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1. 发明申请

US20090134394A1 CRYSTAL SILICON ARRAY, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR 审中-公开
标题翻译：晶体硅阵列，薄膜晶体管的制造方法
公开(公告)号：US20090134394A1
公开(公告)日：2009-05-28
申请号：US12277732
申请日：2008-11-25
申请人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
发明人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/02381 , H01L21/02686 , H01L27/1296 , H01L29/04
摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.
摘要翻译：晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。

2. 发明申请

US20080289573A1 CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS 失效
标题翻译：结晶方法，结晶装置，处理基板，薄膜晶体管和显示装置
公开(公告)号：US20080289573A1
公开(公告)日：2008-11-27
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： B05B5/00
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

3. 发明申请

US20060186412A1 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 审中-公开
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US20060186412A1
公开(公告)日：2006-08-24
申请号：US11408022
申请日：2006-04-21
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/76
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

4. 发明申请

US20060027162A1 Crystallization apparatus, crystallization method, and phase modulation device 有权
标题翻译：结晶装置，结晶方法和相位调制装置
公开(公告)号：US20060027162A1
公开(公告)日：2006-02-09
申请号：US11098647
申请日：2005-04-05
申请人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
发明人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B1/00 , C30B13/24 , Y10T117/1004
摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.
摘要翻译：本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。

5. 发明授权

US08009345B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US08009345B2
公开(公告)日：2011-08-30
申请号：US12962750
申请日：2010-12-08
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

6. 发明申请

US20110075237A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US20110075237A1
公开(公告)日：2011-03-31
申请号：US12962750
申请日：2010-12-08
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

7. 发明授权

US07897946B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
公开(公告)号：US07897946B2
公开(公告)日：2011-03-01
申请号：US12051213
申请日：2008-03-19
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： A61N5/00
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

8. 发明授权

US07347897B2 Crystallization apparatus, crystallization method, and phase modulation device 有权
标题翻译：结晶装置，结晶方法和相位调制装置
公开(公告)号：US07347897B2
公开(公告)日：2008-03-25
申请号：US11098647
申请日：2005-04-05
申请人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
发明人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： C30B35/00
CPC分类号： C30B1/00 , C30B13/24 , Y10T117/1004
摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.
摘要翻译：本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。

9. 发明授权

US08114217B2 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 失效
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US08114217B2
公开(公告)日：2012-02-14
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： C30B1/02
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

10. 发明申请

US20080230725A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US20080230725A1
公开(公告)日：2008-09-25
申请号：US12051213
申请日：2008-03-19
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： H01L21/268 , H01J37/22
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线基本上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

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