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1. 发明授权

US08009345B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US08009345B2
公开(公告)日：2011-08-30
申请号：US12962750
申请日：2010-12-08
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

2. 发明申请

US20080230725A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US20080230725A1
公开(公告)日：2008-09-25
申请号：US12051213
申请日：2008-03-19
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： H01L21/268 , H01J37/22
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线基本上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

3. 发明申请

US20090134394A1 CRYSTAL SILICON ARRAY, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR 审中-公开
标题翻译：晶体硅阵列，薄膜晶体管的制造方法
公开(公告)号：US20090134394A1
公开(公告)日：2009-05-28
申请号：US12277732
申请日：2008-11-25
申请人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
发明人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/02381 , H01L21/02686 , H01L27/1296 , H01L29/04
摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.
摘要翻译：晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。

4. 发明申请

US20110075237A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US20110075237A1
公开(公告)日：2011-03-31
申请号：US12962750
申请日：2010-12-08
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

5. 发明授权

US07897946B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
公开(公告)号：US07897946B2
公开(公告)日：2011-03-01
申请号：US12051213
申请日：2008-03-19
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： A61N5/00
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

6. 发明授权

US07309900B2 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US07309900B2
公开(公告)日：2007-12-18
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L29/76
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

7. 发明申请

US20070228469A1 THIN-FILM TRANSISTOR FORMED ON INSULATING SUBSTRATE 审中-公开
标题翻译：形成绝缘基板的薄膜晶体管
公开(公告)号：US20070228469A1
公开(公告)日：2007-10-04
申请号：US11758217
申请日：2007-06-05
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

8. 发明申请

US20050212063A1 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US20050212063A1
公开(公告)日：2005-09-29
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L21/336 , H01L21/77 , H01L21/8236 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

9. 发明授权

US08353979B2 Heat recovery apparatus and heat recovery method 失效
标题翻译：热回收装置和热回收方法
公开(公告)号：US08353979B2
公开(公告)日：2013-01-15
申请号：US12754741
申请日：2010-04-06
申请人： Tsuyoshi Oishi , Hiroshi Tanaka , Takahiko Endo , Masahiko Tatsumi , Yasuyuki Yagi
发明人： Tsuyoshi Oishi , Hiroshi Tanaka , Takahiko Endo , Masahiko Tatsumi , Yasuyuki Yagi
IPC分类号： B01D53/14
CPC分类号： F23R3/14 , F22D1/003 , Y02C10/06
摘要： A heat recovery apparatus, for an absorption apparatus for removing CO2 in combustion exhaust gas emitted from a thermal power plant 112 and for regeneration apparatuses 104 to 107 for regenerating CO2 in an absorbing liquid from the absorption apparatus, includes a regeneration-apparatus-exit-CO2-gas cooling apparatus 100 for cooling CO2 gas from an exhaust port of the regeneration apparatus, and may further include a circulation line 102 for circulating reflux water among boiler feedwater heaters 114 and 116 in the thermal power plant 112 and the regeneration-apparatus-exit-CO2-gas cooling apparatus 100.
摘要翻译：一种用于从热电厂112排出的燃烧废气中除去CO 2的吸收装置和用于从吸收装置再生吸收液中的CO 2的再生装置104至107的热回收装置，包括再生装置 - 用于从再生装置的排气口冷却CO 2气体的CO 2气体冷却装置100，还可以包括在热力发电厂112和再生装置100中的锅炉给水加热器114和116之间循环回流水的循环管线102。出口CO 2气体冷却装置100。

10. 发明授权

US07580770B2 Numerical controller 有权
标题翻译：数控机
公开(公告)号：US07580770B2
公开(公告)日：2009-08-25
申请号：US11395268
申请日：2006-04-03
申请人： Takahiko Endo , Yasushi Takeuchi
发明人： Takahiko Endo , Yasushi Takeuchi
IPC分类号： G06F19/00
CPC分类号： G05B19/4103 , G05B2219/41209 , G05B2219/42189
摘要： A path table operation is performed while updating the reference positions. When a read-out command in the path cycle table is read out, the reference positions are withdrawn and reset, and the respective axial positions at the time of the initiation of the path cycle command are stored. From the next period, the target positions are determined by adding the positions at the time of initiation to the respective axial positions corresponding to the reference positions stored in the path cycle table, and a path table operation is performed. A single path cycle table is sufficient for storing commands for portions to be repeatedly worked.
摘要翻译：在更新参考位置的同时执行路径表操作。当读出路径循环表中的读出命令时，引用和复位参考位置，并且存储在路径循环命令开始时的相应的轴向位置。从下一个周期中，通过将启动时的位置与对应于存储在路径周期表中的基准位置的各个轴位置相加来确定目标位置，并执行路径表操作。单个路径循环表足以存储要重复工作的部分的命令。

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