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    • 2. 发明授权
    • Silicon wafer
    • 硅晶片
    • US06599603B1
    • 2003-07-29
    • US09673955
    • 2000-10-24
    • Masahiro KatoMasaro TamatsukaOsamu ImaiAkihiro KimuraTomosuke Yoshida
    • Masahiro KatoMasaro TamatsukaOsamu ImaiAkihiro KimuraTomosuke Yoshida
    • C30B2906
    • C30B29/06C30B15/00H01L21/3225Y10T428/21
    • The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.
    • 本发明提供了一种CZ硅晶片,其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷,以及CZ硅晶片,其中硅晶片包括晶片内的空隙,其最大值 在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率(L1 / L2)为2.5以上,硅晶片包括棒状空隙, /或晶片内的板状空隙缺陷,其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。 据此,可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。
    • 8. 发明授权
    • Method for producing bonded wafer
    • 接合晶片的制造方法
    • US08691665B2
    • 2014-04-08
    • US13514414
    • 2010-11-18
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • H01L21/30H01L21/46H01L21/00
    • H01L21/3247H01L21/302H01L21/3065H01L21/76254
    • The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
    • 本发明涉及一种接合晶片的制造方法,其特征在于,在含有氢或氯化氢的气氛中,对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理, 其中预先在其上放置接合晶片的基座的表面,在平坦化热处理时使用的基座被涂覆有硅膜。 结果,提供了一种接合晶片的制造方法,即使在将粘合晶片的薄膜的表面平坦化的热处理后,也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。