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1. 发明申请

US20090194154A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090194154A1
公开(公告)日：2009-08-06
申请号：US12358449
申请日：2009-01-23
申请人： Hidekazu TAKAHASHI , Yohei MONMA , Daiki YAMADA , Takahiro IGUCHI , Kazuo NISHI
发明人： Hidekazu TAKAHASHI , Yohei MONMA , Daiki YAMADA , Takahiro IGUCHI , Kazuo NISHI
IPC分类号： H01L31/105 , H01L31/02 , H01L21/66 , H01L21/98
CPC分类号： H01L31/02162 , H01L25/0655 , H01L27/14621 , H01L27/14643 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface. The colors of the chromatic color light transmitting resin layers are different in each of the plurality of semiconductor integrated circuits.
摘要翻译：目的是通过半导体器件的外部应力来减少裂纹，裂纹和芯片的外观破损。另一个目的是提高薄半导体器件的制造成品率。半导体器件包括安装在插入器上的多个半导体集成电路。所述多个半导体集成电路中的每一个都包括透光基板，所述透光基板在所述侧表面具有台阶，并且所述透光基板的一部分的宽度比所述透光基板的另一部分的宽度窄，当所述光发送基板在包括该台阶的平面处被分割，包括设置在透光基板的一个表面上的光电转换元件的半导体元件层和覆盖透光基板的另一个表面的彩色透光树脂层和侧面的一部分。多色半导体集成电路中的彩色透光树脂层的颜色不同。

2. 发明申请

US20110012218A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012218A1
公开(公告)日：2011-01-20
申请号：US12892381
申请日：2010-09-28
申请人： Yohei MONMA , Daiki YAMADA , Hidekazu TAKAHASHI , Yuusuke SUGAWARA , Kazuo NISHI
发明人： Yohei MONMA , Daiki YAMADA , Hidekazu TAKAHASHI , Yuusuke SUGAWARA , Kazuo NISHI
IPC分类号： H01L31/0232 , H01L23/48
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

3. 发明申请

US20070210344A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070210344A1
公开(公告)日：2007-09-13
申请号：US11681638
申请日：2007-03-02
申请人： Tatsuya ARAO , Daiki YAMADA , Hidekazu TAKAHASHI , Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA , Hironobu TAKAHASHI
发明人： Tatsuya ARAO , Daiki YAMADA , Hidekazu TAKAHASHI , Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA , Hironobu TAKAHASHI
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触，并且其中滤色器的端部位于光电转换层的另一端部的内部。

4. 发明申请

US20070113886A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20070113886A1
公开(公告)日：2007-05-24
申请号：US11559477
申请日：2006-11-14
申请人： Tatsuya Arao , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi , Kazuo NISHI , Yuusuke Sugawara , Hironobu Takahashi , Shuji Fukai
发明人： Tatsuya Arao , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi , Kazuo NISHI , Yuusuke Sugawara , Hironobu Takahashi , Shuji Fukai
IPC分类号： H01L31/00
CPC分类号： H01L31/022408 , H01L27/14609 , H01L27/14636 , H01L27/14643 , H01L27/14692 , H01L31/03762
摘要： A photoelectric conversion device provided with a photoelectric conversion layer between a first electrode and a second electrode is formed. The first electrode is partially in contact with the photoelectric conversion layer, and a cross-sectional shape of the first electrode in the contact portion is a taper shape. In this case, part of a first semiconductor layer with one conductivity type is in contact with the first electrode. A planer shape in an edge portion of the first electrode is preferably nonangular, that is, a shape in which edges are planed or a curved shape. By such a structure, concentration of an electric field and concentration of a stress can be suppressed, whereby characteristic deterioration of the photoelectric conversion device can be reduced.
摘要翻译：形成在第一电极和第二电极之间设置有光电转换层的光电转换装置。第一电极部分地与光电转换层接触，并且接触部分中的第一电极的截面形状是锥形。在这种情况下，具有一种导电类型的第一半导体层的一部分与第一电极接触。第一电极的边缘部分中的平面形状优选地是非矩形的，即边缘是平面的形状或弯曲的形状。通过这样的结构，可以抑制电场的浓度和应力的集中，从而可以降低光电转换装置的特性劣化。

5. 发明申请

US20110062543A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110062543A1
公开(公告)日：2011-03-17
申请号：US12949301
申请日：2010-11-18
申请人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
发明人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
IPC分类号： H01L31/06
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

6. 发明申请

US20110073981A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110073981A1
公开(公告)日：2011-03-31
申请号：US12965367
申请日：2010-12-10
申请人： Kazuo NISHI , Hiroki ADACHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA , Tomoyuki AOKI , Eiji SUGIYAMA , Hironobu TAKAHASHI
发明人： Kazuo NISHI , Hiroki ADACHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA , Tomoyuki AOKI , Eiji SUGIYAMA , Hironobu TAKAHASHI
IPC分类号： H01L31/0224
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

7. 发明申请

US20100187405A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100187405A1
公开(公告)日：2010-07-29
申请号：US12752173
申请日：2010-04-01
申请人： Tatsuya ARAO , Atsushi HIROSE , Kazuo NISHI , Yuusuke SUGAWARA
发明人： Tatsuya ARAO , Atsushi HIROSE , Kazuo NISHI , Yuusuke SUGAWARA
IPC分类号： H01L27/144 , H03F3/08 , H01L31/102
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

8. 发明申请

US20100307590A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20100307590A1
公开(公告)日：2010-12-09
申请号：US12792175
申请日：2010-06-02
申请人： Shunpei YAMAZAKI , Kazuo NISHI
发明人： Shunpei YAMAZAKI , Kazuo NISHI
IPC分类号： H01L31/00
CPC分类号： H01L31/1884 , C23C14/0676 , H01L31/022466 , H01L31/022483 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/076 , H01L31/077 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a technique in which a cheap zinc oxide material can be used as a light-transmitting conductive film of a photoelectric conversion device. The present invention is a photoelectric conversion device including, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer, and a second impurity semiconductor layer having a conductivity type opposite to the first impurity semiconductor layer are sequentially stacked and a semiconductor junction is included. The first electrode or the second electrode includes conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum: the relative proportion of the zinc is less than or equal to 47 at. % and higher than that of the aluminum; and the relative proportion of the aluminum is higher than that of nitrogen.
摘要翻译：本发明提供了可以使用便宜的氧化锌材料作为光电转换装置的透光导电膜的技术。本发明是一种光电转换装置，在第一电极和第二电极之间包括至少一个单元电池，其中具有一种导电类型的第一杂质半导体层，半导体层和具有导电类型的第二杂质半导体层与第一杂质半导体层相对的顺序堆叠并且包括半导体结。第一电极或第二电极包括含有锌和铝的导电氮氧化物。在含有锌和铝的导电氮氧化物中：锌的相对比例小于或等于47at。％以上; 铝的相对比例高于氮。

9. 发明申请

US20100307559A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100307559A1
公开(公告)日：2010-12-09
申请号：US12793329
申请日：2010-06-03
申请人： Shunpei YAMAZAKI , Yukie SUZUKI , Kazuo NISHI , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Yukie SUZUKI , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/1896 , H01L31/043 , H01L31/046 , H01L31/0465 , H01L31/048 , H01L2924/0002 , H01L2924/09701 , H02S40/38 , Y02E10/50 , H01L2924/00
摘要： An object is to provide a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process. The photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body which firmly attaches the first cell and the second cell. As a result, p-i-n junctions are bonded with the structure body in which the fibrous body is impregnated with an organic resin, which is a so-called prepreg. Thus, a photoelectric conversion device whose mechanical strength is increased can be realized while the manufacturing cost is reduced.
摘要翻译：本发明的目的是提供一种其机械强度增加而不会使制造过程复杂化的光电转换装置。光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元，以及包括牢固地附接第一单元和第二单元的纤维体的结构体。结果，p-i-n结与其中纤维体被浸渍有机树脂的结构体结合，所述有机树脂是所谓的预浸料。因此，可以实现机械强度提高的光电转换装置，同时降低制造成本。

10. 发明申请

US20100307558A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100307558A1
公开(公告)日：2010-12-09
申请号：US12793294
申请日：2010-06-03
申请人： Shunpei YAMAZAKI , Satohiro OKAMOTO , Kazuo NISHI
发明人： Shunpei YAMAZAKI , Satohiro OKAMOTO , Kazuo NISHI
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/028 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/076 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： To provide a multi junction photoelectric conversion device which can be manufactured using a simple method. The photoelectric conversion device includes a first cell provided with a photoelectric conversion function, a second cell provided with a photoelectric conversion function, and a structure body having a function of fixing the first cell and the second cell to each other and electrically connecting the first cell and the second cell to each other. A multi junction photoelectric conversion device in which sufficient conductivity between p-i-n junctions is provided and semiconductor junctions are connected in series can be provided. With this structure, it is possible to obtain sufficient electromotive force.
摘要翻译：提供可以使用简单方法制造的多结光电转换装置。光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元和具有将第一单元和第二单元彼此固定并将第一单元电连接的功能的结构体和第二个单元。可以提供其中提供p-i-n结之间的足够导电性并且半导体结串联连接的多结光电转换装置。利用这种结构，可以获得足够的电动势。

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