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1. 发明申请

US20110062543A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110062543A1
公开(公告)日：2011-03-17
申请号：US12949301
申请日：2010-11-18
申请人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
发明人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
IPC分类号： H01L31/06
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

2. 发明申请

US20070210344A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070210344A1
公开(公告)日：2007-09-13
申请号：US11681638
申请日：2007-03-02
申请人： Tatsuya ARAO , Daiki YAMADA , Hidekazu TAKAHASHI , Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA , Hironobu TAKAHASHI
发明人： Tatsuya ARAO , Daiki YAMADA , Hidekazu TAKAHASHI , Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA , Hironobu TAKAHASHI
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触，并且其中滤色器的端部位于光电转换层的另一端部的内部。

3. 发明申请

US20100187405A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100187405A1
公开(公告)日：2010-07-29
申请号：US12752173
申请日：2010-04-01
申请人： Tatsuya ARAO , Atsushi HIROSE , Kazuo NISHI , Yuusuke SUGAWARA
发明人： Tatsuya ARAO , Atsushi HIROSE , Kazuo NISHI , Yuusuke SUGAWARA
IPC分类号： H01L27/144 , H03F3/08 , H01L31/102
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

4. 发明申请

US20100075455A1 FILM FORMATION APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：膜形成装置，成膜方法及制造光电转换装置的方法
公开(公告)号：US20100075455A1
公开(公告)日：2010-03-25
申请号：US12627473
申请日：2009-11-30
申请人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
发明人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： H01L31/18
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在基板在缓冲室内进出的部分的狭缝，以及具有用于重绕基板的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

5. 发明申请

US20110232571A1 FILM FORMATION APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：膜形成装置，成膜方法及制造光电转换装置的方法
公开(公告)号：US20110232571A1
公开(公告)日：2011-09-29
申请号：US13154503
申请日：2011-06-07
申请人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
发明人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： C23C16/50
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

6. 发明申请

US20070278606A1 PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件和光电转换元件的制造方法
公开(公告)号：US20070278606A1
公开(公告)日：2007-12-06
申请号：US11737477
申请日：2007-04-19
申请人： Shinya SASAGAWA , Shinya HASEGAWA , Hidekazu TAKAHASHI , Tatsuya ARAO
发明人： Shinya SASAGAWA , Shinya HASEGAWA , Hidekazu TAKAHASHI , Tatsuya ARAO
IPC分类号： H01L31/075 , H01L31/18
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
摘要翻译：本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残余物导电。光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面的n层，它们不在同一平面。

7. 发明申请

US20090084944A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE USING THE SAME 有权
标题翻译：半导体器件和使用该器件的电子器件
公开(公告)号：US20090084944A1
公开(公告)日：2009-04-02
申请号：US12328978
申请日：2008-12-05
申请人： Atsushi HIROSE , Tatsuya ARAO
发明人： Atsushi HIROSE , Tatsuya ARAO
IPC分类号： G01J1/44
CPC分类号： H01L27/1443 , G01J1/1626 , G01J1/4228 , G01J1/44
摘要： The semiconductor device includes a first photodiode, a second photodiode which is shielded from light, a first circuit group including a voltage follower circuit, a second circuit group, and a compensation circuit, in which an output from the first photodiode is inputted to the voltage follower circuit of the first circuit group, an output from the first circuit group is inputted to the compensation circuit, and an output from the second photodiode is inputted to the compensation circuit through the second circuit group. By adding or subtracting these inputs in the compensation circuit, an output fluctuation due to temperature of the first photodiode is removed. Note that a reference potential is supplied to the first photodiode so that an open circuit voltage is outputted, and a potential is supplied to the second photodiode so that a forward bias is applied to the second photodiode.
摘要翻译：半导体器件包括第一光电二极管，屏蔽光的第二光电二极管，包括电压跟随器电路，第二电路组和补偿电路的第一电路组，其中第一光电二极管的输出被输入到电压第一电路组的跟随器电路，第一电路组的输出被输入到补偿电路，并且来自第二光电二极管的输出通过第二电路组输入到补偿电路。通过在补偿电路中增加或减去这些输入，消除由于第一光电二极管的温度引起的输出波动。注意，参考电位被提供给第一光电二极管，使得输出开路电压，并且向第二光电二极管提供电位，使得正向偏压被施加到第二光电二极管。

8. 发明申请

US20120187457A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120187457A1
公开(公告)日：2012-07-26
申请号：US13440157
申请日：2012-04-05
申请人： Shunpei YAMAZAKI , Tatsuya ARAO
发明人： Shunpei YAMAZAKI , Tatsuya ARAO
IPC分类号： H01L27/06
CPC分类号： H01L27/1266 , G06K19/07749 , G06K19/07775 , G06K19/07779 , H01L27/12 , H01L27/1214 , H01L27/13 , H01Q1/2208 , H01Q1/2283 , H01Q1/38 , H01Q23/00
摘要： A semiconductor device such as an ID chip of the present invention includes an integrated circuit using a semiconductor element formed by using a thin semiconductor film, and an antenna connected to the integrated circuit. It is preferable that the antenna is formed integrally with the integrated circuit, since the mechanical strength of an ID chip can be enhanced. Note that the antenna used in the present invention also includes a conducting wire that is wound round circularly or spirally and fine particles of a soft magnetic material are arranged between the conducting wires. Specifically, an insulating layer in which fine particles of a soft magnetic material are arranged between the conducting wires. Specifically, an insulating layer in which fine particles of a soft magnetic material are included is arranged between the conducting wires.
摘要翻译：本发明的ID芯片等半导体装置包括使用由半导体薄膜形成的半导体元件的集成电路和与集成电路连接的天线。优选地，天线与集成电路一体形成，因为可以提高ID芯片的机械强度。注意，本发明中使用的天线还包括绕圆形或螺旋状地缠绕的导线，并且在导线之间布置有软磁性材料的细小颗粒。具体而言，在导线之间配置有软磁性材料的细微粒子的绝缘层。具体而言，在导线之间配置有包含软磁性材料的微粒的绝缘层。

9. 发明申请

US20100029068A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20100029068A1
公开(公告)日：2010-02-04
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L21/311 , H01L21/20
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

10. 发明申请

US20100006854A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100006854A1
公开(公告)日：2010-01-14
申请号：US12501801
申请日：2009-07-13
申请人： Koji ONO , Hideomi SUZAWA , Tatsuya ARAO
发明人： Koji ONO , Hideomi SUZAWA , Tatsuya ARAO
IPC分类号： H01L33/00
CPC分类号： H01L27/1222 , G02F1/13624 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L33/08 , H01L33/62 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.
摘要翻译：在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造降低成本，并通过减少工艺步骤的数量来提高产量。半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

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