的流体被施加在物体上。在固化含有导电颗粒的流体之后，用激光照射流体以形成天线。作为施加含有导电性粒子的流体的方法，使用丝网印刷，旋涂，浸渍或液滴喷射法。此外，使用波长为1nm以上且380nm以下的固体激光器作为激光。

3. 发明申请

US20110101366A1 PAPER INCLUDING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：包括半导体器件的纸张及其制造方法
公开(公告)号：US20110101366A1
公开(公告)日：2011-05-05
申请号：US12985364
申请日：2011-01-06
申请人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Kaori OGITA , Naoto KUSUMOTO
发明人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Kaori OGITA , Naoto KUSUMOTO
IPC分类号： H01L29/786
CPC分类号： D21H21/48 , B32B29/00 , D21H27/32 , G06K19/07749 , H01L23/49855 , H01L27/1214 , H01L27/1255 , H01L27/1266 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.
摘要翻译：实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。半导体器件以造纸工艺嵌入纸中。

4. 发明申请

US20100126681A1 PAPER INCLUDING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：包括半导体器件的纸张及其制造方法
公开(公告)号：US20100126681A1
公开(公告)日：2010-05-27
申请号：US12694505
申请日：2010-01-27
申请人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Kaori OGITA , Naoto KUSUMOTO
发明人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Kaori OGITA , Naoto KUSUMOTO
IPC分类号： D21H23/00
CPC分类号： D21H21/48 , B32B29/00 , D21H27/32 , G06K19/07749 , H01L23/49855 , H01L27/1214 , H01L27/1255 , H01L27/1266 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.
摘要翻译：实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。半导体器件以造纸工艺嵌入纸中。

5. 发明申请

US20120080810A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20120080810A1
公开(公告)日：2012-04-05
申请号：US13271469
申请日：2011-10-12
申请人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Eiji SUGIYAMA , Kaori OGITA , Naoto KUSUMOTO
发明人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Eiji SUGIYAMA , Kaori OGITA , Naoto KUSUMOTO
IPC分类号： H01L29/02
CPC分类号： H01L23/293 , H01L23/49855 , H01L23/66 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L28/10 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.
摘要翻译：本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值在导电层上形成的绝缘层与导电层的厚度比为至少0.2。此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

6. 发明申请

US20110039373A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20110039373A1
公开(公告)日：2011-02-17
申请号：US12854060
申请日：2010-08-10
申请人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Eiji SUGIYAMA , Kaori OGITA , Naoto KUSUMOTO
发明人： Yoshitaka DOZEN , Tomoyuki AOKI , Hidekazu TAKAHASHI , Daiki YAMADA , Eiji SUGIYAMA , Kaori OGITA , Naoto KUSUMOTO
IPC分类号： H01L21/56
CPC分类号： H01L23/293 , H01L23/49855 , H01L23/66 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L28/10 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
摘要翻译：本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值在导电层上形成的绝缘层与导电层的厚度比为至少0.2。此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

7. 发明申请

US20120021540A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120021540A1
公开(公告)日：2012-01-26
申请号：US13244397
申请日：2011-09-24
申请人： Hidekazu TAKAHASHI , Daiki YAMADA , Yohei MONMA , Takahiro IGUCHI , Hiroki ADACHI , Shunpei YAMAZAKI
发明人： Hidekazu TAKAHASHI , Daiki YAMADA , Yohei MONMA , Takahiro IGUCHI , Hiroki ADACHI , Shunpei YAMAZAKI
IPC分类号： H01L21/66 , H01L31/0203
CPC分类号： H01L27/14625 , H01L27/14806 , H01L31/075
摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
摘要翻译：半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。多个半导体集成电路包括不同颜色的彩色透光树脂层。

8. 发明申请

US20110062543A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110062543A1
公开(公告)日：2011-03-17
申请号：US12949301
申请日：2010-11-18
申请人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
发明人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
IPC分类号： H01L31/06
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

9. 发明申请

US20110012218A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012218A1
公开(公告)日：2011-01-20
申请号：US12892381
申请日：2010-09-28
申请人： Yohei MONMA , Daiki YAMADA , Hidekazu TAKAHASHI , Yuusuke SUGAWARA , Kazuo NISHI
发明人： Yohei MONMA , Daiki YAMADA , Hidekazu TAKAHASHI , Yuusuke SUGAWARA , Kazuo NISHI
IPC分类号： H01L31/0232 , H01L23/48
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

10. 发明申请

US20090194154A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090194154A1
公开(公告)日：2009-08-06
申请号：US12358449
申请日：2009-01-23
申请人： Hidekazu TAKAHASHI , Yohei MONMA , Daiki YAMADA , Takahiro IGUCHI , Kazuo NISHI
发明人： Hidekazu TAKAHASHI , Yohei MONMA , Daiki YAMADA , Takahiro IGUCHI , Kazuo NISHI
IPC分类号： H01L31/105 , H01L31/02 , H01L21/66 , H01L21/98
CPC分类号： H01L31/02162 , H01L25/0655 , H01L27/14621 , H01L27/14643 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface. The colors of the chromatic color light transmitting resin layers are different in each of the plurality of semiconductor integrated circuits.
摘要翻译：目的是通过半导体器件的外部应力来减少裂纹，裂纹和芯片的外观破损。另一个目的是提高薄半导体器件的制造成品率。半导体器件包括安装在插入器上的多个半导体集成电路。所述多个半导体集成电路中的每一个都包括透光基板，所述透光基板在所述侧表面具有台阶，并且所述透光基板的一部分的宽度比所述透光基板的另一部分的宽度窄，当所述光发送基板在包括该台阶的平面处被分割，包括设置在透光基板的一个表面上的光电转换元件的半导体元件层和覆盖透光基板的另一个表面的彩色透光树脂层和侧面的一部分。多色半导体集成电路中的彩色透光树脂层的颜色不同。

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