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1. 发明申请

US20090224253A1 CRYSTALLIZATION METHOD, THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, DISPLAY, AND SEMICONDUCTOR DEVICE 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管，显示器和半导体器件
公开(公告)号：US20090224253A1
公开(公告)日：2009-09-10
申请号：US12467852
申请日：2009-05-18
申请人： Tomoya KATO , Masakiyo MATSUMURA
发明人： Tomoya KATO , Masakiyo MATSUMURA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02675 , H01L21/02609 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
摘要翻译：根据结晶化方法，在通过用激光照射设置在绝缘基板上的40〜100nm的非单一半导体薄膜的结晶化中，在基板的表面上形成具有逆峰图案的光强度分布控制光强分布的光强度梯度，形成晶体晶格阵列，其中每个晶粒在晶体生长方向上比在宽度方向上具有更长的形状，并且具有优选的晶体取向（100）形成晶粒长度方向，并且形成TFT，其中形成源区和漏区，使得电流在晶粒生长方向上流过晶粒阵列的多个晶粒。

2. 发明申请

US20090134394A1 CRYSTAL SILICON ARRAY, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR 审中-公开
标题翻译：晶体硅阵列，薄膜晶体管的制造方法
公开(公告)号：US20090134394A1
公开(公告)日：2009-05-28
申请号：US12277732
申请日：2008-11-25
申请人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
发明人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/02381 , H01L21/02686 , H01L27/1296 , H01L29/04
摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.
摘要翻译：晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。

3. 发明申请

US20080289573A1 CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS 失效
标题翻译：结晶方法，结晶装置，处理基板，薄膜晶体管和显示装置
公开(公告)号：US20080289573A1
公开(公告)日：2008-11-27
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： B05B5/00
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

4. 发明申请

US20060186412A1 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 审中-公开
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US20060186412A1
公开(公告)日：2006-08-24
申请号：US11408022
申请日：2006-04-21
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/76
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

5. 发明申请

US20050212063A1 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US20050212063A1
公开(公告)日：2005-09-29
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L21/336 , H01L21/77 , H01L21/8236 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

6. 发明授权

US06328530B1 MG alloy member and its use 失效
标题翻译： MG合金元件及其用途
公开(公告)号：US06328530B1
公开(公告)日：2001-12-11
申请号：US09261963
申请日：1999-03-03
申请人： Tomoya Kato , Takeshi Obana , Mitsuyoshi Shouji , Kazumi Fujii , Kenya Ohashi
发明人： Tomoya Kato , Takeshi Obana , Mitsuyoshi Shouji , Kazumi Fujii , Kenya Ohashi
IPC分类号： F04D2902
CPC分类号： F04D29/023 , A47L5/22 , C23C22/40 , C23C22/42 , C23C22/44 , F05D2230/90 , F05D2300/125 , F05D2300/17 , F05D2300/512 , F05D2300/611 , Y10T428/3154 , Y10T428/31544
摘要： A Mg alloy member with an anticorrosive coating free from any enviromental load can be produced by using a solution for chemical conversion treatment for anticorrosive coating, which comprises 0.05 to 1 mol/l of an oxoacid compound of heavy metal selected from Mo, W and V and has a pH of 2 to 6 adjusted by sulfuric acid or nitric acid, and is characterized by contacting the surface of Mg alloy preferably containing 2 to 10% Al with the solution, thereby forming a specific oxide film and, if necessary further forming a fluorine-containing organic film on the film, the resulting Mg alloy member being used in electrically driven blowers, note-type personal computers, various household electrical appliances, etc.
摘要翻译：可以通过使用用于防腐涂层的化学转化处理溶液来制备具有不受任何环境负荷的防腐涂层的Mg合金构件，其包含0.05至1mol / l的选自Mo，W和V的重金属的含氧酸化合物并且通过硫酸或硝酸调节pH为2〜6，其特征在于使优选含有2〜10％的Al的Mg合金的表面与溶液接触，由此形成特定的氧化膜，如果需要，进一步形成膜上含氟有机膜，所得Mg合金构件用于电动鼓风机，笔记型个人计算机，各种家用电器等。

7. 发明申请

US20120032179A1 THIN-FILM TRANSISTOR ARRAY DEVICE, ORGANIC EL DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR ARRAY DEVICE 有权
标题翻译：薄膜晶体管阵列器件，有机EL显示器件及制造薄膜晶体管阵列器件的方法
公开(公告)号：US20120032179A1
公开(公告)日：2012-02-09
申请号：US13274491
申请日：2011-10-17
申请人： Tohru SAITOH , Tomoya KATO
发明人： Tohru SAITOH , Tomoya KATO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/0245 , H01L21/02532 , H01L21/02683 , H01L27/1229 , H01L27/1285
摘要： A thin-film transistor array device includes: a driving TFT including a first crystalline semiconductor film including crystal grains having a first average grain size; and a switching TFT including a second crystalline semiconductor film including crystal grains having a second average grain size that is smaller than the first average grain size. The first crystalline semiconductor film and the second crystalline semiconductor film are formed at the same time by irradiating a noncrystalline semiconductor film using a laser beam having a Gaussian light intensity distribution such that a temperature of the noncrystalline semiconductor film is within a range of 600° C. to 1100° C., and the first crystalline semiconductor film is formed such that the temperature of the noncrystalline semiconductor film is within a temperature range of 1100° C. to 1414° C. due to latent heat generated by the laser irradiation.
摘要翻译：薄膜晶体管阵列器件包括：驱动TFT，其包括具有第一平均晶粒尺寸的晶粒的第一晶体半导体膜; 以及包括具有比第一平均晶粒尺寸小的具有第二平均晶粒尺寸的晶粒的第二晶体半导体膜的开关TFT。通过使用具有高斯光强度分布的激光束照射非晶半导体膜，使得非晶半导体膜的温度在600℃的范围内，同时形成第一晶体半导体膜和第二晶体半导体膜形成第一结晶半导体膜，使得非晶半导体膜的温度由于激光照射产生的潜热而在1100℃至1414℃的温度范围内。

8. 发明申请

US20110297950A1 CRYSTALLINE SEMICONDUCTOR FILM MANUFACTURING METHOD, SUBSTRATE COATED WITH CRYSTALLINE SEMICONDUCTOR FILM, AND THIN-FILM TRANSISTOR 审中-公开
标题翻译：晶体半导体膜制造方法，用晶体半导体膜包覆的衬底和薄膜晶体管
公开(公告)号：US20110297950A1
公开(公告)日：2011-12-08
申请号：US13212465
申请日：2011-08-18
申请人： Tomoya KATO , Tomohiko ODA , Sei OOTAKA
发明人： Tomoya KATO , Tomohiko ODA , Sei OOTAKA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02683 , H01L21/02532 , H01L27/1281 , H01L27/1285
摘要： To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the continuous-wave laser beam having a light intensity distribution continuously convex upward on each of major and minor axes; crystallizing the amorphous semiconductor film at the temperature increased to the range of 600° C. to 1100° C.; and increasing a crystal grain size of the crystallized amorphous semiconductor film, as a result of an increase in an in-plane temperature of the crystallized amorphous film to a range of 1100° C. to 1414° C. by latent heat released in the crystallizing of the amorphous semiconductor film.
摘要翻译：提供一种制造具有良好的面内均匀性的晶体结构的结晶半导体膜的方法。该方法包括：用连续波激光束照射非晶半导体膜以将非晶半导体膜的温度升高到600℃至1100℃的范围，具有光强度分布的连续波激光束每个主轴和短轴上均向上凸起; 在升温到600℃至1100℃的范围内使非晶半导体膜结晶化。并且通过在结晶化中释放的潜热使结晶化非晶膜的面内温度升高到1100℃至1414℃的范围，从而提高结晶化非晶半导体膜的晶粒度。的非晶半导体膜。

9. 发明授权

US08009345B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US08009345B2
公开(公告)日：2011-08-30
申请号：US12962750
申请日：2010-12-08
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

10. 发明授权

US07335910B2 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US07335910B2
公开(公告)日：2008-02-26
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L29/00
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

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